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    AS8S512K3

    Abstract: No abstract text available
    Text: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface


    Original     		PDF AS8S2M32PEC 2Mx32 M0-47AE AS8S2M32 AS8S2M32PEC AS8S512K3

    HIP-66

    Abstract: No abstract text available
    Text: FLASH AS8FLC1M32 FIGURE 1: PIN ASSIGNMENT Top View Hermetic, Multi-Chip Module (MCM) 32Mb, 1M x 32, 3.0Volt Boot Block FLASH Array Available via Applicable Specifications: • MIL-PRF-38534, Class H FEATURES • • • • • • • • • • • •


    Original     		PDF AS8FLC1M32 MIL-PRF-38534, 64Kbyte 1Mx32, AS8FLC1M32B HIP-66

    Untitled

    Abstract: No abstract text available
    Text: SDRAM AS4SD2M32 512K x 32 x 4 Banks 64-Mb PIN ASSIGNMENT (Top View) Synchronous SDRAM 86-Pin TSOPII FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 512K x 32 x 4 banks • Fully synchronous; all signals registered on positive


    Original     		PDF AS4SD2M32 64-Mb) 133MHz TSOPII-86LD -40oC -55oC 125oC AS4SD2M32

    IS61WV51232BLL-10BLI

    Abstract: IS61WV51232BLL IS64WV51232BLL IS61WV51232 IS64WV51232BLL-10BA3
    Text: IS61WV51232ALL/ALS IS61WV51232BLL/BLS IS64WV51232BLL/BLS 512K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater


    Original     		PDF IS61WV51232ALL/ALS IS61WV51232BLL/BLS IS64WV51232BLL/BLS IS61WV51232Axx) IS61/64WV51232Bxx) 90-ball IS61WV51232BLL-10BI IS61WV51232BLL-10BLI IS61WV51232BLL-10BLI IS61WV51232BLL IS64WV51232BLL IS61WV51232 IS64WV51232BLL-10BA3

    Untitled

    Abstract: No abstract text available
    Text: CMS4A32LAx–75Ex 128M 4Mx32 Low Power SDRAM Revision 0.6 May. 2007 Rev. 0.6, May. ‘07 CMS4A32LAx–75Ex Document Title 128M(4Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1


    Original     		PDF CMS4A32LAxâ 4Mx32) 160ns 350uA 400uA

    MSM5432128

    Abstract: No abstract text available
    Text: Pr E2L0045-17-Y1 el im DESCRIPTION The MSM5432126/8 is a new generation Graphics DRAM organized in a 131,072-word ¥ 32-bit configuration. The technology used to fabricate the MSM5432126/8 is OKI's CMOS silicon gate process technology. The device operates with a single 5 V power supply.


    Original     		PDF E2L0045-17-Y1 MSM5432126/8 072-word 32-bit 32-bit MSM5432128 64-pin SSOP64-P-525-0

    gw 360

    Abstract: No abstract text available
    Text: EDI2GG432128V 4x128Kx32 Synchronous SRAM CARD EDGE DIMM FEATURES • 4x128Kx32 Synchronous The EDI2GG432128VxxD is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts Module, organized as 4x128Kx32. The Module contains four (4) Synchronous Burst Ram Devices,


    Original     		PDF EDI2GG432128V 4x128Kx32 EDI2GG432128VxxD 4x128Kx32. 14mmx20mm EDI2GG432128V95D* EDI2GG432128V10D* EDI2GG432128V11D EDI2GG432128V12D gw 360

    128*64

    Abstract: transistor GW 93 H GW 94 H
    Text: EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM Advanced 4x128Kx64, 3.3V Synchronous Flow-Through Module Features • 4x128Kx64 Synchronous • Flow-Through Architecture • Clock Controlled Registered Bank Enables E1\, E2\, E3, E4\ • Clock Controlled Registered Address


    Original     		PDF EDI2KG464128V 4x128Kx64, 4x128Kx64 EDI2KG64128VxxD 01581USA EDI2KG464128V 128*64 transistor GW 93 H GW 94 H

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY INFORMATION L9D222G72BG3 2.2 Gb, DDR2, 32 M x 72 Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 16mm x 22mm – 208PBGA, 1.00mm pitch Differential Data Strobe (DQS, DQSx\) per byte


    Original     		PDF L9D222G72BG3 400Mbps 208PBGA, LDS-L9D222G72BG3-B

    CYL008M162FFBU-1ABAI

    Abstract: M2A2
    Text: PRELIMINARY CYL008M162FFB 128-Mbit 8-Mbit x 16 Low-Power MoBL4 SDRAM Features — Deep Sleep Mode — Self Refresh Mode; standard and low power • Functionality • Temperature: –40°C to +85°C — Internal 4 Bank Operation • 8 mm x 8 mm x 1.0 mm 54-ball 0.8 mm FBGA Package


    Original     		PDF CYL008M162FFB 128-Mbit 54-ball CYL008M162FFB CYL008M162FFBU-1ABAI M2A2

    W3J512M32G

    Abstract: M41K256M32
    Text: W3J512M32G-XBX W3J512M32G T -XB2X W3J512M36/40G(T)-XB3X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.5V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800, 1,066, 1333 Mb/s  74% Space savings vs. FBGA  Packages:


    Original     		PDF W3J512M32G-XBX W3J512M32G W3J512M36/40G x36/40 M41K256M32

    Untitled

    Abstract: No abstract text available
    Text: W3J512M64K-XPBX W3J512M64K-XLBX *ADVANCED 4GB – 512M x 64 DDR3 SDRAM 1.35V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1,066, 1333, 1600* Mb/s  Differential clock terminations included


    Original     		PDF W3J512M64K-XPBX W3J512M64K-XLBX

    Untitled

    Abstract: No abstract text available
    Text: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM – External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION  Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with


    Original     		PDF WED9LC6816V 256Kx32 SSRAM/4Mx32 TMS320C6000 WED9LC6816V 4Mx32 4Mx16 TMS320C6201 TMS320C6201

    M41K256M32

    Abstract: No abstract text available
    Text: W3J512M32K-XBX W3J512M36K T -XB2X W3J512M36/40K(T)-XB3X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.35V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800, 1,066, 1333 Mb/s  74% Space savings vs. FBGA  Packages:


    Original     		PDF W3J512M32K-XBX W3J512M36K W3J512M36/40K M41K256M32

    Untitled

    Abstract: No abstract text available
    Text: • P h ilip s S e m ico n d u cto rs ., 1^53^31 DQ24301 IbT APX P rodu ct sp e cifica tio n AUER PHILIPS/DISCRETE b?E D ^ — Schottky barrier diodes FE A T U R E S — BAS70 series Q U IC K R E F E R E N C E DATA • Low leakage current SYM BOL • Low turn-on and high breakdown


    OCR Scan     		PDF DQ24301 BAS70 LafciS3T31 MHAS03 MRA802

    jeida+dram+88+pin

    Abstract: jeida 88 pin jeida dram 88 pin
    Text: STI321000C1 -xxVx 88-PIN CARDS 1M X 32 DRAM Card FEATURES • Performance range: ^RAC ^CAC *RC STI321000C1-60Vx 60ns 15ns 110ns STI32100OC1-7OVx 70ns 18ns 130ns STI321000C1-80Vx 80ns 20ns 150ns The Simple Technology STI321000C1 is a 1M bit x 32 Dynamic RAM high density memory card. The Simple Technology


    OCR Scan     		PDF STI321000C1 STI321000C1-60Vx STI32100OC1-7OVx STI321000C1-80Vx 110ns 130ns 150ns 88-PIN jeida+dram+88+pin jeida 88 pin jeida dram 88 pin

    Untitled

    Abstract: No abstract text available
    Text: STI322000D1 -xxV 72-PIN DIMMS 2M X 32 DRAM DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI322000D1 is a 2M bits x 32 Dynamic RAM high density memory module. The Simple Technology STI322000D1 consist of four CMOS 2M x 8 DRAMs in 28-pin


    OCR Scan     		PDF STI322000D1 STI322000D1-60 STI322000D1-80V 110ns 130ns 150ns 72-PIN

    MAS 10 RCD

    Abstract: MSM54V32128 1DQ23
    Text: O K I Semiconductor_ M SM 54V 32126/8_ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V32126/8 is a new generation Graphic D RAM organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM54V32126/8 is OKI's CM O S silicon gate


    OCR Scan     		PDF MSM54V32126/8_ 072-Word 32-Bit MSM54V32126/8 MSM54V32128 MAS 10 RCD 1DQ23

    EZ23

    Abstract: MSM5432128
    Text: O K I Semiconductor MSM5432126/8_ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5432126/8 is a new generation Graphic DRAM organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM5432126/8 is OKI’s CMOS silicon gate


    OCR Scan     		PDF MSM5432126/8_ 072-Word 32-Bit MSM5432126/8 MSM5432128 EZ23

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY721661 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY721661 BEG-80 216-WORD 72-BIT THMY721661BEG TC59S6408BFT/BFTL 72-bit

    Untitled

    Abstract: No abstract text available
    Text: EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM Advanced 4x128Kx72, 3.3 V Sync/Sync Burst Flow-Through 4x128K x72 Synchronous, S ynchronous Burst The E D I2C G 472128V xxD2 is a S ynchronous/S ynchro­ Flow-Through A rchitecture nous Burst SRAM , 84 position Dual Key; Double High


    OCR Scan     		PDF EDI2CG472128V 4x128Kx72, 4x128K 72128V 4x128Kx72. 700P8511111111111 11111111111111II1111111111111111 111111111111111111111111111111111II111111 050TYP. EDI2CG472128V

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI2KG46464V 2 Megabyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS, IN C ADVANCED 4x64Kx64, 3.3V Module Features Synchronous Flow-Through • 4x64Kx64 Synchronous • Flow-Through A rchitecture • C lock Controlled Registered Bank Enables E1\, Module, organized as 4x64Kx64. The M odule contains


    OCR Scan     		PDF EDI2KG46464V 4x64Kx64, 4x64Kx64 4x64Kx64. I2KG46464VxxD

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF MY7216E1 BEG-80 216-WORD 72-BIT THMY7216E1BEG TC59S6408BFT 72-bit

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA THMY641661 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY641661BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT/BFTL DRAMs on a printed circuit board.


    OCR Scan     		PDF THMY641661 BEG-80 216-WORD 64-BIT THMY641661BEG TC59S6408BFT/BFTL 64-bit