MR2A08A
Abstract: MARK W1 TSOP zd 409 MR2A08AYS35 MR2A08AMA35 MR2A08
Text: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
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Original
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MR2A08A
20-years
MR2A08A
304-bit
EST00170
MR2A08A,
MARK W1 TSOP
zd 409
MR2A08AYS35
MR2A08AMA35
MR2A08
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PDF
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Untitled
Abstract: No abstract text available
Text: MR2A08A 512K x 8 MRAM Memory FEATURES • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
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Original
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MR2A08A
AEC-Q100
MR2A08A
EST00170
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PDF
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AEC-Q100
Abstract: MR2A08A MR2A08AYS35
Text: MR2A08A FEATURES 512K x 8 MRAM Memory • Fast 35ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
|
Original
|
MR2A08A
AEC-Q100
MR2A08A
304-bit
EST00170
MR2A08AYS35
|
PDF
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