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    FAIRCHILD POWER TRENCH MOSFET FDD Search Results

    FAIRCHILD POWER TRENCH MOSFET FDD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    FAIRCHILD POWER TRENCH MOSFET FDD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10.7A

    Abstract: FDD5353
    Text: FDD5353 tm N-Channel Power Trench MOSFET 60V, 50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = 10V, ID = 10.7A „ 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original     		PDF FDD5353 -PA52 FDD5353 10.7A

    10.7A

    Abstract: No abstract text available
    Text: FDD5353 N-Channel Power Trench MOSFET 60V, 50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = 10V, ID = 10.7A „ 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original     		PDF FDD5353 FDD5353 10.7A

    Untitled

    Abstract: No abstract text available
    Text: FDD5353 tm Trench N-Channel Power MOSFET 60V, 50A, 12.3mΩ Features General Description ̈ Max rDS on = 12.3mΩ at VGS = 10V, ID = 10.7A ̈ 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original     		PDF FDD5353 -PA52 FDD5353

    FDD86

    Abstract: FDD86110
    Text: FDD86110 N-Channel PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDD86110 FDD86110 FDD86

    fairchild 741

    Abstract: FDD86252 FDD86
    Text: FDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDD86252 FDD86252 fairchild 741 FDD86

    FDD86102

    Abstract: FDD86
    Text: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS on , switching performance and ruggedness.


    Original     		PDF FDD86102 FDD86102 FDD86

    Untitled

    Abstract: No abstract text available
    Text: FDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDD86252 FDD86252

    Untitled

    Abstract: No abstract text available
    Text: FDD86252 N-Channel PowerTrench MOSFET 150 V, 27 A, 52 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDD86252

    FDD86110

    Abstract: No abstract text available
    Text: FDD86110 N-Channel PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDD86110 FDD86110

    FDD86110

    Abstract: No abstract text available
    Text: FDD86110 N-Channel PowerTrench MOSFET 100 V, 50 A, 10.2 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDD86110 FDD86110

    fdd86250

    Abstract: FDD86
    Text: FDD86250 N-Channel PowerTrench MOSFET 150 V, 50 A, 22 mΩ Features General Description „ 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDD86250 FDD86250 FDD86

    Untitled

    Abstract: No abstract text available
    Text: FDD86250 N-Channel PowerTrench MOSFET 150 V, 50 A, 22 mΩ Features General Description ̈ 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDD86250

    Untitled

    Abstract: No abstract text available
    Text: FDD3860 tm N-Channel PowerTrench MOSFET 100V, 29A, 36mΩ Features General Description ̈ Max rDS on = 36mΩ at VGS = 10V, ID = 5.9A ̈ 100% UIL tested This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is


    Original     		PDF FDD3860 -PA52 FDD3860

    FDD3860

    Abstract: 125C51
    Text: FDD3860 tm N-Channel PowerTrench MOSFET 100V, 29A, 36mΩ Features General Description „ Max rDS on = 36mΩ at VGS = 10V, ID = 5.9A „ 100% UIL tested This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is


    Original     		PDF FDD3860 -PA52 FDD3860 125C51

    Untitled

    Abstract: No abstract text available
    Text: FDD8453LZ_F085 N-Channel Power Trench MOSFET 40V, 50A, 6.5mΩ Features ̈ Typ rDS on = 5mΩ at VGS = 10V, ID = 15A General Description ̈ Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that


    Original     		PDF FDD8453LZ O-252) FDD845inyPowerâ

    Untitled

    Abstract: No abstract text available
    Text: FDD8453LZ_F085 N-Channel Power Trench MOSFET 40V, 50A, 6.5mΩ Features „ Typ rDS on = 5mΩ at VGS = 10V, ID = 15A General Description „ Typ rDS(on) = 6mΩ at VGS = 4.5V, ID = 13A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that


    Original     		PDF FDD8453LZ O-252)

    fdd86102

    Abstract: No abstract text available
    Text: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 m: Features General Description „ Max rDS on = 24 m: at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		PDF FDD86102 FDD86102

    Untitled

    Abstract: No abstract text available
    Text: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features General Description ̈ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original     		PDF FDD86102

    Untitled

    Abstract: No abstract text available
    Text: FDD86113LZ N-Channel PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description ̈ Max rDS on = 104 mΩ at VGS = 10 V, ID = 4.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		PDF FDD86113LZ

    FDD86326

    Abstract: FDD86
    Text: FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m: Features „ Max rDS on = 23 m: at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 37 m: at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original     		PDF FDD86326 O-252) FDD86326 FDD86

    FDD86

    Abstract: No abstract text available
    Text: FDD86113LZ N-Channel PowerTrench MOSFET 100 V, 5.5 A, 104 mΩ Features General Description „ Max rDS on = 104 mΩ at VGS = 10 V, ID = 4.2 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		PDF FDD86113LZ FDD86113LZ FDD86

    Untitled

    Abstract: No abstract text available
    Text: FDD86326 N-Channel PowerTrench MOSFET 80 V, 37 A, 23 m: Features „ Max rDS on = 23 m: at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 37 m: at VGS = 6 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original     		PDF FDD86326 O-252)

    fdd86102

    Abstract: OC204
    Text: FDD86102 N-Channel PowerTrench MOSFET 100 V, 36 A, 24 mΩ Features „ Max rDS on = 24 mΩ at VGS = 10 V, ID = 8 A General Description „ Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has


    Original     		PDF FDD86102 -PA52 fdd86102 OC204

    sje 2004

    Abstract: sje 204 equivalent diode DA 68a TO-252AD fast reverse recovery time of LED
    Text: FDD1600N10ALZD N-Channel PowerTrench Boost-FET 100V, 6.8A, 160mΩ Features Description • RDS on = 124mΩ ( Typ.)@ VGS = 10V, ID = 3.5A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench process that has been expecially tailored to minimize the on-state resistance and yet


    Original     		PDF FDD1600N10ALZD FDD1600N10ALZD sje 2004 sje 204 equivalent diode DA 68a TO-252AD fast reverse recovery time of LED