EQUIVALENT TRANSISTOR RF Search Results

EQUIVALENT TRANSISTOR RF Result Highlights (5)

Part	Manufacturer	Description
TMP89FS60AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E
TMP89FS63AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65
TMP89FS60BFG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002
TMP89FS63BUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002
TMP89FS62AUG	Toshiba Electronic Devices & Storage Corporation	8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A

EQUIVALENT TRANSISTOR RF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NTE359 Abstract: 8-32N Text: NTE359 Silicon NPN Transistor RF & Microwave Transistor Description: RF Power Transistor 20W − 175 MHz Features: Specified 28 Volt, 175MHz Characteristics Output Power = 20 Watts Minimum Gain = 8.2dB Efficiency = 60% Characterized from 125 to 175MHz Includes Series Equivalent Impedances	Original	NTE359 175MHz 175MHz 8-32-NC-3A NTE359 8-32N	PDF
2SC2812 Abstract: 2SK1740 FC21 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 Text: Ordering number : ENN7021 FC21 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET FC21 High-Frequency Amplifier, AM tuner RF Amplifier Applications • Package Dimensions The FC21 contains both a 2SK1740 equivalent chip and a 2SC2812 equivalent chip in the CP package,	Original	ENN7021 2SK1740 2SC2812 FC21 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965	PDF
Untitled Abstract: No abstract text available Text: Vishay Telefunken Physical Explanations AQL Acceptable Quality Level see chapter “Quality Data” B, b Base, base terminal C, c Collector, collector terminal The transistor equivalent circuit (see chapter “Transistor Equivalent Circuit”) shows the different	Original		PDF
AM/Tuner Abstract: 2SK937 2SC2812 FC21 2SK93-7 Text: FC21 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET High-Frequency Amp. AM tuner RF Amp. Applications TENTATIVE Features •Composed of 2 chips, one being equivalent the 2SK937 and the other the 2SC2812 in the conventional CP package,	Original	2SK937 2SC2812 971205TM2fXHD AM/Tuner FC21 2SK93-7	PDF
marking 579 sot363 Abstract: No abstract text available Text: Ordering number : ENA1125A FH102A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz NPN Dual MCP6 Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one package	Original	ENA1125A FH102A FH102A 2SC5226A, A1125-8/8 marking 579 sot363	PDF
Untitled Abstract: No abstract text available Text: Ordering number : ENA1126A FH105A RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6 http://onsemi.com Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package	Original	ENA1126A FH105A FH105A 2SC5245A, A1126-8/8	PDF
Philips high frequency bipolar transistor with Ft Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,	Original	MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout	PDF
motorola rf Power Transistor Abstract: transistor equivalent table chart 2N6256 AN282A 2N3948 transistor equivalent table AN548A 2N5849 motorola RF Transistor Selection 2N5849 Text: Order this document by AN282A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN282A SYSTEMIZING RF POWER AMPLIFIER DESIGN Prepared by: Roy Hejhall INTRODUCTION Two of the most popular RF small signal design techniques are: 1. the use of two port parameters, and	Original	AN282A/D AN282A mid-1960 motorola rf Power Transistor transistor equivalent table chart 2N6256 AN282A 2N3948 transistor equivalent table AN548A 2N5849 motorola RF Transistor Selection 2N5849	PDF
transistor equivalent table chart Abstract: 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941 Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN282A/D AN282A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Systemizing RF Power Amplifier Design	Original	AN282A/D AN282A mid-1960 transistor equivalent table chart 2N6256 2N5941-2 motorola rf Power Transistor 2N5849 AN282A LARGE SIGNAL IMPEDANCES transistor motorola application note an-548A 2N3948 2N5941	PDF
Untitled Abstract: No abstract text available Text: T em ic Semiconductors Symbols and Terminology AQL Acceptable Quality Level see chapter “Quality Data” B. b Base, base terminal C, c Collector, collector terminal Capacitances The transistor equivalent circuit (see chapter “Transistor Equivalent Circuit”) shows the different capacitances in	OCR Scan	13-Mar-97	PDF
Untitled Abstract: No abstract text available Text: PNP SILICON TRANSISTOR BN1L4M DESCRIPTION The BN1 L4M is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 4 .2 MAX. (0.165 MAX.) Bias resistors built-in type PNP transistor equivalent circuit. 2 .2 MAX.	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: Ordering number : ENN7021 \| TR : NPN Epitaxial Planar Silicon Transistor _FET : N-Channel Silicon Junction FET FC21 IS A /tY O l High-Frequency Amplifier, AM tuner RF Amplifier Applications Package Dimensions Features * The FC21 contains both a 2SK1740 equivalent chip	OCR Scan	ENN7021 2SK1740 2SC2812	PDF
equivalent transistor 2sk Abstract: 2sc 1740 TRANSISTOR equivalent sanyo tuner npn C 1740 sanyo 2sc 1740 transistor equivalent transistor TO 2sk transistor 2sk Text: Ordering number: ENN7021 \| TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET _FC21 SANYO/ High-Frequency Amplifier, AM tuner RF Amplifier Applications Package Dimensions Features • T h e F C 2 l contains both a 2SK 1740 equivalent chip	OCR Scan	ENN7021 equivalent transistor 2sk 2sc 1740 TRANSISTOR equivalent sanyo tuner npn C 1740 sanyo 2sc 1740 transistor equivalent transistor TO 2sk transistor 2sk	PDF
2sc2240 equivalent Abstract: 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2120 equivalent 2sc2458 equivalent 2Sc1959 equivalent 2SC1627 equivalent 2sc2878 equivalent 2SA1091 equivalent Text: Surface Mount Devices 1 Super-Mini Transistors (SOT-23MOD.) Electrical Characteristics (Ta=25’ C) Application Type No. le (mA) PC (mW) TJ rc ) Mark Complementary Remarks (TO-92 Mini-transistor) Equivalent TO-92 Type No. 2SA1162 Low-frequency oompllflcation	OCR Scan	OT-23MOD. 2SC2712 2SA1162 2SC2713 2SA1163 2SC2859 2SA1182 2SC3138 2SA1255 2SC3265 2sc2240 equivalent 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2120 equivalent 2sc2458 equivalent 2Sc1959 equivalent 2SC1627 equivalent 2sc2878 equivalent 2SA1091 equivalent	PDF

toshiba tc110g Abstract: 74LS82 74ls150 74LS514 toshiba tc140g 74ls150 pin configuration 74LS273 SC11C1 diode sr45 74LS194 internal circuit diagram Text: SIEMENS AKTIEN6ESELLSCHAF 47E » • BS3SbOS 0037405 7 » S I E G General Description Our Sea-of-Gates concept is based on a highperformance CMOS technology, in either 1.5 micron or 1.0 micron transistor gate length. This is equivalent to 1.1 or 0.8 micron effective	OCR Scan		PDF
J300 Siliconix Abstract: 10112N 2n Siliconix FET U257 dual FET 2N4393 2N4416 2N5912 J300 U232 Siliconix Application Note Text: z> B Siliconix g APPLICATION NO TE FETs for Video Amplifiers INTRODUCTION For this analysis the gate source leakage resistance has been ignored due to its high value. Redrawing the input equivalent circuit as a simple parallel RC combination results in The field-effect transistor lends itself well to video amplifier	OCR Scan		PDF
STA455C Abstract: STA405A SMA6012 SLA6022 SLA*6022 SMA4031 sla1008 sta421a SLA4031 SLA6030 Text: ANKEN DISCRETES TRANSISTOR ARRAYS Type No. VcEO lc lcp lif¡ Equivalent (V) (A) min Diagram Circuit VCEO IcOc3) N (V) (A) min Type No. STA301A 60+10 4(8) 1000 1 SMA4020 -60 -4 2000 30 STA302A -50 -4 (-8) 1000 2 SMA4021 -60 -3(-6) 2000 31 STA303A 100 4(8)	OCR Scan	STA301A STA302A STA303A STA304A STA305A STA308A STA311A STA312A STA321A STA322A STA455C STA405A SMA6012 SLA6022 SLA*6022 SMA4031 sla1008 sta421a SLA4031 SLA6030	PDF
equivalent 2SC2655 Abstract: 2SA949 equivalent toshiba audio power amplifier 2Sc2229 equivalent 2SC2873 equivalent 2SA1213 equivalent 2SC2655/Y/c2655 equivalent 2SC2655 equivalent transistor marking M sot89 toshiba transistor marking SA Text: TOSHIBA {DI SC RE TE /O PT O} Sb D eT \| TCnTESO 0Q07104 0 / — 9097250 TOSHIBA — ^ D I S C R E T E / O P T O _ ~ /' 5 61 07 I 0 4 "" " D 2 f - ¿/ Chip Device For Hybrid IC (2) Power Mini Transistor (Equivalent to SOT-89) Type Application Electrical Characteristic (Ta = 25°C)	OCR Scan	0Q07104 OT-89) T092MOD 2SC2880 2SA949 2SA1200 2SA1201 2SA1202 2SC2882 equivalent 2SC2655 2SA949 equivalent toshiba audio power amplifier 2Sc2229 equivalent 2SC2873 equivalent 2SA1213 equivalent 2SC2655/Y/c2655 equivalent 2SC2655 equivalent transistor marking M sot89 toshiba transistor marking SA	PDF
Untitled Abstract: No abstract text available Text: B Transistor Arrays SD Type No. 2 Ri R 20 4 ' f 1 S D A 01 Voltage Ratings <V) Equivalent Circuit t r 6 ' „-T . 3* r * ; r r Vce(Mi' and other Functions/Appiications (V) P N P D a rlin g to n tra n s is to r a rra y i '• 13)14 hFE and other 8 1 „* 1*	OCR Scan	200Utyp	PDF
TRANSISTOR 1F Abstract: transistor k 2541 2SC3775 2SC3925 ELMA Text: SA\YO F No.2541 2 S C 3 9 2 5 NPN Epitaxial Planar Type Silicon Transistor , o Di f f e r e n t i a l Am p > Ver y Hig h -S p e e d S w it c h in g ,/IfrRucATioNS I Features . The 2SC3925 is formed vitb two chips, being equivalent to the 2SC3775, placed in one package.	OCR Scan	2SC3925 2SC3775, 2SC3925 200HHi 200MHz TRANSISTOR 1F transistor k 2541 2SC3775 ELMA	PDF
2N6985 Abstract: lg system ic transistor ac 125 equivalent Text: MOTOROLA SC XSTRS/R F b'iE » b3b?25M D1DD120 703 MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 400 MHz frequency range.	OCR Scan	b3b72SM 2N6985 G1GD123 2N6985 lg system ic transistor ac 125 equivalent	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Pow er Transistor D esigned prim arily for w ideband la rg e -sig n a l output and driver am plifier stages in the 30 to 500 MHz frequency range. • • Specified 28 Volt, 400 MHz Characteristics —	OCR Scan	MRF392	PDF
equivalent transistor rf "30 mhz" Abstract: MRF392 NPN TRANSISTOR Z4 lx125 motorola rf Power Transistor mrf392 motorola Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —	OCR Scan	MRF392 equivalent transistor rf "30 mhz" NPN TRANSISTOR Z4 lx125 motorola rf Power Transistor mrf392 motorola	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor D esigned prim arily for w ideband la rg e-sig nal output and driver am plifier stages in the 30 to 500 M H z frequency range. • Specified 28 Volt, 400 MHz Characteristics —	OCR Scan	MRF392	PDF

EQUIVALENT TRANSISTOR RF Search Results

EQUIVALENT TRANSISTOR RF Result Highlights (5)

EQUIVALENT TRANSISTOR RF Datasheets Context Search

NTE359

2SC2812

Untitled

AM/Tuner

marking 579 sot363

Untitled

Philips high frequency bipolar transistor with Ft

motorola rf Power Transistor

transistor equivalent table chart

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Untitled

Untitled

equivalent transistor 2sk

2sc2240 equivalent

toshiba tc110g

J300 Siliconix

STA455C

equivalent 2SC2655

Untitled

TRANSISTOR 1F

2N6985

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equivalent transistor rf "30 mhz"

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