Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET ELM34810AA-N •General description ■Features ELM34810AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=7A Rds(on) < 21mΩ (Vgs=10V) Rds(on) < 35mΩ (Vgs=4.5V)
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ELM34810AA-N
ELM34810AA-N
P2103HVG
Jun-29-2004
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Untitled
Abstract: No abstract text available
Text: デュアルパワー N チャンネル MOSFET ELM34810AA-N •概要 ■特長 ELM34810AA-N は低入力容量 低電圧駆動、 低 オン抵抗という特性を備えた大電流デュアルパワー ・ Vds=30V ・ Id=7A MOSFET です。 ・ Rds on < 21mΩ (Vgs=10V)
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ELM34810AA-N
P2103HVG
Jun-29-2004
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ELM34810AA
Abstract: No abstract text available
Text: 双 N 沟道 MOSFET ELM34810AA-N •概要 ■特点 ELM34810AA-N 是 N 沟道低输入电容低工作电压、 •Vds=30V 低导通电阻的大电流 MOSFET，内藏有两个 MOSFET。 ·Id=7A ·Rds on < 21mΩ (Vgs=10V) ·Rds(on) < 35mΩ (Vgs=4.5V) ■绝对最大额定值
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ELM34810AA-N
P2103HVG
Jun-29-2004
ELM34810AA
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET ELM34810AA-N •General description ■Features ELM34810AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=7A Rds(on) < 21mΩ (Vgs=10V) Rds(on) < 35mΩ (Vgs=4.5V)
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Original
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ELM34810AA-N
ELM34810AA-N
P2103HVG
Jun-29-2004
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250M
Abstract: No abstract text available
Text: Dual N-channel MOSFET ELM34810AA-N • General description B F e a tu re s ELM 34810AA-N uses advanced tre n c h tech n o lo g y to provide excellent Rds on , low gate charge and low gate resistance. • Vds=30V • Id=7A • Rds(on) < 21mQ (Vgs=10V) • Rds(on) < 35mQ (Vgs=4.5V)
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OCR Scan
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ELM34810AA-N
ELM34810AA-N
125C/W
250M
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