NAD 140
Abstract: ED-4701 FLM5359-45F NAD C 372
Text: FLM5359-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm Typ. ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.3~5.9GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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FLM5359-45F
FLM5359-45F
NAD 140
ED-4701
NAD C 372
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Untitled
Abstract: No abstract text available
Text: FLM5359-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm Typ. ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.3~5.9GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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FLM5359-45F
FLM5359-45F
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ED-4701
Abstract: FLM5964-45F
Text: FLM5964-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=47.0dBm Typ. ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=39%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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FLM5964-45F
FLM5964-45F
ED-4701
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gm 88
Abstract: f1640 ED-4701 FLM5964-35F
Text: FLM5964-35F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.5dBm Typ. ・High Gain: G1dB=9.0dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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FLM5964-35F
FLM5964-35F
gm 88
f1640
ED-4701
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EIAJ ED-4701
Abstract: EUDYNA C-Band Eudyna Devices ED-4701 FLM5964-35F
Text: FLM5964-35F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.5dBm Typ. ・High Gain: G1dB=9.0dB(Typ.) ・High PAE: ηadd=36%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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FLM5964-35F
FLM5964-35F
EIAJ ED-4701
EUDYNA
C-Band
Eudyna Devices
ED-4701
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ELM5964-10F
Abstract: JESD22-A114
Text: ELM5964-10F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm Typ. ・High Gain: G1dB=10.0dB(Typ.) ・High PAE: hadd=39%(Typ.) ・Broad Band: 5.9～6.4GHz ・Impedance Matched Zin/Zout = 50W ・Hermetically Sealed Package DESCRIPTION
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ELM5964-10F
ELM5964-10F
1906B,
JESD22-A114
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JESD22-A114D
Abstract: FLM1213-6F
Text: FLM1213-6F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=37.5dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: hadd=27%(Typ.) ・Low IM3 =-46dBc(Typ.) @Po=26.5dBm ・Broad Band: 12.7～13.2GHz ・Impedance Matched Zin/Zout = 50W
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FLM1213-6F
-46dBc
FLM1213-6F
1906B,
JESD22-A114D
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ED-4701
Abstract: FLM5964-45F
Text: FLM5964-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=47.0dBm Typ. ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=39%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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FLM5964-45F
FLM5964-45F
ED-4701
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ELM1314-9F
Abstract: ELM1314 SCL 1058 ED-4701
Text: ELM1314-9F Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=39.5dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 13.75～14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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ELM1314-9F
ELM1314-9F
1906B,
ELM1314
SCL 1058
ED-4701
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JESD22-A114
Abstract: No abstract text available
Text: ELM7785-35F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.5dBm Typ. ・High Gain: G1dB=8.0dB(Typ.) ・High PAE: hadd=35%(Typ.) ・Broad Band: 7.7～8.5GHz ・Impedance Matched Zin/Zout = 50W ・Hermetically Sealed Package DESCRIPTION
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ELM7785-35F
ELM7785-35F
1906B,
JESD22-A114
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JESD22-A114
Abstract: eudyna 0054
Text: ELM6472-10F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=40.5dBm Typ. ・High Gain: G1dB=9.5dB(Typ.) ・High PAE: hadd=36%(Typ.) ・Broad Band: 6.4～7.2GHz ・Impedance Matched Zin/Zout = 50W ・Hermetically Sealed Package DESCRIPTION
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ELM6472-10F
ELM6472-10F
1906B,
JESD22-A114
eudyna 0054
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ELM1314-30F
Abstract: No abstract text available
Text: ELM1314-30F/001 Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44.5dBm Typ. ・High Gain: G1dB=5.5dB(Typ.) ・High PAE: ηadd=22%(Typ.) ・Broad Band: 13.75～14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package
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ELM1314-30F/001
ELM1314-30F/001
1906B,
ELM1314-30F
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elm1414-30f
Abstract: 40938
Text: ELM1414-30F/001 Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44.5dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=22%(Typ.) ・Broad Band: 14.00～14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package
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ELM1414-30F/001
ELM1414-30F/001
1906B,
elm1414-30f
40938
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ED-4701
Abstract: No abstract text available
Text: ELC407ZZ-5 C-Band Partially Internally Matched FET FEATURES ・High Output Power: P1dB=36.0dBm Typ. ・High Gain: G1dB=9.5dB(Typ.) ・High PAE: ηadd=40%(Typ.) ・Broad Band: 5.2~5.9GHz(BW=100MHz) ・Partially internally Matched ・Plastic Package for SMT applications
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ELC407ZZ-5
100MHz)
ELC407ZZ-5
1906B,
ED-4701
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FETEX-150
Abstract: biosensor Palm Vein Technology WX300 "CMOS GATE ARRAY" fuji graphene SHINKO pharma suite riken fujitsu optical module
Text: Corporate Data History of Fujitsu ● Business 1935 ～ Developments ● Jun 20, 1935 Fuji Tsushinki Manufacturing Corporation, the company that later becomes Fujitsu Limited, is born as an offshoot of the communications division of Fuji Electric. The new company is
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