20A60V
Abstract: No abstract text available
Text: ESAC83M-006R 20A (60V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain
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Original
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ESAC83M-006R
20A60V
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PDF
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ESAC83M-004R
Abstract: No abstract text available
Text: ESAC83M-004R 20A (40V / 20A ) Outline drawings, mm 15.5 ±0.3 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 20 Min 21.5 5.5 ±0.2 2.3 ±0.2 2.1±0.3 5.45 ±0.2 5.5 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 3.5 ±0.2 0.6 +0.2 1. Gate 2. Drain
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Original
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ESAC83M-004R
500ns,
ESAC83M-004R
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PDF
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SCHOTTKY 20A 40V
Abstract: ESAC83-004 SC-65
Text: ESAC83-004 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 Features JEDEC Low VF EIAJ SC-65 Super high speed switching
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Original
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ESAC83-004
SC-65
500ns,
SCHOTTKY 20A 40V
ESAC83-004
SC-65
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PDF
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SCHOTTKY 20A 40V
Abstract: No abstract text available
Text: ESAC83-004 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 Features JEDEC Low VF EIAJ SC-65 Super high speed switching
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Original
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ESAC83-004
SC-65
500ns,
SCHOTTKY 20A 40V
|
PDF
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SCHOTTKY 20A 40V
Abstract: No abstract text available
Text: ESAC83M-004R 20A (40V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain
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Original
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ESAC83M-004R
SCHOTTKY 20A 40V
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PDF
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SCHOTTKY 20A 40V
Abstract: No abstract text available
Text: ESAC83M-004 20A (40V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain
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Original
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ESAC83M-004
SCHOTTKY 20A 40V
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PDF
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esac83
Abstract: No abstract text available
Text: http://www.fujisemi.com ESAC83-004R FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Conditions Ratings Units 48 V 40 V Repetitive peak surge reverse voltage VRSM Repetitive peak reverse voltage
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Original
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ESAC83-004R
500ns,
esac83
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PDF
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004r
Abstract: SCHOTTKY 20A 40V ESAC83M-004R esaC83
Text: ESAC83M-004R 20A (40V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain
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Original
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ESAC83M-004R
500ns
004r
SCHOTTKY 20A 40V
ESAC83M-004R
esaC83
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PDF
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ESAC83M-004
Abstract: No abstract text available
Text: ESAC83M-004 20A (40V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain
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Original
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ESAC83M-004
ESAC83M-004
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PDF
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ESAC83-004
Abstract: "Power Diode" 20A
Text: ESAC83-004 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 Features JEDEC Low VF EIAJ SC-65 Super high speed switching
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Original
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ESAC83-004
SC-65
500ns,
ESAC83-004
"Power Diode" 20A
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PDF
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Untitled
Abstract: No abstract text available
Text: ESAC83M-006 20A (60V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain
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Original
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ESAC83M-006
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PDF
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Untitled
Abstract: No abstract text available
Text: http://www.fujisemi.com ESAC83M-006RR FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings at Ta=25˚C unless otherwise specified. Item Symbols Repetitive peak reverse voltage VRRM Isolating voltage Viso Average output current
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Original
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ESAC83M-006RR
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PDF
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ESAC83M-006R
Abstract: HIS 06 N
Text: ESAC83M-006R 20A (60V / 20A ) Outline drawings, mm 15.5 ±0.3 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 20 Min 21.5 5.5 ±0.2 2.3 ±0.2 2.1±0.3 5.45 ±0.2 5.5 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 3.5 ±0.2 0.6 +0.2 1. Gate 2. Drain
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Original
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ESAC83M-006R
ESAC83M-006R
HIS 06 N
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PDF
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ESAC83-004
Abstract: SC-65
Text: ESAC83-004 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 Features JEDEC Low VF EIAJ SC-65 Super high speed switching
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Original
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ESAC83-004
SC-65
500ns,
ESAC83-004
SC-65
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PDF
|
|
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Untitled
Abstract: No abstract text available
Text: ESAC83-004 20A (40V / 20A ) Outline drawings, mm SCHOTTKY BARRIER DIODE 15.5 Max. 4.5±0.2 Ø3.2±0.1 5.0±0.1 13.0 10.0 7.2±0.1 1.5 19.5±0.2 2.0 2 3 2.2 1.6 14.5±0.2 1 3.0±0.2 15±0.2 1.6 1.1 0.5 1.5 5.45 5.45 Features JEDEC Low VF EIAJ SC-65 Super high speed switching
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Original
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ESAC83-004
SC-65
500ns,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ESAC83M-006 20A (60V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain
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Original
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ESAC83M-006
|
PDF
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ESAC83M-006
Abstract: esaC83
Text: ESAC83M-006 20A (60V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain
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Original
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ESAC83M-006
ESAC83M-006
esaC83
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PDF
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ESAC83M-006R
Abstract: No abstract text available
Text: ESAC83M-006R 20A (60V / 20A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain
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Original
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ESAC83M-006R
ESAC83M-006R
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PDF
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rcj60
Abstract: A-494 ESAC83-004 H125 SC-65 esac83 A494
Text: ESAC83-004 2oa SCHOTTKY BARRIER DIODE • t t J t : Features • 1&VF Low VF Super high speed switching. •7u-*-«HR=«»flmit Connection Diagram High reliability by planer design. w\ I A p p lic a tio n s c3 High speed power switching. CD cD M a x im u m Ratings and C h a ra c te ris tics
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OCR Scan
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ESAC83-004
SC-65
500ns
rcj60
A-494
H125
SC-65
esac83
A494
|
PDF
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A-494
Abstract: ESAC83-004 H125 SC-65 ESAC83 Collmer SC
Text: ESAC83-004 2oa SCHOTTKY BARRIER DIODE • t t J t : Features • 1&VF Low VF Super high speed switching. •7u-*-«HR=«»flmit Connection Diagram High reliability by planer design. w\ I Applications c3 High speed power switching. CD cD Maximum Ratings and Characteristics
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OCR Scan
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ESAC83-004
SC-65
500ns
A-494
H125
SC-65
ESAC83
Collmer SC
|
PDF
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Untitled
Abstract: No abstract text available
Text: ESAC83M-006 2 oa SCHOTTKY BARRIER DIODE : Features -f • i & w i t *'• Insulated p ac ka g e b y fully m o l d in g . • ®VK L o w Vk 3£c Connection Diagram S u p e r h ig h speed s w itc h in g . H ig h reliability by pla n e r d e s ig n , ■ E 3 i£ : Applications
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OCR Scan
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ESAC83M-006
500ns
195t/R89
|
PDF
|
ESAC83M-006
Abstract: No abstract text available
Text: ESAC83M -006 2 oai '> 3 -yh+— -f=t—K SCHOTTKY BARRIER DIODE : Features • 3i Ufa it s e it^ t i t t y v -f Insulated package by fully m o ld in g . • 1&Vh Low V k • Connection Diagram i= * i' Super high speed sw itching. • ~ f l '—t *B1£
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OCR Scan
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500ns
ESAC83M
ESAC83M-006
|
PDF
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ca3103
Abstract: No abstract text available
Text: ESAC83-004 2 oa *±/j SCHOTTKY BARRIER DIODE • # J c : Features • <&vF Low V F • xe-W JEflttjfei' Super high speed switching. • -7\s— t - m tt*t ¿5*111114 n m & m Connection Diagram High reliability by planer design. |4 - W\ ■ f f liil: Applications
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OCR Scan
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ESAC83-004
500ns
I95t/R89)
ca3103
|
PDF
|
ESAC83M-006
Abstract: esac83
Text: ESAC83M -006 2 oai '> 3 -yh+— -f=t—K SCHOTTKY BARRIER DIODE : Features • 3i Ufa it s e it^ t i t t y v -f Insulated package by fully m o ld in g . • 1&Vh Low V k • i= * i' C o n n e c tio n D ia g ra m Super high speed sw itching. • ~ f l '—t
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OCR Scan
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500ns
ESAC83M
ESAC83M-006
esac83
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PDF
|
