ERW02 Search Results

diode 10a 600v

Abstract: power Diode 200V 10A 600v "Power Diode" ERW02-060 600v 10A diode
Contextual Info: ERW02-060 10A/600V Fast Recovery Diode for IGBT Outline Drawings Equivalent circuit Units mm K A Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C) Item Repetitive Reverse Voltage Repetitive peak surge current Average rectiffied forward current

ERW02-060

Contextual Info: SPEC I F I CAT I O SILICON DIODE DEVICE NAME TYPE NAf£ : E RWO 2- 0 6 0 SPEC. No. . DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN NAM E APPROVED Fuji Electric C artel z CHECKED 1/6 Y 0257-R-004a Rati ngs and c h a r a c t e r i s t i c s of Fuji

LT 220 diode

Contextual Info: DISCRETE IGBT 600 VO LT, D IS C R E T E IGBT • 5-50 Amps Device Vces !' Type Volts 60B 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 1MB30-060 1MBH50-060 600 600 600 600 600 V g e =15V lc Cont. Pc Per&BT VcE sal Max. Amps 5 10 15 20 30 50 Watts Volts 3.0 3.0

mp2a5100

Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Contextual Info: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors

igbt 200v 20a

Abstract: tc122 25 1MBH65D-090A igbt 200V 5A TC122 1MBH60D-090A TC122-25 1mbh ERW03-060 ERW04-060
Contextual Info: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 電子レンジ用モールドタイプ Molded package types, such as microwave ovens 形 式 Device type 1MBH60D-090A 1MBH65D-090A VCES VGES Volts 900 900

Contextual Info: SPEC DEVICE NAME : TYPE NAME 1 F 1CAT 10 N SILICON DIODE E R W O SPEC. No. : DATE : > 2 - 0 6 0 Fu j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric CaJL.td. DRAWN -A CHECKED o •XL o 3:

Contextual Info: SP EC I F I C A T I ON SILICON DIODE DEVICE NAME TYPE NAME ERWO 2 - 0 > 60 SPEC. No. . DATE F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change without notice. DAT É DRAWN NAME APPROVED Fuji E lectric C a n te i — á jx CHECKED

Contextual Info: SPEC DEVICE NAME : TYPE NAME 1 F 1CAT 10 N SILICON DIODE E R W O SPEC. No. : DATE : > 2 - 0 6 0 Fu j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric CaJL.td. DRAWN -A CHECKED o •XL o 3:

Contextual Info: S P E C DEVICE NAME I F : TYPE NAME I C A T 1 ON SILICON DIODE . E R W O 2 - 0 6 0 SPEC. No. DATE : F u j i E l e c t r i c Co,. Ltd. This Specification is subject to change without notice. DATE NAME APPROVED DRAWN Fuji Electric CaJLtd. - Ú CHECKED 1/6

tc122 25

Abstract: 1MBH75D-060S 1MBH65D-090A TC1278 1MBH50D060 TO-3PL 1MB15D-060 1MBH60D 1MBC05-060 1MBC10-060
Contextual Info: パワーデバイス / Power Devices IGBT • IGBTモールドタイプ Molded Package Type IGBTs 600Vクラス 産業用モールドタイプ 600 volts class molded package types 形 式 Device type IGBT VCES VGES 1MBG05D-060 1MBC05-060 1MBC05D-060

2MBI450U4E-120

Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
Contextual Info: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！