MOC8100M
Abstract: No abstract text available
Text: TIL111M, TIL117M, MOC8100M General Purpose 6-Pin Phototransistor Optocouplers Features General Description • UL Recognized File # E90700 The MOC8100M, TIL111M, and TIL117M optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line
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TIL111M,
TIL117M,
MOC8100M
E90700)
MOC8100M,
TIL117M
TIL111VM)
MOC8100M
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IRFP140
Abstract: TA17421 TB334
Text: NS ESIG D W R NE UCT D FO E PROD E D N T MME BSTITU U ECOSheet N S R Data 4 E T NO FP1 SIBL R I S O P Title FP1 bt A, 0V, 77 m, wer OST utho eyrds A, 0V, 77 m, June 2000 31A, 100V, 0.077 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field
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IRFP14
IRFP140
TA17421.
IRFP140
TA17421
TB334
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IRF640 applications note
Abstract: irf640 RF1S640SM9A TA17422 power MOSFET IRF640 RF1S640 RF1S640SM TB334
Text: IRF640, RF1S640SM Data Sheet Title F64 1S6 SM bt A, 0V, 80 m, 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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IRF640,
RF1S640SM
TA17422.
TB334
IRF640
RF1S640SM
IRF640 applications note
irf640
RF1S640SM9A
TA17422
power MOSFET IRF640
RF1S640
TB334
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IRFP240 transistor
Abstract: No abstract text available
Text: IRFP240 Data Sheet Title FP2 bt A, 0V, 80 m, 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP240
IRFP240 transistor
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IRFP240
Abstract: irfp240 transistor TA17422 TB334
Text: IRFP240 Data Sheet January 2002 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of
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IRFP240
TA17422.
O-247
200opment.
IRFP240
irfp240 transistor
TA17422
TB334
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IRFP140
Abstract: Relays 12v 31A TA17421 TB334
Text: IGNS DES W E T OR N DUC ED F TE PRO D N MME BSTITU ECOSheet SU R 0N Data January 2002 T NO IBLE IRFP14 S S PO 31A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFP14
TA17421.
IRFP140
Relays 12v 31A
TA17421
TB334
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25E 106
Abstract: H11D1M
Text: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high
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4N38M,
H11D1M,
H11D2M,
H11D3M,
MOC8204M
H11DXM
MOC8204M
MOC8204M,
25E 106
H11D1M
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IEC60747-5-2
Abstract: MOC8111M MOC8111SM MOC8111SR2M MOC8111TM MOC8112M MOC8113M
Text: MOC8111M, MOC8112M, MOC8113M 6-Pin DIP Optocoupler for Power Supply Applications No Base Connection Features Description • High isolation voltage The MOC811XM series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. The base of the transistor is not bonded to an external pin for
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MOC8111M,
MOC8112M,
MOC8113M
MOC811XM
MOC8111M:
MOC8112M:
MOC8113M:
E90700,
IEC60747-5-2
MOC8111M
MOC8111SM
MOC8111SR2M
MOC8111TM
MOC8112M
MOC8113M
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H11D1M
Abstract: MOC8204M 4N38M H11D1 H11D2M H11D3M
Text: 4N38M, H11D1M, H11D2M, H11D3M, MOC8204M High Voltage Phototransistor Optocouplers Features General Description • High voltage: The 4N38M, H11DXM and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high
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4N38M,
H11D1M,
H11D2M,
H11D3M,
MOC8204M
H11DXM
MOC8204M
MOC8204M,
H11D1M
4N38M
H11D1
H11D2M
H11D3M
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H11AV1M
Abstract: No abstract text available
Text: H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Phototransistor Optocouplers Features Description • H11AV1M and H11AV2M feature 0.3" input-output The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line white package.
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H11AV1M,
H11AV1AM,
H11AV2M,
H11AV2AM
H11AV1M
H11AV2M
H11AV1AM
H11AV2AM
E90700,
H11AV1AVM)
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linear applications of power MOSFET IRF640
Abstract: power MOSFET IRF640 IRF640 applications note for irf640 irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640 RF1S640SM
Text: IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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IRF640,
RF1S640,
RF1S640SM
TA17422.
linear applications of power MOSFET IRF640
power MOSFET IRF640
IRF640 applications note
for irf640
irf640
IRF640 application note
IRF640 field-effect power transistor
RF1S640SM9A
RF1S640
RF1S640SM
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H11AXM
Abstract: 4N35M H11Ax 4N25M 4N26M 4N27M 4N28M 4N36M 4N37M H11A1M
Text: 4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M, H11A1M, H11A2M, H11A3M, H11A4M, H11A5M General Purpose 6-Pin Phototransistor Optocouplers Features Description • UL recognized File # E90700, Volume 2 The general purpose optocouplers consist of a gallium
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4N25M,
4N26M,
4N27M,
4N28M,
4N35M,
4N36M,
4N37M,
H11A1M,
H11A2M,
H11A3M,
H11AXM
4N35M
H11Ax
4N25M
4N26M
4N27M
4N28M
4N36M
4N37M
H11A1M
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H11AV1M
Abstract: H11AV1AM H11AV1AVM H11AV1SM H11AV1SR2M H11AV2AM H11AV2M H11AV2SM
Text: H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Phototransistor Optocouplers Features Description • H11AV1M and H11AV2M feature 0.3" input-output The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line white package.
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H11AV1M,
H11AV1AM,
H11AV2M,
H11AV2AM
H11AV1M
H11AV2M
H11AV1AM
H11AV2AM
E90700,
H11AV1AVM)
H11AV1AVM
H11AV1SM
H11AV1SR2M
H11AV2SM
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TIL111M
Abstract: MOC8100M TIL111VM TIL117M TIL111SM TIL111SR2M TIL111SVM TIL111TM TIL111TVM
Text: TIL111M, TIL117M, MOC8100M General Purpose 6-Pin Phototransistor Optocouplers Features General Description • UL recognized File # E90700 The MOC8100M, TIL111M and TIL117M optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line
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TIL111M,
TIL117M,
MOC8100M
E90700)
MOC8100M,
TIL111M
TIL117M
TIL111VM)
MOC8100M
TIL111VM
TIL111SM
TIL111SR2M
TIL111SVM
TIL111TM
TIL111TVM
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CNY173M
Abstract: No abstract text available
Text: CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M, MOC8107M Phototransistor Optocouplers Features Description • UL recognized File # E90700, Vol. 2 The CNY17XM, CNY17FXM and MOC810XM devices consist of a Gallium Arsenide IRED coupled with an NPN
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CNY171M,
CNY172M,
CNY173M,
CNY174M,
CNY17F1M,
CNY17F2M,
CNY17F3M,
CNY17F4M,
MOC8106M,
MOC8107M
CNY173M
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MCT2EM
Abstract: No abstract text available
Text: MCT2M, MCT2EM, MCT210M, MCT271M Phototransistor Optocouplers Features Description • UL recognized File # E90700, Vol. 2 The MCT2XXM series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
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MCT210M,
MCT271M
E90700,
IEC60747-5-2
MCT271M
MCT2EM
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optocoupler mct2e
Abstract: IEC60747-5-2 MCT210M MCT271M ultra low voltage detector
Text: MCT2M, MCT2EM, MCT210M, MCT271M Phototransistor Optocouplers Features Description • UL recognized File # E90700, Vol. 2 The MCT2XXM series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
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MCT210M,
MCT271M
E90700,
IEC60747-5-2
MCT271M
optocoupler mct2e
MCT210M
ultra low voltage detector
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MOC8100M
Abstract: No abstract text available
Text: TIL111M, TIL117M, MOC8100M General Purpose 6-Pin Phototransistor Optocouplers Features General Description • UL recognized File # E90700 The MOC8100M, TIL111M and TIL117M optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line
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TIL111M,
TIL117M,
MOC8100M
E90700)
MOC8100M,
TIL111M
TIL117M
TIL111VM)
MOC8100M
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6Pin LED Driver
Abstract: ft 107 triac MOC3052M
Text: MOC3051M, MOC3052M 6-Pin DIP Random-Phase Optoisolators Triac Drivers 600 Volt Peak Features Description • Excellent IFT Stability—IR Emitting Diode Has Low The MOC3051M and MOC3052M consist of a GaAs infrared emitting diode optically coupled to a non-zerocrossing silicon bilateral AC switch (triac). These devices
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MOC3051M,
MOC3052M
MOC3051M
MOC3052M
UL1577,
EN/IEC60747-5-2
6Pin LED Driver
ft 107 triac
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BC107BP
Abstract: TRANSISTOR BC107BP Rudy Severns TRANSISTOR DATASHEET BC107BP Severns uA555 TRANSISTOR DATASHEET BC107B Datasheet for BC107B BJT "Safe Operating Area and Thermal Design" silicon LM10CN
Text: MEETING TRANSIENT SPECIFICATIONS FOR ELECTRICAL SYSTEMS IN MILITARY VEHICLES By Arthur Jordan Sr. Applications Engineer, Vicor Electrical systems in military vehicles are normally required to meet stringent transient requirements. Typical of these specifications are MIL-STD-1275B in the U.S.A. and DEF-STAN
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MIL-STD-1275B
MIL-STD-461E
ED-31
BC107BP
TRANSISTOR BC107BP
Rudy Severns
TRANSISTOR DATASHEET BC107BP
Severns
uA555
TRANSISTOR DATASHEET BC107B
Datasheet for BC107B BJT
"Safe Operating Area and Thermal Design" silicon
LM10CN
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Untitled
Abstract: No abstract text available
Text: MOC3051M, MOC3052M 6-Pin DIP Random-Phase Optoisolators Triac Drivers 600 Volt Peak Features Description • Excellent IFT Stability—IR Emitting Diode Has Low The MOC3051M and MOC3052M consist of a GaAs infrared emitting diode optically coupled to a non-zerocrossing silicon bilateral AC switch (triac). These devices
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MOC3051M,
MOC3052M
MOC3051M
MOC3052M
UL1577,
EN/IEC60747-5-2
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current buffer ic 20ma 150ma
Abstract: MAX8710 MAX8710ETG MAX8711 MAX8711ETE MAX8712 MAX8712ETC
Text: 19-3174; Rev 0; 1/04 KIT ATION EVALU E L B AVAILA Low-Cost Linear-Regulator LCD Panel Power Supplies The MAX8710/MAX8711/MAX8712 offer complete linear-regulator power-supply solutions for thin-film transistor TFT liquid-crystal-display (LCD) panels used in
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MAX8710/MAX8711/MAX8712
MAX8710
MAX8711
MAX8710/MAX8711/MAX8712
current buffer ic 20ma 150ma
MAX8710ETG
MAX8711ETE
MAX8712
MAX8712ETC
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current buffer ic 20ma 150ma
Abstract: MAX8710 MAX8711 MAX8712 MAX8761
Text: 19-3174; Rev 1; 10/05 KIT ATION EVALU LE B A IL A AV Low-Cost, Linear-Regulator LCD Panel Power Supplies The MAX8710/MAX8711/MAX8712/MAX8761 offer complete linear-regulator power-supply solutions for thin-film transistor TFT liquid-crystal-display (LCD) panels used
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MAX8710/MAX8711/MAX8712/MAX8761
MAX8710/MAX8711/MAX8761
MAX8710/
MAX8761
MAX8710/MAX8711/MAX8712/MAX8761
current buffer ic 20ma 150ma
MAX8710
MAX8711
MAX8712
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fault finding all type of lcd tv file
Abstract: pass transistor 2545 power n-channel mosfet
Text: 19-3174; Rev 1; 10/05 KIT ATION EVALU LE B A IL A AV Low-Cost, Linear-Regulator LCD Panel Power Supplies The MAX8710/MAX8711/MAX8712/MAX8761 offer complete linear-regulator power-supply solutions for thin-film transistor TFT liquid-crystal-display (LCD) panels used
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MAX8710/MAX8711/MAX8761)
150mA
12MHz,
MAX8710/MAX8761)
MAX8710/MAX8711/MAX8712/MAX8761
MAX8710/MAX8711/MAX871Naming
21-0139E
T1644-4*
fault finding all type of lcd tv file
pass transistor
2545 power n-channel mosfet
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