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    Elite Enterprises

    Abstract: high flux LED Elite Enterprises H.K
    Text: Elite Enterprises H.K. Co., Ltd Part No.﹕1P00S6W33B0CA0Z1 § Standard 7.62*7.62*3.5mm diameter package. ITEM MATERIALS Resin(Mold) Epoxy Lens Color Code C Water Transparent T Colored Transparent M White Diffused D Colored Diffused Lead Frame Ag Plating Copper Alloy


    Original     		PDF 1P00S6W33B0CA0Z1 260for5sec Elite Enterprises high flux LED Elite Enterprises H.K

    Untitled

    Abstract: No abstract text available
    Text: ESMT M13S128168A DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )


    Original     		PDF M13S128168A

    M13S128168A

    Abstract: No abstract text available
    Text: ESMT M13S128168A DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )


    Original     		PDF M13S128168A M13S128168A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M14D1G1664A 2D DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D1G1664A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M13S64164A DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )


    Original     		PDF M13S64164A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M14D2561616A 2E Automotive Grade DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D2561616A

    CKE 2009

    Abstract: M13S128168A
    Text: ESMT M13S128168A Operation temperature condition -40°C~85°C DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS


    Original     		PDF M13S128168A CKE 2009 M13S128168A

    M14D256

    Abstract: ESMT M14D2561616A M14D2561616A DDR2-667 DDR2-800
    Text: ESMT M14D2561616A DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe DQS, /DQS ; /DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D2561616A M14D256 ESMT M14D2561616A M14D2561616A DDR2-667 DDR2-800

    M14D2561616A

    Abstract: DDR-533
    Text: ESMT M14D2561616A Operation Temperature Condition TC -40°C~95°C DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle


    Original     		PDF M14D2561616A M14D2561616A DDR-533

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary M14D1G1664A (2S) DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D1G1664A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M13S128168A Operation temperature condition -40°C~85°C Revision History Revision 1.0 03 Jan. 2007 - Original Revision 1.1 (19 Mar. 2008) - Add BGA package - Modify the waveform of Power up & Initialization Sequence - Modify the θ value of TSOPII package dimension


    Original     		PDF M13S128168A

    CKE 2009

    Abstract: M13S64164A CL301
    Text: ESMT M13S64164A Operation Temperature Condition -40°C~85°C DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS


    Original     		PDF M13S64164A CKE 2009 M13S64164A CL301

    M14D5121632A

    Abstract: No abstract text available
    Text: ESMT M14D5121632A 2H Automotive Grade DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D5121632A

    M14D5121632A

    Abstract: No abstract text available
    Text: ESMT M14D5121632A 2C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D5121632A M14D5121632A

    Untitled

    Abstract: No abstract text available
    Text: ESM T M14D5121632A 2C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V 0.1V, VDDQ = 1.8V 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D5121632A

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary M14D2561616A (2E) DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D2561616A

    Untitled

    Abstract: No abstract text available
    Text: ESM T M14D1G1664A 2D 7DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D1G1664A

    DDR II SDRAM

    Abstract: No abstract text available
    Text: ESMT DDR II SDRAM M14D128168A 2M 2M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D128168A DDR II SDRAM

    Untitled

    Abstract: No abstract text available
    Text: ESM T M14D2561616A Operation Temperature Condition TC -40 C~95 C DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle


    Original     		PDF M14D2561616A

    M14D512

    Abstract: M14D5121632A M14D5121 M14D5121632A -2.5B CKE 2009 MAKING A10 BGA DDR2-667 emrs3
    Text: ESMT M14D5121632A Operation Temperature Condition TC -40°C~95°C DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle


    Original     		PDF M14D5121632A M14D512 M14D5121632A M14D5121 M14D5121632A -2.5B CKE 2009 MAKING A10 BGA DDR2-667 emrs3

    M14D5121632A

    Abstract: M14D512 M14D5121632A -2.5B DDR2-667 DDR2-800 M14D M14D5121
    Text: ESMT M14D5121632A DDR II SDRAM 8M x 16 Bit x 4 Banks DDR II SDRAM Features z JEDEC Standard z VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V z Internal pipelined double-data-rate architecture; two data access per clock cycle z Bi-directional differential data strobe DQS, /DQS ; /DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D5121632A M14D5121632A M14D512 M14D5121632A -2.5B DDR2-667 DDR2-800 M14D M14D5121

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary M14D1G1664A (2S) Automotive Grade DDR II SDRAM 8M x 16 Bit x 8 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V  Internal pipelined double-data-rate architecture; two data access per clock cycle


    Original     		PDF M14D1G1664A

    Untitled

    Abstract: No abstract text available
    Text: ESM T M14D2561616A DDR II SDRAM 4M x 16 Bit x 4 Banks DDR II SDRAM Features JEDEC Standard VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V Internal pipelined double-data-rate architecture; two data access per clock cycle Bi-directional differential data strobe DQS, DQS ; DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D2561616A

    M14D128168A

    Abstract: 18BB
    Text: ESMT DDR II SDRAM M14D128168A 2M 2M x 16 Bit x 4 Banks DDR II SDRAM Features  JEDEC Standard  VDD = 1.8V ± 0.1V, VDDQ = 1.8V ± 0.1V  Internal pipelined double-data-rate architecture; two data access per clock cycle  Bi-directional differential data strobe (DQS, DQS ); DQS can be disabled for single-ended data strobe operation.


    Original     		PDF M14D128168A M14D128168A 18BB