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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Single N-channel MOSFET ELM32404LA-S •General description ■Features ELM32404LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=12A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 37mΩ (Vgs=4.5V)	Original	ELM32404LA-S ELM32404LA-S P2503BDG O-252	PDF
P2503 Abstract: No abstract text available Text: Single N-channel MOSFET ELM32404LA-S •General description ■Features ELM32404LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=12A Rds(on) < 25mΩ (Vgs=10V) Rds(on) < 37mΩ (Vgs=4.5V)	Original	ELM32404LA-S ELM32404LA-S P2503BDG O-252 P2503	PDF
ELM32404LA Abstract: No abstract text available Text: 单 N 沟道 MOSFET ELM32404LA-S •概要 ■特点 ELM32404LA-S 是 N 沟道低输入电容，低工作电压， •Vds=30V 低导通电阻的大电流 MOSFET。 ·Id=12A ·Rds on < 25mΩ (Vgs=10V) ·Rds(on) < 37mΩ (Vgs=4.5V) ■绝对最大额定值项目	Original	ELM32404LA-S O-252 P2503BDG ELM32404LA	PDF
Untitled Abstract: No abstract text available Text: シングル N チャンネル MOSFET ELM32404LA-S •概要 ■特長 ELM32404LA-S は低入力容量低電圧駆動、低・ Vds=30V ON 抵抗という特性を備えた大電流 MOS FET です。・ Id=12A ・ Rds on < 25mΩ (Vgs=10V) ・ Rds(on) < 37mΩ (Vgs=4.5V)	Original	ELM32404LA-S P2503BDG O-252	PDF