16GB Nand flash dual channel
Abstract: hynix nand flash samsung 8Gb nand flash Hynix 64Gb Nand flash micron DDR3 SODIMM address mapping edge connector nand flash HYNIX MLC dms-59 WD3RE04GX818 hynix nand flash 2gb wd2ue01Gx818
Text: ourl ocat i ons FLASH EMBEDDED PRODUCTS DRAM MODULES Wi nt ecI ndust r i esBr anches USA LosAngel es,CA Nor cr oss,Geor gi a Pi scat away,New Jer sey Eur ope Br aunschwei g,Ger many Asi a Tai pei ,Tai wan Kowl oon,HongKong Shenzhen,Chi na Wi nt ecI ndust r
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EP20K1000C
Abstract: EP20K200C EP20K400C EP20K600C EPC16 FA12 ep20k apex board
Text: APEX 20KC Programmable Logic Device February 2002 ver. 2.0 Features. Data Sheet • ■ Programmable logic device PLD manufactured using a 0.15-µm alllayer copper-metal fabrication process – 25 to 35% faster design performance than APEXTM 20KE devices
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BLV91
Abstract: ferroxcube 1988 mda406 MDA401
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in
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BLV91/SL
OT-172D)
BLV91
ferroxcube 1988
mda406
MDA401
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Untitled
Abstract: No abstract text available
Text: Introdução PROJETOR MULTIMÍDIA Referência Rápida MODELO XG-MB67X-L Configuração MANUAL DE OPERAÇÃO Conexões Operações Básicas Recursos úteis Apêndice XG-MB67XL_PO_CD_cover 7 06.9.20, 8:58 AM IMPORTANTE • Para ajudá-lo a notificar a perda ou roubo
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XG-MB67X-L
XG-MB67XL
RS-232C
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ci 555
Abstract: tl 555 c BR3868S PG3668S SBR3401 SBR3431 MPR3878S spr340 PY3668S TL 555
Text: Stanley LEI $22 -SiQ T1 3 mm LED • High brightness • Side illuminations • Low current • Flangeless types • Wide angle • Flat top Round Shape o3 (T-l) Type LED Luminous Intensity Shape ilB - 6 02 13 1 a i Z 1 i ?' 3, -! Part No. ESBR/SBR3401 SPR3401
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ESBR/SBR3401
SPR3401
SAR3401
ESAA/SAA3401
ESAY/SAY3401
ESPY/SPY3401
ESBG/SBG3401
SBR3407
SPR3407
SAA3407
ci 555
tl 555 c
BR3868S
PG3668S
SBR3401
SBR3431
MPR3878S
spr340
PY3668S
TL 555
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SL 100 NPN Transistor
Abstract: blt91 International Power Sources ferroxcube wideband hf choke Philips 4312 020 TRANSISTOR SL 100 of transistor sl 100 sl 100 transistor
Text: PHILIPS INTERNATIONAL bSE D B 7110fl5Li DOLEb71 0 4^1 • PHIN BLT91/SL _ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in handheld radio stations in the 900 MHz communications band.
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00L2b71
BLT91/SL
OT-172D)
7110fl2b
D0bSb77
SL 100 NPN Transistor
blt91
International Power Sources
ferroxcube wideband hf choke
Philips 4312 020
TRANSISTOR SL 100
of transistor sl 100
sl 100 transistor
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amplifier blw96
Abstract: BLW96 HF power amplifier PR37 RESISTOR BLW96 philips blw96 PHILIPS 4312 amplifier PR37 RESISTOR pr37 PHILIPS capacitors 0.1 mf A03414
Text: PHILIPS INTERNATIONAL LSE D C3 711DÛ5L QDbBMlE 33b BLW96 PHIN H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated high power industrial and m ilitary transmitting equipm ent in the h.f. and v.h.f. band. The transistor presents
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BLW96
7110fl2b
DDb3453
amplifier blw96
BLW96 HF power amplifier
PR37 RESISTOR
BLW96
philips blw96
PHILIPS 4312 amplifier
PR37
RESISTOR pr37
PHILIPS capacitors 0.1 mf
A03414
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B303D
Abstract: TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor
Text: b5E » H 71106Eb D0b3DEÛ 07T « P H I N BLV91/SL PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.
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BLV91/SL
OT-172D)
711005b
DGb3034
BLV91/SL
B303D
TT 2222 npn
transistor tt 2222
transistor npn 2xi
transistor sot t06
FTC 960
trimmer PT 10
TT 2222
ka band transistor
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43120203664
Abstract: BLW83 PHILIPS 4312 amplifier 431202036640 choke BY206 philips carbon film resistor
Text: bSE V m 7110&Eb □□b332*ì 75^ BiPHIN BLW83 _PHILIPS INTERNATIONAL_ ^ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear
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BLW83
711002b
00b3337
BLW83
43120203664
PHILIPS 4312 amplifier
431202036640 choke
BY206
philips carbon film resistor
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EC900
Abstract: BLW99 2 TMT 15-4
Text: PHILIPS IN TE RNATIONAL bSE T> 711002b m D0b3441 J 137 PHIN BLW99 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB and B operated high-power mobile transmitting equipment in the h.f. band. The transistors are resistance-stabilized and are guaranteed to withstand severe load mismatch conditions.
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OT-121.
BLW99
711GflSb
EC900
BLW99
2 TMT 15-4
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philips blx14
Abstract: BLX14
Text: N AMER PHILIPS/DISCRETE bTE D • bbS3T31 DQ2TSbl T52 I BLX14 H .F./V .H .F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, AB and B operated transmitting equipment in the h.f. and v.h.f. band. • rated fo r 50 W P.E.P. at 1,6 MHz to 28 MHz
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bbS3T31
BLX14
philips blx14
BLX14
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE • UVU DbE D V I ■ W bt,53T31 0013b5fi 1 ^ ^ '» NORTH/AMPEREX/DISCRETE OLE D BLV97 _ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.
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53T31
0013b5fi
BLV97
OT-171
BLV97
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE » bbS3R31 □DE'llDl “JS4 I IAPX B L V 8 0 /2 8 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in base stations in the v.h.f. mobile radio band. Features: • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile;
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bbS3R31
bbS3R31
Q02RltlR
7Z88750
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D • bbS3R31 0Q2flfl2M ^30 I IAPX bLUcJO/12 A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 M H z communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile
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bbS3R31
bLUcJO/12
BLU30/12
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Untitled
Abstract: No abstract text available
Text: I N AUER PHILIPS/DISCRETE bb53*131 □ 02*1732 T13 BLY92C b*!E D IAPX A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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BLY92C
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D • bbSB'iai QQEfiTfiS IEE B LV33 _ J \ _ V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear v.h.f. amplifiers for television
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BLV33
BLV33
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE ]> b b s a ^ l □□2883'! 3bl I IAPX BLU45/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features
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BLU45/12
OT-119
BLU45/12
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b 'lE • D bbS3T31 D D E ^ D ll L APX T IE BLV36 VHF LINEAR PUSH-PULL POWER TRANSISTOR Two NPN silicon planar epitaxial transistor sections in one envelope to be used as a push-pull amplifier. This device is primarily intended for use in linear VHF television transmitters and transposers vision or
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bbS3T31
BLV36
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Untitled
Abstract: No abstract text available
Text: • bbS3^3i o o a ^ A i f ao? h a p x BLW29 N AnER p h i l i p s / j i s c r e t e blE I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power
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BLW29
BFQ42
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bb53^31 DQ28761 715 • IAPX BLT92/SL bTE J> UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation.
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DQ28761
BLT92/SL
OT122D)
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4312 020 36640
Abstract: ferroxcube wideband hf choke
Text: N AMER PHILIPS/DISCRETE bbS3T31 0 0 2 W 0 SS3 I IAPX BLX39 b^E 3> H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is
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bbS3T31
BLX39
juF/10
/zF/35
4312 020 36640
ferroxcube wideband hf choke
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Untitled
Abstract: No abstract text available
Text: b'lE D • N AUER PHILIPS/DISCRETE hh53*131 DQSflTS? 2bfi APX BLV30 ; v V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear v.h.f. amplifiers for television transmitters and transposers. Diffused emitter ballasting resistors and the application of gold sandwich
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BLV30
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Untitled
Abstract: No abstract text available
Text: •I bb53^31 002flT33 624 N AHER PHILIPS/DISCRETE IAPX b lE BLV20 D V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
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002flT33
BLV20
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Untitled
Abstract: No abstract text available
Text: N APIER PHILIPS/DISCRETE b=lE D • bbS3T31 003=1136 T4b APX BLV92 _J V U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band.
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bbS3T31
BLV92
OT-171)
DDER14S
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