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    EQUIVALENT DIODE FOR 1SS41 Search Results

    EQUIVALENT DIODE FOR 1SS41 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    EQUIVALENT DIODE FOR 1SS41 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SS412

    Abstract: No abstract text available
    Text: 1SS412 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications Low forward voltage : VF = 1.0 V typ. Low reverse current : IR = 0.1 nA (typ.) Small total capacitance : CT = 3.0 pF (typ.) Small package : SC-70 Unit: imm Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS412 SC-70 1SS412

    1SS413

    Abstract: 030619EAA
    Text: 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5µA max : CT = 3.9pF (typ.) 0.07 M A Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse Voltage Symbol Rating


    Original     		PDF 1SS413 1SS413 030619EAA

    1SS419

    Abstract: No abstract text available
    Text: 1SS419 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications Small package • Low forward voltage: VF 3 = 0.56 V (typ.) • Low reverse current: IR = 5 µA (max) CATHODE MARK • Unit: mm Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS419 1SS419

    1SS418

    Abstract: No abstract text available
    Text: 1SS418 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage : VF 3 = 0.23V (typ.)@ IF = 5mA CATHODE MARK • Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 35 V Reverse voltage


    Original     		PDF 1SS418 1SS418

    1SS412

    Abstract: No abstract text available
    Text: 1SS412 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications z Low forward voltage : VF = 1.0 V typ. z Low reverse current : IR = 0.1 nA (typ.) z Small total capacitance : CT = 3.0 pF (typ.) z Small package : SC-70 Unit: imm


    Original     		PDF 1SS412 SC-70 1SS412

    1SS416

    Abstract: No abstract text available
    Text: 1SS416 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 High Speed Switching Application Unit: mm 0.6±0.05 A Characteristic Maximum peak reverse voltage Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200


    Original     		PDF 1SS416 1SS416

    1SS413

    Abstract: 11-L1 1-1L1A
    Text: 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5 A max : CT = 3.9pF (typ.) 0.07 M A Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 25 V Reverse voltage


    Original     		PDF 1SS413 1SS413 11-L1 1-1L1A

    1SS419

    Abstract: No abstract text available
    Text: 1SS419 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications Small package • Low forward voltage: VF 3 = 0.56 V (typ.) • Low reverse current: IR = 5 A (max) CATHODE MARK • Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS419 1SS419

    1SS418

    Abstract: No abstract text available
    Text: 1SS418 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage : VF 3 = 0.23V (typ.)@ IF = 5mA CATHODE MARK • Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM


    Original     		PDF 1SS418 1SS418

    1SS417

    Abstract: No abstract text available
    Text: 1SS417 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 High Speed Switching Application Unit: mm 0.6±0.05 Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum peak forward current IFM 200 mA Average forward current IO


    Original     		PDF 1SS417 1SS417

    1SS416

    Abstract: No abstract text available
    Text: 1SS416 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 High Speed Switching Application Unit: mm 0.6±0.05 Symbol Rating Unit 0.07 M A Maximum peak reverse voltage VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200 mA Average forward current


    Original     		PDF 1SS416 1SS416

    Untitled

    Abstract: No abstract text available
    Text: 1SS418 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS418 High Speed Switching Application Low forward voltage CATHODE MARK • Unit: mm : VF 3 = 0.23V (typ.)@ IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM


    Original     		PDF 1SS418

    1SS412

    Abstract: No abstract text available
    Text: 1SS412 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications z Low forward voltage : VF = 1.0 V typ. z Low reverse current : IR = 0.1 nA (typ.) z Small total capacitance : CT = 3.0 pF (typ.) z Small package : SC-70 Unit: imm


    Original     		PDF 1SS412 SC-70 1SS412

    1SS413

    Abstract: No abstract text available
    Text: 1SS413 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS413 Unit: mm High Speed Switching Application 0.6±0.05 : IR= 0.5 A max : CT = 3.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic 0.07 M A 1.0±0.05 Low reverse current Small total capacitance


    Original     		PDF 1SS413 1SS413

    Untitled

    Abstract: No abstract text available
    Text: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200


    Original     		PDF 1SS417CT

    1SS417CT

    Abstract: No abstract text available
    Text: 1SS417CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417CT High Speed Switching Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 200


    Original     		PDF 1SS417CT 1SS417CT

    Untitled

    Abstract: No abstract text available
    Text: 1SS416CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT Unit: mm High Speed Switching Application Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200


    Original     		PDF 1SS416CT

    Untitled

    Abstract: No abstract text available
    Text: 1SS419 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS419 High-Speed Switching Applications Small package • Low forward voltage: VF 3 = 0.56 V (typ.) • Low reverse current: IR = 5 A (max) CATHODE MARK • Unit: mm Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS419

    1SS417

    Abstract: No abstract text available
    Text: 1SS417 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417 High Speed Switching Application Unit: mm 0.6±0.05 Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum peak forward current IFM 200 mA Average forward current IO


    Original     		PDF 1SS417 1SS417

    Untitled

    Abstract: No abstract text available
    Text: 1SS416TS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416TS High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.24V typ. @IF = 5mA 0.6±0.05 Reverse voltage VRM 35 V VR 30 V Maximum (peak) forward current IFM


    Original     		PDF 1SS416TS

    Untitled

    Abstract: No abstract text available
    Text: 1SS417TS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS417TS High Speed Switching Application • Unit: mm Small package Low forward voltage: VF 3 = 0.56V (typ.) Low reverse current: IR = 5 A (Max.) 0.6±0.05 A Symbol Rating Unit VRM 45 V Reverse voltage


    Original     		PDF 1SS417TS

    1SS416

    Abstract: No abstract text available
    Text: 1SS416 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416 High Speed Switching Application Unit: mm 0.6±0.05 Symbol Rating Unit 0.07 M A Maximum peak reverse voltage VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200 mA Average forward current


    Original     		PDF 1SS416 1SS416

    1SS416CT

    Abstract: No abstract text available
    Text: 1SS416CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT Unit: mm High Speed Switching Application Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit VRM 35 V Reverse voltage VR 30 V Maximum (peak) forward current IFM 200


    Original     		PDF 1SS416CT 1SS416CT

    DIODE S4 29

    Abstract: No abstract text available
    Text: £•< K/Diodes J [ — K i^p p + S ^p p —R i l / L i s t of Diode E quivalent Products f f ^ t t i ; o t ' T £ ± l C - S S L T i ' & ' i ' i I £ 4 ' £ U ST<T>?\ <£< <r'{iJ5CQ±, c?i'„ The characteristics of the equivalent products do not always agree with those of the diode products. Therefore, be


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