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    EQUIVALENT TRANSISTOR AN 243 Search Results

    EQUIVALENT TRANSISTOR AN 243 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    EQUIVALENT TRANSISTOR AN 243 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    laser diode spice modeling

    Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
    Text: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these


    Original     		42E-13 04E-1 53E-13 5E-12 87E-2 1E-14) INA-12 900MHz 900E6) laser diode spice modeling laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136 PDF

    vhf linear amplifier mrf245

    Abstract: amplifier mrf245 mrf247 OMRON lzn2 MRF240 2N6084 equivalent MRF245 DATA SPEC NF2-12 LZN2-UA-DC12 mrf245
    Text: Order this document by AN791/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN791 A SIMPLIFIED APPROACH TO VHF POWER AMPLIFIER DESIGN Prepared by: Helge O. Granberg RF Circuits Engineering This note discusses the design of 35-W and 75-W VHF linear amplifiers. The construction technique


    Original     		AN791/D AN791 vhf linear amplifier mrf245 amplifier mrf245 mrf247 OMRON lzn2 MRF240 2N6084 equivalent MRF245 DATA SPEC NF2-12 LZN2-UA-DC12 mrf245 PDF

    ED26 diode

    Abstract: mos Turn-off Thyristor MOS Controlled Thyristor AN8602 ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Harris Semiconductor No. AN8602.1 Harris Power MOSFETs May 1992 The IGBTs - A New High Conductance MOS-Gated Device Author: J.P. Russell, A.M. Goodman, L.A. Goodman and J.M. Neilson Abstract ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		AN8602 ED26 diode mos Turn-off Thyristor MOS Controlled Thyristor ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS PDF

    ED26 diode

    Abstract: 8602 RECTIFIER AN8602 mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to that of an n-channel power MOSFET but employs an n-epitaxial layer grown on a p+ substrate. In operation, the


    Original     		AN8602 ED26 diode 8602 RECTIFIER mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981 PDF

    SCHEMATIC WITH IGBTS

    Abstract: AN8603 thyristor rca MOS-Gated Thyristor Abstract schematic power transistor
    Text: Harris Semiconductor No. AN8603.2 Harris Power MOSFETs December 1993 Improved IGBTs with Fast Switching Speed And High-Current Capability Authors: A.M. Goodman, J.R. Russell, L.A. Goodman, C.J. Nuese and J.M. Neilson Abstract Conventional vertical power MOSFETs are limited at high


    Original     		AN8603 ED-26, SCHEMATIC WITH IGBTS thyristor rca MOS-Gated Thyristor Abstract schematic power transistor PDF

    MOS Controlled Thyristor

    Abstract: GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract /Title AN75 4 Subect The GBTs A ew i h onucance OSated evice Autho ) Keyords Fairhild orpoation, emionuctor, Cretor () DOCI FO dfark Page- May 1992 AN-7504 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		AN-7504 MOS Controlled Thyristor GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode PDF

    applications of mos controlled thyristor

    Abstract: MOS Controlled Thyristor Semiconductor Power AN-7504 mosfet controlled thyristor mos Turn-off Thyristor P channel 600v 20a IGBT ED26 diode Pelly 10A fast Gate Turn-off Thyristor transistor Ia 15 rca
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract Title N86 bt he BTs w gh ncce OSted vice utho eyrds terrpoon, minctor, er OCI O frk geode May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		PDF

    AN8603

    Abstract: MOS-Gated Thyristor
    Text: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN8603.2 Abstract Conventional vertical power MOSFETs are limited at high voltages >500V by the appreciable resistance of their epitaxial drain region. In a new MOS-gate controlled device


    Original     		AN8603 MOS-Gated Thyristor PDF

    AN-7505

    Abstract: fairchild low power transistor 1977
    Text: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN-7505 Abstract Title N86 bt mpro d BTs h t itch eed d ghrt paty utho eyrds terrpoon, minctor, er ) OCI O frk Conventional vertical power MOSFETs are limited at high


    Original     		AN-7505 AN-7505 fairchild low power transistor 1977 PDF

    Power Semiconductor Applications Philips Semiconductors

    Abstract: "Power Semiconductor Applications" Philips philips schematic induction cookers stepper motor philips ID 27 connections wire diode S4 68a hef4752v application note HEF4752 single phase ac motor speed control HEF4752V hef4752v Three-Phase Inverters philips igbt induction cooker
    Text: Motor Control Power Semiconductor Applications Philips Semiconductors CHAPTER 3 Motor Control 3.1 AC Motor Control 3.2 DC Motor Control 3.3 Stepper Motor Control 241 Motor Control Power Semiconductor Applications Philips Semiconductors AC Motor Control 243


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    AN-7505

    Abstract: AN75 circuit diagram of thyristor controlled rectifier SCHEMATIC WITH IGBTS MOS-Gated Thyristor semiconductor power devices
    Text: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN-7505 Abstract /Title AN75 5 Subect Impro ed GBTs ith ast witch ng peed nd ighurent apaility) Autho ) Keyords Interil orpoation, emionuctor, Cretor () DOCI


    Original     		AN-7505 AN-7505 AN75 circuit diagram of thyristor controlled rectifier SCHEMATIC WITH IGBTS MOS-Gated Thyristor semiconductor power devices PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    15J 6KV

    Abstract: speed control of induction motor by using scr "The Magic of I2t" SCR C106D equivalent circuit slip ring motor characteristics curve VARISTOR 275 LA 20A 5 hp DC motor speed control using scr transformer with 20kVA rating 20kVA transformer scr C106D
    Text: APPLICATION NOTES Littelfuse Varistor Design Examples APPLICATIONS: 3000 1500 It is desired to prevent failure of the power supply shown in Figure 1b to be used on residential 117VAC lines. A representative transient generator is to be used for testing as shown in Figure 1a.


    Original     		117VAC e-10-5 500V/80 -40oC V251BA60 EC638 15J 6KV speed control of induction motor by using scr "The Magic of I2t" SCR C106D equivalent circuit slip ring motor characteristics curve VARISTOR 275 LA 20A 5 hp DC motor speed control using scr transformer with 20kVA rating 20kVA transformer scr C106D PDF

    welding transformer SCR

    Abstract: SCR C106D equivalent circuit scr tic 106 200mh inductor slip ring motor characteristics curve 5 hp DC motor speed control using scr scr C106 Fuse class CC 400V crowbar SCR C106D terminal and characteristic scr tic 106 ac
    Text: Littelfuse Varistor Design Examples Application Note [ /Title AN97 72 /Subject (Harris Varistor Design Examples) /Autho r () /Keywords (TVS, Transient Suppression, Protection, ESD, IEC, EMC, Electromagne tic Compatibility, Harris Sup- This note is meant to be a guide for the user in selecting a


    Original     		117VAC welding transformer SCR SCR C106D equivalent circuit scr tic 106 200mh inductor slip ring motor characteristics curve 5 hp DC motor speed control using scr scr C106 Fuse class CC 400V crowbar SCR C106D terminal and characteristic scr tic 106 ac PDF

    slip ring motor characteristics curve

    Abstract: welding transformer SCR AN9772 harris varistor UL1499 "The Magic of I2t" 20kVA transformer SCR 400V 1000A HIIAA harris varistors
    Text: Harris Semiconductor No. AN9772 Harris Suppression Products January 1998 Harris Varistor Design Examples This note is meant to be a guide for the user in selecting a varistor by describing common application examples, and illustrating the solution process to determine the appropriate


    Original     		AN9772 500V/80 V130LA20A, 1-800-4-HARRIS slip ring motor characteristics curve welding transformer SCR AN9772 harris varistor UL1499 "The Magic of I2t" 20kVA transformer SCR 400V 1000A HIIAA harris varistors PDF

    BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS

    Abstract: tesec manual microsemi 1-E 380 igbt thermal characterization and simulation using ansys water cooled Chiller AN569 "silicon image" dvi handheld schottky transistor spice BR1487 Motorola transistor schottky model spice
    Text: Thermal Modeling and Management of Discrete Surface Mount Packages Yes, you do have the right materials! Thank you for ordering ON Semiconductor product information. This data book, while it has the ON Semiconductor cover, still references Motorola throughout its contents. As we transition away from our old identity as the Motorola


    Original     		PDF

    FX-EEPROM-4

    Abstract: F2-20gf1 Melsec* fx-64mr TRIAC 8315 Mitsubishi FX48M FX-80MR FX-48MR YL 69 moisture mitsubishi FX-48MR FX-64MR
    Text: Issued September 2001 232-5216 Data Pack D Data Sheet RS Mitsubishi FX Programmable Logic Controller The RS Mitsubishi FX programmable logic controller provides the latest in cost effective, efficiently implemented solutions to industrial control and similar applications.


    Original     		F-16NP/NT F2-32RM F2-30GM 16-bit 32-bit FX-EEPROM-4 F2-20gf1 Melsec* fx-64mr TRIAC 8315 Mitsubishi FX48M FX-80MR FX-48MR YL 69 moisture mitsubishi FX-48MR FX-64MR PDF

    AN569 in Motorola Power Applications

    Abstract: motorola mosfet BASIC THERMAL MANAGEMENT OF POWER SEMICONDUCTORS MTP15N06V equivalent dpak DIODE ANODE COMMON motorola ir 722c motorola Power Applications Manual mtv32 DV240 AN1083
    Text: Thermal Compendium Table of Contents Abstracts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Basic Semiconductor Thermal Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7


    Original     		PDF

    1000w inverter PURE SINE WAVE schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
    Text: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design


    Original     		PDF

    equivalent transistor rf "30 mhz"

    Abstract: MRF392 NPN TRANSISTOR Z4 lx125 motorola rf Power Transistor mrf392 motorola
    Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —


    OCR Scan     		MRF392 equivalent transistor rf "30 mhz" NPN TRANSISTOR Z4 lx125 motorola rf Power Transistor mrf392 motorola PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor D esigned prim arily for w ideband la rg e-sig nal output and driver am plifier stages in the 30 to 500 M H z frequency range. • Specified 28 Volt, 400 MHz Characteristics —


    OCR Scan     		MRF392 PDF

    UF2840G

    Abstract: transistor C 245 b
    Text: P i com pany RF MOSFET Power Transistor, 40W, 28V 100-500 MHZ UF2840G - A - B » Features f— H— j • N -Channel E n h an cem en t M ode D evice I I • DM OS Structure • Low er C ap acitan ces for B roadb an d O p eratio n


    OCR Scan     		UF2840G 72APACITOR 1000pF 2-500pF 500pF UF2840G transistor C 245 b PDF

    C04-013

    Abstract: 74ls10 IC CMOS 4000B series rca 74 HC Series ICs C04013
    Text: Application Notes Power Consumption in QMOS Logic Circuits by R. Funk and B. Heinze QMOS, RCA’s high-speed CMOS-logic technology, offers users the best features of both CMOS and TTL tech nolog ies: the low-power consumption of CMOS and the fast speeds associated with LSTTL. This Application Note focuses on


    OCR Scan     		SSD-290. C04-013 74ls10 IC CMOS 4000B series rca 74 HC Series ICs C04013 PDF

    equivalent transistor c 243

    Abstract: VDD400 "RF MOSFET" 400v 10 amp n-channel mosfet equivalent transistor an 243 f10 transistor 10F10 LF4030C equivalent transistor rf "30 mhz" D8s mosfet
    Text: A jfc C D V i m an A M P com pany RF MOSFET Power Transistor, 30W, 40V 500 -1000 MHz LF4030C V2.00 Features • • • • • • N-Channel Enhancement Mode Device Gold Metallized Resfet Structure Lower Capacitances for Broadband Operation Common Source Configuration


    OCR Scan     		LF4030C 5b422D5 equivalent transistor c 243 VDD400 "RF MOSFET" 400v 10 amp n-channel mosfet equivalent transistor an 243 f10 transistor 10F10 LF4030C equivalent transistor rf "30 mhz" D8s mosfet PDF