ELNA MARKING MANUFACTURE Search Results

ELNA MARKING MANUFACTURE Result Highlights (5)

Part	Manufacturer	Description
DFE2016CKA-1R0M=P2	Murata Manufacturing Co Ltd	Fixed IND 1uH 1800mA NONAUTO
GCM033C70J104KE02J	Murata Manufacturing Co Ltd	0201 (0603M) X7S (EIA) 6.3Vdc 0.1μF±10%
GRT155R61A106ME13J	Murata Manufacturing Co Ltd	0402 (1005M) X5R (EIA) 10Vdc 10μF±20%
GRT21BD72A225KE13K	Murata Manufacturing Co Ltd	0805 (2012M) X7T (EIA) 100Vdc 2.2μF±10%
KC355QD7LF224KH01K	Murata Manufacturing Co Ltd	X7T (EIA) 1000Vdc 0.22μF±10%

ELNA MARKING MANUFACTURE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SY7-1A476M-RB Abstract: SY6-1C106M-RA SY1-1V104M-RA SY1-1C105M-RA SY5-1A106M-RA Elna ce 105 SY4-1C106M-RB SY4-1E225M-RA elna RA2 SY5-1C476M-RC Text: Specifications, Dimension Table TANTALUM CHIP CAPACITORS CHIPCON Specifications Item Performance Category temperature range (˚C) −55 to +125 (Above 85˚C use category voltage) Leakage current (µA) See standard ratings table Tolerance at rated capacitance (%)	Original	120Hz) 100kHz) SY2-1V106M-RD0 SK2-1V106M-RD0 SY3-1V156M-RD0 SK3-1V156M-RD0 SY4-1V226M-RD0 SK4-1V226M-RD0 2004/2005E SY7-1A476M-RB SY6-1C106M-RA SY1-1V104M-RA SY1-1C105M-RA SY5-1A106M-RA Elna ce 105 SY4-1C106M-RB SY4-1E225M-RA elna RA2 SY5-1C476M-RC	PDF
smd diode J476 Abstract: 10 35L W1 RJ3 Elna smd 3528 led strip elna cerafine 10 micro farad 25 v electrolytic capacitor Elna ce 85 smd C475 ST T4 3570 431 SY4 Text: Certifications of Quality Management System as of Jun. 2006 Applicable Standard Certification Number Item Applicable Organization ELNA CO., LTD. SHIRAKAWA Tech. (Japan) ELNA TOHOKU CO., LTD. AOMORI Factory (Japan) ISO 9001 JP05/60268QA Aluminum electrolytic capacitors	Original	JP05/60268QA MY04/0675T2 SG02/20012 100mA 5V100F) 2006/2007E smd diode J476 10 35L W1 RJ3 Elna smd 3528 led strip elna cerafine 10 micro farad 25 v electrolytic capacitor Elna ce 85 smd C475 ST T4 3570 431 SY4	PDF
smd diode J476 Abstract: LP5 ELNA diode sy 170/2 smd J476 RJ3 Elna SYF-1A335M-RJ ELNA RE2 DCK-3R3E224U-E 10 micro farad 25 v electrolytic capacitor 22 35L CAPacitor Text: TECHNICAL NOTETECHNICAL NOTE Certifications of of Quality Quality Management ManagementSystem System as (asofofJun. Jun.2007 2006) Certifications (Malaysia) ELNA-LELON ELECTRONICS (SUZHOU)ELECTRONICS CO., LTD. ELNA-LELON (China) (SUZHOU) CO., LTD. (China)	Original	1F/DZN-2R5D105T ISO/TS9001 MY04/0675T2 003ristics 100mA 5V100F) 2007/2008E smd diode J476 LP5 ELNA diode sy 170/2 smd J476 RJ3 Elna SYF-1A335M-RJ ELNA RE2 DCK-3R3E224U-E 10 micro farad 25 v electrolytic capacitor 22 35L CAPacitor	PDF
iwaki resistor Abstract: LP5 ELNA elna lp5 Series elna LA5 elna lp5 RJ5 ELNA Resistors iwaki power sense elna 63v 10000 elna capacitor SILMIC elna cerafine Text: Certiﬁcations of Quality Management System as of Jun. 2008 Factory Applicable Standard Certiﬁcation Number Item Applicable Organization ELNA CO., LTD. SHIRAKAWA Tech. (Japan) ELNA TOHOKU CO., LTD. AOMORI Factory (Japan) ISO 9001 SGS/J/Q 1327 Aluminum electrolytic capacitors	Original	MY04/0675T2 SG02/20012 2008/2009E iwaki resistor LP5 ELNA elna lp5 Series elna LA5 elna lp5 RJ5 ELNA Resistors iwaki power sense elna 63v 10000 elna capacitor SILMIC elna cerafine	PDF
LM7805 M SMD Abstract: LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small	Original	PTF180101M PTF180101M 10-watt PG-RFP-10 LM7805 M SMD LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v	PDF
elna capacitor SILMIC II Abstract: elna silmic Elna LP5 LP5 ELNA ELNA 25v 47uf RVS HUmiseal 1A27NS RJ4 Elna ELNA EDLC ELNA Electrolytic capacitor SILMIC II rvt SMD Electrolytic CAPACITORS Text: Certifications of Quality Management System as of Jun. 2008 Factory Applicable Standard Certification Number Item Applicable Organization ELNA CO., LTD. SHIRAKAWA Tech. (Japan) ELNA TOHOKU CO., LTD. AOMORI Factory (Japan) ISO 9001 JAB JP10/062036 UAKS JP05/060268	Original	JP10/062036 JP05/060268 MY04/0675T2 SG02/20012 100mA 5V100F) 2010/2011E elna capacitor SILMIC II elna silmic Elna LP5 LP5 ELNA ELNA 25v 47uf RVS HUmiseal 1A27NS RJ4 Elna ELNA EDLC ELNA Electrolytic capacitor SILMIC II rvt SMD Electrolytic CAPACITORS	PDF
LM7805 smd Abstract: LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small	Original	PTF180101M PTF180101M 10-watt PG-RFP-10 LM7805 smd LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds	PDF
elna capacitor SILMIC II Abstract: ELNA Electrolytic capacitor SILMIC II elna lp5 Series elna LA5 ELNA FOR AUDIO 100uF 25V Electrolytic Capacitor ELNA RCR-2367C elna cerafine ELNA EDLC JIS B 0211 Text: Certifications of Quality Management System as of Jun. 2008 Factory Applicable Standard Certification Number Item Applicable Organization ELNA CO., LTD. SHIRAKAWA Tech. (Japan) ELNA TOHOKU CO., LTD. AOMORI Factory (Japan) ISO 9001 JAB JP10/062036 UAKS JP05/060268	Original	JP10/062036 JP05/060268 MY04/0675T2 SG02/20012 BHD00 100mA 5V100F) 2010/2011E elna capacitor SILMIC II ELNA Electrolytic capacitor SILMIC II elna lp5 Series elna LA5 ELNA FOR AUDIO 100uF 25V Electrolytic Capacitor ELNA RCR-2367C elna cerafine ELNA EDLC JIS B 0211	PDF
elna 50v Abstract: BCP56 LM7805 PTFA092201E PTFA092201F RO4350 Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced	Original	PTFA092201E PTFA092201F PTFA092201E PTFA092201F 220-watt, H-36260-2 H-37260-2 elna 50v BCP56 LM7805 RO4350	PDF
a2324 Abstract: H-37260-2 elna 50v LM7805 05 BCP56 LM7805 PTFA092201E PTFA092201F RO4350 Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced	Original	PTFA092201E PTFA092201F PTFA092201E PTFA092201F 220-watt, H-36260-2 H-37260-2 a2324 H-37260-2 elna 50v LM7805 05 BCP56 LM7805 RO4350	PDF
LM7805 M SMD Abstract: LM7805 smd C5 MARKING TRANSISTOR lm7805 datasheet future LM7805 smd 8 pin elna 50v transistor smd marking ND LM7805 PTF180101M TPSE106K050R0400 Text: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small	Original	PTF180101M PTF180101M 10-watt LM7805 M SMD LM7805 smd C5 MARKING TRANSISTOR lm7805 datasheet future LM7805 smd 8 pin elna 50v transistor smd marking ND LM7805 TPSE106K050R0400	PDF
Untitled Abstract: No abstract text available Text: PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced	Original	PTFA092201E PTFA092201F PTFA092201E PTFA092201F 220-watt, H-36260-2 H-37260-2	PDF
LM7805 smd Abstract: LM7805 smd transistor marking C14 Text: Preliminary PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 1930 – 1990 MHz Description The PTF180101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the PCS band. This LDMOS device operates at 50% efficiency	Original	PTF180101M PTF180101M 10-watt PTF180101M* TSSOP-10 LM7805 smd LM7805 smd transistor marking C14	PDF
transistor D331 circuit diagram application Abstract: d331 TRANSISTOR equivalent transistor D331 datasheet D331 transistor transistor d331 transistor D331 circuit diagram D331 DVB-T Schematic PTFA142401EL D331 datasheet Text: PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz Description The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz	Original	PTFA142401EL PTFA142401FL PTFA142401EL PTFA142401FL 240-watt transistor D331 circuit diagram application d331 TRANSISTOR equivalent transistor D331 datasheet D331 transistor transistor d331 transistor D331 circuit diagram D331 DVB-T Schematic D331 datasheet	PDF

transistor di 960 Abstract: No abstract text available Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications	Original	PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-34288-2 transistor di 960	PDF
BCP56 Abstract: LM7805 PTFA091201GL PTFA091201HL A0912 Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in	Original	PTFA091201GL PTFA091201HL PTFA091201GL PTFA091201HL 120-watt PG-63248-2 PG-64248-2 BCP56 LM7805 A0912	PDF
elna capacitor 22uf Abstract: No abstract text available Text: PTFA041001E PTFA041001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 460 – 470 MHz Description The PTFA041001E and PTFA041001F are thermally-enhanced, 100-watt, internally-matched GOLDMOS FETs intended for GSM/ EDGE applications. Thermally-enhanced packaging provides the	Original	PTFA041001E PTFA041001F 100-watt, H-30248-2 PTFA041001FT H-31248-2 elna capacitor 22uf	PDF
LM7805 Abstract: H-30265-2 lm 2094 Text: PTFA210701E Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E is a thermally-enhanced, 70-watt, internallymatched GOLDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from	Original	PTFA210701E PTFA210701E 70-watt, H-30265-2 PTFA210701F* H-31265-2 LM7805 H-30265-2 lm 2094	PDF
PTFA043002 Abstract: PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010 Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The	Original	PTFA043002E PTFA043002 300-watt, H-30275-4 PTFA043002E SCHEMATIC DIAGRAM 3.3kv type 103 capacitor, 2kv RF, 1300 pf marking us capacitor pf l1 BCP56 LM7805 300WPEP P33K TRANSISTOR 023 3010	PDF
C66065-A2326-C001-01-0027 Abstract: transistor a102 r025 capacitor elna 50v INFINEON schematic diagram 200B BCP56 LM7805 PTFA070601E PTFA070601F Text: PTFA070601E PTFA070601F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 – 770 MHz Description The PTFA070601E and PTFA070601F are 60-watt LDMOS FETs designed for cellular power amplifier applications in the 725 to 770	Original	PTFA070601E PTFA070601F PTFA070601E PTFA070601F 60-watt H-36265-2 H-37265-2 C66065-A2326-C001-01-0027 transistor a102 r025 capacitor elna 50v INFINEON schematic diagram 200B BCP56 LM7805	PDF
Untitled Abstract: No abstract text available Text: PTFA043002E Thermally-Enhanced High Power RF LDMOS FET 300 W, 470 – 860 MHz Description The PTFA043002 is a 300-watt, internally-matched, laterally-diffused, GOLDMOS push-pull FET intended for analog and digital broadcast, including 8VSB and COFDM applications from 470 to 860 MHz. The	Original	PTFA043002E PTFA043002 300-watt, H-30275-4	PDF
100uf HFK Abstract: HFK CAPACITOR 100 HFK capacitor Text: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications	Original	PTFA092211EL PTFA092211FL PTFA092211EL PTFA092211FL 220-watt, H-33288-2 H-34288-2 100uf HFK HFK CAPACITOR 100 HFK capacitor	PDF
Untitled Abstract: No abstract text available Text: PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz Description The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz	Original	PTFA142401EL PTFA142401FL PTFA142401EL PTFA142401FL 240-watt	PDF
10 ohms potentiometer Abstract: 08051J100GBTTR BCP56 LM7805 PTFA182001E RO4350 Text: PTFA182001E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 – 1880 MHz Description The PTFA182001E is a 200-watt LDMOS FET intended for EDGE applications from 1805 to 1880 MHz. Features include input and output	Original	PTFA182001E PTFA182001E 200-watt 10 ohms potentiometer 08051J100GBTTR BCP56 LM7805 RO4350	PDF

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ELNA MARKING MANUFACTURE Search Results

ELNA MARKING MANUFACTURE Result Highlights (5)

ELNA MARKING MANUFACTURE Datasheets Context Search

SY7-1A476M-RB

smd diode J476

smd diode J476

iwaki resistor

LM7805 M SMD

elna capacitor SILMIC II

LM7805 smd

elna capacitor SILMIC II

elna 50v

a2324

LM7805 M SMD

Untitled

LM7805 smd

transistor D331 circuit diagram application

transistor di 960

BCP56

elna capacitor 22uf

LM7805

PTFA043002

C66065-A2326-C001-01-0027

Untitled

100uf HFK

Untitled

10 ohms potentiometer