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    EQUIVALENT TRANSISTOR Search Results

    EQUIVALENT TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation

    EQUIVALENT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HN7G02FE

    Abstract: RN2110 SSM3K03FE
    Text: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent


    Original     		PDF HN7G02FE RN2110 SSM3K03FE HN7G02FE

    HN7G09FE

    Abstract: RN1104F SSM3K15FS
    Text: HN7G09FE TOSHIBA Multichip Discrete Device HN7G09FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN1104F equivalent Q2 (MOSFET): SSM3K15FS equivalent


    Original     		PDF HN7G09FE RN1104F SSM3K15FS HN7G09FE

    Power MOSFET, toshiba

    Abstract: 2SK1830 HN7G05FU RN2301 Power MOSFET, P, toshiba HIGH POWER MOSFET TOSHIBA
    Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent


    Original     		PDF HN7G05FU RN2301 2SK1830 Power MOSFET, toshiba HN7G05FU Power MOSFET, P, toshiba HIGH POWER MOSFET TOSHIBA

    HN7G02FE

    Abstract: RN2110 SSM3K03FE On semiconductor power MOSFET reliability report
    Text: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent


    Original     		PDF HN7G02FE RN2110 SSM3K03FE HN7G02FE On semiconductor power MOSFET reliability report

    Untitled

    Abstract: No abstract text available
    Text: HN7G02FE TOSHIBA Multichip Discrete Device HN7G02FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2110 equivalent Q2 (MOSFET): SSM3K03FE equivalent


    Original     		PDF HN7G02FE RN2110 SSM3K03FE

    HN7G09FE

    Abstract: RN1104F SSM3K15FS
    Text: HN7G09FE TOSHIBA Multichip Discrete Device HN7G09FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN1104F equivalent Q2 (MOSFET): SSM3K15FS equivalent


    Original     		PDF HN7G09FE RN1104F SSM3K15FS HN7G09FE

    2SK1830

    Abstract: HN7G05FU RN2301
    Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent


    Original     		PDF HN7G05FU RN2301 2SK1830 HN7G05FU

    Untitled

    Abstract: No abstract text available
    Text: HN7G09FE TOSHIBA Multichip Discrete Device HN7G09FE Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN1104F equivalent Q2 (MOSFET): SSM3K15FS equivalent


    Original     		PDF HN7G09FE RN1104F SSM3K15FS

    2SK1830

    Abstract: HN7G05FU RN2301
    Text: HN7G05FU TOSHIBA Multichip Discrete Device HN7G05FU Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Unit: mm Q1 transistor : RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent


    Original     		PDF HN7G05FU RN2301 2SK1830 HN7G05FU

    HN7G02FU

    Abstract: 2SK1830 RN2110 2SK183
    Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


    Original     		PDF HN7G02FU RN2110 2SK1830 HN7G02FU 2SK183

    2SK1830

    Abstract: HN7G02FU RN2110
    Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


    Original     		PDF HN7G02FU RN2110 2SK1830 HN7G02FU

    2SK1830

    Abstract: HN7G02FU RN2110
    Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


    Original     		PDF HN7G02FU RN2110 2SK1830 HN7G02FU

    2SA1955

    Abstract: HN7G03FU SSM3K04FU
    Text: HN7G03FU TOSHIBA Multichip Discrete Device HN7G03FU Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 transistor : 2SA1955 equivalent Q2 (S-MOS) : SSM3K04FU equivalent Q1 Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G03FU 2SA1955 SSM3K04FU HN7G03FU

    2SK1830

    Abstract: HN7G02FU RN2110
    Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


    Original     		PDF HN7G02FU RN2110 2SK1830 HN7G02FU

    2SA1955

    Abstract: HN7G03FU SSM3K04FU
    Text: HN7G03FU TOSHIBA Multichip Discrete Device HN7G03FU Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications Q1 transistor : 2SA1955 equivalent Q2 (S-MOS) : SSM3K04FU equivalent Q1 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G03FU 2SA1955 SSM3K04FU HN7G03FU

    2SA1955

    Abstract: HN7G01FE SSM3K03FE
    Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (Transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FE 2SA1955 SSM3K03FE HN7G01FE

    2SA1955

    Abstract: HN7G01FE SSM3K03FE
    Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FE 2SA1955 SSM3K03FE HN7G01FE

    Untitled

    Abstract: No abstract text available
    Text: Vishay Telefunken Physical Explanations AQL Acceptable Quality Level see chapter “Quality Data” B, b Base, base terminal C, c Collector, collector terminal The transistor equivalent circuit (see chapter “Transistor Equivalent Circuit”) shows the different


    Original     		PDF

    2SC5376F

    Abstract: HN7G10FE SSM3K03FE 2sC537
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Unit: mm Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE HN7G10FE 2sC537

    Untitled

    Abstract: No abstract text available
    Text: HN7G01FE TOSHIBA Multichip Discrete Device HN7G01FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SA1955 equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G01FE 2SA1955 SSM3K03FE

    Untitled

    Abstract: No abstract text available
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE

    Untitled

    Abstract: No abstract text available
    Text: HN7G10FE TOSHIBA Multichip Discrete Device HN7G10FE Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • Q1 transistor : 2SC5376F equivalent • Q2 (MOSFET): SSM3K03FE equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF HN7G10FE 2SC5376F SSM3K03FE

    EM 323

    Abstract: No abstract text available
    Text: DTA124 EM/EE/EUA/ECA/ESA CREAT BY ART PNP Small Signal Transistor Small Signal Product Features Equivalent Circuit ◇Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistor see equivalent circuit


    Original     		PDF DTA124 Packi25 OT-523 OT-723 EM 323

    DARLINGTON TRANSISTOR ARRAYS pu1501

    Abstract: PU1501 PU4471 pu1601 zener diode 100w PU4128 PUB4702 PU3143 Fly DS 100 PU61C56
    Text: Transistors Selection Guide by Applications and Functions IPower Transistor Arrays Series Name PU3000 Series PUA3000 Series PU4000 Series Equivalent Circuit 8-Pin • SIL Package (D68)(D69) Package {No.) Equivalent Circuit \ Structure Application \ General


    OCR Scan     		PDF PU3000 PUA3000 PU4000 10-Pin PU3210 PU3211 PU3212 PU3213 PU3214 PU3215 DARLINGTON TRANSISTOR ARRAYS pu1501 PU1501 PU4471 pu1601 zener diode 100w PU4128 PUB4702 PU3143 Fly DS 100 PU61C56