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    FAH DIODE 28 Search Results

    FAH DIODE 28 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    FAH DIODE 28 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    silicon diode ideality factor

    Abstract: 9938 DN Computer spike guard circuit diagram EMC1023 EMC1023-1-ACZL-TR EMC1023-2-ACZL-TR EMC1023-3-ACZL-TR EMC1023-4-ACZL-TR XX10 pin configuration NPN transistor 2n3906
    Text: EMC1023 1°C Triple Temperature Sensor with Resistance Error Correction Datasheet General Description Features The EMC1023 is a System Management Bus SMBus temperature sensor that is capable of monitoring three temperature zones. Four unique part numbers can be


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    PDF EMC1023 EMC1023 2200pF 11-bit silicon diode ideality factor 9938 DN Computer spike guard circuit diagram EMC1023-1-ACZL-TR EMC1023-2-ACZL-TR EMC1023-3-ACZL-TR EMC1023-4-ACZL-TR XX10 pin configuration NPN transistor 2n3906

    1001101B

    Abstract: EMC1023 EMC1023-1-ACZB-TR EMC1023-1-ACZL-TR EMC1023-2-ACZB-TR EMC1023-2-ACZL-TR EMC1023-3-ACZB-TR EMC1023-3-ACZL-TR EMC1023-4-ACZB-TR EMC1023-4-ACZL-TR
    Text: EMC1023 1°C Triple Temperature Sensor with Resistance Error Correction Datasheet General Description Features The EMC1023 is a System Management Bus SMBus temperature sensor that is capable of monitoring three temperature zones. Four unique part numbers can be


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    PDF EMC1023 EMC1023 11-bit 1001101B EMC1023-1-ACZB-TR EMC1023-1-ACZL-TR EMC1023-2-ACZB-TR EMC1023-2-ACZL-TR EMC1023-3-ACZB-TR EMC1023-3-ACZL-TR EMC1023-4-ACZB-TR EMC1023-4-ACZL-TR

    F75383

    Abstract: F75393 2n3906 beta 2n3906 equivalent F75384 F75393 S 2N3906 thermal transistor BY395 pnp 2N3906 beta
    Text: F75393 ±1oC Temperature Sensor with ß Compensation Release Date: May, 2008 Revision: V0.16P F75393 F75393 Datasheet Revision History Version Date Page Revision History V0.10P 2007/7/23 - Preliminary Version V0.11P 2007/9/20 - Add register description V0.12P


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    PDF F75393 F75393 F75394 2N3906) 2N3906 2200pF F75383 2n3906 beta 2n3906 equivalent F75384 F75393 S 2N3906 thermal transistor BY395 pnp 2N3906 beta

    Computer spike guard circuit diagram

    Abstract: silicon diode ideality factor DIODE FAH 45
    Text: EMC1023 1°C Triple Temperature Sensor with Resistance Error Correction Datasheet General Description Features The EMC1023 is a System Management Bus SMBus temperature sensor that is capable of monitoring three temperature zones. Four unique part numbers can be


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    PDF EMC1023 11-bit EMC1023 Computer spike guard circuit diagram silicon diode ideality factor DIODE FAH 45

    Computer spike guard circuit diagram

    Abstract: silicon diode ideality factor EMC1023 EMC1023-1-ACZB-TR EMC1023-1-ACZL-TR EMC1023-2-ACZB-TR EMC1023-2-ACZL-TR EMC1023-3-ACZB-TR EMC1023-3-ACZL-TR EMC1023-4-ACZB-TR
    Text: EMC1023 1°C Triple Temperature Sensor with Resistance Error Correction Datasheet General Description Features The EMC1023 is a System Management Bus SMBus temperature sensor that is capable of monitoring three temperature zones. Four unique part numbers can be


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    PDF EMC1023 EMC1023 11-bit Computer spike guard circuit diagram silicon diode ideality factor EMC1023-1-ACZB-TR EMC1023-1-ACZL-TR EMC1023-2-ACZB-TR EMC1023-2-ACZL-TR EMC1023-3-ACZB-TR EMC1023-3-ACZL-TR EMC1023-4-ACZB-TR

    4312 Fan

    Abstract: pin diagram of 7447 22342 capacitor amd 2587 2N3904 EMC2102 EMC2102-DZK transistor 8331 FAN23
    Text: EMC2102 RPM-Based Fan Controller with HW Thermal Shutdown PRODUCT FEATURES Datasheet General Description Features The EMC2102 is an SMBus, closed-loop, RPM-based fan controller/driver with hardware HW thermal shutdown and reset controller. The EMC2102 is


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    PDF EMC2102 EMC2102 28pin 4312 Fan pin diagram of 7447 22342 capacitor amd 2587 2N3904 EMC2102-DZK transistor 8331 FAN23

    amd 2587

    Abstract: ca608 Transistor BC 1078 22342 capacitor EMC2102-DZK 186 diod TRANSISTOR BC 187 2N3904 EMC2102 transistor bc 187 pin details
    Text: EMC2102 RPM-Based Fan Controller with HW Thermal Shutdown PRODUCT FEATURES Datasheet GENERAL DESCRIPTION The EMC2102 is an SMBus, closed-loop, RPM-based fan controller/driver with hardware HW thermal shutdown and reset controller. The EMC2102 is packaged in a thermally enhanced, compact, 5x5, 28pin lead-free RoHS compliant QFN package.


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    PDF EMC2102 EMC2102 28pin amd 2587 ca608 Transistor BC 1078 22342 capacitor EMC2102-DZK 186 diod TRANSISTOR BC 187 2N3904 transistor bc 187 pin details

    64-th

    Abstract: No abstract text available
    Text: CYRF69103 Programmable Radio on Chip Low Power Programmable Radio on Chip Low Power PRoC LP Features • Single Device, Two Functions ❐ 8-bit Flash based MCU function and 2.4 GHz radio transceiver function in a single device. ■ Flash Based Microcontroller Function


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    PDF CYRF69103 16-bit 12-bit 64-th

    CYRF69103-40LFXC

    Abstract: FAH 32 CYRF6910 Z226 0X00 CRC16 CRC-16 CYRF69103 CYWUSB6934 WirelessUSB
    Text: CYRF69103 Programmable Radio on Chip Low Power PRoC LP Features ❐ Programmable output power up to +4 dBm Auto Transaction Sequencer ATS ❐ Framing CRC and Auto ACK ❐ Received Signal Strength Indication (RSSI) ❐ Automatic Gain Control (AGC) ❐


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    PDF CYRF69103 16-bit 12-bit CYRF69103-40LFXC FAH 32 CYRF6910 Z226 0X00 CRC16 CRC-16 CYRF69103 CYWUSB6934 WirelessUSB

    Untitled

    Abstract: No abstract text available
    Text: CYRF69103 Programmable Radio on Chip Low Power Programmable Radio on Chip Low Power PRoC LP Features • Single Device, Two Functions ❐ 8-bit Flash based MCU function and 2.4 GHz radio transceiver function in a single device. ■ Flash Based Microcontroller Function


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    PDF CYRF69103 16-bit 12-bit

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode.


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    PDF NDL7001 NDL7001 b4S752S b427525 b427525

    FAH DIODE

    Abstract: FAH diode 28
    Text: 3GE D N EC J • b427525 ‘0051240 1 ■ ELECTRONICS INC T^-O? LASER DIODE N D L5 0 0 9 1 3 1 0 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTIO N N D L5009 is a long wavelength laser diode especially designed for longdistance high capacity transmission systems. The


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    PDF b427525 L5009 1310nm L5009 h427S2S 00ET24E FAH DIODE FAH diode 28

    ADB13

    Abstract: No abstract text available
    Text: DATA SHEET LASER DIODE NDL7001 1310 nm FIBER OPTIC COMMUNICATIONS InGaAsP M OW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1310 nm laser diode for fiber optic com m unications and have a M u ltip le Quantum W e ll M Q W structure and built-in InGaAs m onitor photo diode.


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    PDF NDL7001 NDL7001 LC-2298) ADB13

    Irfp450

    Abstract: No abstract text available
    Text: [ ' - 7964142 SAM SUN G S EM IC O N D UCTOR INC D eT | 7 ^ 4 1 4 2 9 8D 0 5 2 2 4 □□□5524 3 | D T ~ 3 i -1 3 N-CHANNEL POWER MOSFETS IRFP450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability


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    PDF IRFP450/451/452/453 IRFP250 IRFP251 IRFP252 IRFP253 IRFP450 IRFP451 OOGS43S Irfp450

    diode t25 4 F0

    Abstract: DIODE T25 4 ko
    Text: _ QPTEK Product Bulletin OPB930L July 1996 Photologic Slotted Optical Switches Types OPB930L, QPB940L Series if:; 1 '• Features • 0.320“ 8.13 mm lead space for PC board mount • Choice of aperture • Choice of output configuration • Choice of opaque or IR transmissive


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    PDF OPB930L OPB930L, QPB940L OPB93 OPB94 /OPB940W diode t25 4 F0 DIODE T25 4 ko

    NDL5003D

    Abstract: NDL5003D1 NDL5100 Nitrogen
    Text: 3GE D • b.42?52S QDETSEb 4 ■ N E c'elECTRONICS INC T-H -07 LASER DIODE _J N D L5003D 1 1 300 nm O PTICAL FIB ER COM M UNICATIONS InGaAsP DC-PBH LA SER DIODE DESCRIPTIO N NDL5003D1 is a 1300 nm laser diode especially designed for long distance high capacity transmission systems. H ie DC-PBH


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    PDF NDL5003D1 NDL8003D1 NDL5003D1, NDL5003D. NDL5003D NDL5003D1 NDL5100 Nitrogen

    2N7237

    Abstract: ely transformers IRFM9240 JANTXV2N7237 IRFM9S40
    Text: Data Sheet No. PD-9.497D INTERNATIONAL RECTIFIER l l O R l REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRPM9B4Q SN7S37 JANS2N7237 JANTX2N7237 JANTXV2N7237 [REF: MIL-S-1S500/5S5] -200 Volt, 0.51 Ohm HEXFET Product Summary The HEXFET® technology is the key to International


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    PDF IRFM9S40 JANTXV2N7237 MIL-S-19500/595] 2N7237 IRFM9240D IRFM9240U O-254 MIL-S-19500 GG1T451 I-388 ely transformers IRFM9240 JANTXV2N7237 IRFM9S40

    DT1X

    Abstract: No abstract text available
    Text: OMS410 OMS410A 0MS51Q 3 PHASE, LOW VOLTAGE, LOW RDS on , MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE T h r e e P ha s e . 100 Volt, 15 To 45 A m p B r i d g e With C u rre n t A n d T e m p e ra tu re S ensin g In A L o w P r o f i l e P a c k a g e FEATURES


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    PDF OMS410 OMS410A 0MS51Q DT1X

    27C011

    Abstract: 27C128 INTEL 27C010 27C128 27C210 27C513 27C64 27128B 7258 "drop-in replacement"
    Text: 27C011 PAGE-ADDRESSED1M 8 x 16K x 8 EPROM • Paged Organization — Reduced Physical Address Requirement ■ Compatible with 28-Pin JEDEC EPROMs -Single-Trace Modification for Retrofitting 27128-Based Designs ■ No-Hardware-Change Upgrades — Drop-In 27513 Replacement


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    PDF 27C011 28-Pin 27128-Based 27C011 27C128 INTEL 27C010 27C128 27C210 27C513 27C64 27128B 7258 "drop-in replacement"

    MM74HCT241

    Abstract: MM54HCT244J M74HCT24
    Text: National MM54HCT240/MM74HCT240 Inverting Octal TRI-STATE Buffer MM54HCT241/MM74HCT241 Octal TRI-STATE Buffer MM54HCT244/MM74HCT244 Octal TRI-STATE Buffer General Description These TRI-STATE buffers utilize microCMOS Technology, 3.0 micron silicon gate N-weW CMOS, and are general pur­


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    PDF MM54HCT240/MM74HCT240 MM54HCT241/MM74HCT241 MM54HCT244/MM74HCT244 MM54HCT/MM74HCT 150pF 74HCT 54HCT TA----55 54HCT241/MM74HCT241/MM54HCT244/MM74HCT244 MM74HCT241 MM54HCT244J M74HCT24

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors P roduct specification Quad buffer/line driver with 5-volt tolerant inputs/outputs 3-state 74LVC125A FEATURES DESCRIPTION • 5-volt tolerant inputs/outputs, for interfacing with 5-volt logic The 74LVC125A is a high performance, low-power, low-voltage


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    PDF 74LVC125A 74LVC125A SW00Q47

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.889 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM915Q P-CHANNEL RAD HARD Product Summary -100 Volt, 0.12012, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and


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    PDF IRHM915Q 1x105 1x105 1x1012 MIL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: FU JIT SU PROGRAMMABLE SCHOTTKY 32768-B IT READ ONLY MEMORY SCHOTTKY 32768-BIT DEAP PROM 4096 WORDS x 8 BITS M B7142E/H N ovem ber 1988 Edition 4 .0 The Fujitsu MB7142 Is high spee d s c h o ttk y T T L e lectrica lly field p rogram m ab le read only m e m o ry organized as 4096 w o rds by 8 bits. W ith th re e s ta te o u tp u ts , m em o ry


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    PDF 32768-B 32768-BIT B7142E/H MB7142 MB7142E/H 24-pin 24-LEAD FPT-24C-A01) 28-pad

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 127107 rev. A 09/97 International Iö R Rectifier T.HFL SERIES T-Modules FAST RECOVERY DIODES Features • 40 A 70 A 85 A Fast recovery tim e characteristics ■ Electrically isolated base plate ■ 3 5 0 0 VRMS isolating voltage ■ Standard J E D E C package


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    PDF 003G030