Untitled
Abstract: No abstract text available
Text: 6427525 N E C ELECTRONICS tiME75E!5 O G l f i W INC 9ÔD 18989 D -f- 3 ? W 3 1 |~ -••\.vs't.¿V-.-s:>•■*. V i r - v ,.-'•; - ? % § < , & V-ïÿ' ELECTRON DEVICE M O S " F I E L D ' 'E F F E~C T " T R Ä N S I S T 0 ?.~ /' • 2 S K F A S T
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tiME75E
h427sa5
T-39-13
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for1a
Abstract: 2SJ137 2SJ13
Text: N E C ELECTRONICS INC Tfl DE|L457SBS GDnGSl PRELIMINARY SFEClFiCAT.C'MOS FIELD EFFECT T RAN' S I S T C: 2S J 137 FAST SWITCHING P-CHANNEL SILICON POWER MOS FET PACKAGE DIM EN SIO N S Features Unit : mm Suitable for switching power supplies, actuator controls and pulse circuits
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2SJ137
T-39-19
L42752S
CHARAC7E2IS71CS
J2263S
for1a
2SJ137
2SJ13
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k 3919
Abstract: CI047 f0r1a F0R1
Text: 6427525 N E C N EC ELECTRONICS 98D INC 19047 T" 39 W D ~Tfl I ¥ l b 427 SHS 0 D l ci 047 1 ' J r _ PR EL IM IN AR Y SrECiFiCATIC' >rEC ELECTRONICS INC MOS FIELD I RAN 'S 1S T . EFFECT ELECTRON DEVICE S 2 FAST SWITCHING P - C H A X X E L S I L I C O N POWER
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IDCDO-12A
12Pulse
T-39-19
4E7525
k 3919
CI047
f0r1a
F0R1
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2SJ13
Abstract: for1a
Text: 6 4 2 7 525 N E C N E C D 98D 19055 EL EC TRO NIC S INC ELEC TRO NIC S INC 1C DET|hM27S55 ODITGSS f- K t- L - lIV lIIN M « T MOS FIELD EFFECT A Jr- ¡CAT ¡C O r - il^ T r T R A N S I ST ELECTRON DEVICE _ 2 FAST SWITCHING
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hM27S55
2SJ13
J22586
2SJ13
for1a
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for1a
Abstract: eic73 2SK821
Text: 64 27 525 N E C ELEC TRO NIC S INC 98D 18989 3 tiME7S2S □□IfiTflT 1 |"“ ••. . .,.r NEQm ' w ELECTRON DEVICE MO S y FIEL D P A C K A G E D IM E N S IO N S {Unit: mm _ _ _ _ _ _ " Jl T R A N S I S T G ?. 2SK821 / FAST S W IT C H IN G ft-CHANNEL
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bME7555
2SK821
J22566
for1a
eic73
2SK821
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for1a
Abstract: 2SJ133 6C Y TCH C111
Text: 6427525 N E C N E C ELECTRONICS ELECTRONICS INC 98D I NC Tû MO § D 'f-'lf-J? 19035 DE | b MS T S S S FIELD 00nD3S EFFECT 2 S FAST SWITCHING P - C H A N N E L S I L I C O N P O WE R MÓS S T R A N S I S T C?. J 1 3 3 FET Features p a c k a g e dimensions
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2SJ133
642752S
T-39-lq
b4E75ES
for1a
2SJ133
6C Y
TCH C111
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k 3919
Abstract: f0r1a for1a 2SJ140 10C00 NEC 9801
Text: N E C ELECTRONICS _ 98D >9063 E C ELECTRONICS INC m D T - it- 4 DE|fc,M27SS5 D 0 n 0 b 3 ? | INC P R E LIM IN A R Y SPEC IFiC A TiC .*. MOS e FIELD E F F E C T T R A N ' S I ST-'. ELECTRON DEVICE 2 FAST S W I T C H I N G P - C H A N N E L S I L I C O N
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2SJ140
J22636
k 3919
f0r1a
for1a
2SJ140
10C00
NEC 9801
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D 739
Abstract: No abstract text available
Text: N E C ELEC T RO N IC S INC ~Tfl »F|t4E7SaS □ 03.'TO43 1 J ~ T ~ 3 ? ^ / ? PR E LIM IN A R Y S P E C I F I C A T A - MOS FIELD EFFECT TRAXSiSTC ELECTRON DEVICE FAST SWITCHING P —C H A N N E L S IL IC O N POWER PACKAGE DIMENSIONS Suitable for switching power supplies,
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-100V
4275ES
D 739
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC "tö deT| b 4 a ?5 E S oonoTs 3 | ~ 7 ^—3 ^^-1 <J P R E L IM IN A R Y S P E C IF IC A T A ‘ MOS FIELD EFFECT ELECTRON DEVICE TRANSIS 2 S J 143 FAST SWITCHING P - C HAN NE L SILICON POWER PACKAGE DIMENSIONS MOS FET Features . Su itab le fo r switching power supplies,
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Untitled
Abstract: No abstract text available
Text: 6427525 N E C N E C ELECTRONICS ELECTRONICS INC 98D D E |b M E 7 S 5 S INC MOÇ D X ^ 1 f -/? 19035 FIELD OOITDBS EFFECT E TRANS I STC = ELECTRON DEVICE 's FAST SWITCHING P-CHANNEL S IL IC O N POWER 3 , I ill 0.6 = 0.1 Absolute Maximum Ratings Ta=25*C Drain t o Source Voltage
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-55to-M50
-39-lq
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for1a
Abstract: 2SJ142 nec 251c 251c nec PGTL 251C f0r1a
Text: 6427525 N E C N E C ELECTRONICS I N C _ 9 8 D ELEC TRO NIC S INC Tfl 1 9 0 71 D T — S q — i* DE | b427555 GGIIG?! h h r e u m i i n a k y MOS FIELD EFFECT a i - t t i f l u A T i C i T RAN’ S I S T o : 2 S J 142 FAST SWITCHING P - C H A N N E L S I L I C O N POWER
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2SJ142
T-39-19
J22686
for1a
2SJ142
nec 251c
251c nec
PGTL
251C
f0r1a
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Untitled
Abstract: No abstract text available
Text: 6427525 N E C N E C E L E C T R O N IC S ELECTRONICS 98D IN C Tfl INC M O S o 19055 ic D E | h M 2 77 SS5S 55 O a DoInTaG sS sS A f-KtL-iiviiiNM« T artiTr ¡CATiC Jr- ¡ C F I E L D E F F E C T T R A a S!ST ELECTRON DEVICE ._2 S F A S T
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T-39-19
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k 3919
Abstract: 2SJ137
Text: N E C ELECTRONICS INC ' Tfi DE j b 4 S 7 S B S O D n D S l □ | ~ T ^ P RELIMINARY SFEClFiCAT.C MOS FIELD EFFECT TRAXSISTC: 2SJ137 FAST SWITCHING P-CHANNEL SILICON POWER MOS FET PACKAGE DIMENSIONS Features U nit : m m Suitable for switching power supplies,
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2SJ137
T-39-19
h427S2S
S71CS
k 3919
2SJ137
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k 3919
Abstract: No abstract text available
Text: E C ELE CT RO NI CS I N C T 64 275 25 N E C ELE CTR ON IC S INC f l d F | l 4 2 7 S 2 S DDl^DL? 4 f 98D 19067 D -f-' 3 PRELIMINARY SPECiFiCATiC'- P - C HANNEL SILICON PACKAGE DIM ENSIONS POWER MOS FET Features Suitable for switching power supplies, actuator controls and pulse circuits
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b427S5S
k 3919
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k 3919
Abstract: 2SJ141 tonyo for1a
Text: E C E LEC T R O N IC S 6427525 N E C IN C Tfl E LE C T R O N IC S IN C 1> F | l 4 S 7 5 S S 98D 19067 D D l^ D L ? D 4 'f - '5 PR E L IM IN A R Y S P E C iF iC A 7 !C ‘- P — C H A K r NTE L S IL IC O N PACKAGE DIM ENSIO N S POWER MOS FET Features Suitable for switching power supplies,
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642752S
2SJ141
DisT-39-19
b4E75ES
ELEC77Ã
J22536
k 3919
2SJ141
tonyo
for1a
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6CW 60
Abstract: 6CW 43 6cw 50 lti 1302 CJRB g98d
Text: N E C ELECTRONICS INC ~Tfl ì F |b U 5 7 5 2 S O D IA IS _ MOS 3 |~ , T • '3 e) ' - t[_ FIELD EFFECT TRAXS1ST' ELECTRON DEVICE 10 FAST SWITCHING N-CHANNEL SILICON POWER MOS FET Features S u ita b le fo r switching power supplies, actuator controls and pulse c ir c u it s
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bU5752S
IDCD014A
DEjt427SaS
T-39-11
6CW 60
6CW 43
6cw 50
lti 1302
CJRB
g98d
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k 3919
Abstract: No abstract text available
Text: N E C E L E C T R ON I C S INC 98D >9063 D 'T DE I b4H7SSS D O n O b B 7 | P R E L IM IN A R Y SP EC IFiC ATiC .* . NEC E C ELECT RO NI CS INC MO S F I E L D E F F E C T T R A N ' S I ST-' . ELECTRON DEVICE .
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2SJ136
Abstract: ID4C
Text: 6427525 N E C N E C ELECTRON ICS 98D INC ~Tñ ELECTRONI CS I NC 19047 D T~ J 9 - /f I F | b 4 2 7 S H S D D l ciD47 I jT PRELIMINARY S r E C i F i C A ' MOS JLj FIELD EFFECT IRAN' S 1S T - ELECTRON DEVICE _ 2 S FAST SWITCHING P-CHAXXEL
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bM27S55
0Qlcl047
2SJ136
IDCDO-12A
T-39-19
4E7525
J22S86
2SJ136
ID4C
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