Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS E xtrem ely Low Im pedance, High R eliability Low Impedance Long Life Anti-Solvent Feature {Through 100V only i High reliability withstanding 5000hour load life at +105°C 3000/2000hours for smaller case sizes as specified below).
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5000hour
3000/2000hours
120Hz,
ma10X15
10X20
16X25
10X15
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PM 438 BL
Abstract: L200k CVS1000
Text: ALUMINUM ELECTROLYTIC CAPACITORS PM xticKicoxi Extrem ely Low Im pedance, High Reliability Low Impedance Long Life Anti-Solvent Feature Through 100V only • High reliability withstanding 5000hour load life at +105°C (3000/2000hours for sm aller case sizes as specified below).
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5000hour
3000/2000hours
55--M05
40--HOS
120Hz,
10X12
10X15
PM 438 BL
L200k
CVS1000
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PDF
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marconi
Abstract: No abstract text available
Text: M ARCO NI A.C. M AINS VALVES 1 MS 4, Screen Grid, 22/6 Marconi MS.4 is a " general purpose " screen grid valve for universal use. Possessing an extrem ely low capacity— less than .002 micro-micro farad — it ensures stable amplification where high conductance valves will not
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V01TS
70MAX
marconi
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PDF
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PY 472 M
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS E xtrem ely Low Im pedance, High R eliability Long Life Low Impedance Anti-Solvent Feature i Same case size as PF series, but extremely low impedance as little as 1/2 or PF series, i High reliability withstanding 5000 hours load life at +105°C 3000/2000 hours for smaller
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120Hz,
16X31
16X35
16X40
18X40
10X12
10X15
16X15
PY 472 M
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Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS PL Extremely Low Impedance, High Reliability Low Impedance Long Life • Same case sizes as PF series, but extrem ely lo w im pedance as little as 1 /2 of PF series • High reliability w ith sta n ding BOOOhour load life at + 1 0 5 °C 3000/2000hours for smaller
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3000/2000hours
120Hz,
16X40
18X40
10X15
16X15
18X15
16X20
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PDF
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Untitled
Abstract: No abstract text available
Text: ALUMINUM ELECTROLYTIC CAPACITORS PL n îc liic o n Extremely Low impedance, High Reliability series • Sa m e case size as P F series, but extrem ely low im pedance as little as 1/2 or P F series. • High reliability withstanding 5000 hours load life at + 1 0 5 ”C 3 0 0 0 /2 0 0 0 hours for sm aller
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120Hz,
10X12
10X15
16X15
18X15
16X20
16X25
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PDF
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gal20v8qs
Abstract: GAL20V8QS-15LNC GAL20V8S gal programming algorithm GAL20V8QS-10L cs 2648 GAL20V8QS15LMI WGB 03 HL 006 pAL programming Guide GAL20V8QS10LNC
Text: GAL20V8QS-10L, -15L 24-Pin 0.8ja EECMOS PLDs General Description Features T h e EECM OS G A L20V8Q S devices are fabricated using N atio n a l’s C S80BEV 0.8/x E lectrically E rasable CM O S pro cess. This advanced p rocess m akes N ational's G A L20V 8Q S extrem ely la st, allow ing contro lle d output
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GAL20V8QS-10L,
24-Pin
GAL20V8QS
CS80BEV
Cep-01451.
GAL20V8QS-15LNC
GAL20V8S
gal programming algorithm
GAL20V8QS-10L
cs 2648
GAL20V8QS15LMI
WGB 03 HL 006
pAL programming Guide
GAL20V8QS10LNC
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PDF
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NEC RDRAM
Abstract: R135 ATA121 LN370 IEU-1401 REF05
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 8M-BIT Rambus DRAM 1M-WORD X 8-BIT X 1-BANK D escription The 8-M egabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 1M w ords by 8 bits and capable o f bursting up to 256 bytes o f data at 2 ns per byte. The use of Rambus Signaling
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P32G6-
NEC RDRAM
R135
ATA121
LN370
IEU-1401
REF05
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PDF
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mcr 5102
Abstract: AZ-155-1 UPL 2040
Text: n ic liic o n ALUMINUM ELECTROLYTIC CAPACITORS E x tre m e ly L o w Im p e d a n c e , H ig h R e lia b ility a series Low Impedance Long Life Anti-Solvent Feature • S a m e c a s e s ize a s P F s eries , but e xtre m ely low im p e d a n c e a s little a s 1 /2 or P F series.
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120Hz,
16X15
18X15
16X20
16X25
18X20
16X31
18X25
16X35
mcr 5102
AZ-155-1
UPL 2040
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PDF
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IC-451
Abstract: IC451 IC-455 IC-420 IC-435 IC456 9013 C IC421 IC-453 IC454
Text: T3P Tim ely Test Tool with Probe-pi * - HJ y V ft 77, h*V*rv h m a- a r? I i ^ e T I vs T VI' VÎ ^ Ve V£ T * Q » % Kf r í 5 * si C* üi Q MH S SB ? •w §□ K w ví 3 mQ d a I * C W 3fi S' W § & a Tÿ ol y ff 35 W ví i* ÒJ Hl rí H 3 Vi h£ «*
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83Tower
2005ip12Â
IC-451
IC451
IC-455
IC-420
IC-435
IC456
9013 C
IC421
IC-453
IC454
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PDF
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FeRAM
Abstract: MN63Y1002D01 proximity card ferroelectric IR-700
Text: Panasonic RF-ID Card MN63Y1002D01 with 1120-bit Ferroelectric Nonvolatile Memory I Overview M N 63Y 1002D 01 is a com plete radio frequency transponder subsystem that fits into a card package for ease of use and versatility. W ith 1120 bits of high speed ferroelectric m em ory FeR A M and all necessary analog and
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MN63Y1002D01
1120-bit
1024-bit
IR-700
56MHz
FeRAM
proximity card
ferroelectric
IR-700
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PDF
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MN63Y1002D01
Abstract: Proxim ELY 1120
Text: Panasonic RF-ID Card MN63Y1002D01 with 1120-bit Ferroelectric Nonvolatile Memory I Overview M N 63Y 1002D 01 is a com plete radio frequency transponder subsystem that fits into a card package for ease of use and versatility. W ith 1120 bits of high speed ferro electric m em ory FeR A M and all necessary analog and
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MN63Y1002D01
1120-bit
1002D
N63Y1002D01
IR-700
Proxim
ELY 1120
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PDF
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GP1250
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No. HVGP-1000-1B 1 HIGH VOLTAGE DIODE RECTIFIERS MECHANICAL SPECIFICATION FEATURES Proprietary "Soft Glass w " P/N junction passivation
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HVGP-1000-1B
P1120-G
P1500
DO-15
DO-41
DO-41
20rge
GP1250
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PDF
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uv flame sensor
Abstract: thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J
Text: PHYSICAL AND ELECTRONIC PROPERTIES OF SILICON CARBIDE The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices. A summary of the most impor
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2771J
161-IMO
uv flame sensor
thermal conductivity sensor
27713
4h sic
ballistic sensor
Cree Microwave
cree package structure
X 1017
sac 326
2771J
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PDF
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Untitled
Abstract: No abstract text available
Text: OHMITE PCA-PCD Models M anufacturing Com pany O hm itror Solid State Power And M otor S peed Controls Features_ _ • AC and DC o utp ut types. • Component styles • O n-O ff sw itch built in. • Convenient small size 1KW or 2KW ratings.
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PCA-1020
PCD-1000
PCD-1020)
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PDF
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Untitled
Abstract: No abstract text available
Text: M IC R O N I m - n u iN M T12D136 1 MEG X 36, 2 MEG X 18 DRAM M ODULE 1 MEG X 36, 2 MEG X 18 DRAM MODULE NEW I FAST PAGE MODE MT12D136 LOW POWER, EXTENDED REFRESH (MT12D136 L) FEATURES PIN ASSIGNMENT (Top View) OPTIONS 72-Pin SIMM (T-19) MT12D136M/G o MARKING
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T12D136
024-cy
MT12D136
MT120136
C1992,
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PDF
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SN5524
Abstract: logicgate SN5522
Text: SYSTEMS INTERFACE CIRCUITS SERIES 5520 SENSE AM PLIFIERS B U L L E T I N N O . D L -S 7 3 1 1 7 9 9 , J U L Y 1 9 7 3 F U L L M I L IT A R Y T E M P E R A T U R E R A N G E H IG H -SPEED S EN S E A M P L IF IE R S FO R C O N V E R S IO N O F C O IN C ID E N T -C U R R E N T M E M O R Y R E A D O U T T O S A T U R A T E D D IG IT A L-LO G IC L E V E L S
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100-mil
SN5524
logicgate
SN5522
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PDF
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IC451
Abstract: IC-451 IC-420 IC430 IC421
Text: T3P T im e ly Test Tool with Probe-pins C a r t r i d g e - t y p e Test C o n t a c t o r T3P T im e ly Test Tool w ith Probe-pins A revolutionary cartridge-type test contactor, T3R features not only high contact reliability but also short lead-time, usability and competitive price.
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OCR Scan
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of01/02
IC451
IC-451
IC-420
IC430
IC421
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PDF
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ELY 1120
Abstract: No abstract text available
Text: GMM764421OCT/TG-6/7 LG Semicon Co.,Ltd. 4,194,304 W O R D S x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The G M M 7 6 4 4 2 1OCT/TG is an 4M x 64 bits EDO D ynam ic R A M M O D U L E w hich is assem bled 16 pieces o f 4M x 4bit EDO D R A M s in 24 pin T SO P tl package, tw o
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GMM7644210CT/TG
16bit
48pin
GMM764421OCT/TG-6/7
1111111HH1
ELY 1120
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PDF
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NDS8928
Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT Dual N & P-Channel MOSFET
Text: July 1996 N N D S8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features T hese dual N -a n d P -C hannel en h an c em en t m ode p o w er field effect transistors are produ ced using N ational's proprietary, high cell density, DMOS
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NDS8928
NDS8928
0D33347
Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4
P-channel AND N-Channel power mosfet SO-8 ENHANCEMENT
Dual N & P-Channel MOSFET
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PDF
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Untitled
Abstract: No abstract text available
Text: J u ly 1 9 9 6 N NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features T hese d u al N -a n d P -C hannel e n h a n c e m e n t m o d e p o w er field effect transistors are prod u ced using N ational's proprietary, high cell density, DMOS
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NDS8928
NDS8928
193tQ
|
PDF
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16Oi
Abstract: 30FQ 30FQ030 30FQ030A 30FQ035 30FQ035A 30FQ040 30FQ040A 30FQ-A DO-203AA
Text: INTERNATIONAL RECTIFIER 4855452 ~BB ^ | M f l S S 4 S E DODSDTl h 55C 0 5 0 9 1 INTERNATIONAL RECTIFIER D Data Sheet No. PD-2.039B INTERNATIONAL RECTIFIER IOR 30FQ & 30FQ-A SERIES 3 0 Amp Schottky Power Rectifiers Description/Features Major Ratings and Characteristics
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30FQ-A
16Oi
30FQ
30FQ030
30FQ030A
30FQ035
30FQ035A
30FQ040
30FQ040A
DO-203AA
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PDF
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Untitled
Abstract: No abstract text available
Text: FUJITSU M I C R O E L E C T R ON I C S FU JITSU 374ma 23E D E e Ä i6 3 8 4 ^ B I’^ Ä i BIPOLAR,RANDOM^ ES M GOOöSbS 4 M BM 10480A-8 è i ; «• m - % May 1988 Edition 1.0 - r v o s 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM10480A 1$ a fully decoded 16384-blt ECL read/w rite random access
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OCR Scan
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374ma
0480A-8
16384-BIT
MBM10480A
16384-blt
DIP-20C-C03)
374i7b2
MBM10480A-8
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PDF
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KS0065B
Abstract: 8652 ks00658 KS0065 sc 4145 CI 7425 KS0065b lcd 1414a 142 LTACH KS0066
Text: KS0065B CMOS DIGITAL INTEGRATED CIRCUIT 40-CHANNEL SEGMENT/COMMON DRIVER FOR DOT MATRIX LCD 60 Q FP The K S 0 0 6 5 B is a L C D driver LSI w hich is fabricated by low power C M O S technology. Bascially this LSI co nsists of 20 x 2bit bidrectional shift register, 20 x 2bit data latch ad 20 x 2 bit driver,
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KS0065B
40-CHANNEL
KS0065B
60-QFP-U14A
64-QFP-1420D
80-QFP-1420A
0D220bfl
98-STAB-35mm
220bti
55N555555
8652
ks00658
KS0065
sc 4145
CI 7425
KS0065b lcd
1414a 142
LTACH
KS0066
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PDF
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