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    EUDYNA HIGH POWER Search Results

    EUDYNA HIGH POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    EUDYNA HIGH POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EMC21L1004GN

    Abstract: EUDYNA 26841 2110 - 2170mhz power module
    Text: Eudyna GaN-HEMT 10W Preliminary EMC21L1004GN High Voltage - High Power GaN-HEMT Power Amplifier Module FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 28.5dB typ. at Pout=22dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・Proven Reliability


    Original     		PDF EMC21L1004GN 22dBm 2170MHz EMC21L1004GN EUDYNA 26841 2110 - 2170mhz power module

    EGN26A180IV

    Abstract: Eudyna Devices EGN26A180
    Text: Eudyna GaN-HEMT 180W Preliminary ES/EGN26A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 14.0dB(typ.) @ f=2.6GHz ・Proven Reliability


    Original     		PDF ES/EGN26A180IV EGN26A180IV Eudyna Devices EGN26A180

    GaN amplifier

    Abstract: EGN35A180IV
    Text: Eudyna GaN-HEMT 180W Preliminary ES/EGN35A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ P3dB ・High Efficiency: 50%(typ.) @ P3dB ・Linear Gain : 12.0dB(typ.) @ f=3.5GHz ・Proven Reliability


    Original     		PDF ES/EGN35A180IV GaN amplifier EGN35A180IV

    EGN045MK

    Abstract: No abstract text available
    Text: Eudyna GaN-HEMT 45W Preliminary EGN045MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 47.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 12dB(typ.) @ f=2200MHz ・Broad Frequency Range : 800 to 2200MHz


    Original     		PDF EGN045MK 2200MHz EGN045MK

    EGN010MK

    Abstract: 6 ghz amplifier 10w
    Text: Eudyna GaN-HEMT 10W Preliminary EGN010MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 41.0dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 15dB(typ.) @ f=3500MHz ・Broad Frequency Range : 800 to 3700MHz


    Original     		PDF EGN010MK 3500MHz 3700MHz EGN010MK 6 ghz amplifier 10w

    27 31 GHz HPA

    Abstract: EGN21A090IV hpa L-band Paladin-15 digital predistortion dpd 2carrier WCDMA egn21a090
    Text: Eudyna GaN-HEMT 90W Preliminary EGN21A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=42dBm(Avg.) ・High Efficiency: 35%(typ.) at Pout=42dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz


    Original     		PDF EGN21A090IV 42dBm 2200MHz EGN21A090IV 27 31 GHz HPA hpa L-band Paladin-15 digital predistortion dpd 2carrier WCDMA egn21a090

    EGN090MK

    Abstract: 679-10 dsa0044095
    Text: Eudyna GaN-HEMT 90W Preliminary HS/EGN090MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 51.0dBm typ. @ P3dB ・High Efficiency: 65%(typ.) @ P3dB ・Linear Gain : 18dB(typ.) @ f=900MHz ・Proven Reliability


    Original     		PDF HS/EGN090MK 900MHz EGN090MK 679-10 dsa0044095

    EGN26A090IV

    Abstract: EUDYNA EGN26A090
    Text: Eudyna GaN-HEMT 90W Preliminary ES/EGN26A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 14.0dB(typ.) @ f=2.6GHz ・Proven Reliability


    Original     		PDF ES/EGN26A090IV EGN26A090IV EUDYNA EGN26A090

    GaN amplifier

    Abstract: EUDYNA
    Text: Eudyna GaN-HEMT 30W Preliminary ES/EGN26A030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 15.0dB(typ.) @ f=2.6GHz ・Proven Reliability


    Original     		PDF ES/EGN26A030MK GaN amplifier EUDYNA

    hpa L-band

    Abstract: EGN21A180IV
    Text: Eudyna GaN-HEMT 180W Preliminary EGN21A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=45dBm(Avg.) ・High Efficiency: 32%(typ.) at Pout=45dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz


    Original     		PDF EGN21A180IV 45dBm 2200MHz EGN21A180IV Symb004 hpa L-band

    Untitled

    Abstract: No abstract text available
    Text: Eudyna GaN-HEMT 30W Preliminary ES/EGN35A030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 13.0dB(typ.) @ f=3.5GHz ・Proven Reliability


    Original     		PDF ES/EGN35A030MK VDS-16

    Untitled

    Abstract: No abstract text available
    Text: Eudyna GaN-HEMT 90W Preliminary ES/EGN35A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.0dBm typ. @ P3dB ・High Efficiency: 50%(typ.) @ P3dB ・Linear Gain : 12.0dB(typ.) @ f=3.5GHz ・Proven Reliability


    Original     		PDF ES/EGN35A090IV

    EGN030MK

    Abstract: Eudyna EGN030MK High Power GaN-HEMT EUDYNA
    Text: Eudyna GaN-HEMT 30W Preliminary ES/EGN030MK High Voltage - High Power GaN-HEMT FEATURES •High Voltage Operation : VDS=50V •High Power : 46.5dBm typ. @ P3dB •High Efficiency: 60%(typ.) @ P3dB •Linear Gain : 12dB(typ.) @ f=2700MHz •Broad Frequency Range : 800 to 2800MHz


    Original     		PDF ES/EGN030MK 2700MHz 2800MHz EGN030MK Eudyna EGN030MK High Power GaN-HEMT EUDYNA

    EGN030MK

    Abstract: Eudyna EGN030MK High Power GaN-HEMT
    Text: Eudyna GaN-HEMT 30W Preliminary EGN030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 12dB(typ.) @ f=2700MHz ・Broad Frequency Range : 800 to 2800MHz


    Original     		PDF EGN030MK 2700MHz 2800MHz EGN030MK Eudyna EGN030MK High Power GaN-HEMT

    EGN010MK

    Abstract: No abstract text available
    Text: Eudyna GaN-HEMT 10W Preliminary ES/EGN010MK High Voltage - High Power GaN-HEMT FEATURES •High Voltage Operation : VDS=50V •High Power : 41.0dBm typ. @ P3dB •High Efficiency: 60%(typ.) @ P3dB •Linear Gain : 13dB(typ.) @ f=3500MHz •Broad Frequency Range : 800 to 3700MHz


    Original     		PDF ES/EGN010MK 3500MHz 3700MHz EGN010MK

    Eudyna Devices

    Abstract: VIP 22 A FB113 ECM-A0
    Text: ES/EMY1401VI Preliminary Data Sheet Rev1.2 July,2005 ES/EMY1401VI 11.3 Gb/s LN Modulator Driver IC 1. Features 1 2) 3) 4) 5) 6) Operation up to 11.3 Gb/s Internal Input 50 ohm Termination Output Voltage Swing: 5.0V 50ohm Load) Power Supply Voltage : -5.20V


    Original     		PDF ES/EMY1401VI ES/EMY1401VI 50ohm 16-pin ECM-A00-197 Eudyna Devices VIP 22 A FB113 ECM-A0

    Eudyna Devices

    Abstract: EMM5206LP microwave sensor RO4003C k band oscillator 2329500 JESD22-A114-C EUDYNA Eudyna high power Canton AS 100 SC
    Text: EMM5206LP K Band Oscillator MMIC FEATURES ・ High Output Power : Pout =5 dBm @ Vdd = 4 V typ. ・ Low Power Consumption : Idd = 20 mA @ Vdd = 4 V (typ.) ・ Low Phase Noise : n = -100 dBc/Hz @ 100 kHz offset, fosc = 24 GHz ・ Low Spurious Level : RJ2nd < -40 dBc


    Original     		PDF EMM5206LP EMM5206LP 1906B, Eudyna Devices microwave sensor RO4003C k band oscillator 2329500 JESD22-A114-C EUDYNA Eudyna high power Canton AS 100 SC

    L-Band

    Abstract: No abstract text available
    Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to


    Original     		PDF FLL120MK FLL120MK L-Band

    EUDYNA

    Abstract: No abstract text available
    Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the


    Original     		PDF FLU17XM FLU17XM EUDYNA

    FLU35XM

    Abstract: Eudyna Devices
    Text: FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm Typ. • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the


    Original     		PDF FLU35XM FLU35XM V4888 Eudyna Devices

    FLL57MK

    Abstract: No abstract text available
    Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to


    Original     		PDF FLL57MK FLL57MK

    FLL177ME

    Abstract: Eudyna Devices 0.1 j100
    Text: FLL177ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=32.5dBm Typ. High Gain: G1dB=12.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL177ME is a Power GaAs FET that is specifically designed to


    Original     		PDF FLL177ME FLL177ME Temperat4888 Eudyna Devices 0.1 j100

    FLL410IK-4C

    Abstract: ED-4701 eudyna GaAs FET Eudyna Devices power amplifiers
    Text: FLL410IK-4C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm Typ. ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=44%(Typ.) ・Broad Band: 3.4~3.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is


    Original     		PDF FLL410IK-4C FLL410IK-4C ED-4701 eudyna GaAs FET Eudyna Devices power amplifiers

    Eudyna Devices

    Abstract: Doppler Sensor K-band DOPPLER 24ghz k band oscillator doppler sensor mmic case styles EMM5206LP EUDYNA Canton AS 100 SC RM1101
    Text: EMM5206LP K Band Oscillator MMIC FEATURES ・High Output Power : Pout=5dBm @Vdd=4V typ. ・Low Power Consumption : Idd=20mA @Vdd=4V (typ.) ・Low Phase Noise : Φn=-100dBc/Hz @100KHz offset, fosc=24GHz ・Low Spurious Level : RJ2nd<-40dBc ・High Reliability, High Breakdown Voltage : Vgdo=20V, Igdo=160uA


    Original     		PDF EMM5206LP -100dBc/Hz 100KHz 24GHz -40dBc 160uA ES/EMM5206LP Eudyna Devices Doppler Sensor K-band DOPPLER 24ghz k band oscillator doppler sensor mmic case styles EMM5206LP EUDYNA Canton AS 100 SC RM1101