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    F422 TRANSISTOR Search Results

    F422 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    F422 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    F422

    Abstract: F423 F421 F-423 ir f422 UFNF422
    Text: UNITRODE CORP 9347963 TS UNITRODE CORP DE 1 ^ 3 4 7 ^ 3 92D 10875 UFNF420 UFNF421 UFNF422 UFNF423 POWER MOSFET TRANSISTORS 500 Volt, 3.0 Ohm FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability


    OCR Scan     		D01Gfl75 UFNF420 UFNF421 UFNF422 UFNF423 UFNF423 F422 F423 F421 F-423 ir f422 PDF

    tr f422

    Abstract: F422 F423 UFNF422 ufnf420 F421
    Text: POWER MOSFET TRANSISTORS [J ™? 500 Volt, 3.0 Ohm UFNF422 UFNF423 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rdsioih and a high transconductance. FEATURES • Fast Switching


    OCR Scan     		UFNF422 UFNF423 UFNF420 UFNF421 tr f422 F422 F423 F421 PDF

    f422

    Abstract: No abstract text available
    Text: BF420 BF422 SILICON EPITAXIAL TRANSISTORS N-P-N tra n s is to rs in p la s tic T O -9 2 p a c k a g e p r im a r ily in te n d e d f o r class-B v id e o o u tp u t stages in c o lo u r te le v is io n and p ro fe s s io n a l m o n ito r e q u ip m e n t. P-N-P c o m p le m e n ts are B F 4 2 1 and B F 4 2 3 .


    OCR Scan     		BF420 BF422 f422 PDF

    MRF485

    Abstract: MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464 MRF475
    Text: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de­ signed for operation in RF Power Amplifiers. These transistors


    OCR Scan     		Distorti1-11 MRF421 MRF475 O-22GAB MRF412 IMRF410 MRF485 MRF401 45A-09 MRF426 MRF477 Motorola transistors MRF475 Motorola transistors MRF485 MRF466 MRF476 Motorola transistors MRF477 UHF-800 mrf464 PDF

    IRF423

    Abstract: ir*420 SM 3117 circuit diagram IRF420 IRF421 IRF422
    Text: Standard Power MOSFETs IRF420, IRF421, IRF422, IRF423 File N u m b e r 1571 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 2.0A and 2.5A, 450V-500V rDs on = 3.0 O and 4.0 fi Features:


    OCR Scan     		IRF420, IRF421, IRF422, IRF423 50V-500V IRF422 IRF423 IF422 ir*420 SM 3117 circuit diagram IRF420 IRF421 PDF

    MRF485

    Abstract: mrf477 MRF475 MRF476 Motorola transistors MRF476 Motorola transistors MRF475 Motorola transistors MRF455 MRF466 MRF455 MRF460
    Text: "W . CASE 211-07 CASE 211-09 .380" Flange] CASE 145A-09 (.380' Stud CASE 145A-10 (.500'’ Stud) CASE 211-11 (.500'' Flange; BIPOLAR TRANSISTORS Motorola’s broad line of bipolar RF Power Transistors are de­ signed for operation in RF Power Amplifiers. These transistors


    OCR Scan     		MRF476 T0-220AB MRF453 MRF455/A MRF454 MRF475 MRF449 MRF450/A MRF497 O-220AB MRF485 mrf477 Motorola transistors MRF476 Motorola transistors MRF475 Motorola transistors MRF455 MRF466 MRF455 MRF460 PDF

    SOT 86 MARKING 03

    Abstract: transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S
    Text: I TELEFUNKEN ELECTRONIC 1 ?E D m ß^GDTb DDG^MOB 1 BF 420 S • BF 422 S TIILKPtM iN ] electronic Crtaliv« Ttchootoo« r - Silicon NPN Epitaxial Planar RF Transistors 3 / - * 3 Applications: Video B-class power stages in TV-receivers .Features; • B F4 2 0 S complementary to BF 421 S


    OCR Scan     		BF420S T0126 15A3DIN SOT 86 MARKING 03 transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S PDF

    MRF245

    Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
    Text: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1


    OCR Scan     		CB-403) CB-410) CB-303) CB-4111 CB-306) CB-407) 1CB-404) CB-408) CB-409) 52N6082 MRF245 PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94 PDF

    mrf245

    Abstract: SD1416 PT9788 PT8710 2N5642 BLY94 PT8811 BLX66 PT8740 2N4072
    Text: 88. 108 MHz class C for FM tansmitters émetteurs/réémetteurs FM, classe C TYPE SD 1457 SD 1460 PACKAGE CONFIG. Vcc CE CE 28 28 . 500 4LFL . 500 4LFL Pout W (V) > THOMSON-CSF fo (MHz) Pin (W) Gp (dB) (% ) 108 108 7,5 20 > 10 9 75 75 75 160 r!c .380 4L FL


    OCR Scan     		SD2N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N3553 mrf245 PT9788 PT8710 2N5642 BLY94 PT8811 BLX66 PT8740 2N4072 PDF

    2N918

    Abstract: SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544
    Text: 130. 175 MHz class C for FM mobile applications p\ communications mobiles FM, classe C TYPE PACKAGE CONFIG. V cc V .280 4LSL (B) XO-72 SL TO-117 SL .280 4LSL (B) .280 4LSL (B) CE CE CE CE CE 7,5 7,5 7,5 7,5 7,5 2N 4427 SD 1484-10 SD 1127 2N 6080 SD 1574


    OCR Scan     		BAM20 22N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N918 SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544 PDF

    BFY70

    Abstract: PT8828 CM45-12A THB598 PT8811 BLY22 sd1451 MRF245 PT8710 PT9780
    Text: wideband VHF - UHF class C for E C M and radio links applications applications large bande VHF-UHF, classe C, contre mesure et faisceaux hertziens PACKAGE TYPE C O NFIG. Pout Frequency Pin range W (W) (M Hz) Vcc (V) 1H0MS0N-CSF GP min (dB) m in (% ) m ax


    OCR Scan     		2N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N3553 BFY70 PT8828 CM45-12A THB598 PT8811 BLY22 sd1451 MRF245 PT8710 PT9780 PDF

    f422

    Abstract: transistor f422 F981 IC F421 4-bit even parity using mux 8-1 transistor f421 transistor f423 4-bit odd parity using mux 8-1 F423 PD65003
    Text: NEC NEC Electronics Inc. /¿ P D 6 5 0 0 0 C M O S -2 SER IES 3-M IC R O N CM OS G A T E A R R A Y S April 1985 D e sc rip tio n The/iPD65000 (CMOS-2) series of gate arrays are lowpower, high-speed devices featuring 3-mlcron silicon gate CMOS technology. The basic cell on the chip


    OCR Scan     		uPD65000 //PD65003 juPD65002 fiPD65010 juPD65020 16-Pin 18-Pin 20-Pin 24-Pin 28-Pin f422 transistor f422 F981 IC F421 4-bit even parity using mux 8-1 transistor f421 transistor f423 4-bit odd parity using mux 8-1 F423 PD65003 PDF

    F422

    Abstract: transistor f422 PD65010 F922 F962 F715 F981 IC pd65000 F746 F744
    Text: N E C ELECTRONICS INC 72 NEC N E C Electronics Inc. DE I b427525 000Ö275 □ | T-4 2-1 1 -0 9 //PD65000 CMOS-2 S E R IE S 3-MICRON CMOS GATE A R R A YS c April 1985 Description Figure 1. C M O S Gate Array Chip Layout Figure 2. Cell Configured as a Two-Input


    OCR Scan     		b427525 uPD65000 The//PD65000 T-42-11-09 //PD65000 //PD65003 juPD65002 fiPD65010 juPD65020 F422 transistor f422 PD65010 F922 F962 F715 F981 IC pd65000 F746 F744 PDF

    upd6500

    Abstract: F922 uPD65007 F981 IC tr f422 F661 CMOS GATE- NEC f422 f962 f791
    Text: SEC CMOS-4L 1.5-M ICRON LOW-VOLTAGE CMOS GATE ARRAYS NEC Electronics Inc. February 1990 Description Figure 1. Sample CMOS-4L Packages NEC’s CMOS-4L family of 1.5-micron gate arrays are high-density, low-voltage application-specific integrated circuits ASICs that offer unique solutions for batterydriven circuits. Supply voltages ranging from 1.0 V to 5.5


    OCR Scan     		PDF

    pin diagram of full adder using Multiplexer IC

    Abstract: tr f422 UPD65000 fj01 F713 f422 F715 PD65080 F-661 F-642
    Text: N E C ELECTRONICS INC 7 5 D E ] b4E75B5 ODDfiBlfi 3 SEC NEC Electronics Inc. T-42-11 09 % ¿tPD65000 CMOS-3 SERIES cm os g a te a r r a y s 2 -m ic ro n January 1985 Description The//PD65000 (CMOS-3) series of gate arrays are lowpower, high-speed devices featuring 2-micron silicon


    OCR Scan     		b4E75B5 T-42-11 uPD65000 NECEL-000246-0185 pin diagram of full adder using Multiplexer IC tr f422 fj01 F713 f422 F715 PD65080 F-661 F-642 PDF

    F483

    Abstract: f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637
    Text: SEC V CMOS-5R 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIMINARY January 1990 Description Figure 1. Package Photo N EC 's C M O S -5R fa m ily com bines preconfigured static RAM blocks w ith a standard gate array architecture. By integrating m em ory and gate array logic on a single IC, the


    OCR Scan     		16k-bit 64k-bit IP-8001 F483 f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637 PDF

    CMOS-6A

    Abstract: F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking
    Text: NEC CM OS-6/6 A 1.0-MICRON CMOS g a t e a r r a y s NEC Electronics Inc. PRELIM INARY Description February 1990 Figure 1. Sample CMOS-6 Packages NEC’s CMOS-6 gate array families CMOS-6, CMOS6A are ultra-high performance, sub-micron channel length CM OS p ro du cts crea ted fo r h ig h -in te g ra tio n A S IC


    OCR Scan     		IP-8090 CMOS-6A F223 65630 F304 f422 F501 MOS l442 bt08 700201 L421 Marking PDF

    65630

    Abstract: RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442
    Text: *,yt * *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­


    OCR Scan     		IEU-7922, IP-8090 65630 RK4B 83nr-7843b ru4f RJ49 RJ4B NEC uPD 65658 transistor f423 F423 L442 PDF

    ru4f

    Abstract: F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425
    Text: *,yt * *W¿ NEC NEC Electronics Inc. C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CMOS-6V and CMOS-6X are ultra-high perform ­


    OCR Scan     		IEU-7922, IP-8090 ru4f F422 F423 rj8b "Single-Port RAM" TT 2246 RU89 BE09 L737 f425 PDF

    D65842

    Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
    Text: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform­ ance, sub-micron gate arrays, targeted for applications


    OCR Scan     		jPD65800 D65842 diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys PDF

    D65806

    Abstract: No abstract text available
    Text: W So 1393 C M O S -8 5 -V O L T , 0 .6 5 -M IC R O N CM OS GATE ARRAYS NEC NEC Electronics Inc. April 1993 Description Figure 1. Sample CMOS-8 Packages NEC’s 5-volt CMOS-8 family are ultra-high performance, s u b -m ic ro n gate a rra y s , ta rg e te d fo r a p p lic a tio n s


    OCR Scan     		65-micron D65806 PDF

    D65806

    Abstract: 9215K1
    Text: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications


    OCR Scan     		65-MICRON xPD65800 D65806 9215K1 PDF

    J18M

    Abstract: itt 2222 marking code F302 L-423 d 65632 "Single-Port RAM" marking L442 em 288 NEC uPD 65658 RU4D
    Text: <S *W¿ NEC C M O S -6 /6 A /6 V /6 X 1 .0 -M IC R O N C M O S G A TE A R R A Y S NEC Electronics Inc. April 1992 Description Figure 1. Sample CMOS-6/6A/6V/6X Packages NEC’s CMOS-6 gate array fam ilies CMOS-6, CMOS6A, CM OS-6V and CMOS-6X are ultra-high perform ­


    OCR Scan     		PDF

    transistor f422 equivalent

    Abstract: transistor f422 thomson CRT COLOUR TV SCHEMATIC DIAGRAM z80 ef9345 EF9345 TDA 9345 EF9367 TGS 813 difference between intel 8085 and motorola 6800 EF9345P
    Text: GRAPHIC PROCESSORS DATABOOK 1st EDITION MARCH 1989 TABLE OF CONTENTS INTRODUCTION Page 4 GENERAL INDEX 5 PRODUCT GUIDE 7 ALPHANUMERICAL and SEMI-GRAPHIC CRT CONTROLLERS 11 GRAPHICS CONTROLLERS 105 COLOR PALETTE 213 APPLICATION NOTES 247 3 INTRODUCTION The SGS-THOMSON Graphics data book contains comprehensive data on three


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