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    FAIRCHILD DUAL NPN SILICON TRANSISTOR Search Results

    FAIRCHILD DUAL NPN SILICON TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FAIRCHILD DUAL NPN SILICON TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pt 4115 led driver

    Abstract: AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425
    Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage


    Original     		PDF BUT12/12A O-220 BUT12 BUT12A KM4211-PB: KM4211 FAN5231-PB: pt 4115 led driver AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425

    KSC1815YTA

    Abstract: ksc1815
    Text: KSC1815 NPN Epitaxial Silicon Transistor Features • Audio Frequency Amplifier & High Frequency OSC • Complement to KSA1015 • Collector-Base Voltage: VCBO = 50 V 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package


    Original     		PDF KSC1815 KSA1015 KSC1815YTA KSC1815YTA

    Untitled

    Abstract: No abstract text available
    Text: FJB5555 NPN Silicon Transistor Features • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application D2-PAK 1 1.Base 2.Collector Absolute Maximum Ratings* 3.Emitter Ta = 25°C unless otherwise noted


    Original     		PDF FJB5555

    C5026M-O

    Abstract: equivalent transistor for c5026m QS 100 NPN Transistor KSC5026M KSC5026MOS
    Text: KSC5026M NPN Silicon Transistor Features • High Voltage and High Reliability • High Speed Switching • Wide SOA TO-126 1 1. Emitter Absolute Maximum Ratings 2.Collector 3.Base TA = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage 1100


    Original     		PDF KSC5026M O-126 C5026M-O equivalent transistor for c5026m QS 100 NPN Transistor KSC5026M KSC5026MOS

    ksh200 equivalent

    Abstract: ksh200 IPAK
    Text: KSH200 NPN Epitaxial Silicon Transistor Features • • • • D-PAK for Surface Mount Applications High DC Current Gain Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) D-PAK 1 1.Base Absolute Maximum Ratings


    Original     		PDF KSH200 ksh200 equivalent ksh200 IPAK

    Untitled

    Abstract: No abstract text available
    Text: KSH200 NPN Epitaxial Silicon Transistor Features • • • • D-PAK for Surface Mount Applications High DC Current Gain Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) D-PAK 1 1.Base Absolute Maximum Ratings


    Original     		PDF KSH200

    Untitled

    Abstract: No abstract text available
    Text: MJD31/31C NPN Epitaxial Silicon Transistor Features • • • • • General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application No Suffix Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP31 and TIP31C


    Original     		PDF MJD31/31C TIP31 TIP31C MJD31 MJD31C

    Untitled

    Abstract: No abstract text available
    Text: KSC5026M NPN Silicon Transistor Features • High Voltage and High Reliability • High Speed Switching • Wide SOA TO-126 1 1. Emitter Absolute Maximum Ratings 2.Collector 3.Base TA = 25°C unless otherwise noted Value Units Collector-Base Voltage 1100 V


    Original     		PDF KSC5026M O-126

    j13007-1 fairchild

    Abstract: No abstract text available
    Text: MJD31C NPN Epitaxial Silicon Transistor Features Description • • • • • Designed for general-purpose power and switching, such as output or driver stages in applications. General-Purpose Amplifier Low-Speed Switching Applications Lead Formed for Surface Mount Application No Suffix


    Original     		PDF MJD31C TIP31 TIP31C MJD31CTF O-252 MJD31CITU MJD31C-I O-251 j13007-1 fairchild

    Untitled

    Abstract: No abstract text available
    Text: MJD31/31C NPN Epitaxial Silicon Transistor Features • • • • • General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application No Suffix Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP31 and TIP31C


    Original     		PDF MJD31/31C TIP31 TIP31C MJD31 MJD31C

    FJB5555

    Abstract: No abstract text available
    Text: FJB5555 NPN Silicon Transistor Features • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application D2-PAK 1 1.Base 2.Collector Absolute Maximum Ratings* 3.Emitter Ta = 25°C unless otherwise noted


    Original     		PDF FJB5555 FJB5555

    Untitled

    Abstract: No abstract text available
    Text: KSH122 / KSH122I NPN Silicon Darlington Transistor Description Features • • • • • • • Designed for general-purpose power and switching, such D-PAK for Surface Mount Applications as output or driver stages in applications. High DC Current Gain


    Original     		PDF KSH122 KSH122I TIP122 KSH127

    Untitled

    Abstract: No abstract text available
    Text: KSH44H11 / KSH44H11I NPN Epitaxial Silicon Transistor Features Description • • • • • Designed for general-purpose power and switching, such as output or driver stages in applications. Lead Formed for Surface Mount Application No Suffix Straight Lead (I-PAK, “- I” Suffix)


    Original     		PDF KSH44H11 KSH44H11I KSE44H KSH44H11TF KSH44H11 O-252 KSH44H11TM

    Untitled

    Abstract: No abstract text available
    Text: MJD47/50 NPN Epitaxial Silicon Transistor Features • • • • High Voltage and High Reliability D-PAK for Surface Mount Applications Load Formed for Surface Mount Application No Suffix Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP47 and TIP50


    Original     		PDF MJD47/50 TIP47 TIP50 MJD47 MJD50

    Untitled

    Abstract: No abstract text available
    Text: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol


    Original     		PDF FJX2222A 325mW OT-323

    transistor s1p

    Abstract: MARKING S1P S1P transistor FJX2222A ESBC Fairchild dual NPN silicon transistor
    Text: FJX2222A NPN Epitaxial Silicon Transistor Features • General Purpose Transistor • Collector-Emitter Voltage: VCEO = 40V • Collector Dissipation: PC max = 325mW 3 Marking S1P 2 1 SOT-323 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol


    Original     		PDF FJX2222A 325mW OT-323 transistor s1p MARKING S1P S1P transistor FJX2222A ESBC Fairchild dual NPN silicon transistor

    tip31c fairchild

    Abstract: MJD31 MJD31C TIP31 TIP31C IPAK transistor 31C
    Text: MJD31/31C NPN Epitaxial Silicon Transistor Features • • • • • General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application No Suffix Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP31 and TIP31C


    Original     		PDF MJD31/31C TIP31 TIP31C MJD31 tip31c fairchild MJD31 MJD31C TIP31C IPAK transistor 31C

    Untitled

    Abstract: No abstract text available
    Text: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application


    Original     		PDF KSC5603D O-220

    150a gto

    Abstract: QS 100 NPN Transistor 200H KSC5603D
    Text: KSC5603D NPN Silicon Transistor, Planar Silicon Transistor Features • • • • • Equivalent Circuit C High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling Diode Suitable for Electronic Ballast Application


    Original     		PDF KSC5603D O-220 150a gto QS 100 NPN Transistor 200H KSC5603D

    J5555

    Abstract: FJD5555 FJD5555TM US Global Sat
    Text: FJD5555 NPN Silicon Transistor Features • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application DPAK 1 Marking : J5555 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*


    Original     		PDF FJD5555 J5555 J5555 FJD5555 FJD5555TM US Global Sat

    Untitled

    Abstract: No abstract text available
    Text: BU406 NPN Epitaxial Silicon Transistor Features Description • High-Voltage Capability The BU406 is a 400 V 7 A Silicon Epitaxial Planar NPN Transistor. The BU406 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in


    Original     		PDF BU406 BU406 O-220 O-220 BU406TU

    Untitled

    Abstract: No abstract text available
    Text: 2N6517 NPN Epitaxial Silicon Transistor Features • • • • • High Voltage Transistor Collector-Emitter Voltage: VCEO = 350V Collector Dissipation: PC max = 625mW Complement to 2N6520 Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)


    Original     		PDF 2N6517 625mW 2N6520

    KSP44

    Abstract: Ksp44 data transistor KSP44 Fairchild Semiconductor
    Text: KSP44/45 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor • Collector-Emitter Voltage: VCEO = KSP44: 400V KSP45: 350V • Collector Power Dissipation: PC max = 625mW 1 TO-92 1. Emitter 2. Base 3. Collector Ordering Information Part Number


    Original     		PDF KSP44/45 KSP44: KSP45: 625mW KSP44BU KSP44TA KSP44TF KSP45TA KSP44 Ksp44 data transistor KSP44 Fairchild Semiconductor

    Untitled

    Abstract: No abstract text available
    Text: FJD5555 NPN Silicon Transistor Features • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application DPAK 1 Marking : J5555 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings*


    Original     		PDF FJD5555 J5555