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    EM- 102 MOTOR Search Results

    EM- 102 MOTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67H450AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S580FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=1.6 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S581FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67Z833SFTG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver / 3-Phase Brushless Motor Gate Driver / VVM(V)=-0.3~80 / P-WQFN40-0606-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    EM- 102 MOTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MC10H102

    Abstract: MC10H105 ECL10KH
    Text: E C L 10KH High-Speed Em itter-Coupled Logic Fam ily M C 10H 102/Q uad 2-Inp ut NOR Gate M C 10H 105/T rip le 2 -3 -2 Input O R/N O R Gate Ordering Inform ation Features/B enefits • Propagation delay, 1 ns typical PART NUMBER • Power dissipation 25 mW/gate


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    MC10H102/Quad MC10H105/Triple MC10H102 MC10H105 ECL10KH PDF

    EM- 102 motor

    Abstract: No abstract text available
    Text: 27.05.2011 10:40 Seite 135 Information Antriebstechnik_2011_05_27_Finale_EN_:Vorlage VarioDrive C ECI motor 144 BG motor Gear motors BCI motor 140 AC motors Capacitor motors Specifications 137 135 Representatives Shaded-pole motors VARIODRIVE Compact VARIODRIVE


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    KM4030-2 F/400 EM- 102 motor PDF

    un224

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Small Signal Transistor Arrays UNA0224 Silicon PNP epitaxial planar type (4 elements) Silicon NPN epitaxial planar type (4 elements) Unit: mm For motor drive 0.2+0.1 –0.0 0.4±0.1 M Di ain sc te


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    2002/95/EC) UNA0224 un224 PDF

    BCY59IX

    Abstract: bcy59 motorola bcy59 BCY59X bcy58-ix bcy58-vii
    Text: MOTORCLA SC XSTRS/R IE E D I F b3b?2S4 00flt.4bfc, T T-M-Äl BCY58 -VII, -Vili, -IX, -X BCY59-VII, -Vili, -IX, -X M A X IM U M R A T IN G S Sym bol BCY 58 BCY 59 Collector-Emitter Voltage VC E O 32 45 Vdc Collector-Emitter Voltage R B E = 10 O hm s VcES


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    00flt BCY58 BCY59-VII, BCY59, BCY58/BCY59) BCY59IX bcy59 motorola bcy59 BCY59X bcy58-ix bcy58-vii PDF

    gt50j

    Abstract: No abstract text available
    Text: TOSHIBA GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 5 0 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The 3rd. Generation. • Enhancement-Mode. • High Speed. 2 0.5 MAX. fi 3.3 ±0.2


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    GT50J102 2-21F2C gt50j PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100DU-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


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    CM100DU-12H PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM75DU-12H HIGH POWER SWITCHING USE INSULATED TYPE Tc Measured Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


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    CM75DU-12H PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


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    CM50DU-24H PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM100DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


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    CM100DU-24H -200A/ PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM150DU-12H HIGH POWER SWITCHING USE INSULATED TYPE Tc Measured Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


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    CM150DU-12H PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM200DU-12H HIGH POWER SWITCHING USE INSULATED TYPE Tc Measured Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


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    CM200DU-12H Dia20 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM400DU-12H HIGH POWER SWITCHING USE INSULATED TYPE T q Measured Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


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    CM400DU-12H PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM75DY-28H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching appli­ cations. Each module consists of two IGBTs in a half-bridge configu­ ration with each transistor having


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    CM75DY-28H PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM300DU-12H HIGH POWER SWITCHING USE INSULATED TYPE T q Measured * Description: H H H it Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration


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    CM300DU-12H PDF

    cm50dy-24e

    Abstract: tic 122 TIC 103
    Text: b4E D • 7ET4bSl OOOLTlb 4flT «PRX CM50DY-24E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 powerex in c Dual IGBTMOD g S & T ÎG S M O C lU lG


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    CM50DY-24E BP107, Amperes/1200 CM50DY-24E tic 122 TIC 103 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM300DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: 3 TYP N— — N -T A B # 1 10 t=0.5 Q —m - h K- i ' I i N -O ü -O lü - -O Low Drive Power □ □ Low VQE(sat) Discrete Super-Fast Recovery Free-Wheel Diode


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    CM300DY-24H PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM200DU-24H HIGH POWER SWITCHING USE INSULATED TYPE T q Measured Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


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    CM200DU-24H PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM200DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recov­


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    CM200DY-24H PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM600HU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: I: I _ I_ I_ II — I I i > \ M p I Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of one IGBT in a single configuration with


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    CM600HU-24H PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM50TU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor


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    CM50TU-24H PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM75TU-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor


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    CM75TU-12H PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM75BU-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of four IGBTs in an H-Bridge configura­ tion, with each transistor having a


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    CM75BU-12H -150A/ PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM600HU-12H HIGH POWER SWITCHING USE INSULATED TYPE Description: Î p i i — f— — w I I i > ' N I G> Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of one IGBT in a single configuration with


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    CM600HU-12H PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI IGBT MODULES CM400HU-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: I Î I I /— r - X I r p t C -* , Mitsubishi IGBT Modules are de­ signed for use in switching applica­ tions. Each module consists of one IGBT in a single configuration with


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    CM400HU-24H PDF