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    MMBT2907ALT1G

    Abstract: data sheet transisters transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G
    Text: MMBT2907ALT1 General Purpose Transisters PNP Silicon Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2907A Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage


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    PDF MMBT2907ALT1 MMBT2907ALT1/D MMBT2907ALT1G data sheet transisters transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G

    MMBT2907ALT1G

    Abstract: transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G
    Text: MMBT2907ALT1 General Purpose Transisters PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage VCBO −60 Vdc Emitter −Base Voltage


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    PDF MMBT2907ALT1 MMBT2907ALT1/D MMBT2907ALT1G transisters datasheets 1N916 MMBT2907ALT1 MMBT2907ALT3 MMBT2907ALT3G

    d2166

    Abstract: Hyperstone ding dong GMS30C2116 GMS30C2132 d1431 6116 sram d557 d2529 sr0n
    Text: Jun 13, 2001 Ver. 3.1 16/32 BIT RISC/DSP GMS30C2116 GMS30C2132 USER’S MANUAL Revision 3.1 Published by IDA Team in Hynix Semiconductor Inc. ¨ ÏHynix Semiconductor 2001. All Right Reserved. Hynix Offices in Korea or Distributors and Representatives listed at address directory may serve


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    PDF GMS30C2116 GMS30C2132 32bits d2166 Hyperstone ding dong GMS30C2116 GMS30C2132 d1431 6116 sram d557 d2529 sr0n

    Hyperstone

    Abstract: ding dong GMS30C2116 GMS30C2132 GMS30C2216 GMS30C2232 d1135
    Text: Jun. 29, 2001 Ver. 3.1 16/32 BIT RISC/DSP GMS30C2216 GMS30C2232 USER’S MANUAL Revision 3.1 Published by IDA Team in Hynix Semiconductor Inc. ¨ ÏHynix Semiconductor 2001. All Right Reserved. Hynix Offices in Korea or Distributors and Representatives listed at address directory may


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    PDF GMS30C2216 GMS30C2232 32bits Hyperstone ding dong GMS30C2116 GMS30C2132 GMS30C2216 GMS30C2232 d1135

    fe 1.1s

    Abstract: GM76C512 a 683 transister GM76 GM76C256B GM76C5 cs25-02
    Text: @ LG Semicon. Co., LTD. Description Pin Configuration The GM76C256B is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with minimum cycle time of 55/70/E&s. The device is placed in a low


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    PDF GM76C256B 55/70/E GM76C256BL/BLL 450mil) 55/70/85ns CS250 fe 1.1s GM76C512 a 683 transister GM76 GM76C5 cs25-02

    equal transister

    Abstract: AS3LC2M16
    Text: February 2002 Advance information AS3LC2M16 Š 2.7V to 3.3V 2M X 16 IntelliwattTM Super Low-Power CMOS Pseudo Static SRAM Features • • • • • • • AS3LC2M16 Intelliwatt active power circuitry Industrial, commercial and extended temperature ranges


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    PDF AS3LC2M16 48-ball equal transister AS3LC2M16

    Untitled

    Abstract: No abstract text available
    Text: February 2002 Advance Information AS3V2M16 Š 2.7V to 3.3V 2M X 16 Super Low-Power CMOS Pseudo Static SRAM Features • • • • • • AS3V2M16 Industrial, commercial and extended temperature ranges Organization: 2M words x 16 bits 2.7V to 3.3V power supply range


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    PDF AS3V2M16 48-ball

    serdes hdmi optical fibre

    Abstract: camera-link to hd-SDI converter RS-485 spice camera-link to HDMI converter 10G BERT 40 pin lvds laptop connector camera-link to 3G-SDI converter hd-SDI deserializer LVDS HDMI cat5 specifications of tdr
    Text: LVDS Owner’s Manual Including High-Speed CML and Signal Conditioning Fourth Edition 2008 High-Speed Interface Technologies Overview. 9-13 Network Topology. 15-17 SerDes Architectures. 19-29 Termination and Translation.31-38


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    at08a

    Abstract: electronic ballast with MJE13002 electronic 40 w tube light choke 40 w electronic tube light choke SIMPLE 40w inverter circuit tube light choke test FERRITE core TRANSFORMER 300 watt inverter MJE12007 Ferrite 3c8 ELECTRONIC BALLAST 40W SCHEMATIC
    Text: ELECTRONIC BALLASTS, Prepare,y R, J.Haver Motorola Inc. Voltage fed and current fed resonant inverter circuits for fluorescent lamp ballasts are discussed and a design example is presented. ,:!$,. A typical fluorescent lamp is a l-to 2-inch diameter on its


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    PDF 200mA. MJE13002 200kHz 4-15V) 200mA AR1635, at08a electronic ballast with MJE13002 electronic 40 w tube light choke 40 w electronic tube light choke SIMPLE 40w inverter circuit tube light choke test FERRITE core TRANSFORMER 300 watt inverter MJE12007 Ferrite 3c8 ELECTRONIC BALLAST 40W SCHEMATIC

    CMOS op-amp

    Abstract: No abstract text available
    Text: UNIVERSAL SEMICONDUCTOR INC. ANALOG-DIGITAL CMOS SEMI-CUSTOM SYSTEMS ON A CHIP USI-6000 SEMI-CUSTOM ARRAY 1925 Zanker Road San Jose, California 95112 408 436-1906 FAX (408) 436-1125 TWX 910-338-7617 1 HIGH PERFORMANCE, HIGH RELIABILITY, CMOS ARRAY FAMILY


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    PDF USI-6000 CMOS op-amp

    USI6000

    Abstract: MICRON RESISTOR Mos operational amplifier discrete schematic transistors cross reference list transistors cross reference nmos pmos array pMOS transistor transisTOR q106 cmos opamp photo transister
    Text: UNIVERSAL SEMICONDUCTOR INC. ANALOG-DIGITAL CMOS SEMI-CUSTOM SYSTEMS ON A CHIP USI-6000 SEMI-CUSTOM ARRAY 1925 Zanker Road San Jose, California 95112 408 436-1906 FAX (408) 436-1125 TWX 910-338-7617 This Material Copyrighted By Its Respective Manufacturer


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    PDF USI-6000 C31G33 USI6000 MICRON RESISTOR Mos operational amplifier discrete schematic transistors cross reference list transistors cross reference nmos pmos array pMOS transistor transisTOR q106 cmos opamp photo transister

    S3 TRIO 64

    Abstract: No abstract text available
    Text: UNITED MICROELECTRONICS Ì 2 D Ë | TBSSôia 0Q004SS 3 9325812 U N IT E D M IC R O E L E C T R O N IC S 92D 00455 D J l7 7 -/3 U M 5101 rr.T .n Voice Recording and r ” " i Reproducing CTJ- Features • DRAM is used as a voice data memory. ■ The RC oscillator makes sample rate changing fea%


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    PDF 0Q004SS 8K-32K f/15V UM5101 UMS101 /200V S3 TRIO 64

    Untitled

    Abstract: No abstract text available
    Text: J-FET INPUT OPERATIONAL AMPLIFIER NJM062/064 The NJM062/064 are J-FET input operational amplifiers which were designed as low-power versions of the NJM082. They feature high input impedance, wide bandwidth, high slew rate, and low input offset and bias current. The NJM062


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    PDF NJM062/064 NJM062/064 NJM082. NJM062 NJM4558/2043/2904/3404/072 NJM064 NJM2902/3403/2058/2059/2060. Input62 NJM062/ 100ffi)

    NJM062

    Abstract: No abstract text available
    Text: J-fET INPUT O P E R A M M L AMPLIFIER ^ NJM062/064 T he NJM062/064 are J-F E T input operational amplifiers which w ere designed as low-power versions of the NJM082. T hey featu re high input im pedance, wide bandw idth, high slew rate, and low input offset and bias current. T he NJM062


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    PDF NJM062/064 NJM062/064 NJM082. NJM062 NJM4558/2043/2904/3404/072 NJM064 NJM2902/3403/2058/2059/2060. NJM062/

    M69030P

    Abstract: Ceramic CAPACITOR KA5 M50196-001P Ceramic CAPACITOR KA4 M69030 M50196 vmc mitsubishi kwe 15h M5019 KA5 capacitor
    Text: MITSUBISHI SOUND PROCESSORS M 5 0 1 9 6 -0 0 1 P DIGITAL KEY CONTROLLER DESCRIPTION M 5 0 1 9 6 -0 0 1 P is a digital key control IC fabricated w ith PIN CONFIGURATION TOP VIEW silicon-gate CMOS technology. M 5 0196-001 P converts frequencies by firs t A-D converting


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    PDF 100n7 14HPF1 16REF 18D-G 22KDN 23TFA M69030P M5218 M69030P Ceramic CAPACITOR KA5 M50196-001P Ceramic CAPACITOR KA4 M69030 M50196 vmc mitsubishi kwe 15h M5019 KA5 capacitor

    1.5v Quartz Clock

    Abstract: Digital Alarm Clock 40 pin digital alarm clock ic transister circuit of alarm clock KS5221A KS5221 "Frequency Divider" KS5221E KS5221F
    Text: KS5221 CMOS DIGITAL INTEGRATED CIRCUIT BIPOLAR STEPPING MOTOR DRIVE ANALOG CLOCK The KS5221 series w ith alarm fun ction is CMOS integrat­ ed c irc u it fo r use in c lo c k w ith bip o la r step ping m otor. FUNCTIONS • O utput pulse du ration: KS5221A = 0.5Hz, 1 sec


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    PDF KS5221 KS5221 KS5221A KS5221E KS5221F 768KHz 768Hz 1.5v Quartz Clock Digital Alarm Clock 40 pin digital alarm clock ic transister circuit of alarm clock KS5221A "Frequency Divider" KS5221E KS5221F

    NJM062

    Abstract: ic njm4558 pin diagram
    Text: J-FET INPUT OPERATIONAL AMPLIFIER NJM062/064 The NJM062/064 are J-F E T input operational amplifiers which were designed as low-power versions of the NJM082. They feature high input impedance, wide bandwidth, high slew rate, and low input offset and bias current. The NJM062


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    PDF NJM062/064 NJM062/064 NJM082. NJM062 NJM4558/2043/2904/3404/072 NJM064 NJM2902/3403/2058/2059/2060. ic njm4558 pin diagram

    CT7605

    Abstract: vbe 12v, vce 600v NPN Transistor Westcode Darlington 30A darlington NPN 600V 50a transistor
    Text: WESTCODE SEMICONDUCTORS 1TE D ìto tiss G D G ain 1 r - S 3 -is-. Technical Publication WESTCODE SEMICONDUCTORS CT7605 Issue 3 . July 1985 NPN POWER TRANSISTOR CT7605 I K \ Ratings POWERSWITCH 600 VOLTS 250 AM PERES Fast Switching V CEV 600V V CEO SUS 500V


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    PDF CT7605 545kgf 100kgf 47nux 100mA lc200A CT7605 vbe 12v, vce 600v NPN Transistor Westcode Darlington 30A darlington NPN 600V 50a transistor

    transisters

    Abstract: No abstract text available
    Text: NJM062/064 p R C l J-FET INPUT OPERATIONAL AMPLIFIER PACKAGE OUTLINE • GENERAL DESCRIPTION T h e N JM 0 6 2 /0 6 4 are J-F E T in p u t o p e ra tio n a l a m p lifie rs w hich w ere designed as lo w -p o w er versions o f the N JM 082. T h ey feature high in p u t im pedance, w ide bandw idth, h ig h slew rate, and low input


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    PDF NJM062/064 transisters

    NJM062

    Abstract: NJM082D NJM064 NJM082 transisters 429 dip8
    Text: NJM062/064 J-FET INPUT OPERATIONAL AMPLIFIER PACKAGE OUTLINE • GENERAL DESCRIPTION The N JM 062/064 are J-FET input operational am plifiers which were designed as low-power versions of the NJM082. They feature high input impedance, wide bandwidth, high slew rate, and low input


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    PDF NJM062/064 NJM062/064 NJM082. NJM062 NJM4558/2043/2904/3404/072 NJM064 NJM2902/3403/ 10l2n NJM082D NJM082 transisters 429 dip8

    Untitled

    Abstract: No abstract text available
    Text: NJM062/064 J-fET INPUT OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION PACKAGE OUTLINE T he N J M 062/064 are J-FET input operational am plifiers w hich were designed as low -p ow er versions o f the N JM 082. They feature high input impedance, w ide bandwidth, high slew rate, and low input


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    PDF NJM062/064 MQ62D KJM82M

    NJM062

    Abstract: No abstract text available
    Text: J-FET INPUT OPERATIONAL AMPLIFIER NJM062/064 T he NJM062/064 are J-F E T input operational amplifiers which were designed as low-power versions of the NJM082. T hey feature high input im pedance, wide bandw idth, high slew rate, and low input offset and bias current. T he NJM062


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    PDF NJM062/064 NJM062/064 NJM082. NJM062 NJM4558/2043/2904/3404/072 NJM064 NJM2902/3403/2058/2059/2060.

    Untitled

    Abstract: No abstract text available
    Text: NJM062/064 E jw q J-FET INPUT OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION PACKAGE OUTLINE T h e N JM 0 6 2 /0 6 4 are J -F E T in p u t o p eratio n al a m p lifie rs w hich w ere desig n ed as lo w -p o w er versions o f the N JM 082. They feature high input im pedance, w ide bandw idth, high slew rate, and low input


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    PDF NJM062/064 transiste-50

    battery c-s2

    Abstract: 76C8128 566 function
    Text: GM76C8128BSL LG Semicon Co.,Ltd. 131,072 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration The GM76C8128SL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.7«m advanced CMOS technology and it provides high speed operation with minimum


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    PDF GM76C8128BSL GM76C8128SL 55/70/85ns. 76C8128BSL 32-pin 600mil) 525mil) 28BSL battery c-s2 76C8128 566 function