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    Efficient Power Conversion

    Efficient Power Conversion EPC8002

    GANFET N-CH 65V 2A DIE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EPC8002 Reel 45,000 2,500
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    • 10000 $1.5375
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    EPC8002 Datasheets (3)

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    EPC8002 EPC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS GAN 65V 2.7A BUMPED DIE Original PDF
    EPC8002ENGR Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 65V 2A BUMPED DIE Original PDF
    EPC8002TENGR Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 65V 2A BUMPED DIE Original PDF

    EPC8002 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: EPC8002 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: • VDS, 65 V • RDS on , 530 mΩ • ID, 2 A • Optimized eGaN FET for high frequency applications • Pb-Free (RoHS Compliant), Halogen Free EPC8002 eGaN FETs are supplied only in


    Original     		EPC8002 EPC8002 PDF

    EPC8004

    Abstract: No abstract text available
    Text: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been


    Original     		AN015 EPC8000 ATS-54150K-C2-R0 EPC8004 PDF