EMC21L1004GN
Abstract: EUDYNA 26841 2110 - 2170mhz power module
Text: Eudyna GaN-HEMT 10W Preliminary EMC21L1004GN High Voltage - High Power GaN-HEMT Power Amplifier Module FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 28.5dB typ. at Pout=22dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・Proven Reliability
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EMC21L1004GN
22dBm
2170MHz
EMC21L1004GN
EUDYNA
26841
2110 - 2170mhz power module
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EGN26A180IV
Abstract: Eudyna Devices EGN26A180
Text: Eudyna GaN-HEMT 180W Preliminary ES/EGN26A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 14.0dB(typ.) @ f=2.6GHz ・Proven Reliability
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ES/EGN26A180IV
EGN26A180IV
Eudyna Devices
EGN26A180
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GaN amplifier
Abstract: EGN35A180IV
Text: Eudyna GaN-HEMT 180W Preliminary ES/EGN35A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 53.0dBm typ. @ P3dB ・High Efficiency: 50%(typ.) @ P3dB ・Linear Gain : 12.0dB(typ.) @ f=3.5GHz ・Proven Reliability
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ES/EGN35A180IV
GaN amplifier
EGN35A180IV
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EGN045MK
Abstract: No abstract text available
Text: Eudyna GaN-HEMT 45W Preliminary EGN045MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 47.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 12dB(typ.) @ f=2200MHz ・Broad Frequency Range : 800 to 2200MHz
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EGN045MK
2200MHz
EGN045MK
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EGN010MK
Abstract: 6 ghz amplifier 10w
Text: Eudyna GaN-HEMT 10W Preliminary EGN010MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 41.0dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 15dB(typ.) @ f=3500MHz ・Broad Frequency Range : 800 to 3700MHz
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EGN010MK
3500MHz
3700MHz
EGN010MK
6 ghz amplifier 10w
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27 31 GHz HPA
Abstract: EGN21A090IV hpa L-band Paladin-15 digital predistortion dpd 2carrier WCDMA egn21a090
Text: Eudyna GaN-HEMT 90W Preliminary EGN21A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=42dBm(Avg.) ・High Efficiency: 35%(typ.) at Pout=42dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz
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EGN21A090IV
42dBm
2200MHz
EGN21A090IV
27 31 GHz HPA
hpa L-band
Paladin-15
digital predistortion dpd 2carrier WCDMA
egn21a090
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EGN090MK
Abstract: 679-10 dsa0044095
Text: Eudyna GaN-HEMT 90W Preliminary HS/EGN090MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 51.0dBm typ. @ P3dB ・High Efficiency: 65%(typ.) @ P3dB ・Linear Gain : 18dB(typ.) @ f=900MHz ・Proven Reliability
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HS/EGN090MK
900MHz
EGN090MK
679-10
dsa0044095
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EGN26A090IV
Abstract: EUDYNA EGN26A090
Text: Eudyna GaN-HEMT 90W Preliminary ES/EGN26A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 14.0dB(typ.) @ f=2.6GHz ・Proven Reliability
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ES/EGN26A090IV
EGN26A090IV
EUDYNA
EGN26A090
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GaN amplifier
Abstract: EUDYNA
Text: Eudyna GaN-HEMT 30W Preliminary ES/EGN26A030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 15.0dB(typ.) @ f=2.6GHz ・Proven Reliability
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ES/EGN26A030MK
GaN amplifier
EUDYNA
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hpa L-band
Abstract: EGN21A180IV
Text: Eudyna GaN-HEMT 180W Preliminary EGN21A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=45dBm(Avg.) ・High Efficiency: 32%(typ.) at Pout=45dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz
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EGN21A180IV
45dBm
2200MHz
EGN21A180IV
Symb004
hpa L-band
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Untitled
Abstract: No abstract text available
Text: Eudyna GaN-HEMT 30W Preliminary ES/EGN35A030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.0dBm typ. @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 13.0dB(typ.) @ f=3.5GHz ・Proven Reliability
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ES/EGN35A030MK
VDS-16
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Untitled
Abstract: No abstract text available
Text: Eudyna GaN-HEMT 90W Preliminary ES/EGN35A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.0dBm typ. @ P3dB ・High Efficiency: 50%(typ.) @ P3dB ・Linear Gain : 12.0dB(typ.) @ f=3.5GHz ・Proven Reliability
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ES/EGN35A090IV
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EGN030MK
Abstract: Eudyna EGN030MK High Power GaN-HEMT EUDYNA
Text: Eudyna GaN-HEMT 30W Preliminary ES/EGN030MK High Voltage - High Power GaN-HEMT FEATURES •High Voltage Operation : VDS=50V •High Power : 46.5dBm typ. @ P3dB •High Efficiency: 60%(typ.) @ P3dB •Linear Gain : 12dB(typ.) @ f=2700MHz •Broad Frequency Range : 800 to 2800MHz
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ES/EGN030MK
2700MHz
2800MHz
EGN030MK
Eudyna EGN030MK High Power GaN-HEMT
EUDYNA
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EGN030MK
Abstract: Eudyna EGN030MK High Power GaN-HEMT
Text: Eudyna GaN-HEMT 30W Preliminary EGN030MK High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.5dBm typ. @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 12dB(typ.) @ f=2700MHz ・Broad Frequency Range : 800 to 2800MHz
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EGN030MK
2700MHz
2800MHz
EGN030MK
Eudyna EGN030MK High Power GaN-HEMT
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EGN010MK
Abstract: No abstract text available
Text: Eudyna GaN-HEMT 10W Preliminary ES/EGN010MK High Voltage - High Power GaN-HEMT FEATURES •High Voltage Operation : VDS=50V •High Power : 41.0dBm typ. @ P3dB •High Efficiency: 60%(typ.) @ P3dB •Linear Gain : 13dB(typ.) @ f=3500MHz •Broad Frequency Range : 800 to 3700MHz
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ES/EGN010MK
3500MHz
3700MHz
EGN010MK
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Eudyna Devices
Abstract: VIP 22 A FB113 ECM-A0
Text: ES/EMY1401VI Preliminary Data Sheet Rev1.2 July,2005 ES/EMY1401VI 11.3 Gb/s LN Modulator Driver IC 1. Features 1 2) 3) 4) 5) 6) Operation up to 11.3 Gb/s Internal Input 50 ohm Termination Output Voltage Swing: 5.0V 50ohm Load) Power Supply Voltage : -5.20V
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ES/EMY1401VI
ES/EMY1401VI
50ohm
16-pin
ECM-A00-197
Eudyna Devices
VIP 22 A
FB113
ECM-A0
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Eudyna Devices
Abstract: EMM5206LP microwave sensor RO4003C k band oscillator 2329500 JESD22-A114-C EUDYNA Eudyna high power Canton AS 100 SC
Text: EMM5206LP K Band Oscillator MMIC FEATURES ・ High Output Power : Pout =5 dBm @ Vdd = 4 V typ. ・ Low Power Consumption : Idd = 20 mA @ Vdd = 4 V (typ.) ・ Low Phase Noise : n = -100 dBc/Hz @ 100 kHz offset, fosc = 24 GHz ・ Low Spurious Level : RJ2nd < -40 dBc
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EMM5206LP
EMM5206LP
1906B,
Eudyna Devices
microwave sensor
RO4003C
k band oscillator
2329500
JESD22-A114-C
EUDYNA
Eudyna high power
Canton AS 100 SC
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L-Band
Abstract: No abstract text available
Text: FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to
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FLL120MK
FLL120MK
L-Band
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EUDYNA
Abstract: No abstract text available
Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the
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FLU17XM
FLU17XM
EUDYNA
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FLU35XM
Abstract: Eudyna Devices
Text: FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm Typ. • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the
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FLU35XM
FLU35XM
V4888
Eudyna Devices
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FLL57MK
Abstract: No abstract text available
Text: FLL57MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 36.0dBm Typ. High Gain: G1dB = 11.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL57MK is a Power GaAs FET that is specifically designed to
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FLL57MK
FLL57MK
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FLL177ME
Abstract: Eudyna Devices 0.1 j100
Text: FLL177ME L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB=32.5dBm Typ. High Gain: G1dB=12.5dB (Typ.) High PAE: ηadd=46% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL177ME is a Power GaAs FET that is specifically designed to
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FLL177ME
FLL177ME
Temperat4888
Eudyna Devices
0.1 j100
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FLL410IK-4C
Abstract: ED-4701 eudyna GaAs FET Eudyna Devices power amplifiers
Text: FLL410IK-4C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm Typ. ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=44%(Typ.) ・Broad Band: 3.4~3.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is
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FLL410IK-4C
FLL410IK-4C
ED-4701
eudyna GaAs FET
Eudyna Devices power amplifiers
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Eudyna Devices
Abstract: Doppler Sensor K-band DOPPLER 24ghz k band oscillator doppler sensor mmic case styles EMM5206LP EUDYNA Canton AS 100 SC RM1101
Text: EMM5206LP K Band Oscillator MMIC FEATURES ・High Output Power : Pout=5dBm @Vdd=4V typ. ・Low Power Consumption : Idd=20mA @Vdd=4V (typ.) ・Low Phase Noise : Φn=-100dBc/Hz @100KHz offset, fosc=24GHz ・Low Spurious Level : RJ2nd<-40dBc ・High Reliability, High Breakdown Voltage : Vgdo=20V, Igdo=160uA
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EMM5206LP
-100dBc/Hz
100KHz
24GHz
-40dBc
160uA
ES/EMM5206LP
Eudyna Devices
Doppler Sensor K-band
DOPPLER 24ghz
k band oscillator
doppler sensor
mmic case styles
EMM5206LP
EUDYNA
Canton AS 100 SC
RM1101
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