MC10H102
Abstract: MC10H105 ECL10KH
Text: E C L 10KH High-Speed Em itter-Coupled Logic Fam ily M C 10H 102/Q uad 2-Inp ut NOR Gate M C 10H 105/T rip le 2 -3 -2 Input O R/N O R Gate Ordering Inform ation Features/B enefits • Propagation delay, 1 ns typical PART NUMBER • Power dissipation 25 mW/gate
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MC10H102/Quad
MC10H105/Triple
MC10H102
MC10H105
ECL10KH
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EM- 102 motor
Abstract: No abstract text available
Text: 27.05.2011 10:40 Seite 135 Information Antriebstechnik_2011_05_27_Finale_EN_:Vorlage VarioDrive C ECI motor 144 BG motor Gear motors BCI motor 140 AC motors Capacitor motors Specifications 137 135 Representatives Shaded-pole motors VARIODRIVE Compact VARIODRIVE
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KM4030-2
F/400
EM- 102 motor
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un224
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Small Signal Transistor Arrays UNA0224 Silicon PNP epitaxial planar type (4 elements) Silicon NPN epitaxial planar type (4 elements) Unit: mm For motor drive 0.2+0.1 –0.0 0.4±0.1 M Di ain sc te
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2002/95/EC)
UNA0224
un224
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BCY59IX
Abstract: bcy59 motorola bcy59 BCY59X bcy58-ix bcy58-vii
Text: MOTORCLA SC XSTRS/R IE E D I F b3b?2S4 00flt.4bfc, T T-M-Äl BCY58 -VII, -Vili, -IX, -X BCY59-VII, -Vili, -IX, -X M A X IM U M R A T IN G S Sym bol BCY 58 BCY 59 Collector-Emitter Voltage VC E O 32 45 Vdc Collector-Emitter Voltage R B E = 10 O hm s VcES
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00flt
BCY58
BCY59-VII,
BCY59,
BCY58/BCY59)
BCY59IX
bcy59 motorola
bcy59
BCY59X
bcy58-ix
bcy58-vii
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gt50j
Abstract: No abstract text available
Text: TOSHIBA GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 5 0 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The 3rd. Generation. • Enhancement-Mode. • High Speed. 2 0.5 MAX. fi 3.3 ±0.2
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GT50J102
2-21F2C
gt50j
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100DU-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov
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CM100DU-12H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM75DU-12H HIGH POWER SWITCHING USE INSULATED TYPE Tc Measured Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov
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CM75DU-12H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov
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CM50DU-24H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov
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CM100DU-24H
-200A/
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM150DU-12H HIGH POWER SWITCHING USE INSULATED TYPE Tc Measured Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov
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CM150DU-12H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200DU-12H HIGH POWER SWITCHING USE INSULATED TYPE Tc Measured Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov
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CM200DU-12H
Dia20
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM400DU-12H HIGH POWER SWITCHING USE INSULATED TYPE T q Measured Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov
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CM400DU-12H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM75DY-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching appli cations. Each module consists of two IGBTs in a half-bridge configu ration with each transistor having
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CM75DY-28H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM300DU-12H HIGH POWER SWITCHING USE INSULATED TYPE T q Measured * Description: H H H it Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of two IGBTs in a half-bridge configuration
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CM300DU-12H
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cm50dy-24e
Abstract: tic 122 TIC 103
Text: b4E D • 7ET4bSl OOOLTlb 4flT «PRX CM50DY-24E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 powerex in c Dual IGBTMOD g S & T ÎG S M O C lU lG
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CM50DY-24E
BP107,
Amperes/1200
CM50DY-24E
tic 122
TIC 103
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM300DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: 3 TYP N— — N -T A B # 1 10 t=0.5 Q —m - h K- i ' I i N -O ü -O lü - -O Low Drive Power □ □ Low VQE(sat) Discrete Super-Fast Recovery Free-Wheel Diode
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CM300DY-24H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE T q Measured Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov
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CM200DU-24H
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM200DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov
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CM200DY-24H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM600HU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: I: I _ I_ I_ II — I I i > \ M p I Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of one IGBT in a single configuration with
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CM600HU-24H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM50TU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor
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CM50TU-24H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM75TU-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor
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CM75TU-12H
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM75BU-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of four IGBTs in an H-Bridge configura tion, with each transistor having a
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CM75BU-12H
-150A/
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM600HU-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Î p i i — f— — w I I i > ' N I G> Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of one IGBT in a single configuration with
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CM600HU-12H
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM400HU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: I Î I I /— r - X I r p t C -* , Mitsubishi IGBT Modules are de signed for use in switching applica tions. Each module consists of one IGBT in a single configuration with
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CM400HU-24H
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