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    F25 TRANSISTOR Search Results

    F25 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    F25 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F25 transistor

    Abstract: 2N6449 2N6450 equivalent 2N6450 IFN6449 IFN6450
    Text: Databook.fxp 1/13/99 2:09 PM Page F-24 F-24 01/99 NJ42 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ High Breakdown Voltage S Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts


    Original     		PDF 2N6449, 2N6450 IFN6449, IFN6450 F25 transistor 2N6449 2N6450 equivalent 2N6450 IFN6449 IFN6450

    schematic diagram inverter 12v to 24v 30a

    Abstract: inverter 5kva circuit diagram LB1542 2kva inverter circuit diagram dc to ac inverter schematic diagram inverter 5kva digitrip 310 time curve sim 900A ac Inverter schematics 10 kw Allen-Bradley 1336
    Text: Allen-Bradley Parallel DC Bus Supply Configurations Using Bulletin 2364E NRUs and Bulletin 2364F RGUs Bulletin 2364P User Manual Important User Information Solid-State equipment has operational characteristics differing from those of electromechanical equipment. “Safety Guidelines for the


    Original     		PDF 2364E 2364F 2364P 2364P-5 schematic diagram inverter 12v to 24v 30a inverter 5kva circuit diagram LB1542 2kva inverter circuit diagram dc to ac inverter schematic diagram inverter 5kva digitrip 310 time curve sim 900A ac Inverter schematics 10 kw Allen-Bradley 1336

    Catalog Sensors for Process Applications

    Abstract: NCB1.5-8GM25-N0 5M
    Text: FACTORY AUTOMATION CATALOG SENSORS FOR PROCESS APPLICATIONS 1FQQFSM 'VDIT°6OCFBUBCMFGPSRVBMJUZBOEDIPJDF 8F BSF B MFBEJOH NBOVGBDUVSFS PG JOEVTUSJBM TFOTPST BOE TFOTPS TZTUFNT 


    Original     		PDF 199003130E Catalog Sensors for Process Applications NCB1.5-8GM25-N0 5M

    230v dc to 440v ac inverter

    Abstract: FRN001E1S-4U FRn001 FRN003E1S-4U FRNF50E1S-7U FRN010E1S-4U FRN002E1S-4U 2u 62 diode WESTINGHOUSE dc motor FRN002E1S-7U
    Text: FRENIC-Multi series inverters, developed by Fuji Electric FA Components & Systems, are loaded with advanced technologies. The Multi series features class-highest control performance, abundant model variation, limited use of hazardous substances, reduced noise effect on peripheral equipment, and optimal


    Original     		PDF G07/G07) 230v dc to 440v ac inverter FRN001E1S-4U FRn001 FRN003E1S-4U FRNF50E1S-7U FRN010E1S-4U FRN002E1S-4U 2u 62 diode WESTINGHOUSE dc motor FRN002E1S-7U

    ultrasonic plastic welder circuit

    Abstract: MP-F25
    Text: I MP-F FIBER SELFCONTAINED-DC TYPE Components fa advanced technology Aromat Plastic fiber type MP-F Photoelectric Sensors Coaxial fiber type Glass fiber type Metal tube type MP-F25 MP-F5 MP-FD1 MP-FH5-02 MP-FHD1-02 MP-FX1 MP-FSD1-7 Thru-beam (Thru-beam (Diffuse


    OCR Scan     		PDF MP-F25 MP-FH5-02 MP-FHD1-02 ultrasonic plastic welder circuit

    2N2378

    Abstract: F25 transistor
    Text: M1'L-S-19500/289 EL AMENDMENT-3 18 APRIL 1966 SUPERSEDING AMENDMENT-2 11 September 1964 MILITARY SPECIFICATION TRANSISTOR, PNP, SILICON TYPE 2N2378 This Amendment forme a part of Military Specification MIL-S-19500/289(EL). 24 April 1964. Page 2 . paragraph 3.5:


    OCR Scan     		PDF L-S-19500/289 2N2378 MIL-S-19500/289 MIL-S-19500. 5961-A02? 2N2378 F25 transistor

    alu 74181

    Abstract: 25B22 f422 S2 f19
    Text: CFT1812A CFT1812A CFT1812A 32-bit ALU 74181-type DESCRIPTION: CFT1812A is a 32-bit ALU which is extended from the CFT1810A with the same functions. LOGIC SYMBOL : INPUTS (LOADING IN TRANSISTOR PAIRS ) : S3(4), S2(4), SI(4), SO(4 ), A31(2.5), A30(2.5),A29{2.5),


    OCR Scan     		PDF CFT1812A CFT1812A 32-bit 74181-type) CFT1810A alu 74181 25B22 f422 S2 f19

    Untitled

    Abstract: No abstract text available
    Text: VC O -110 Voltage Controlled Oscillator 1000-2000M Hz DESCRIPTION The VCO-110 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor design. A unique, low-noise bipolar transistor and a proprietary output coupling


    OCR Scan     		PDF 1000-2000M VCO-110

    n20 ic protector

    Abstract: ICP-F10 ACCI ICP-N38 ICP-S2.3 ICP-N50 icp-s1.8 ICP-N25 ICPF25 ICP-F50
    Text: Transistors 1C protector Circuit protection elements •C irc u it protection elements ROHM circuit protectors protect semiconductors and their circuits by means of an excellent cutoff capability. Acci­ dents due to load shorts which destroy IC’s and valuable LSI’s are too numerous to count. Regardless of whether


    OCR Scan     		PDF ICP-N25, ICP-F25 ICP-N38, ICP-F38 ICP-N50, ICP-F50 10/N15/N20/N25/N38/N50/N70 ICP-F10/F15/F20/F25/F38/F50/F70 ICP-N70, ICP-F70 n20 ic protector ICP-F10 ACCI ICP-N38 ICP-S2.3 ICP-N50 icp-s1.8 ICP-N25 ICPF25 ICP-F50

    F25 transistor

    Abstract: No abstract text available
    Text: SGS-THOMSON 2N5657 RJflD ^@HLiOT©li fl©i SILICON NPN TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedee SOT-32 plastic package. It is intended for use output amplifiers, low current,


    OCR Scan     		PDF 2N5657 2N5657 OT-32 OT-32 10OKHz F25 transistor

    B 511 transistor

    Abstract: 06548 TDB2046DP
    Text: TRANSISTOR ARRAYS The TDB2046 consists of 5 NPN general-purpose monolithic transistors. They are well suited to a wide range of applications and offer significant inherent integrated circuit advantages of excellent electrical characteristics matching and good thermal coupling thus minimizing temperature drifts.


    OCR Scan     		PDF TDB2046 TDB2046 DDb54fl O-116) CB-511 B 511 transistor 06548 TDB2046DP

    2N6687

    Abstract: 2N6686
    Text: HARRI S SEIUCOND SECTOR 5bE P • 4305271 G0M0b2b 7 T2 H H A S File Number 1171.1 2N6686,2N6687,2N6688 TERMINAL DESIGNATIONS FU&QE 25-A SwitchMax Power Transistore N -P -N Types for Power Supplies and O ther High Voltage Switching Applications JEDEC T0-204AA


    OCR Scan     		PDF 2N6686 2N6687 2N6688 T0-204AA 2N6688* 2N6686, 2N6687,

    Untitled

    Abstract: No abstract text available
    Text: D 1 O 2 O A - O 2 O 2 a / < 9 — !> ' Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • High Current • High DC Current Gain • Non Insulated Typ e : A p p lic a tio n s f High Power Switching • ftE ffW R S IK Uninterruptible Power Supply


    OCR Scan     		PDF 30S3-% I95t/R89

    T29521B

    Abstract: 2S521 FCT29
    Text: FCT Interface Logic Jfj H A R R IS S E M I C O N D U C T O R RCA HARRIS GE INTERSIL CD54/74FC T29520A , CD54/74FC T29520B T CD54/74FC T29521A , C D 54/74FCT29521BT July 1990 Multilevel Pipeline Registers Positive-Edge-T riggered Type Features: The CD54/74FCT29520A, 29520BT, 29521A and 29521 BT


    OCR Scan     		PDF CD54/74FC T29520A T29520B T29521A 54/74FCT29521BT 48/32-mA 700-MHz T29521B 2S521 FCT29

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER UPC2771T TEST CIRCUIT FEATURES • HIGH GAIN: 20 dB at 900 to 1500 MHz Typical • HIGH OUTPUT POW ER: PidB = +12 dBm at 900 MHz +11 dBm at 1500 MHz • LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum


    OCR Scan     		PDF UPC2771T UPC2771T UPC2771T-E3 34-6393/FAX

    54517P

    Abstract: M54517P
    Text: M ITSU B IS H I B IP O L A R D IG IT A L ICs M54517P 7 -U N IT 400m A DARLINGTON TR A N S ISTO R ARRAY DESCRIPTION The M54517P, 7-channel sink driver, consists of 14 NPN tran­ PIN CONFIGURATION TOP VIEW sistors connected to form seven high current gain driver


    OCR Scan     		PDF M54517P M54517P, 400mA 400mA, TaOE25 54517P 54517P M54517P

    2N5885

    Abstract: 2N 5883 2n 5886
    Text: TYPES 2N5885, 2N5886 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S D ESIG NED FOR C O M P L E M E N T A R Y USE W ITH 2N 5883, 2N 5884 • 200 Watts at 25°C Case Temperature • 25-A Rated Continuous Collector Current


    OCR Scan     		PDF 2N5885, 2N5886 90-mJ 2N5885 2N5885 2N 5883 2n 5886

    P2N50

    Abstract: tp2n50 TP2N45 MTP2N50 mtp2n45 Motorola 2N50 mtp2n50 transistor 2N50 2n50 ES ST 2N50
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 2N50 M T P 2N 45 M T P 2N 50 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FETs 2 AMPERES These TM O S P ow er FETs are designed fo r h ig h vo ltag e , high


    OCR Scan     		PDF MTM/MTP2N50, MTP2N45 P2N50 tp2n50 TP2N45 MTP2N50 mtp2n45 Motorola 2N50 mtp2n50 transistor 2N50 2n50 ES ST 2N50

    1ld2

    Abstract: e527 IL0251
    Text: SIEMENS CriPNTSi OPTO SIEM EN S 44E D m 023b35b 000501=1 7 Q S I E X IL250/251/252 ILD250/251/252 SINGLE CHANNEL DUAL CHANNEL BIDIRECTIONAL INPUT OPTOCOUPLERS FEATURES • A C o r Po la rity In s e n sitiv e In p u ts • S e le c te d C u rren t T r a n s fe r R a tio s


    OCR Scan     		PDF 023b35b IL250/251/252 ILD250/251/252 IL/ILD250/251/252 25ilA 20ttA IUILD2S0/251/252 1ld2 e527 IL0251

    C1684 r .85 transistor

    Abstract: transistor c1684
    Text: mm QUALITY PHOTOTRANSISTOR OPTOCOUPLER • [ te c h n o lo g ie s MCT275 DESCRIPTION The M CT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with a high voltage NPN silicon phototransistor.


    OCR Scan     		PDF MCT275 MCT275 E50151 C1683 C1684 C1685 C1284 C1296A C1684 r .85 transistor transistor c1684

    PJ 969 diode

    Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
    Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode


    OCR Scan     		PDF 500ns HGTG20N50C1D O-247 AN7254 AN7260) PJ 969 diode G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V

    Untitled

    Abstract: No abstract text available
    Text: HARRI S SEHICOND SECTOR ill H A R R IS \M J s e m i c o n d u c t o r bôE D • M3D2S71 HAS 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Features Package • 20 Amp, 400 and 500 Volt JEDEC TO-218 AC TOP VIEW • Vce on 2.5V Max.


    OCR Scan     		PDF M3D2S71 O-218 HGTH20N40C1D, HGTH20N40E1D HGTH20N50C1D, HGTH20N50E1D AN7254 AN7260) 100AJ

    M54973

    Abstract: M54973P
    Text: M I T S U B I S H I B IP O L AR OSGiTAL ICs MS4973P B I-C M O S 8 -B IT P A R A L L E L -IN P U T , LATC H ED D R IVER DESCRIPTION The M54973P is a semiconductor integrated circuit consist­ ing of eight CMOS latches and bipolar output drivers pro­ duct by a Bi-CMOS process.


    OCR Scan     		PDF MS4973P M54973P 300mA) M54973

    1DI200M-120

    Abstract: No abstract text available
    Text: 1 D I 2 M 2 0 2o o a - 1 POW ER TRAN SISTO R MODULE Features • High Arm Short Circuit Capability • h F E A ''S i' High DC Current Gain • 7 >J—sh'f V ' s W ' l KrtiR Including Free Wheeling Diode • t&t&M Insulated Type : Applications • iHffl'f >*< —9 General Purpose Inverter


    OCR Scan     		PDF i6467 95t/R89) 1DI200M-120