Untitled
Abstract: No abstract text available
Text: Application Note Power Modules with Phase-Change Material Handling of Power Modules with Pre-Applied Phase-Change Material Application Note no.: AN_2012-07_001-v01 Table of Contents Re v is i on h is to r y: . 3
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001-v01
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Untitled
Abstract: No abstract text available
Text: Thermal Considerations Overview Sim plified therm al m anagem ent is one o f the benefits o f using V icor converters. H igh operating efficiency m inim izes heat loss, and the low profile package features an easily accessible, electri cally isolated therm al interface surface.
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V1-260-CV
I-220-M
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MCA45T
Abstract: capacitor philips ll
Text: bSE D ai 7110ñEb □ 0bE72cì 4^5 H PHIN PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile
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711002b
BLU30/28
BLU30/28
OT119)
711Dfl5b
0Db2735
MCA45T
capacitor philips ll
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capacitor 104 PF disc
Abstract: transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331
Text: N AMER PHI LIPS/DISCRETE bTE T> m bb53^B]> 0028832 TD7 • IAPX BLU30/28 J l UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile
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BLU30/28
BLU30/28
OT119)
capacitor 104 PF disc
transistor T43
B52 transistor
transistor d 1991 ar
D 1991 AR
apx 188
Transistor 5331
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4312 020 36640
Abstract: ferroxcube wideband hf choke
Text: PHILIPS INTERNAT ION AL b5E D 751 I IPHIN Ei 711002b BLV75/12 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile
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711002b
BLV75/12
OT-119)
4312 020 36640
ferroxcube wideband hf choke
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Untitled
Abstract: No abstract text available
Text: WDBR SER IES 7 f Ì^ C ÌT O / 7 / C S ULTRA LOW PROFILE DYNAMIC BRAKING/POWER RESISTORS • • • • • • Simple construction, lower installation cost 2kW and 5kW versions Failsafe Low inductance UL and IP approval pending Enables reduction in overall product size
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DC-340
Abstract: No abstract text available
Text: m electronics WDBR SERIES ULTRA LOW PROFILE DYNAMIC BRAKING/PO W ER RESISTORS Simple construction, lower installation cost 2kW and 5kW versions Failsafe Low inductance UL and IP approval pending Enables reduction in overall product size This new range of thick film on steel planar power resistors offers high pulse withstand capability,
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BFQ26
Abstract: BFQ268
Text: Philips Components bfq268 _ j \ _ NPN HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR NPN silicon epitaxial transistor w ith em itter ballasting resistors and a gold sandwich metallization to ensure optim um temperature profile and excellent reliability properties. It features high break-down
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bfq268
BFQ26
OT172A1.
8-32UNC
7Z86903
M90-1192/Y
BFQ268
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TRANSISTOR b77
Abstract: 4312.020 transistor tt 2222 BLV92
Text: PHILIPS INTERNATIONAL bSE J> WM 711DöSb DDb303S 50T BLV92 J U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use In mobile radio transmitters In the 9 0 0 M H z communications band. Features: • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile
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BLV92
OT-171)
TRANSISTOR b77
4312.020
transistor tt 2222
BLV92
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LTE21009R
Abstract: SC15
Text: Philips Semiconductors Product specification NPN microwave power transistor LTE21009R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors PIN • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temperature profile
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LTE21009R
OT440A
OT440A.
LTE21009R
SC15
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Untitled
Abstract: No abstract text available
Text: T e m ic BPX99R .S e ni i c » n il u i i Silicon Darlington Phototransistor Description BPX99R is an extra high sensitive monolithic silicon epi taxial planar Darlington phototransistor in a hermetically sealed low profile TO—16 metal case. The solid metal base allows the user to mount the device
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BPX99R
BPX99R
O--16
5-Jul-96
15-Jul-96
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BFQ234
Abstract: BFQ25 BFQ254 transistor YA
Text: Philips Components bfq254 _ J >- PNP HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP silicon epitaxial transistor w ith em itter ballasting resistors and a gold sandwich metallization to ensure optim um temperature profile and excellent reliability properties. It features high break-down
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bfq254
BFQ234.
BFQ25
OT172A1.
8-32UNC
M90-1191/Y
BFQ234
BFQ254
transistor YA
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BLV2045
Abstract: smd TRANSISTOR F2 629 08223
Text: Philips Semiconductors Product specification UHF power transistor BLV2045 FEATURES PINNING - SOT39QA • E m itter ballasting resistors fo r optim um tem perature profile PIN • Gold m etallization ensures excellent reliability • Internal input and output m atching to achieve high
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BLV2045
OT390A
MGD255
OT39QA.
BLV2045
smd TRANSISTOR F2
629 08223
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transistor smd ba rn
Abstract: sot494
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 FEATURES PINNING - SOT494A • Em itter ballasting resistors fo r optim um te m perature profile PIN SYMBOL 1 c
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IS-95.
BLV2048
OT494A
SCA61
/printrun/ed/pp15
transistor smd ba rn
sot494
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 FEATURES PINNING - SOT494A • Em itter ballasting resistors fo r optim um te m perature profile PIN SYMBOL 1 c
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IS-95.
BLV2048
OT494A
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2222-809-05002
Abstract: philips e3 Philips Electrolytic Capacitor 16v BLU60-12 B6PN
Text: PHILIPS INTERNAT IO NAL bSE D E3 7110ÖSb DDLE7S1 =131 BLU60/12 l U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile.
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711002b
OT-119
BLU60/12
2222-809-05002
philips e3
Philips Electrolytic Capacitor 16v
BLU60-12
B6PN
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wr48t12
Abstract: WR24T05-12/55K WR24T05-15/55K computer products wr24t05 12V5A
Text: WR-K SERIES Single, dual and triple output Recom m ended for new design-ins • ■ ■ ■ ■ ■ ■ Low profile - 0.91 inch high Efficiencies to 84% UL approved Single outputs 2:1 input range PCB or chassis mounting Pi input filter OVP on all outputs
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100kHz.
--------14-t
wr48t12
WR24T05-12/55K
WR24T05-15/55K
computer products wr24t05
12V5A
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transistor tt 2222
Abstract: International Power Sources TT 2222 BLV93
Text: PHILIPS INTER N A T I O N A L bSE D H TllOÖSb DDb3043 3öb BLV93 J U.H.F. POW ER TRA N SISTO R N-P-N silicon planar epitaxial transistor prim arily intended for use in m obile radio transm itters in the 9 0 0 M H z co m m u n ica tio n s band. Features: • multi-base structure and em itter-ballasting resistors fo r an op tim u m tem perature profile
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DDb3043
BLV93
OT-171)
transistor tt 2222
International Power Sources
TT 2222
BLV93
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resistor MR25
Abstract: transistor tt 2222 resistor MR25 philips philips MR25 MR25 resistor led MR25 MR25 TT 2222 philips resistor mr25 MR25 resistors
Text: N AMER PH IL IP S/ DIS CRE TE bTE D m ^53 ^ 3 1 002001b fibM I IAPX BLU20/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile
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002001b
BLU20/12
OT-119)
7Z92837
7Z92838
resistor MR25
transistor tt 2222
resistor MR25 philips
philips MR25
MR25 resistor
led MR25
MR25
TT 2222
philips resistor mr25
MR25 resistors
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Untitled
Abstract: No abstract text available
Text: CA 25 25 S e rie s to to 40 W a tts 4 0 W a t t s - C A S e r ie s Ultra Wide Input Voltage Range, Low Profile F eatures Ultra-Wide Input Voltage Range 4 :1 1 LC Input Filter for Low Reflected Ripple Current Regulated Outputs Thermal Shutdown with Auto-Recovery
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74T12-30
74T15-30
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Untitled
Abstract: No abstract text available
Text: WR-K SERIES Single, dual and triple output Recommended for new design-lns • ■ ■ ■ ■ ■ ■ Low profile - 0.91 inch high Efficiencies to 84% UL approved Single outputs 2:1 input range PCB or chassis mounting Pi input filter OVP on all outputs 2
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B303D
Abstract: TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor
Text: b5E » H 71106Eb D0b3DEÛ 07T « P H I N BLV91/SL PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.
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BLV91/SL
OT-172D)
711005b
DGb3034
BLV91/SL
B303D
TT 2222 npn
transistor tt 2222
transistor npn 2xi
transistor sot t06
FTC 960
trimmer PT 10
TT 2222
ka band transistor
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Nippon Chemi-Con lxf capacitor
Abstract: NFC40-24T05-12 LXF SERIES NIPPON CHEMI-CON Nippon Chemi-Con lxf NFC40-24S05-M nippon lxf nippon lxf series LXF Series NFC40-48S15 Nippon Chemi-Con sxe capacitor
Text: ARTESYHM Y* E C H N O L O B> WQg I I NFC40 SERIES Single and triple output E S • • • • • • • • Providing 40W o f po w e r in a 2.2 x 2.2 x 0.5 inch package, the highly specified NFC40 Series o f DC/DC converters were designed w ith today's dem anding applications in
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NFC40
NFC40.
NFC40-HTSK-S
NFC40-48S12-MY
NFC40-48S12-1Y
Nippon Chemi-Con lxf capacitor
NFC40-24T05-12
LXF SERIES NIPPON CHEMI-CON
Nippon Chemi-Con lxf
NFC40-24S05-M
nippon lxf
nippon lxf series
LXF Series
NFC40-48S15
Nippon Chemi-Con sxe capacitor
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Heatsink For stud devices
Abstract: EM HEATSINK PROFILE
Text: pow er assem blies heatsinks The stan d ard range of heatsinks is shown with a brief resum é of their characteristics. They are intended for use with all our power semiconductors - from the small stud base through to large disc devices and modules. All heatsinks are suitable for
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100mm
Heatsink For stud devices
EM HEATSINK PROFILE
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