3.2 v zener diode
Abstract: 10v ZENER DIODE 20 kV ZENER DIODE DIODE ZENER X
Text: WT-Z106P-AU4-14 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-AU4-14 2. Structure:
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WT-Z106P-AU4-14
150mm)
20-Jul-07
3.2 v zener diode
10v ZENER DIODE
20 kV ZENER DIODE
DIODE ZENER X
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zener diode
Abstract: WT-Z108N
Text: WT-Z108N Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z108N
137um)
zener diode
WT-Z108N
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Untitled
Abstract: No abstract text available
Text: WT-Z108P Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z108P
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Untitled
Abstract: No abstract text available
Text: WT-Z108N-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-4 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z108N-4
137um)
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3.2 v zener diode
Abstract: No abstract text available
Text: WT-Z108P-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-AU 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z108P-AU
3.2 v zener diode
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um 54 diode
Abstract: zener diode chip 3.2 v zener diode
Text: WT-Z108N-AU Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z108N-AU 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z108N-AU
137um)
um 54 diode
zener diode chip
3.2 v zener diode
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zener diode chip
Abstract: WT-Z108P-AU4
Text: WT-Z108P-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-AU4 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z108P-AU4
zener diode chip
WT-Z108P-AU4
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WT-Z108P
Abstract: No abstract text available
Text: WT-Z108P-4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z108P-4 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z108P-4
WT-Z108P
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3.2 v zener diode
Abstract: 105um DIODE ZENER X
Text: WT-Z106P-4-12 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-12 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z106P-4-12
150mm)
05-Dec-06
3.2 v zener diode
105um
DIODE ZENER X
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z106
Abstract: DIODE ZENER X
Text: WT-Z106P-4-14 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-14 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z106P-4-14
150mm)
25-Jan-07
z106
DIODE ZENER X
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3.2 v zener diode
Abstract: diode zener protection ZENER 5V diode Zener LED zener diode WT-Z105P-AU4 DIODE ZENER X
Text: WT-Z105P-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chip Device NO:WT-Z105P-AU4 2. Structure: 2-1 Planar type: P/N Diode
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WT-Z105P-AU4
MIL-STD883
3.2 v zener diode
diode zener protection
ZENER 5V diode
Zener LED
zener diode
WT-Z105P-AU4
DIODE ZENER X
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std883
Abstract: Zener diode DIODE ZENER X
Text: WT-Z106N-AU4 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to N-Type silicon Zener diode chip Device NO:WT-Z106N-AU4 2. Structure: 2-1 Planar type: N/P Diode
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WT-Z106N-AU4
MIL-STD883
24-Nov-05
std883
Zener diode
DIODE ZENER X
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YPBL-Z103T
Abstract: No abstract text available
Text: POWER Module 1 YPBL-Z103T Module Spec • PICTURE ■ FEATURES Built-in Standalone battery capacity monitoring and reporting Single-line communication support Over-charge/discharge voltage and current protection Short-circuit protection ESD Protected : IEC 61000-4-2 Level 4
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YPBL-Z103T
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YPBL-Z101A
Abstract: No abstract text available
Text: POWER Module 1 YPBL-Z101A Module Spec • PICTURE ■ FEATURES Built-in High-Accuracy detector Over-charge/discharge voltage and current protection Short-circuit protection Low on-state internal resistance : TPY. 50 mΩ 3 V, 1 A ESD Protected : IEC 61000-4-2(Level 4)
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YPBL-Z101A
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SNN01Z10
Abstract: No abstract text available
Text: SN NN01Z Z10Q Q Logic Le evel N-Ch Po ower MOSFE ET L Logic Le evel Ga ate Drive App plicatio on Fe eatures • Logic levell gate drive e • Max. RDS ONN = 0.24Ω at VGS = 10V, ID = 0.5A • Low RDS(on) provides hiigher efficie ency • ESD proteccted: 2000V
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NN01Z
OT-223
SNN01Z
SNN01Z10
SNN01
1Z10Q
24-NOV-11
KSD-T5A011-000
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zener 5A6 ON
Abstract: zener 5A6 5a6 dual zener diode 5A6 zener zener 9A1 5a6 zener diode 5A6 marking code Z10V marking code 5A6 sot 26 6A8 SOT-23
Text: MMBZ5V6A Series Dual Common Anode Zener TVS Features: *Allows Either Two Separate Unidirectional Configuations or a Single Bidirectional Configuations. *Low Leakage Current. *24-40 Watts Peak Power Protection. *Excellent Clamping Capability. *ESD Rating of Class N exceeding 16KV per the Human Body Model.
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OT-23
008grams
OT-23
zener 5A6 ON
zener 5A6
5a6 dual zener diode
5A6 zener
zener 9A1
5a6 zener diode
5A6 marking code
Z10V
marking code 5A6 sot 26
6A8 SOT-23
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J-STD-020B
Abstract: PD55003L
Text: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION
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PD55003L
PD55003L
J-STD-020B
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PD55003L
Abstract: ST 0721 702 TRANSISTOR smd J-STD-020B PD55003L-E SMD electrolytic capacitor ferride bead
Text: PD55003L-E RF POWER TRANSISTOR The LdmoST Plastic FAMILY General features • Excellent thermal stability ■ Common source configuration ■ POUT =3W mith 17dB gain@500MHz/12.5V ■ New leadless plastic package ■ Esd protection ■ Supplied in tape & reel of 3K units
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PD55003L-E
500MHz/12
2002/95/EC
PD55003L-E
PD5500L-E
PD55003L
ST 0721
702 TRANSISTOR smd
J-STD-020B
SMD electrolytic capacitor
ferride bead
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J-STD-020B
Abstract: PD55003L
Text: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION
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PD55003L
PD55003L
J-STD-020B
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Zener diode DW
Abstract: zener diode z10 TPIC2202 TPIC2322L SLIS032 tpic6a595 sd TPIC1321L TPIC2301 TPIC3322L 088-M
Text: TPIC1321L 3-HALF H-BRIDGE GATE-PROTECTED LOGIC-LEVEL POWER DMOS ARRAY SLIS042 – NOVEMBER 1994 • • • • • • Low rDS on . . . 0.35 Ω Typ Voltage Output . . . 60 V Input Protection Circuitry . . . 18 V Pulsed Current . . . 4 A Per Channel Extended ESD Capability . . . 4000 V
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TPIC1321L
SLIS042
TPIC1321L
Zener diode DW
zener diode z10
TPIC2202
TPIC2322L
SLIS032
tpic6a595 sd
TPIC2301
TPIC3322L
088-M
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10 35L
Abstract: picture in picture chip YPBL-Z103A
Text: POWER Module 1 YPBL-Z103A Module Spec • PICTURE ■ FEATURES Built-in High-Precision monitor with Alerts Data-acquisition, information-storage, and safety monitoring Remaining capacity estimation Single-line communication support Over-charge/discharge voltage and current protection
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YPBL-Z103A
10 35L
picture in picture chip
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XZ1002-BD-000V
Abstract: xz1002-bd mmic core chip Z1002-BD XZ100 1521e Mimix Broadband m11
Text: 8.5-11.0 GHz GaAs MMIC Core Chip Z1002-BD March 2009 - Rev 11-Mar-09 Features General Description The XZ1002-BD is a highly integrated dual path transmit/receive 3 port core chip. It is designed for applications operating within the 8.5 to 11.0 GHz range. The core consists of integrated transmit/receive
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11-Mar-09
Z1002-BD
XZ1002-BD
MIL-STD-883
XZ1002-BD-000V
XZ1002-BD-000V
xz1002-bd
mmic core chip
XZ100
1521e
Mimix Broadband m11
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600w class d circuit diagram schematics
Abstract: TM 1628 IC SCHEMATICS DIAGRAM P6KE200A equivalent 30F126 AP6KE300CA diode P6KE 100 A TISPA79R241 SMBJ40A/CA-TR ZP1400 1SMB5.0CAT3
Text: ASD and Discrete Products PROTECTION Devices and IPADs™ Improving the Immunity of your System Designer’s Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL
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SGPROTECT/1001
600w class d circuit diagram schematics
TM 1628 IC SCHEMATICS DIAGRAM
P6KE200A equivalent
30F126
AP6KE300CA
diode P6KE 100 A
TISPA79R241
SMBJ40A/CA-TR
ZP1400
1SMB5.0CAT3
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Untitled
Abstract: No abstract text available
Text: STEWART CONNECTOR SYSTEMS INC. , R R 2, BOX 2020 GIEN BOCK, PENNSYLVANIA 17327 "NOT PRESENTLY TOOLED’ PART NO.: SS-668804S-A-N F-1-AB EMI-RFI ONE PIECE SHIELDED, ESD GROUNDED 4 PORT PCB HARMONICA JACK PAC " - N r NON-FLANGE ’ - r SIDE SOLDER TAILS ARE ON .180 [4.57] CENTERS
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SS-668804S-A-N
p-25J
CT660020X3
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