F25 transistor
Abstract: 2N6449 2N6450 equivalent 2N6450 IFN6449 IFN6450
Text: Databook.fxp 1/13/99 2:09 PM Page F-24 F-24 01/99 NJ42 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier ¥ High Breakdown Voltage S Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts
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2N6449,
2N6450
IFN6449,
IFN6450
F25 transistor
2N6449
2N6450 equivalent
2N6450
IFN6449
IFN6450
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schematic diagram inverter 12v to 24v 30a
Abstract: inverter 5kva circuit diagram LB1542 2kva inverter circuit diagram dc to ac inverter schematic diagram inverter 5kva digitrip 310 time curve sim 900A ac Inverter schematics 10 kw Allen-Bradley 1336
Text: Allen-Bradley Parallel DC Bus Supply Configurations Using Bulletin 2364E NRUs and Bulletin 2364F RGUs Bulletin 2364P User Manual Important User Information Solid-State equipment has operational characteristics differing from those of electromechanical equipment. “Safety Guidelines for the
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2364E
2364F
2364P
2364P-5
schematic diagram inverter 12v to 24v 30a
inverter 5kva circuit diagram
LB1542
2kva inverter circuit diagram
dc to ac inverter schematic diagram
inverter 5kva
digitrip 310 time curve
sim 900A
ac Inverter schematics 10 kw
Allen-Bradley 1336
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Catalog Sensors for Process Applications
Abstract: NCB1.5-8GM25-N0 5M
Text: FACTORY AUTOMATION CATALOG SENSORS FOR PROCESS APPLICATIONS 1FQQFSM 'VDIT°6OCFBUBCMFGPSRVBMJUZBOEDIPJDF 8F BSF B MFBEJOH NBOVGBDUVSFS PG JOEVTUSJBM TFOTPST BOE TFOTPS TZTUFNT
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199003130E
Catalog Sensors for Process Applications
NCB1.5-8GM25-N0 5M
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230v dc to 440v ac inverter
Abstract: FRN001E1S-4U FRn001 FRN003E1S-4U FRNF50E1S-7U FRN010E1S-4U FRN002E1S-4U 2u 62 diode WESTINGHOUSE dc motor FRN002E1S-7U
Text: FRENIC-Multi series inverters, developed by Fuji Electric FA Components & Systems, are loaded with advanced technologies. The Multi series features class-highest control performance, abundant model variation, limited use of hazardous substances, reduced noise effect on peripheral equipment, and optimal
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G07/G07)
230v dc to 440v ac inverter
FRN001E1S-4U
FRn001
FRN003E1S-4U
FRNF50E1S-7U
FRN010E1S-4U
FRN002E1S-4U
2u 62 diode
WESTINGHOUSE dc motor
FRN002E1S-7U
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ultrasonic plastic welder circuit
Abstract: MP-F25
Text: I MP-F FIBER SELFCONTAINED-DC TYPE Components fa advanced technology Aromat Plastic fiber type MP-F Photoelectric Sensors Coaxial fiber type Glass fiber type Metal tube type MP-F25 MP-F5 MP-FD1 MP-FH5-02 MP-FHD1-02 MP-FX1 MP-FSD1-7 Thru-beam (Thru-beam (Diffuse
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MP-F25
MP-FH5-02
MP-FHD1-02
ultrasonic plastic welder circuit
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2N2378
Abstract: F25 transistor
Text: M1'L-S-19500/289 EL AMENDMENT-3 18 APRIL 1966 SUPERSEDING AMENDMENT-2 11 September 1964 MILITARY SPECIFICATION TRANSISTOR, PNP, SILICON TYPE 2N2378 This Amendment forme a part of Military Specification MIL-S-19500/289(EL). 24 April 1964. Page 2 . paragraph 3.5:
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L-S-19500/289
2N2378
MIL-S-19500/289
MIL-S-19500.
5961-A02?
2N2378
F25 transistor
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alu 74181
Abstract: 25B22 f422 S2 f19
Text: CFT1812A CFT1812A CFT1812A 32-bit ALU 74181-type DESCRIPTION: CFT1812A is a 32-bit ALU which is extended from the CFT1810A with the same functions. LOGIC SYMBOL : INPUTS (LOADING IN TRANSISTOR PAIRS ) : S3(4), S2(4), SI(4), SO(4 ), A31(2.5), A30(2.5),A29{2.5),
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CFT1812A
CFT1812A
32-bit
74181-type)
CFT1810A
alu 74181
25B22
f422
S2 f19
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Untitled
Abstract: No abstract text available
Text: VC O -110 Voltage Controlled Oscillator 1000-2000M Hz DESCRIPTION The VCO-110 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable high-Q varactor design. A unique, low-noise bipolar transistor and a proprietary output coupling
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1000-2000M
VCO-110
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PDF
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n20 ic protector
Abstract: ICP-F10 ACCI ICP-N38 ICP-S2.3 ICP-N50 icp-s1.8 ICP-N25 ICPF25 ICP-F50
Text: Transistors 1C protector Circuit protection elements •C irc u it protection elements ROHM circuit protectors protect semiconductors and their circuits by means of an excellent cutoff capability. Acci dents due to load shorts which destroy IC’s and valuable LSI’s are too numerous to count. Regardless of whether
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ICP-N25,
ICP-F25
ICP-N38,
ICP-F38
ICP-N50,
ICP-F50
10/N15/N20/N25/N38/N50/N70
ICP-F10/F15/F20/F25/F38/F50/F70
ICP-N70,
ICP-F70
n20 ic protector
ICP-F10
ACCI
ICP-N38
ICP-S2.3
ICP-N50
icp-s1.8
ICP-N25
ICPF25
ICP-F50
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F25 transistor
Abstract: No abstract text available
Text: SGS-THOMSON 2N5657 RJflD ^@HLiOT©li fl©i SILICON NPN TRANSISTOR • SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedee SOT-32 plastic package. It is intended for use output amplifiers, low current,
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2N5657
2N5657
OT-32
OT-32
10OKHz
F25 transistor
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PDF
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B 511 transistor
Abstract: 06548 TDB2046DP
Text: TRANSISTOR ARRAYS The TDB2046 consists of 5 NPN general-purpose monolithic transistors. They are well suited to a wide range of applications and offer significant inherent integrated circuit advantages of excellent electrical characteristics matching and good thermal coupling thus minimizing temperature drifts.
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TDB2046
TDB2046
DDb54fl
O-116)
CB-511
B 511 transistor
06548
TDB2046DP
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2N6687
Abstract: 2N6686
Text: HARRI S SEIUCOND SECTOR 5bE P • 4305271 G0M0b2b 7 T2 H H A S File Number 1171.1 2N6686,2N6687,2N6688 TERMINAL DESIGNATIONS FU&QE 25-A SwitchMax Power Transistore N -P -N Types for Power Supplies and O ther High Voltage Switching Applications JEDEC T0-204AA
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2N6686
2N6687
2N6688
T0-204AA
2N6688*
2N6686,
2N6687,
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Untitled
Abstract: No abstract text available
Text: D 1 O 2 O A - O 2 O 2 a / < 9 — !> ' Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • High Current • High DC Current Gain • Non Insulated Typ e : A p p lic a tio n s f High Power Switching • ftE ffW R S IK Uninterruptible Power Supply
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30S3-%
I95t/R89
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T29521B
Abstract: 2S521 FCT29
Text: FCT Interface Logic Jfj H A R R IS S E M I C O N D U C T O R RCA HARRIS GE INTERSIL CD54/74FC T29520A , CD54/74FC T29520B T CD54/74FC T29521A , C D 54/74FCT29521BT July 1990 Multilevel Pipeline Registers Positive-Edge-T riggered Type Features: The CD54/74FCT29520A, 29520BT, 29521A and 29521 BT
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CD54/74FC
T29520A
T29520B
T29521A
54/74FCT29521BT
48/32-mA
700-MHz
T29521B
2S521
FCT29
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER UPC2771T TEST CIRCUIT FEATURES • HIGH GAIN: 20 dB at 900 to 1500 MHz Typical • HIGH OUTPUT POW ER: PidB = +12 dBm at 900 MHz +11 dBm at 1500 MHz • LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum
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UPC2771T
UPC2771T
UPC2771T-E3
34-6393/FAX
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54517P
Abstract: M54517P
Text: M ITSU B IS H I B IP O L A R D IG IT A L ICs M54517P 7 -U N IT 400m A DARLINGTON TR A N S ISTO R ARRAY DESCRIPTION The M54517P, 7-channel sink driver, consists of 14 NPN tran PIN CONFIGURATION TOP VIEW sistors connected to form seven high current gain driver
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M54517P
M54517P,
400mA
400mA,
TaOE25
54517P
54517P
M54517P
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PDF
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2N5885
Abstract: 2N 5883 2n 5886
Text: TYPES 2N5885, 2N5886 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S D ESIG NED FOR C O M P L E M E N T A R Y USE W ITH 2N 5883, 2N 5884 • 200 Watts at 25°C Case Temperature • 25-A Rated Continuous Collector Current
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2N5885,
2N5886
90-mJ
2N5885
2N5885
2N 5883
2n 5886
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PDF
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P2N50
Abstract: tp2n50 TP2N45 MTP2N50 mtp2n45 Motorola 2N50 mtp2n50 transistor 2N50 2n50 ES ST 2N50
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M TM 2N50 M T P 2N 45 M T P 2N 50 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FETs 2 AMPERES These TM O S P ow er FETs are designed fo r h ig h vo ltag e , high
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MTM/MTP2N50,
MTP2N45
P2N50
tp2n50
TP2N45
MTP2N50
mtp2n45
Motorola 2N50
mtp2n50 transistor
2N50
2n50 ES
ST 2N50
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PDF
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1ld2
Abstract: e527 IL0251
Text: SIEMENS CriPNTSi OPTO SIEM EN S 44E D m 023b35b 000501=1 7 Q S I E X IL250/251/252 ILD250/251/252 SINGLE CHANNEL DUAL CHANNEL BIDIRECTIONAL INPUT OPTOCOUPLERS FEATURES • A C o r Po la rity In s e n sitiv e In p u ts • S e le c te d C u rren t T r a n s fe r R a tio s
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023b35b
IL250/251/252
ILD250/251/252
IL/ILD250/251/252
25ilA
20ttA
IUILD2S0/251/252
1ld2
e527
IL0251
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PDF
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C1684 r .85 transistor
Abstract: transistor c1684
Text: mm QUALITY PHOTOTRANSISTOR OPTOCOUPLER • [ te c h n o lo g ie s MCT275 DESCRIPTION The M CT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with a high voltage NPN silicon phototransistor.
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MCT275
MCT275
E50151
C1683
C1684
C1685
C1284
C1296A
C1684 r .85 transistor
transistor c1684
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PDF
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PJ 969 diode
Abstract: G20N50c 20N50C1D pj 986 diode F25 transistor mosfet 20n GE 639 pj 809 IGBT 500V 35A igbt 20A 500V
Text: HGTG20N50C1D M o r r is 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A ,500V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time < 500ns • High Input Im pedance • Low Conduction Loss • With Anti-Parallel Diode
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500ns
HGTG20N50C1D
O-247
AN7254
AN7260)
PJ 969 diode
G20N50c
20N50C1D
pj 986 diode
F25 transistor
mosfet 20n
GE 639
pj 809
IGBT 500V 35A
igbt 20A 500V
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Untitled
Abstract: No abstract text available
Text: HARRI S SEHICOND SECTOR ill H A R R IS \M J s e m i c o n d u c t o r bôE D • M3D2S71 HAS 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Features Package • 20 Amp, 400 and 500 Volt JEDEC TO-218 AC TOP VIEW • Vce on 2.5V Max.
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M3D2S71
O-218
HGTH20N40C1D,
HGTH20N40E1D
HGTH20N50C1D,
HGTH20N50E1D
AN7254
AN7260)
100AJ
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PDF
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M54973
Abstract: M54973P
Text: M I T S U B I S H I B IP O L AR OSGiTAL ICs MS4973P B I-C M O S 8 -B IT P A R A L L E L -IN P U T , LATC H ED D R IVER DESCRIPTION The M54973P is a semiconductor integrated circuit consist ing of eight CMOS latches and bipolar output drivers pro duct by a Bi-CMOS process.
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MS4973P
M54973P
300mA)
M54973
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PDF
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1DI200M-120
Abstract: No abstract text available
Text: 1 D I 2 M 2 0 2o o a - 1 POW ER TRAN SISTO R MODULE Features • High Arm Short Circuit Capability • h F E A ''S i' High DC Current Gain • 7 >J—sh'f V ' s W ' l KrtiR Including Free Wheeling Diode • t&t&M Insulated Type : Applications • iHffl'f >*< —9 General Purpose Inverter
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i6467
95t/R89)
1DI200M-120
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