MV840
Abstract: No abstract text available
Text: CHARACTERIZATION CURVES P.O. BOX 609 ? ROCKPORT, MAINE 04856 ? 207-236-6076 ? FAX 207-236-9558 -6- ABRUPT VARACTOR DIODES MV830 - MV840 PART NUMBER MV830 MV831 MV832 MV833 MV834 MV835 MV836 MV837 MV838 MV839 MV840 CT DIODE CAPACITANCE Vr = 4 Vdc, f = 1 MHz
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MV830
MV840
MV831
MV832
MV833
MV834
MV835
MV836
MV837
MV840
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Untitled
Abstract: No abstract text available
Text: CHARACTERIZATION CURVES P.O. BOX 609 ? ROCKPORT, MAINE 04856 ? 207-236-6076 ? FAX 207-236-9558 -6- VHF HYPERABRUPT TUNING DIODES LV2001 A - LV2002(A) PART NUMBER LV2001 LV2001A LV2002 LV2002A CT CAPACITANCE (pF) f = 1 MHz VR= 4 Vdc VR= 8 Vdc VR=20 Vdc MIN MAX MIN MAX MIN MAX
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LV2001
LV2002
LV2001A
LV2002A
LV2201
LV2202
LV2201A
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258-041
Abstract: RS 258-041 OEM24L 2N3706 AD636JH AD736JN digital power factor meter circuit diagram vr2, preset VR1 100K preset diode LMP
Text: Issued November 1993 016-207 Data Pack F Data Sheet Digital panel meter modules RS stock numbers 258-041, 313-479 backlit version These complete digital panel meters will measure and display up to ±199.9mV directly with an accuracy of ±1.0%. The small size and ultra-low power consumption, with their liquid crystal display make these
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diode fr 207
Abstract: 5SDD0135Z0400 5sdd0135z0200 0135Z0400 0135Z0200
Text: 5SDD 0135Z0400 5SDD 0135Z0400 Housingless Welding Diode Properties § High forward current capability § Low forward and reverse recovery losses Applications § Welding equipment § High current application up to 2000 Hz Key Parameters = 400 V RRM = 13 526
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0135Z0400
0135Z0400
0135Z0200
1768/138a,
DS/207/06a
Mar-11
Mar-11
diode fr 207
5SDD0135Z0400
5sdd0135z0200
0135Z0200
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0135Z0400
Abstract: diode fr 207
Text: 5SDD 0135Z0400 5SDD 0135Z0400 Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications Welding equipment High current application up to 2 kHz Key Parameters = 400 V RRM
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0135Z0400
1768/138a,
DS/207/06b
Mar-13
0135Z04n
Mar-13
0135Z0400
diode fr 207
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A14F diode
Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.
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MURS220T3
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
A14F diode
DIODE marking ES2D
V352
DC "Transient Voltage Suppressor"
diode A14A
rg3j 005
SR1002
0010C
357D-01
1N2069
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equivalent components of diode 1N5399
Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045WT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
equivalent components of diode 1N5399
diode ses5001
6A10 BL diode
equivalent for fr302 diode
equivalent components of diode her104
fe8b diode
FE8D
gi756 diode
A14F diode
MUR420 diode
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mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and
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MBRB1045
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
mur1650
T4 SOD-123 1N4004
MR2510
1N2069
SES5001
mur420 equivalent
CT PR1504
equivalent for fr302 diode
mur 460 switch
diode A14A surface mount
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FE16B
Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —
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MBRP60035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
FE16B
mbr3045pt transistor
FR102 SOD-123
1N4007 sod-123
BYV43-45
BYV19-45
MUR1660CT equivalent
MUR460 BL
FEP16DT 0032
mur420 equivalent
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stpr16
Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •
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MURB1620CT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
stpr16
MUR480E
340L-02
PK MUR 460
BV 202 0158
1N541
AK SOT23
STPS2045
SS33 SMB
A14F diode
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MR2835S equivalent
Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected
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MBR6045PT
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MR2835S equivalent
A14F diode
1n5404 diode
FE16A
MUR860 equivalent
MUR1620CT
MUR420 diode
usd745c equivalent
MBRD360
PR1502
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201KD20
Abstract: Varistors 201kd20
Text: UL1449 SUPER LOW CLAMPING VOLTAGE HYPERFIX HIGH CURRENT TRANSIENT VOLTAGE SUPPRESSOR DIODES AND MOV (METAL OXIDE VARISTORS) Description ¾ UL1449-231 HYPERFIX AND UL1449-201KD20 MOV Series of high current transient suppressors have been specially designed for use in
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UL1449
UL1449-231
UL1449-201KD20
201KD20
Varistors 201kd20
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PK MUR 460
Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360
Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
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MBR340
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
PK MUR 460
pk mur460
PK MUR460 1110
gi756 diode
carrier 30bq015
USD1120
0525 Transient Voltage Suppressors
diode A14A surface
SS14 SOD123
MBRD360
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRD1035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
1n5822 trr
A14F diode
FR105 diode
MR850
diode A14A
BYV27 200 TAP
LT2A02
MBR3100 0630
1N4007 sod-123
SES50
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Untitled
Abstract: No abstract text available
Text: EPSON P F 207-05 SCI7660C/M DC-DC Converter •9 5 % Typical Power Efficiency •Voltage doubler •Voltage Conversion(Positive<-^Negative) • DESCRIPTION The SCI7660C/M CMOS DC-DC Converter features high operational performance with low power dissipation.
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SCI7660C/M
SCI7660C/M
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Untitled
Abstract: No abstract text available
Text: s e MIKRD n SKliP 432 GB 120 - 207 CTV Absolute Maximum Ratings Symbol | Conditions11 Values Units 1200 900 400 - 40 . + 150 3000 5 400 800 4300 93 V V A -c V A A A kA2s IGBT & Inverse Diode V ces Vcc 91 lc v> Visol 4 > If If m If s m f t Diode) Operating DC link voltage
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B7-36
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electromatic VOLTAGE LEVEL RELAY SM 125 220
Abstract: electromatic s system sv 115 230 electromatic RELAY SM 115 220 electromatic s system st 125 115 electromatic denmark sc 185 220 electromatic s system sb 165 electromatic s system SA 105 220 electromatic s system electromatic s system sm 105 220 ST 125 220 electromatic
Text: *I •»p»' • SYSTEM ELECTRONIC CONTROL- AND MONITORING MODULES û û f lc in o n if llk i S - SYSTEM SA B C 207 220 SUPPLY 2 2 0 V AC COMBI * 15s ■ RANGE SELECTOR 50 35^^6 5 riMfe rtELAY ON Delay on operate SA Interval timer & Delay on release SB Recycler & Interval timer
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inc12
electromatic VOLTAGE LEVEL RELAY SM 125 220
electromatic s system sv 115 230
electromatic RELAY SM 115 220
electromatic s system st 125 115
electromatic denmark sc 185 220
electromatic s system sb 165
electromatic s system SA 105 220
electromatic s system
electromatic s system sm 105 220
ST 125 220 electromatic
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ha12159
Abstract: C114U HVR17 KR106 HVR hitachi ha1215 DYNAS
Text: ADE-207-060 HA12159 FM IF System for Use with the Dynas System Preliminary Rev. 0 Mar. 1992 HITACHI The HA12159 is an FM IF IC that incorporates a n ew te c h n iq u e th a t r a d ic a lly im p ro v e s th e sensitivity and selectivity o f FM receivers. With
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ADE-207-060
HA12159
HA12159,
HA12159.
C114U
HVR17
KR106
HVR hitachi
ha1215
DYNAS
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Untitled
Abstract: No abstract text available
Text: 2SK1414 207 7 U H U l t r a h i g h V o l t a g e S e r ie s V DSs = 1 5 0 0 V N Channel Power M OSFET £4230 F eatures • Low ON resistance, low input capacitance, very high-speed switching. • High reliability (Adoption of HVP process). A bsolute M axim um R atings at Ta = 25°C
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2SK1414
10/iS,
10//S
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TIS25
Abstract: 2N5045 TI TIS25 2N5047 jfet idss 10 ma vp -3 jfet idss 10 vp -6 3N208 T01A TIS27 TIS26
Text: s^ T e x a s In s t r u m e n t s Dual MOS, P-channel R A T IN G S TYPE B VG SSF C H A R A C T E R IS T IC S PTO T W IG S S F VGS V '< 3N 207 — 25 0 .6 -4 3N 208 -3 0 0 .6 —1 n A • pA V G S T H ) — 25 —3 —6 —3 —6 — 15 niin. m ax. m in.
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3N207
3N208
3N208
TIS25*
TIS26*
TIS27*
2N5045+
2N5047Â
2N5545*
TIS25
2N5045
TI TIS25
2N5047
jfet idss 10 ma vp -3
jfet idss 10 vp -6
T01A
TIS27
TIS26
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Knox Semiconductor
Abstract: zener K270 K300 K120 K150 K180 K210 K240 K270 K330
Text: K n o x S e m ic o n d u c t o r , I n c A unique manufacturing process allows Knox Semiconductor to supply a range o f Very Low Voltage Diodes having the lowest reverse leakage currents and low impedance at currents specified at 10 mA and below. These devices
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QQ0Q24Q
DO-35
Knox Semiconductor
zener K270
K300
K120
K150
K180
K210
K240
K270
K330
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F 207 diode
Abstract: No abstract text available
Text: K n o x S e m ic o n d u c t o r , I n c . SILICON HYPERABRUPT TUNING DIODES The KSV1400 Series o f hyperabrupt varactors offer high capacitance ratios with linear tuning between 2 and 8 volts. The units are available over a broad range o f junction capacitances, satisfying a large number o f broadband applications thru the VHF frequency
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KSV1400
KSV1401
KSV1412
OT-23
F-19500,
F 207 diode
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F 207 diode
Abstract: SV1412
Text: K n o x S e m ic o n d u c t o r , I n c SILICON HYPERABRUPT TUNING DIODES The KSV1400 Series of hyperabrupt varactors offer high capacitance ratios with linear tuning between 2 and 8 volts. The units are available over a broad range o f junction capacitances, satisfying a large number of broadband applications thru the VHF frequency
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KSV1400
KSV1401
SV1412
20rse
OT-23
MIL-PRF-19500,
F 207 diode
SV1412
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SMD 236 DIODE
Abstract: No abstract text available
Text: K n o x S e m ic o n d u c t o r , I n c SILICON HYPERABRUPT TUNING DIODES The SMV1400 Series o f hyperabrupt varactors offer high capacitance ratios with linear tuning between 2 and 8 volts. The units are available over a broad range junction capacitances, satisfying a large number of broadband applications thru the
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SMV1400
OT-23
OD-323
SMV1402
SMV1412
SMV1403*
SMV1404
SMV1405*
SMV1406
SMD 236 DIODE
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