Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity.
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2SB1260
2SB1260
OT-89
2SB1260L
2SB1260-AB3-R
2SB1260L-AB3-R
OT-89
QW-R208-017
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Untitled
Abstract: No abstract text available
Text: UTC 2SA1627 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627 is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. *High-speed switching
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2SA1627
2SA1627
O-126
QW-R204-010
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transistor b1
Abstract: hlb124 NPN Transistor 600V 1S1000 utchlb124
Text: UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage
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HLB124
HLB124
O-220
HLB124L
QW-R203-029
transistor b1
NPN Transistor 600V
1S1000
utchlb124
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.
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2SB1260
2SB1260
OT-89
O-252
2SB1260L
2SB1260-x-AB3-F-R
2SB1260L-x-AB3-F-R
2SB1260-x-TN3-F-R
2SB1260L-x-TN3-F-R
2SB1260-x-TN3-F-T
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Untitled
Abstract: No abstract text available
Text: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89
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2SB1260
2SB1260
OT-89
QW-R208-017
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bcp68t1
Abstract: BCP68T3 BCP69T1 SMD310
Text: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the
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BCP68T1
OT-223
r14525
BCP68T1/D
bcp68t1
BCP68T3
BCP69T1
SMD310
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PDF
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BCP68T1
Abstract: BCP68T3 BCP69T1 SMD310
Text: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the
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BCP68T1
OT-223
r14525
BCP68T1/D
BCP68T1
BCP68T3
BCP69T1
SMD310
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Untitled
Abstract: No abstract text available
Text: UTC 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES *High voltage *Low collector saturation voltage. 1 *High-speed switching
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2SA1627A
2SA1627A
O-126C
QW-R217-004
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Untitled
Abstract: No abstract text available
Text: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89
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2SB1260
2SB1260
OT-89
100ms
QW-R208-017
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PDF
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the
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OT-223
BCP68T1
inch/1000
BCP68T3
inch/4000
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2sa1013
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.
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2SA1013
2SA1013
2SA1013L-x-AB3-R
2SA1013G-x-AB3-R
2SA1013L-x-T92-B
2SA1013G-x-T92-B
2SA1013L-x-T92-K
2SA1013G-x-T92-K
2SA1013L-x-T9N-B
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.
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2SA1013
2SA1013
2SA1013L-x-AB3-R
2SA1013G-x-AB3-R
2SA1013L-x-T92-B
2SA1013G-x-T92-B
2SA1013L-x-T92-K
2SA1013G-x-T92-K
2SA1013L-x-T9N-B
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Untitled
Abstract: No abstract text available
Text: UTC 2SC2482 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR APPLICATIONS *HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS *COLOR TV HORIZ. DRIVER APPLICATIONS *COLOR TV CHROMA OUTPUT APPLICATIONS 1 FEATURES *High Voltage :V BR CEO= 300V
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2SC2482
O-92NL
100ms*
500ms*
QW-R211-015
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Untitled
Abstract: No abstract text available
Text: UTC 2SA1201 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and 1 voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz typ.
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2SA1201
2SA1201
-120V
120MHz
OT-89
250mm2
QW-R208-024
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3053 TRANSISTOR
Abstract: transistor 3053 2N3053
Text: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Allgem ein Applications: G eneral Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Hohe Strom verstärkung • High current gain
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Kolle00
3053 TRANSISTOR
transistor 3053
2N3053
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BD238 PNP EPITAXIAL SILICON TRANSISTOR -80V, PNP TRANSISTOR DESCRIPTION The UTC BD238 is a PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-emitter breakdown voltage, etc.
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BD238
BD238
BD238L-T6S-K
BD238G-T6S-K
O-126S
QW-R226-002,
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2n3700
Abstract: tfk 140
Text: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Allgem ein Applications: G eneral Features: Besondere Merkmale: • Hohe Sperrspannung • High reverse voltage • Hohe S trom verstärkung • High current gain
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TC200 Preliminary NPN EPITAXIAL SILICON TRANSISTOR EPITAXIAL PLANAR NPN TRANSISTOR DESCRIPTION The UTC TC200 is an epitaxial planar NPN transistor; it uses UTC’s advanced technology to provide the customers with high DC
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TC200
TC200
TC200L-x-T92-B
TC200G-x-T92-B
TC200L-x-T92-K
TC200G-x-T92-K
QW-R201-087
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pnp transistor 600V
Abstract: PNP -600v
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 1 TO-126C DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. FEATURES * High voltage
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2SA1627A
O-126C
2SA1627A
O-126
2SA1627AL-T60-K
2SA1627AG-T60-K
2SA1627AL-T6C-K
2SA1627AG-T6C-K
O-126
O-126C
pnp transistor 600V
PNP -600v
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1693 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SA1693 is a silicon PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high
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2SA1693
2SA1693
2SA1693L-x-T3P-T
2SA1693G-x-T3P-T
QW-R214-017
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PDF
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PNP -600v
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR 1 TO-252 DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications. 1 TO-126 FEATURES * High voltage
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2SA1627A
O-252
2SA1627A
O-126
O-126C
2SA1627AL-x-T60-K
2SA1627AG-x-T60-K
2SA1627AL-x-T6C-K
2SA1627AG-x-T6C-K
2SA1627AL-x-TN3-R
PNP -600v
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Untitled
Abstract: No abstract text available
Text: UTC 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. 2 1 FEATURES *High breakdown voltage : BVCEO= -80V *Low VCE sat : VCE(sat)= -0.2V (Typ) (Ic/IB = -0.5A/-50mA)
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2SB1198
2SB1198
A/-50mA)
OT-23
QW-R206-040
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a1012 transistor
Abstract: transistor A1012 a1012 a1012* transistor
Text: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for high current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.)
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2SA1012
A1012
2SC2562
O-220
QW-R203-015
a1012 transistor
transistor A1012
a1012* transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for high current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.)
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2SA1012
A1012
2SC2562
O-252
QW-R209-008
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