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    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s


    Original
    EN2007C 2SA1419/2SC3649 2SA1419 250mm2 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1419 / 2SC3649 Ordering number : EN2007C SANYO Semiconductors DATA SHEET 2SA1419/2SC3649 PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity


    Original
    2SA1419 2SC3649 EN2007C 2SA1419/2SC3649 2SA1419 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1419 / 2SC3649 Ordering number : EN2007C SANYO Semiconductors DATA SHEET 2SA1419/2SC3649 Features PNP / NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Adoption of FBET, MBIT processes High breakdown voltage and large current capacity


    Original
    2SA1419 2SC3649 EN2007C 2SA1419/2SC3649 2SA1419 PDF