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    F1687

    Abstract: No abstract text available
    Text: F1687NC HSXAWAVE Medium Power GaAs FET September 1998 Rev.B Features • Output Power • High Gain P i d B = 3 1.5dBm typ. @2.4GHz Outline Drawing G l= 14dB(typ.)@2.4GHz • U nit: £ g n Thickness: 100; High Efficiency 860 Tiadd =45%(typ.)@2.4GHz • High Linearity


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    HWF1687NC 46dBm F1687N F1687 PDF