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    FAIRCHILD PLANAR TRANSISTORS Search Results

    FAIRCHILD PLANAR TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FAIRCHILD PLANAR TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode sd pd

    Abstract: No abstract text available
    Text: FQD4P25TM_WS / FQU4P25 October 27, 2011 FQD4P25TM_WS / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD4P25TM FQU4P25 -250V, diode sd pd

    FQB2NA90

    Abstract: FQI2NA90
    Text: FQB2NA90 / FQI2NA90 September 2000 QFET TM FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQB2NA90 FQI2NA90 FQI2NA90

    Untitled

    Abstract: No abstract text available
    Text: FQB2NA90 / FQI2NA90 September 2000 QFET TM FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQB2NA90 FQI2NA90 FQB2NA90TM O-263

    Untitled

    Abstract: No abstract text available
    Text: FQB2NA90 / FQI2NA90 September 2000 QFET TM FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQB2NA90 FQI2NA90 FQI2NA90TU O-262 FQI2NA90

    2005Z

    Abstract: IRF840B IRF series 2005 Z IRFS840B
    Text: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF840B/IRFS840B 2005Z IRF840B IRF series 2005 Z IRFS840B

    SSM1N45B

    Abstract: No abstract text available
    Text: SSM1N45B SSM1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF SSM1N45B SSM1N45B

    dc motor forward reverse control

    Abstract: 125 diode IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v N-Channel 40V MOSFET N-Channel MOSFET 200v IRF610B IRFS610B MOSFET 150 N IRF
    Text: IRF610B/IRFS610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF610B/IRFS610B dc motor forward reverse control 125 diode IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v N-Channel 40V MOSFET N-Channel MOSFET 200v IRF610B IRFS610B MOSFET 150 N IRF

    Untitled

    Abstract: No abstract text available
    Text: IRFR420B / IRFU420B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR420B IRFU420B

    Untitled

    Abstract: No abstract text available
    Text: SSR1N60B / SSU1N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF SSR1N60B SSU1N60B

    Untitled

    Abstract: No abstract text available
    Text: IRFW830B / IRFI830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFW830B IRFI830B

    W640B

    Abstract: IRF Power MOSFET code marking
    Text: IRFW640B / IRFI640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFW640B IRFI640B O-263 W640B IRFW640BTM FP001 W640B IRF Power MOSFET code marking

    irf 111

    Abstract: No abstract text available
    Text: IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF624B/IRFS624B O-220 IRF624B FP001 irf 111

    Untitled

    Abstract: No abstract text available
    Text: FQB13N10L / FQI13N10L May 2000 QFET TM FQB13N10L / FQI13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQB13N10L FQI13N10L

    IRFR220BTM

    Abstract: No abstract text available
    Text: IRFR220B / IRFU220B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR220B IRFU220B IRFR220BTM FP001 O-252 IRFR220BTF FP001

    SSS7N60B

    Abstract: Power MOSFET SSP7n60b SSP7N60B
    Text: SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF SSP7N60B/SSS7N60B O-220 O-220F SSS7N60B Power MOSFET SSP7n60b SSP7N60B

    IRFR224A

    Abstract: No abstract text available
    Text: IRFR224B / IRFU224B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR224B IRFU224B IRFR224BTM FP001 O-252 IRFR224BTF FP001 IRFR224A

    irf830b

    Abstract: No abstract text available
    Text: IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF830B/IRFS830B Improved00% IRFS830B IRFS830 IRFS830A IRFS830BT O-220F O-220F irf830b

    Untitled

    Abstract: No abstract text available
    Text: SSR1N60B / SSU1N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF SSR1N60B SSU1N60B SSP1N60A SSR1N60BTM SSR1N60BTF O-252

    Untitled

    Abstract: No abstract text available
    Text: FQD13N10L / FQU13N10L August 2000 QFET TM FQD13N10L / FQU13N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD13N10L FQU13N10L

    Untitled

    Abstract: No abstract text available
    Text: FQD9N08L / FQU9N08L June 2000 QFET TM FQD9N08L / FQU9N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQD9N08L FQU9N08L

    SSR2N60A

    Abstract: No abstract text available
    Text: SSR2N60B / SSU2N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF SSR2N60B SSU2N60B SSR2N60A SSR2N60BTM SSR2N60BTF O-252 SSR2N60A

    Untitled

    Abstract: No abstract text available
    Text: FQB9N08L / FQI9N08L June 2000 QFET TM FQB9N08L / FQI9N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQB9N08L FQI9N08L FQB9N08LTM O-263

    mA759

    Abstract: ua759hc MA759C MA759HC MA77000U1C ua759 A759 UA759 equivalent MA759U1C UA759HM
    Text: juA759 • juA77000 Power Operational Amplifiers FAIRCHILD A Schlumberger Company _U neai_D ivisjon_O gerational_A m plifie^ Description Connection Diagram 8-Lead Metal Package Top View The mA759 and |uA77000 are high performance monolithic operational amplifiers constructed using the Fairchild Planar


    OCR Scan     		PDF MA759 juA77000 ixA759 jiA77000 mA759 /jA77000 jiA741. /uA759 /uA77000 ua759hc MA759C MA759HC MA77000U1C ua759 A759 UA759 equivalent MA759U1C UA759HM

    Untitled

    Abstract: No abstract text available
    Text: MA105QB Voltage Regulator FAIRCHILD A Schlumberger Company MIL-STD-883 November 1985 - Rev 05 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 8-Lead Can Top View The |uA 105QB is a monolithic positive voltage regulator constructed using the Fairchild Planar Epitaxial process.


    OCR Scan     		PDF MIL-STD-883 MA105QB 105QB Regulation910 Voltage11 juA105QB