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    EMP212 Search Results

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    EMP212 Price and Stock

    OMRON Industrial Automation A22NE-M-P212-N

    SWITCH ESTOP TWIST RESET 5A 125V
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    DigiKey A22NE-M-P212-N Tray 1
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    OMRON Corporation A22NE-M-P212-N

    Emergency Stop Pushbutton Switch 2NC/1NO Turn Reset 40mm Dia. Non-Lighted IP65 Push-in Plus Terminal Block Panel Mount - Bulk (Alt: A22NEMP212N)
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    Avnet Americas A22NE-M-P212-N Bulk 1
    • 1 $63.072
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    Mouser Electronics A22NE-M-P212-N
    • 1 $93.41
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    TME A22NE-M-P212-N 1
    • 1 $82.97
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    Omega Engineering TEMP-2125

    Temp-2125 |Omega TEMP-2125
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    Omega Engineering TEMP-2126

    Temp-2126 |Omega TEMP-2126
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    Omega Engineering TEMP-2121

    Temp-2121 |Omega TEMP-2121
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    EMP212 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EMP212 Excelics Semiconductor MESFET MMICs Original PDF
    EMP-21-220V Needhams Electronics Stand Alone Programmers, Programmers, Development Systems, PROGRAMMER UNIVERSAL DEVICE 220V Original PDF
    EMP212-P1 Excelics Semiconductor 9.5 - 12.0 GHz Power Amplifier MMIC Original PDF
    EMP212-SMP Excelics Semiconductor 9.5 - 12 GHz Power AMPLIFIER MMIC Original PDF

    EMP212 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EMP212

    Abstract: No abstract text available
    Text: EMP212-Q5 9.5 – 12.0 GHz Surface-Mounted PA UPDATED: 04/24/2008 FEATURES • • • • • 9.5 – 12.0 GHz Operating Frequency Range 30 dBm Output Power at 1dB Compression 14.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 19.5dBm 5X5 mm QFN Package


    Original     		EMP212-Q5 -40dBc 800mA) EMP212 EMP212 PDF

    TB 1238

    Abstract: TB 1238 An EMP212-P1 AuSn eutectic
    Text: EMP212-P1 9.5 – 12.0 GHz Power Amplifier MMIC ISSUED DATE: 07-01-04 FEATURES • • • • 9.5 – 12.0 GHz Operating Frequency Range 29.5dBm Output Power at 1dB Compression 16.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 19.5dBm APPLICATIONS


    Original     		EMP212-P1 -40dBc 800mA) TB 1238 TB 1238 An EMP212-P1 AuSn eutectic PDF

    EMP212

    Abstract: No abstract text available
    Text: EMP212 9.50 – 12.0 GHz Power Amplifier MMIC UPDATED 04/04/2008 FEATURES • • • • 9.5 – 12.0 GHz Operating Frequency 30.5dBm Output Power at 1dB Compression 18 dB Typical Power Gain 43dBc OIMD3 @ EACH TONE Pout 19dBm APPLICATIONS • • Point-to-point and point-to-multipoint radio


    Original     		EMP212 43dBc 19dBm 2500um 1600um 800mA) EMP212 PDF

    Rogers-4003

    Abstract: EMP212 EMP212-SMP
    Text: EMP212-SMP 9.5 – 12 GHz Power AMPLIFIER MMIC ISSUED 06/30/2005 VD FEATURES • • • • • 1 9.5 – 12GHz Operating Frequency Range 30dBm Output Power at 1dB Compression 16 dB Typical Small Signal Gain -41dBc OIMD3 @Each Tone Pout 19dBm Small Surface Mount Package


    Original     		EMP212-SMP 12GHz 30dBm -41dBc 19dBm 750mA) 500um. Rogers4003 Rogers-4003 EMP212 EMP212-SMP PDF

    EMP212

    Abstract: EMP-21
    Text: EMP212-Q5 9.5 – 12.0 GHz Surface-Mounted PA FEATURES • • • • • 9.5 – 12.0 GHz Operating Frequency Range 30 dBm Output Power at 1dB Compression 14.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 19.5dBm 5X5 mm QFN Package APPLICATIONS


    Original     		EMP212-Q5 -40dBc 800mA) 10MHz, EMP212 EMP-21 PDF

    transistor b 1238

    Abstract: EMP212 EMP212-P1
    Text: EMP212-P1 9.0 – 12.0 GHz Power Amplifier MMIC UPDATED: 05/15/2008 FEATURES • • • • 9.0 – 12.0 GHz Operating Frequency Range 30.0dBm Output Power at 1dB Compression 16.0 dB Typical Small Signal Gain -40dBc OIMD3 @Each Tone Pout 19.5dBm Excelics


    Original     		EMP212-P1 -40dBc EMP212 800mA) transistor b 1238 EMP212 EMP212-P1 PDF

    EMP212

    Abstract: No abstract text available
    Text: EMP212 9.50 – 12.0 GHz Power Amplifier MMIC UPDATED 11/24/2004 FEATURES • • • • 9.5 – 12.0 GHz Operating Frequency 30.5dBm Output Power at 1dB Compression 17 dB Typical Power Gain 41dBc OIMD3 @ EACH TONE Pout 19dBm APPLICATIONS • • Point-to-point and point-to-multipoint radio


    Original     		EMP212 41dBc 19dBm 2500um 1600um 800mA) EMP212 PDF

    EPA080A-100P

    Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
    Text: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.


    Original     		PDF