XP151A13A0MR
Abstract: No abstract text available
Text: XP151A13A0MR-G ETR1119_003 Power MOSFET •GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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XP151A13A0MR-G
ETR1119
XP151A13A0MR-G
OT-23
XP151A13A0MR
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XP151A13A0MR
Abstract: N-channel Power MOSFET with low on state resistance
Text: XP151A13A0MR-G ETR1119_002 Power MOSFET •GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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Original
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PDF
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XP151A13A0MR-G
ETR1119
XP151A13A0MR-G
OT-23
XP151A13A0MR
N-channel Power MOSFET with low on state resistance
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XP151A13A0MR
Abstract: No abstract text available
Text: XP151A13A0MR ETR1119_001 Power MOSFET •GENERAL DESCRIPTION The XP151A13A0MR is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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Original
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PDF
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XP151A13A0MR
ETR1119
XP151A13A0MR
OT-23
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Untitled
Abstract: No abstract text available
Text: XP151A13A0MR-G ETR1119_003 Power MOSFET GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
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Original
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PDF
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XP151A13A0MR-G
ETR1119
XP151A13A0MR-G
OT-23
OT-23
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XP151A13A0MR
Abstract: Power MOSFET N-Channel sot-23
Text: ◆N-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.1Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-23 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP151A13A0MR is an N-channel Power MOSFET with low
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OT-23
XP151A13A0MR
OT-23
XP151A13A0MR
Power MOSFET N-Channel sot-23
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