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    f4316

    Abstract: F4319F MGF4319F
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series ! S U P E R LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0F series super-low -noise HEMT High Electron M o b ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic


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    PDF F4310F F4316F F4319F f4316 F4319F MGF4319F