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    F12 MOSFET Search Results

    F12 MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    F12 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MP6101

    Abstract: Power MOSFET, P, toshiba mp4002 mp4002 MP4004 toshiba mp6101 MP3202 mp6401 mp6401 toshiba SWITCH PIN DIODE MP6002 mp6002
    Text: Power Modules PRODUCT GUIDE CONTENTS 1. 2. 3. 4. 5. 6. Product List Introduction to the Products and Their Features Structure and Dimensions Power Module Packages System Diagram of Power Module Products Power Module Product Matrix 7. Product Line-ups Listed by Package


    Original     		PDF MP4005~ MP4101~ MP4301~ MP6301 MP4501~ MP6901 S-10M MP4208~ S-12M MP4410~ MP6101 Power MOSFET, P, toshiba mp4002 mp4002 MP4004 toshiba mp6101 MP3202 mp6401 mp6401 toshiba SWITCH PIN DIODE MP6002 mp6002

    Untitled

    Abstract: No abstract text available
    Text: Product specification WPM2341A P-Channel Enhancement Mode Mosfet Features z Higher Efficiency Extending Battery Life z Miniature SOT23-3 Surface Mount Package z Super high density cell design for extremely low RDS ON 3 1 Applications 2 zDC/DC Converter


    Original     		PDF WPM2341A OT23-3

    NCP6131

    Abstract: 6TPE150MAZB 6TPG100M SANYO 2R5TPE470M7 2TPE470M6 6TPE220MAZB 2TPLF470M4E 25TQC5R6M 2TPLF470M6 2TPE470M7
    Text: Capacitors General Catalog 2010-7 Aluminum Solid Capacitors with Conductive Polymer Tantalum Solid Capacitors with Conductive Polymer www.edc.sanyo.com Feature Feature Solid electrolytic capacitors with conductive polymer to meet the needs of all electronic equipments in the world


    Original     		PDF

    sanyo OS-CON SH

    Abstract: sanyo 100uf 16v sepc 10SEQP270M T sanyo OS-CON sg SMD MARKING CODE w02 10SEP560M solid capacitor SEPC 560uf 4V sanyo os-con sl 6SEPC1500M 25SEP10M
    Text: '04 -10 12 SANYO Electric Co., Ltd. Electronic Device Company About this catalog •The contents of this catalog are current as of September 2004, but product names and specifications are subject to change for improvement or discontinuation without notice. When ordering products, please be sure


    Original     		PDF 2604-Forrest Singapore/079905/Singapore sanyo OS-CON SH sanyo 100uf 16v sepc 10SEQP270M T sanyo OS-CON sg SMD MARKING CODE w02 10SEP560M solid capacitor SEPC 560uf 4V sanyo os-con sl 6SEPC1500M 25SEP10M

    LTM4601

    Abstract: 12a h3 fuse LTM4601EV-1#PBF LTM4601V LTM4601-1 a4601 logo 230 c
    Text: LTM4601/LTM4601-1 12A DC/DC µModules with PLL, Output Tracking and Margining DESCRIPTION FEATURES n n n n n n n n n n n n n n n n n The LTM 4601 is a complete 12A step-down switch mode DC/DC power supply with onboard switching controller, MOSFETs, inductor and all support components. The


    Original     		PDF LTM4601/LTM4601-1 LTM4601 LTM4601-1 LTM4602 LTM4600 LTM4603 LTM4601 4601fb 12a h3 fuse LTM4601EV-1#PBF LTM4601V a4601 logo 230 c

    LED backlight schematic laptop

    Abstract: smd transistor f24 sot23 elantech touch smd transistor 5d sot-23 strain gauge n6 EVQ-QS205K transistor SMD making code 3f alps encoder Diode smd f6 SMD TRANSISTOR j8
    Text: SH2165 PixiKey Programmable Keyboard Encoder & Force Stick Encoder HID & SYSTEM MANAGEMENT PRODUCTS, KEYCODER FAMILY The SH2165 PixiKey™ is a costeffective, high-functionality combination keyboard and mouse encoder which offers a programmable keyboard matrix and


    Original     		PDF SH2165 18-column LED backlight schematic laptop smd transistor f24 sot23 elantech touch smd transistor 5d sot-23 strain gauge n6 EVQ-QS205K transistor SMD making code 3f alps encoder Diode smd f6 SMD TRANSISTOR j8

    ic driver mosfet 8 pin

    Abstract: 14 pin ic 555 DRIVER MOSFET IR IGBT DRIVER SCHEMATIC 3 PHASE IR2132 igbt gate driver IR igbt gate driver ic IR2113 APPLICATIONS Mosfet driver IR2130 ir 2112 applications IGBT gate drivers
    Text: International ^ R e c tifie r Pow er Integrated Circuits Control 1C Applications High Voltage Power MOSFET/IGBT Gate Drivers Features Single Drivers Half Bridge Drivers — IR —*• - -it! MOSFET “IQ IH MOSFET y — IR IGBT y —1^ IGBT — 1 1 Three Phase Drivers


    OCR Scan     		PDF IR2130 2130J 2130S IR2132 IR2132J 2132S IR2110 IR2113 ic driver mosfet 8 pin 14 pin ic 555 DRIVER MOSFET IR IGBT DRIVER SCHEMATIC 3 PHASE IR2132 igbt gate driver IR igbt gate driver ic IR2113 APPLICATIONS Mosfet driver IR2130 ir 2112 applications IGBT gate drivers

    IRFD620

    Abstract: IRFD420 IRFD9220 h10 npn
    Text: International lo i Rectifier HEXFET Power MOSFETs HEXDips Low charge HEXFETs reduce gate charge by 40% or more and capacitances by up to 85% without any added device cost. Part Number IRF0C10LC V BR d s s Drain-to-Source ROS(on) lg Continuous On-State Drain Current


    OCR Scan     		PDF IRF0C10LC IRFD014 IRFD024 IRFD110 IRFD120 IRFD210 IRFD220 IRFD214 IRFD224 IRFD310 IRFD620 IRFD420 IRFD9220 h10 npn

    mp4001

    Abstract: MP4001 equivalent transistor equivalent table bipolar transistor NEC MP4501 mp4001 tran
    Text: Power Transistor M odule and Power MOS-FET M odule As the density of electronic part mounting continues to increase in the field of discrete products, miniaturization of the hybrid devices named super mini and power mini is advancing rapidly. There are also calls for miniaturization and


    OCR Scan     		PDF 700cm1 300cmJ mp4001 MP4001 equivalent transistor equivalent table bipolar transistor NEC MP4501 mp4001 tran

    15N60

    Abstract: K 15N60
    Text: Tfl SAMSUNG SEMICO NDUCT OR INC ^ r E SSM15N55/15N60 SSH15N55/15N60 OODSaiD T- Ä ^ 4 NNELm i POWER MOSFETS - e iÄ ” Preliminary Specifications PRODUCT SUMMARY 600 Volt, 0.5 Ohm SFET Part Number Vos RDS on SSM15N55 550V 0.5Q 15A SSM15N60


    OCR Scan     		PDF SSM15N55/15N60 SSH15N55/15N60 SSM15N55 SSM15N60 SSH15N55 SSH15N60 15N60 K 15N60

    SM25N

    Abstract: ssm25n40
    Text: SAMSUNG S E M I C ON DU CT OR INC . ‘ S S m I^ ^ Tfi’ DE | 7Tb414H DOOSBTB 4 ^ ^ ^ m ^N -C H A N N È L:^^ SSH25N35/25N40 POWER MOSFETS Preliminary Specifications 5 . PRODUCT SUMMARY 400 Volt, 0.25 Ohm SFET Part Number R D S on Id 350V ' 0.25 25A SSM25N40


    OCR Scan     		PDF 7Tb414H SSH25N35/25N40 SSM25N35 SSM25N40 SSH25N35 SSH25N40 SSM25N35/25N40 SM25N

    ssm8n55

    Abstract: SSM8N60
    Text: •7964142 Tf l ' DE I 7Tbm4S SAMSUNG SEMICONDUCTOR □ □ 0 S 3 2 ci h -V 98D IN C 05329 _ D ' _ : . ' 7 - - J 7 - / 3 -• N-CHANNEL POWER MOSFETS SSM8N55/8N60 FEATURES • • • • • .• • • • Low Ros<on at high voltage


    OCR Scan     		PDF SSM8N55/8N60 SSM8N55 SSM8N60 00GS435 SSM8N60

    Irfp450

    Abstract: No abstract text available
    Text: [ ' - 7964142 SAM SUN G S EM IC O N D UCTOR INC D eT | 7 ^ 4 1 4 2 9 8D 0 5 2 2 4 □□□5524 3 | D T ~ 3 i -1 3 N-CHANNEL POWER MOSFETS IRFP450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability


    OCR Scan     		PDF IRFP450/451/452/453 IRFP250 IRFP251 IRFP252 IRFP253 IRFP450 IRFP451 OOGS43S Irfp450

    atc 17-33

    Abstract: atc 1733 860-960MHz
    Text: ERICSSON ^ PTF 10036 85 Watts, 860-960 MHz LDMOS Field Effect Transistor Description The 10036 is an internally matched, common source n-channel, enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 960 MHz. It is rated at 85 watts minimum output


    OCR Scan     		PDF

    IRF150

    Abstract: IRF150 MOSFET IRF150 To3 package IRF-150 IRF150 on semi
    Text: 7964142 SAMSUNG SEMICONDUCTOR Tfl D e J 7Tti414E DD0SDÛ4 a f 98 D 0 5084 INC L' D T -SVIli N-CHANNEL POWER MOSFETS IRF150/151/152/153 FEATURES Low RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance


    OCR Scan     		PDF 7Tti414E IRF150/151/152/153 IRF150 IRF151 IRF152 IRF153 00GS435 IRF150 MOSFET IRF150 To3 package IRF-150 IRF150 on semi

    IRF130

    Abstract: irf131 142SA
    Text: 796 4 1 4 2 _ J Tfl SAMSUNG S E M I CONDÜCTOR DE I T T t i M l M S D0DS074 IN C 98D □ 05074 D T ^ -II N-CHANNEL POWER MOSFETS IRF130/131/132/133 FEA TU R E S LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF D0DS074 IRF130/131/132/133 IRF130 IRF131 IRF132 IRF133 00US435 F--13 142SA

    Untitled

    Abstract: No abstract text available
    Text: - Z a ê A i^ ^ S A M S U N ^ ^fi íP k n r n M n i i r 'T n R DE~J 7 T b 4m S 98D Tw n-—- v ODDSIST T | - 05129 D7-3?~f/ N-CHANNEL POWER MOSFETS IRF420/421 /422/423 FEA TU R ES Low Ros on at high voltage Improved inductive ruggedness. Excellent high voltage stability


    OCR Scan     		PDF IRF420/421 IRF420 IRF421 IRF422 IRF423 00GS435 F--13

    IRF9640 irf9240

    Abstract: irfp 9640 IRF9640 semiconductor IRF 9640 9243 f9640 IRF9642 FP9240 irfp9240
    Text: D 98D 05420 _7964142 S A MS UN G SE MIC O N D U C T OR INC_ IRF9240/9241/9242/9243?-^l ^b4ji4d uuuò4du . f "V * ir m ii V k L ~ ’ IRFP9240/9241/9242/9243 POWER MOSFETS IRF9640/9641 /9642/9643 Tfl Preliminary Specifications D E | 7 cì b 4 1 , 4 2 000S4S0


    OCR Scan     		PDF IRF9240/9241/9242/9243 IRFP9240/9241/9242/9243 IRF9640/9641 FP9240, F9640 F/IRFP9241, IRF9641 IRF/IRFP9242, F9642 IRF/IRFP9243, IRF9640 irf9240 irfp 9640 IRF9640 semiconductor IRF 9640 9243 IRF9642 FP9240 irfp9240

    F233

    Abstract: IRF230
    Text: 7964142 k | 7WHS OGOSG^HSf SAMSUNG SEM ICON DU CTOR I N C _ 98D 0 5 0 9 4 _D T * 3 V l I "-CHANNEL POWER MOSFETS IRF230/231/232/233 FEATURES LOW RDS on Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure Low input capacitance


    OCR Scan     		PDF IRF230/231/232/233 IRF231 00GS435 F233 IRF230

    Untitled

    Abstract: No abstract text available
    Text: 7964142 SAMSUNG S E M I C O N D U CTOR INC 98D 05204 N-CHANNEL ’ POWER MOSFETS , IRFP350/351/352/353 Tfl ImF FEATURES ^4145 □ G OSE □ 4 Ô Low Ros<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance


    OCR Scan     		PDF IRFP350/351/352/353 IRFP250 IRFP251 IRFP252 IRFP253 IRFP350 IRFP351 IRFP352 IRFP353 00GS435

    Untitled

    Abstract: No abstract text available
    Text: 7 9 6 4 1 4 2 SAM SUNG hfl S E M ICO N D U CTO R 9 8 D I N C _ DE I TTtiMlMS □□□SDflcl 1 050 8 9 d T -J ? N-CHANNEL POWER MOSFETS IRF220/221/222/223 FEA TU R ES • Low R d S o ii • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF IRF220/221/222/223 IRF220 IRF221 IRF222 IRF223 00GS435 F--13

    IRF9120

    Abstract: IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRF9520 IRFP9121
    Text: IRF9120/912110122/9123 « IRFP9120/9121 /9122/9123: IRF9520/9521 /9Ö22/9523 •. P-CHANNEL POWER MOSFETS P r e l i m i n a r y Sn&nifinatinncì Tfi DE 7 clfc>41Lt2 D0054DE 1 | ” uuv/i öUmiviAKY •y*' 3 ^ SAMSUNG SEM ICO ND UC TOR INC -1 0 0 volt, 0.60 Ohm SFET


    OCR Scan     		PDF IRF9120/912110122/9123 IRFP9120/9121 IRF9520/9521 D0054DE IRF/IRFP9120, IRF9520 IRF/IRFP9121, IRF9521 IRF/IRFP9122, IRF9522 IRF9120 IRFP9120 IRF9120 mosfet IRF9121 IRF 9520 IRF 9120 IRF912213 IRF 9122 IRFP9121

    IRF44

    Abstract: IRF440
    Text: ; 7964142 DE I T T b m M E SAMSUNG S E M I C O N D U C TOR □ □ □ 5 1 3 e] 1 I 98D IN C ^ D T S f -t3 05139 N-CHANNEL POWER MOSFETS IRF440/441/442/443 FEATURES • • • • • • • • • Low RDS on at high voltage Improved inductive ruggedness


    OCR Scan     		PDF IRF440/441/442/443 IRF440 IRF441 IRF442 IRF443 00GS435 F--13 IRF44

    f341

    Abstract: 2S1214
    Text: Tfi 7 9 6 4 142 SAMSUNG ¡> F | 7 ^ 4 1 4 3 SE M IC O N D U C T O R D G D S in t, | .9 8 D O 51 1 9 I NC D T -3 f-'/3 N-CHANNEL POWER MOSFETS . - IRF340/341/342/343 FEATURES • L o w R DS on • Improved inductive ruggedness Fast switching times .


    OCR Scan     		PDF IRF340/341/342/343 F--13 f341 2S1214