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    ELPIDA GDDR3 Search Results

    ELPIDA GDDR3 Datasheets Context Search

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    EDE2116ACBG

    Abstract: EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F
    Text: SELECTION GUIDE DRAM Selection Guide Document No. E1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM Selection Guide CONTENTS 1. DDR3


    Original     		PDF E1610E30 240-pin M01E0706 EDE2116ACBG EDJ2116DASE ECM220ACBCN ELPIDA EDJ2116DASE EDE1116AGBG EDE2116ACBG-1J-F GDDR5 EDJ1108DBSE-GN-F ELPIDA lpddr EDE1116AGBG-1J-F

    GDDR5

    Abstract: Elpida GDDR5 GDDR5 pcb layout BGA-78 gddr5 controller E1600E10 GDDR5 layout Elpida GDDR3 GDDR5 application note POD-15
    Text: USER’S MANUAL Introduction To GDDR5 SGRAM Document No. E1600E10 Ver. 1.0 Date Published March 2010 (K) Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 INTRODUCTION Intended Audience This manual is intended for users who design application systems using Graphics Double Data Rate 5 (GDDR5) Synchronous


    Original     		PDF E1600E10 M01E0706 GDDR5 Elpida GDDR5 GDDR5 pcb layout BGA-78 gddr5 controller E1600E10 GDDR5 layout Elpida GDDR3 GDDR5 application note POD-15

    EDJ2116DASE

    Abstract: EDE2116ACBG ECM220ACBCN ELPIDA EDJ2116DASE EDJ1108DBSE EDE1032AGBG GDDR5 EDX1032BASE DDR3-1333H EDE1116AGBG
    Text: セレクションガイド DRAM セレクションガイド Document No. J1610E30 Ver.3.0 Date Published March 2010 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2010 DRAM セレクションガイド 目 次 1. DDR3


    Original     		PDF J1610E30 240-pin EDU1032AABG 136-FBGA M01J0706 TEL033281-1563 TEL066390-8727 EDJ2116DASE EDE2116ACBG ECM220ACBCN ELPIDA EDJ2116DASE EDJ1108DBSE EDE1032AGBG GDDR5 EDX1032BASE DDR3-1333H EDE1116AGBG

    Rambus XDR

    Abstract: DDR3-1333 XDR Rambus DDR2 x32 ELPIDA DDR3 XDR DRAM DDR2-667 DDR2-800 DDR333 DDR400
    Text: XDR DRAM Industry demand for memory bandwidth in next-generation digital consumer electronics, such as high-definition digital television, home servers and high-end 3-D graphics applications, is growing rapidly as more content becomes available and as processor performance becomes more robust.


    Original     		PDF 512Mb x16-bit GDDR3-1600 DDR3-1333 64MB/system DDR2-667 DDR2-1066 Rambus XDR DDR3-1333 XDR Rambus DDR2 x32 ELPIDA DDR3 XDR DRAM DDR2-667 DDR2-800 DDR333 DDR400

    RFU20

    Abstract: G72M sc413 BLM18PG181SN1D nvidia g72m 7SH02 nvidia MXM MXM CONNECTOR G72M-V quanta computer
    Text: 5 4 D 3 2 CH-A NVIDIA PCI-E x16 CH-B FCBGA 820pin MXM CONNECTOR D VRAM GDDR3 8Mx32 16Mx32 Page8 Channel C is available on G73M only CRT C VRAM GDDR3 8Mx32 16Mx32 Page7 G72M G73M TV 1 C LVDS Page3 ~ 6 2.5V B B 3.3V Page2 VIN VCORE VRM VCORE 1.8V VRM 1.8V Page9


    Original     		PDF 8Mx32 16Mx32 820pin NONPHY-X16 FG-13X91-20-230P H-C236D118P2 RFU20 G72M sc413 BLM18PG181SN1D nvidia g72m 7SH02 nvidia MXM MXM CONNECTOR G72M-V quanta computer

    DDR3-1333

    Abstract: DDR2-1066 ASIC XDR Rambus 104-FBGA DDR2-667 DDR2-800 DDR333 DDR400 ddr3 1333
    Text: XDR DRAM 最新の高性能グラフィックスや高画質HDTV対応のホームサーバなど、先端の3D画像や高精細なデジタル 画像を扱うデジタル家電市場で、膨大なデータを瞬時に処理できるメモリの需要が高まっています。


    Original     		PDF 512Mb 512Mb x16I/ODRAM6 400MHz, 500MHz, 600MHz I/ODRSL200V DDR333 104FBGA DDR2-667 DDR3-1333 DDR2-1066 ASIC XDR Rambus 104-FBGA DDR2-800 DDR333 DDR400 ddr3 1333

    Qualcomm MSM7225

    Abstract: GTM382 LTN121AT01-1 TS-L633 MSM7225 samsung dl6 TCC3110 NVIDIA geforce 5200 WD3200BEVT LTN121W1-L03
    Text: - 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 - This Document can not be used without Samsung's authorization - 2. Introduction and Specification 2-1. Instroduction High Performance Note PC     High Performance with Intel Core 2 Duo Processor and DDR II Memory


    Original     		PDF X4500 JODD500 Qualcomm MSM7225 GTM382 LTN121AT01-1 TS-L633 MSM7225 samsung dl6 TCC3110 NVIDIA geforce 5200 WD3200BEVT LTN121W1-L03

    DDR2 x32

    Abstract: GC14 K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 t8n 800 ELPIDA DDR User
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.0 January 2004 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4J55323QF-GC 256Mbit 32Bit K4J55323QF-GC12 K4J55323QF-GC14/16/20 DDR2 x32 GC14 K4J55323QF-GC K4J55323QF-GC14 K4J55323QF-GC16 t8n 800 ELPIDA DDR User

    DDR2 x32

    Abstract: GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.7 January 2005 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4J55323QF-GC 256Mbit 32Bit K4J55323QF-G DDR2 x32 GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N

    K4J55323QF-GC20

    Abstract: K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 gddr3 Gl WL02 A/SAMSUNG GDDR3
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM Revision 1.8 April 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4J55323QF-GC 256Mbit K4J55323QF-GC20 K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 gddr3 Gl WL02 A/SAMSUNG GDDR3

    K4J55323QF-GC20

    Abstract: K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 DDR2 x32 ELPIDA ddr2 RAM
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.3 June 2004 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4J55323QF-GC 256Mbit 32Bit -GC12 20very K4J55323QF-GC20 K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 K4J55323QF-GC16 DDR2 x32 ELPIDA ddr2 RAM

    Untitled

    Abstract: No abstract text available
    Text: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.2 February 2004 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4J55323QF-GC 256Mbit 32Bit K4J55323QF-GC12 K4J55323QF-Max

    Untitled

    Abstract: No abstract text available
    Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.4 / Apr. 2004


    Original     		PDF HY5RS573225F 8Mx32) HY5RS573225 240ohm 240ohms

    ELPIDA DDR User

    Abstract: No abstract text available
    Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5RS573225AFP 8Mx32) HY5RS573225AFP 500/600MHz 3XOOHG/RZWR9664 ELPIDA DDR User

    Untitled

    Abstract: No abstract text available
    Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.6 / Oct. 2004


    Original     		PDF HY5RS573225F 8Mx32) 240ohm 240ohms

    HY5RS573225AFP-14

    Abstract: 11mmx14mm HY5RS573225AFP-16 136ball HY5RS573225AFP HY5RS573225AFP-12 hynix gddr3 hy5rs573225afp-11
    Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5RS573225AFP 8Mx32) 500/600MHz HY5RS573225AFP-14 11mmx14mm HY5RS573225AFP-16 136ball HY5RS573225AFP HY5RS573225AFP-12 hynix gddr3 hy5rs573225afp-11

    136ball

    Abstract: HY5RS573225AFP2 HY5RS573225AFP samsung k9 derating HY5RS573225AFP-11
    Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5RS573225AFP 8Mx32) 500/600MHz 136ball HY5RS573225AFP2 HY5RS573225AFP samsung k9 derating HY5RS573225AFP-11

    HY5RS573225F

    Abstract: HY5RS573225F-12 HY5RS573225F-13 HY5RS573225F-14 HY5RS573225F-15 HY5RS573225F-16 HY5RS573225F-18 HY5RS573225F-20 ELPIDA DDR User
    Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.6 / Oct. 2004


    Original     		PDF HY5RS573225F 8Mx32) 240ohm 240ohms HY5RS573225F HY5RS573225F-12 HY5RS573225F-13 HY5RS573225F-14 HY5RS573225F-15 HY5RS573225F-16 HY5RS573225F-18 HY5RS573225F-20 ELPIDA DDR User

    HY5RS123235

    Abstract: ELPIDA DDR User BA2-H10
    Text: HY5RS123235F 512M 16Mx32 GDDR3 SDRAM HY5RS123235F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5RS123235F 16Mx32) HY5RS123235F HY5RS123235 ELPIDA DDR User BA2-H10

    Untitled

    Abstract: No abstract text available
    Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5RS573225F 8Mx32) 1HY5RS573225F 240ohm 240ohms

    Untitled

    Abstract: No abstract text available
    Text: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5RS573225AFP 8Mx32) 500/600MHz

    HY5RS573225FP-2

    Abstract: No abstract text available
    Text: HY5RS573225F P 256M (8Mx32) GDDR3 SDRAM HY5RS573225F(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5RS573225F 8Mx32) 1HY5RS573225F HY5RS573225 240ohm 240ohms HY5RS573225FP-2

    HY5RS573225F

    Abstract: HY5RS573225F-12 HY5RS573225F-13 HY5RS573225F-14 HY5RS573225F-15 HY5RS573225F-16 1600-Mbps
    Text: HY5RS573225F 256M 8Mx32 GDDR3 SDRAM HY5RS573225F This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5RS573225F 8Mx32) 1HY5RS573225F 240ohm 240ohms HY5RS573225F HY5RS573225F-12 HY5RS573225F-13 HY5RS573225F-14 HY5RS573225F-15 HY5RS573225F-16 1600-Mbps

    HY5RS573225FP-2

    Abstract: winbond HY5RS573225F DQ243 HY5RS573225FP POD18
    Text: HY5RS573225F P 256M (8Mx32) GDDR3 SDRAM HY5RS573225F(P) This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.


    Original     		PDF HY5RS573225F 8Mx32) 1HY5RS573225F HY5RS573225 240ohm 240ohms HY5RS573225FP-2 winbond DQ243 HY5RS573225FP POD18