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    Excelics Semiconductor Inc EPB018A770FET

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    EPB018A7 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EPB018A7 Excelics Semiconductor 4-5V high super low noise high gain heterojunction power FET Original PDF
    EPB018A7 Excelics Semiconductor Super Low Noise High Gain Heterojunction FET Original PDF
    EPB018A7-70 Eon Silicon Solution Super Low Noise High Gain Heterojunction FET Original PDF
    EPB018A7-70 Excelics Semiconductor Super Low Noise High Gain Heterojunction FET Original PDF

    EPB018A7 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EFA018A

    Abstract: EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70
    Text: 310 De Guigne Drive, Sunnyvale, CA 94085 Tel: 408-737-1711 Fax: 408-737-1868 Quick Reference Guide for 2 GHz Applications Device Type Bias A Discrete Devices: EPB018A5 EPB018A7 EPB018A9 EPB025A 2V/15mA 2V/15mA 2V/15mA 2V/15mA 15 15 15 15 0.4 0.5 0.6 0.5 20


    Original     		PDF EPB018A5 EPB018A7 EPB018A9 EPB025A V/15mA EFA018A EFA025A EFA018A EPA025A EPA060B-70 EFA240D-SOT89 EPA018A EPA060B EPA018 EPB018A5 CP083 EFA025A-70

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF

    A970

    Abstract: EPB018A7-70 igd 515 EPB018A5-70 EPB018A9-70 EPB018A9 A9-70 FET
    Text: Excelics EPB018A5/A7/A9-70 DATA SHEET Super Low Noise High Gain Heterojunction FET     6 6  '  • • • NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE TYPICAL 0.50~0.90dB NOISE FIGURE AND 11.5~13.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED “ MUSHROOM” GATE


    Original     		PDF EPB018A5/A7/A9-70 12GHz Compressio18 Rn/50 A970 EPB018A7-70 igd 515 EPB018A5-70 EPB018A9-70 EPB018A9 A9-70 FET

    EPB018A5

    Abstract: EPB018A7
    Text: EPB018B5/B7/B9 Super Low Noise High Gain Heterojunction FET ISSUED 11/01/2007 FEATURES • • • • • • VERY HIGH fmax: 120GHz TYPICAL 0.50~0.90dB NOISE FIGURE AND 12.0~13.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EPB018B5/B7/B9 120GHz 12GHz EPB018B5 EPB018B7 EPB018B9 EPB018A5 EPB018A7

    EPA025A70

    Abstract: EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A
    Text: EXCELICS SEMICONDUCTOR, INC. RTC/10/01/98 Typical Noise Figure/Associated Gain For Excelics FETs Device Type Bias Condition Frequency N.F. Typical Ga (Typical) A.) Power FETs EPA080A 6V/25% Idss 12GHz 1.20dB 9.5dB EPA060B 6V/25% Idss 12GHz 1.15dB 10.0dB


    Original     		PDF RTC/10/01/98 EPA080A 12GHz EPA060B EPA040A EPA025A V/15mA V/10mA EPA025A70 EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A

    EPB018A5

    Abstract: AU 6378
    Text: Excelics EPB018A5/A7/A9 DATA SHEET Super Low Noise High Gain Heterojunction FET • • • • • •   VERY HIGH fmax: 120GHz TYPICAL 0.50~0.90dB NOISE FIGURE AND 12.0~13.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED “ MUSHROOM” GATE Si3N4 PASSIVATION


    Original     		PDF EPB018A5/A7/A9 120GHz 12GHz EPB018A7 Rn/50 EPB018A5 AU 6378

    EPB018A5-70

    Abstract: EPB018A7-70 8664 EPB025A EPB018A7 EPB018A9 EPB018A9-70 EPB025A-70 EPB018A5 1580
    Text: Excelics Semiconductor, Inc. FETPL6, 9/99 EXCELICS PRODUCT LIST-I Super Low Noise High Gain Heterojunction FETs DEVICE TYPE SIZE um2 CHIP SIZE W(Gate)/Finger um2 um Bias N.F.* Ga* dB dB Freq. GHz Idss mA Bvgd* Freq. Range V Remark A.) Chips: EPB018A5 0.3x180


    Original     		PDF EPB018A5 3x180 320X290 EPB018A7 EPB018A9 EPB025A EPB018A5-70 EPB018A7-70 8664 EPB025A EPB018A7 EPB018A9 EPB018A9-70 EPB025A-70 EPB018A5 1580