Untitled
Abstract: No abstract text available
Text: MX25V8005 8M-BIT [x 1] 2.5V CMOS SERIAL FLASH FEATURES GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 8,388,608 x 1 bit structure • 256 Equal Sectors with 4K byte each - Any Sector can be erased individually • 16 Equal Blocks with 64K byte each
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MX25V8005
100mA
50MHz
256-byte
120ms
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Untitled
Abstract: No abstract text available
Text: Advance Information CAT25C256 256K-Bit SPI Serial CMOS E2PROM FEATURES • 100,000 Program/Erase Cycles ■ 5 MHz SPI Compatible ■ 100 Year Data Retention ■ 1.8 to 6.0 Volt Operation ■ Self-Timed Write Cycle ■ Hardware and Software Protection ■ 8-Pin DIP/SOIC and 20-Pin TSSOP
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CAT25C256
256K-Bit
20-Pin
64-Byte
CAT25C256
32Kx8
25C256
25C256:
2000/Reel
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N25Q256
Abstract: No abstract text available
Text: 512Mb, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25QAx3G12x0x, N25QAx3GF8x0x, N25QAx3GSFx0x Features • • • • • • • • • • • • • • • • • • Write protection
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512Mb,
N25QAx3G12x0x,
N25QAx3GF8x0x,
N25QAx3GSFx0x
256Mb
09005aef84752721
N25Q256
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AT49BV802A
Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3405E
AT49BV802A
AT49BV802AT
AT49BV802AT-70CI
at49bv802a-70tu
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AT49BV320D
Abstract: AT49BV320DT SA70 AT49BV
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • • – Sixty-three 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3581D
AT49BV320D
AT49BV320DT
SA70
AT49BV
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48C20
Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout
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3608C
48C20
SA125
AT49BV640DT-70CU
AT49BV640D
AT49BV640DT
AT49BV640D-70CU
SWITCH SA125
278000 eprom
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S 3590A
Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout
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M29W320DT
Abstract: M29W320D M29W320DB TFBGA48
Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns
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M29W320DT
M29W320DB
TSOP48
TFBGA63
TFBGA48
M29W320DT
M29W320D
M29W320DB
TFBGA48
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X28LV010
Abstract: No abstract text available
Text: X28LV010 1M 128K x 8 Bit 3.3 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION • Access Time: 70, 90, 120, 150ns • Simple Byte and Page Write —Single 3.3V±10% supply —No external high voltages or VPP control circuits —Self-timed • no erase before write
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X28LV010
150ns
X28LV010
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BSC 68H
Abstract: SCK 055 TSOP 28 SPI memory Package flash AT45DB161 AT45DB161B AT45DB161-CC AT45DB161-RC PA10 PA11 AT45DB161-TC
Text: Features • • • • • • • • • • • • • • • 100% Compatible to AT45DB161 Single 2.7V - 3.6V Supply Serial Interface Architecture Page Program Operation – Single Cycle Reprogram Erase and Program – 4096 Pages (528 Bytes/Page) Main Memory
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AT45DB161
528-byte
2224B
03/01/xM
BSC 68H
SCK 055
TSOP 28 SPI memory Package flash
AT45DB161
AT45DB161B
AT45DB161-CC
AT45DB161-RC
PA10
PA11
AT45DB161-TC
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flash hamming ecc
Abstract: 29F0408RP radiation solid state recorder
Text: SPACE ELECTRONICS INC. FLASH MEMORY S PACE PRODUCTS 29F0408RP DESCRIPTION: • Single 5.0V supply • Organization: - Memory cell array: 4M + 128k bit x 8bit - Data register: (512 + 16)bit x 8bit • Automatic program and erase - Page program: (512 + 16)Byte
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29F0408RP
528-Byte
00Rev1
flash hamming ecc
29F0408RP
radiation solid state recorder
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a29040al-70
Abstract: A29040A-55 A29040A A29040A-70 A29040AL A29040AL-55 A29040AV-55 IN3064
Text: A29040A Series 512K X 8 Bit CMOS 5.0 Volt-only, Preliminary Uniform Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current
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A29040A
a29040al-70
A29040A-55
A29040A-70
A29040AL
A29040AL-55
A29040AV-55
IN3064
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am29f400bb
Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
Text: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements
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Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
am29f400bb v
am29f400 known good
AM29F400B7
20185
AM29F400BT
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A22 SMD CODE
Abstract: A22 SMD MARKING CODE AM30LV0064DJ40
Text: Am30LV0064D 64 Megabit 8 M x 8-Bit CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read, erase, and program operations — Separate VCCQ for 5 volt I/O tolerance
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Am30LV0064D
A22 SMD CODE
A22 SMD MARKING CODE
AM30LV0064DJ40
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amic a290021t-70
Abstract: A290021T-70 A290021TL-70 A29002 A290021 A290021L IN3064
Text: A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - 55/70/90/120/150 max. n Current: - 20 mA typical active read current - 30 mA typical program/erase current
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A29002/A290021
amic a290021t-70
A290021T-70
A290021TL-70
A29002
A290021
A290021L
IN3064
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M29W008A
Abstract: M29W008AB M29W008AT
Text: M29W008AT M29W008AB 8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 80ns ■ PROGRAMMING TIME: 10µs typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte
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M29W008AT
M29W008AB
TSOP40
M29W008A
M29W008AB
M29W008AT
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AM28F020
Abstract: No abstract text available
Text: FINAL Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current
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Am28F020
32-pin
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IC 19PIN
Abstract: SSOP-P32 BA7745FS 368p
Text: Video ICs VCR Hi-Fi audio signal REC / PB amplifier with flying-erase oscillator BA7745FS The BA7745FS has the recording and playback amplifiers required for Hi-Fi VCR signal processing, and also contains a flying-erase oscillator. The recording system uses a constant-current amplifeir with AGC to eliminate the need
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BA7745FS
BA7745FS
SSOP-P32
IC 19PIN
SSOP-P32
368p
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25x16
Abstract: ST24C16 ST24W16 ST25C16 ST25W16
Text: ST24C16, ST25C16 ST24W16, ST25W16 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24x16 versions – 2.5V to 5.5V for ST25x16 versions
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ST24C16,
ST25C16
ST24W16,
ST25W16
ST24x16
ST25x16
ST24W16
ST24C16
ST24/25C16
25x16
ST24C16
ST25C16
ST25W16
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SA6954
Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to
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S29WSxxxN
S29WS256N,
S29WS128N,
S29WS064N
16-Bit)
SA6954
S29WS064N
S29WS128N
S29WS256N
WS128N
FFC00
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AT45DB161
Abstract: AT45DB161B AT45DCB002 PA10 PA11 PA11-PA0 atmel 504
Text: Features • Single 2.5V - 3.6V or 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible • Page Program Operation • • • • • • • • • – Single Cycle Reprogram (Erase and Program) – 4096 Pages (528 Bytes/Page) Main Memory
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528-byte
AT45DB161
2224D
12/01/xM
AT45DB161
AT45DB161B
AT45DCB002
PA10
PA11
PA11-PA0
atmel 504
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Untitled
Abstract: No abstract text available
Text: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte
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TMS28F040
304-BIT
SMJS040-DECEMBER
A0-A18
32-pin
40-pin
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00F1H
Abstract: No abstract text available
Text: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles
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MX29F1
100/120/150ns
-100mA
100mA
100ns
00F1H
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IN6AG
Abstract: 28F020 intel 28F020
Text: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp
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28F020
2048K
32-Pin
32-LEAD
P28F020-70
N28F020-70
P28F020-90
IN6AG
intel 28F020
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