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    Untitled

    Abstract: No abstract text available
    Text: デュアルパワー P チャンネル MOSFET ELM57801GA-S •概要 ■特長 ELM57801GA-S は低入力容量 低電圧駆動、 低 ON 抵抗という特性を備えた大電流 MOSFET です。 ・ Vds=-20V ・ Id=-1.4A ・ Rds on < 600mΩ (Vgs=-4.5V)


    Original     		PDF ELM57801GA-S 1600mÎ AFP1913

    ELM57801GA

    Abstract: No abstract text available
    Text: 双 P 沟道 MOSFET ELM57801GA-S •概要 ■特点 ELM57801GA-S 是 P 沟道低输入电容低工作 •Vds=-20V 电压、低导通电阻的大电流 MOSFET，内藏有两 ·Id=-1.4A ·Rds on < 600mΩ (Vgs=-4.5V) 个 MOSFET。 ·Rds(on) < 800mΩ (Vgs=-2.5V)


    Original     		PDF ELM57801GA-S 1600mÎ SC-70-6( AFP1913 ELM57801GA

    Untitled

    Abstract: No abstract text available
    Text: Dual P-channel MOSFET ELM57801GA-S •General description ■Features ELM57801GA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=-20V Id=-1.4A Rds(on) < 600mΩ (Vgs=-4.5V) Rds(on) < 800mΩ (Vgs=-2.5V)


    Original     		PDF ELM57801GA-S ELM57801GA-S 1600mÎ SC-70-6 P1913 AFP1913