Untitled
Abstract: No abstract text available
Text: FFH30S60S 30 A, 600 V STEALTH II Diode Features Description • Stealth Recovery, trr = 40 ns @ IF = 30 A • Max. Forward Voltage, VF = 2.6 V (@ TC = 25°C) The FFH30S60S is STEALTH™ II diode with soft recovery characteristics using silicon nitride passivated ion-implanted
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FFH30S60S
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F30S60S
Abstract: FFP30S60S FFP30S60STU F30S60
Text: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP30S60S
FFP30S60S
F30S60S
FFP30S60STU
F30S60
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F30S60S
Abstract: avalanche diode 30A F30S60 30A Avalanche diode FFP30S60STU
Text: FFP30S60S tm 30A, 600V, STEALTH II Diode Features • Stealth recovery Trr = 40 ns @ IF = 30 A The FFP30S60S is a STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as
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FFP30S60S
FFP30S60S
O-220-2L
F30S60S
avalanche diode 30A
F30S60
30A Avalanche diode
FFP30S60STU
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F30S60S
Abstract: FFH30S60S
Text: FFH30S60S tm 30A, 600V, STEALTH II Diode Features • Stealth Recovery, Trr = 40 ns @ IF = 30 A • Max Forward Voltage, VF = 2.6 V (@ TC = 25°C) The FFH30S60S is STEALTH™ II Diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted
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FFH30S60S
FFH30S60S
O-247-2L
F30S60S
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F30S60S
Abstract: No abstract text available
Text: FFH30S60S tm Stealth 2 Rectifier Features 30A, 600V Stealth 2 Rectifier • High Speed Switching, rrt < 40ns @ IF = 30A • High Reverse Voltage and High Reliability The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial
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FFH30S60S
FFH30S60S
F30S60S
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Untitled
Abstract: No abstract text available
Text: FFH30S60S tm 30A, 600V STEALTH II Diode Features The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power
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FFH30S60S
FFH30S60S
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F30S60S
Abstract: FFH30S60STU F30S60 FFH30S60S
Text: FFH30S60S tm Stealth 2 Rectifier Features 30A, 600V Stealth 2 Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFH30S60S
FFH30S60S
F30S60S
FFH30S60STU
F30S60
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F30S60S
Abstract: No abstract text available
Text: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP30S60S
FFP30S60S
F30S60S
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F30S60S
Abstract: No abstract text available
Text: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 40ns @ IF = 30A • High Reverse Voltage and High Reliability The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP30S60S
FFP30S60S
F30S60S
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