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    EP 55 TRANSISTOR Search Results

    EP 55 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    EP 55 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LM2902-EP www.ti.com SGLS335A – APRIL 2006 – REVISED APRIL 2006 QUADRUPLE OPERATIONAL AMPLIFIER FEATURES • • • • • 1 • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C


    Original     		PDF LM2902-EP SGLS335A

    ss32 control pack

    Abstract: control pack ss32
    Text: TPS75003-EP www.ti.com SGLS311 – DECEMBER 2006 Triple-Supply Power Management IC for Powering FPGAs and DSPs FEATURES • • • • • • • • • • • • • Controlled Baseline – One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of -55°C


    Original     		PDF TPS75003-EP SGLS311 300-mA ss32 control pack control pack ss32

    2SD882U

    Abstract: No abstract text available
    Text: ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage


    Original     		PDF 2SD882U OT-89 2SD882U

    Untitled

    Abstract: No abstract text available
    Text: ST 2SD882H NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC-DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Symbol Value Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage


    Original     		PDF 2SD882H O-126

    Untitled

    Abstract: No abstract text available
    Text: ST 2SD882H NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC-DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Symbol Value Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage


    Original     		PDF 2SD882H O-126

    2SD882

    Abstract: ST2sd882
    Text: ST 2SD882 NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC-DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage


    Original     		PDF 2SD882 O-126 2SD882 ST2sd882

    Untitled

    Abstract: No abstract text available
    Text: ST 2SD882H NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Ta = 25 C Parameter O Symbol Value Unit Collector to Base Voltage


    Original     		PDF 2SD882H O-126

    D882 TO-92

    Abstract: b772 p D882 p D882 J D882 D882 B772 b772 D882 to 92 b772 pnp br d882
    Text: WTS772 WTS882 PNP/NPN Epitaxial Planar Transistors TO-92 1. EMITTER 1 2. COLLECTOR 2 3 3. BASE ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current (DC) Symbol VCEO VCBO VEBO IC(DC)


    Original     		PDF WTS772 WTS882 PNP/WTS772 NPN/WTS882 WTS772 WTS882 WTS77 WTS88 D882 TO-92 b772 p D882 p D882 J D882 D882 B772 b772 D882 to 92 b772 pnp br d882

    Untitled

    Abstract: No abstract text available
    Text: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%


    Original     		PDF MCP73831/2 MCP73831 MCP73832 DS20001984F-page

    2SD882

    Abstract: 2SB772
    Text: 2SB772 2SD882 PNP/NPN Epitaxial Planar Transistors TO-126 * “G” Lead Pb -Free 1. EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current (DC) Symbol


    Original     		PDF 2SB772 2SD882 O-126 PNP/2SB772 NPN/2SD882 2SD882 2SB772

    2SD882 pnp

    Abstract: 2sb772 2SD882 br d882 p D882 B772 D882 b772 p J D882 transistor D882 datasheet 2SB77
    Text: 2SB772 2SD882 PNP / NPN Epitaxial Planar Transistors TO-126 P b Lead Pb -Free 1.EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Rating Symbol PNP/2SB772 NPN/2SD882 Unit Collector-Emitter Voltage VCEO -30 30 Vdc Collector-Base Voltage VCBO


    Original     		PDF 2SB772 2SD882 O-126 PNP/2SB772 NPN/2SD882 O-126 2SD882 pnp 2sb772 2SD882 br d882 p D882 B772 D882 b772 p J D882 transistor D882 datasheet 2SB77

    Untitled

    Abstract: No abstract text available
    Text: WTD772 WTD882 PNP/NPN Epitaxial Planar Transistors TO-252/D-PAK * “G” Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current (DC)


    Original     		PDF WTD772 WTD882 O-252/D-PAK PNP/WTD772 NPN/WTD882 WTD772 WTD882 WTD88

    Untitled

    Abstract: No abstract text available
    Text: WTP772 WTP882 PNP/NPN Epitaxial Planar Transistors TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current (DC) Symbol VCEO VCBO VEBO IC(DC)


    Original     		PDF WTP772 WTP882 O-251 PNP/WTP772 NPN/WTP882 WTP772 WTP882 WTP88

    Untitled

    Abstract: No abstract text available
    Text: WTP772 WTP882 PNP/NPN Epitaxial Planar Transistors TO-251 * “G” Lead Pb -Free 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current (DC) Symbol


    Original     		PDF WTP772 WTP882 O-251 PNP/WTP772 NPN/WTP882 WTP772 WTP882 WTP88

    battery charger circuit using 555 timer

    Abstract: "Charge Management Controller" MCP73113
    Text: MCP73113/4 Single-Cell Li-Ion/Li-Polymer Battery Charge Management Controller with Input Overvoltage Protection Features: Description: • Complete Linear Charge Management Controller: - Integrated Input Overvoltage Protection - Integrated Pass Transistor


    Original     		PDF MCP73113/4 MCP73113) MCP73114) A-1100 Deplet778-366 DS22183D-page battery charger circuit using 555 timer "Charge Management Controller" MCP73113

    GSMBTA42

    Abstract: No abstract text available
    Text: ISSUED DATE :2005/08/31 REVISED DATE : G S M B TA 4 2 NP N EP ITAX I AL PL ANAR T RANSI STOR Description The GSMBTA42 is designed for high voltage transistor. Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.80 1.10 0.10 0.80 1.00 1.80 2.20 1.15


    Original     		PDF GSMBTA42 GSMBTA42

    GMBTA42

    Abstract: No abstract text available
    Text: ISSUED DATE :2003/11/27 REVISED DATE :2005/01/21B G M B TA 4 2 NP N EP ITAXIAL PL ANAR T RANS ISTO R Description The GMBTA42 is designed for high voltage transistor. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35


    Original     		PDF 2005/01/21B GMBTA42

    GMBT3838

    Abstract: No abstract text available
    Text: ISSUED DATE :2005/05/09 REVISED DATE : GM BT3838 NP N EP ITAX IAL PL ANAR T RANS ISTO R Description The GMBT3838 is designed for high frequency amplifier transistor. Features High transition frequency Small rbb’-Cc and high gain Small NF Package Dimensions


    Original     		PDF BT3838 GMBT3838

    77HI

    Abstract: MCP73223-C2S dual cell LiFePO4 battery management system Lifepo4 223 50k DFN-10 MCP73123 MCP73223 4544 MCP73X23EV-LFP
    Text: MCP73123/223 Lithium Iron Phosphate LiFePO4 Battery Charge Management Controller with Input Overvoltage Protection Features Description • Complete Linear Charge Management Controller: - Integrated Input Overvoltage Protection - Integrated Pass Transistor


    Original     		PDF MCP73123/223 MCP73123 MCP73223 DS22191B-page 77HI MCP73223-C2S dual cell LiFePO4 battery management system Lifepo4 223 50k DFN-10 MCP73123 MCP73223 4544 MCP73X23EV-LFP

    n4300

    Abstract: 2n1718 XB401 2N1720 XB412 T0117 transistor t05 XB411 2N3375 2N4128
    Text: Silicon Power Transistors Type Case No. C o 11 Toase = 25°C V CBO V O o > > "tn o o w u w Typical Performance Maximum Ratings at V EBO ^C DC V A f Ptot W MHz V CC V P IN W pOUT W nC % *T MHz c OB pF sc/oc3 VH F NPN 2N3866 T039 EP 55 30 4 400 28 0-1 1*2 45


    OCR Scan     		PDF N3866 XB401 2N3375 XB404 XB408 XB409 2N4128 T0117 2N3418 2N3419 n4300 2n1718 2N1720 XB412 transistor t05 XB411

    2SC3018

    Abstract: NPN Silicon Epitaxial Planar Transistor High volt
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3018 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION 2 S C 3 0 1 8 is a silicon NPN epitaxial planar typ e tra n sisto r desig OUTLINE DRAWING Dimensions in mm ned fo r 7 .2 V o lts VHF pow er am plifiers applications. FEATURES


    OCR Scan     		PDF 2SC3018 2SC3018 NPN Silicon Epitaxial Planar Transistor High volt

    2sc2904 TRANSISTOR

    Abstract: 2SC2904 hf amplifier 100w T-40
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2904 NPN EP ITA X IA L PLANAR T Y P E DISCRETIO N OUTLINE DRAWING 2 S C 2 9 0 4 is a silicon N P N epitaxial planar type transistor Dimensions in mm sp e cific a lly designed fo r high pow er a m plifiers in H F band. R1 FEATURES


    OCR Scan     		PDF 2SC2904 2SC2904 2sc2904 TRANSISTOR hf amplifier 100w T-40

    2SC2056

    Abstract: RF NPN POWER TRANSISTOR 7 WATT 175MHZ TO-39 c b t8e BH Rf transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC2056 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2056 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band portable or hand-held radio applications. D im e n sio n s in m m


    OCR Scan     		PDF 2SC2056 175MHz 175MHz RF NPN POWER TRANSISTOR 7 WATT 175MHZ TO-39 c b t8e BH Rf transistor

    7w RF POWER TRANSISTOR NPN

    Abstract: 2SC3021 12W 97 T-31E transistor 1.2w high power npn UHF transistor
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3021 NPN EP ITA X IA L PLANAR T Y P E DESCRIPTION 2SC3021 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF power amplifiers applications. OUTLINE DRAWING D im en sions in m m FEATURES •


    OCR Scan     		PDF 2SC3021 2SC3021 520MHz, 7w RF POWER TRANSISTOR NPN 12W 97 T-31E transistor 1.2w high power npn UHF transistor