1N5819CSM4
Abstract: No abstract text available
Text: SCHOTTKY RECTIFIER DIODE 1N5819CSM4 • Hermetic Ceramic Surface Mount Package MO-041BA • VRRM = 40V, IF = 1.0A • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VRRM VRWM IF(AV)
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Original
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1N5819CSM4
MO-041BA)
100mA
1N5819CSM4-JQRS
1N5819CSM4
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PDF
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q217
Abstract: No abstract text available
Text: SCHOTTKY RECTIFIER DIODE 1N5819CSM4 • Hermetic Ceramic Surface Mount Package MO-041BA • VRRM = 40V, IF = 1.0A • Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VRRM VRWM IF(AV)
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Original
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1N5819CSM4
MO-041BA)
100mA
1N5819CSM4-JQRS
q217
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PDF
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1N750A
Abstract: LE17 MIL-PRF19500 QR217 ac 8755
Text: 500mW ZENER DIODE 1N750AD1A • • • Standard ±5% Zener Voltage Tolerance. Hermetic Ceramic Surface Mount Package. Space Level and High-Reliability Screening Options Available. ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VF IZM PT Forward Voltage
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Original
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500mW
1N750AD1A
200mA
500mW
1N750AD1A-JQRS
1N750A
LE17
MIL-PRF19500
QR217
ac 8755
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B • High Voltage • Hermetic Ceramic SMD0.5 TO-276AA Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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Original
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BDS12N1A,
BDS12N1B
O-276AA)
BDS12N1B-JQRS
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PDF
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Untitled
Abstract: No abstract text available
Text: HERMETIC SCHOTTKY RECTIFIER 1N6492 • • • • • Extremely Low VF and IR High Surge Capability Low Recovery Charge Low Profile TO-39 Hermetic Package High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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Original
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1N6492
1N6492-JQRS
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PDF
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Untitled
Abstract: No abstract text available
Text: DUAL SCHOTTKY RECTIFIER 1N6492-DA 1N6492-DC • • • • • • • Dual Rectifier in One Package Common Anode or Cathode Option Extremely Low VF and IR High Surge Capability Low Recovery Charge Low Profile TO-39 Hermetic Package High-Reliability Screening Options Available
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Original
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1N6492-DA
1N6492-DC
1N6492-DA-JQRS
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PDF
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1N4620
Abstract: LE17 MIL-PRF19500 QR217 Low Noise Zener Diode CVP zener diode
Text: LOW NOISE ZENER DIODE 1N4620DLCC2 • • • • • • Low Leakage Low Current Low Noise Standard ±5% Zener Voltage Tolerance Hermetic Ceramic Surface Mount Package Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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Original
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1N4620DLCC2
250mW
200mA
V4620D2A-JQRS
1N4620D2A-JQRS
1N4620
LE17
MIL-PRF19500
QR217
Low Noise Zener Diode
CVP zener diode
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS10N1A, BDS10N1B • High Voltage • Hermetic Ceramic SMD0.5 TO-276AA Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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Original
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BDS10N1A,
BDS10N1B
O-276AA)
BDS10N1B-JQRS
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PDF
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1n6492
Abstract: LE17 MIL-PRF19500 QR217
Text: DUAL SCHOTTKY RECTIFIER 1N6492-DA 1N6492-DC • • • • • • • Dual Rectifier in One Package Common Anode or Cathode Option Extremely Low VF and IR High Surge Capability Low Recovery Charge Low Profile TO-39 Hermetic Package High-Reliability Screening Options Available
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Original
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1N6492-DA
1N6492-DC
1N6492-DA-JQRS
1n6492
LE17
MIL-PRF19500
QR217
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PDF
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LE17
Abstract: MIL-PRF19500 QR217 B-MELF
Text: SILICON ZENER DIODE 1N4109D2A / 1N4109D2B • VZ = 15V • • • Low Noise Standard ±5% Zener Voltage Tolerance Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. Space Level and High-Reliability Screening Options Available
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Original
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1N4109D2A
1N4109D2B
250mW
1N4109D2A-JQRS
LE17
MIL-PRF19500
QR217
B-MELF
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PDF
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BDS12M2A
Abstract: EG marking Q217
Text: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A • High Voltage • Hermetic TO-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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Original
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BDS12M2A
O-257AB
BDS12M2A-JQRS
BDS12M2A
EG marking
Q217
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PDF
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NPN transistor 9418
Abstract: 9418 transistor
Text: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS10N1A, BDS10N1B • High Voltage • Hermetic Ceramic SMD0.5 TO-276AA Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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Original
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BDS10N1A,
BDS10N1B
O-276AA)
BDS10N1B-JQRS
NPN transistor 9418
9418 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: 500mW ZENER DIODE 1N750AD1A • • • Standard ±5% Zener Voltage Tolerance. Hermetic Ceramic Surface Mount Package. Space Level and High-Reliability Screening Options Available. ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VF IZM PT Forward Voltage
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Original
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500mW
1N750AD1A
200mA
500mW
1N750AD1A-JQRS
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PDF
|
Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12N1A, BDS12N1B • High Voltage • Hermetic Ceramic SMD0.5 TO-276AA Surface Mount Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
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Original
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BDS12N1A,
BDS12N1B
O-276AA)
BDS12N1B-JQRS
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PDF
|
|
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100N1
Abstract: No abstract text available
Text: HIGH EFFICIENCY SCHOTTKY RECTIFIER DIODE SB30-100N1 • Hermetic Ceramic Surface Mount Package TO-267AA • Low Forward Voltage Drop • Typical applications include Switching Power Supplies, Converters, Free Wheeling Diodes and Reverse Battery Protection
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Original
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SB30-100N1
O-267AA)
SB30-100N1-JQRS
100N1
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PDF
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1N4109DLCC2
Abstract: 1N4109 LE17 MIL-PRF19500 QR217
Text: 250mW ZENER DIODE 1N4109DLCC2 • • • • • • Low Leakage Low Current Low Noise Standard ±5% Zener Voltage Tolerance Hermetic Ceramic Surface Mount Package Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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Original
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250mW
1N4109DLCC2
250mW
L4109D2A-JQRS
1N4109D2A-JQRS
1N4109DLCC2
1N4109
LE17
MIL-PRF19500
QR217
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH EFFICIENCY SCHOTTKY RECTIFIER DIODE SB30-100N1 • Hermetic Ceramic Surface Mount Package TO-267AA • Low Forward Voltage Drop • Typical applications include Switching Power Supplies, Converters, Free Wheeling Diodes and Reverse Battery Protection
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Original
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SB30-100N1
O-267AA)
SB30-100N1-JQRS
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PDF
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS12M2A • High Voltage • Hermetic TO-257AB Isolated Metal Package • Ideally suited for Power Linear, Switching and general Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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Original
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BDS12M2A
O-257AB
BDS12M2A-JQRS
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PDF
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SML05SC12D3
Abstract: LE17 MIL-PRF19500 QR217 schottky rectifier diode
Text: SILICON CARBIDE SCHOTTKY RECTIFIER DIODE SML05SC12D3 • • • • • • Hermetic Ceramic Surface Mount Package “D-5B” / “E-MELF” Compatible Footprint 1200V, 5A, Schottky Rectifier Zero Forward and Reverse Recovery High Frequency Operation Fast Temperature Independent Switching
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Original
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SML05SC12D3
SML05SC12D3B
SML05SC12D3
LE17
MIL-PRF19500
QR217
schottky rectifier diode
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PDF
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Untitled
Abstract: No abstract text available
Text: 250mW SILICON ZENER DIODE 1N4109D2A / 1N4109D2B • VZ = 15V • • • Low Noise Standard ±5% Zener Voltage Tolerance Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. Space Level and High-Reliability Screening Options Available
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Original
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250mW
1N4109D2A
1N4109D2B
250mW
1N4109D2A-JQRS
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PDF
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do-213aa solder PAD DIMENSIONS
Abstract: melf diode D-5D D-5d layout 1N750AUR-1 melf diode marking
Text: DIODE LEADLESS CHIP CARRIER DLCC1 • Light Weight Hermetic Ceramic Surface Mount Package is designed as a drop In replacement for “MELF-4.5 D-5D ”/ ”DO-213AA” Packages • Designed For High Reliability Military, Aerospace and Space Applications ABSOLUTE
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Original
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DO-213AA"
63Sn/37Pb
DO-213AA
1N750AUR-1
1N4620UR-1
do-213aa solder PAD DIMENSIONS
melf diode D-5D
D-5d layout
1N750AUR-1
melf diode marking
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PDF
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Untitled
Abstract: No abstract text available
Text: HIGH POWER SILICON NPN TRANSISTOR BUL57AN2A, BUL57AN2B • High Voltage, High Current • Hermetic Ceramic Surface Mount Package • Ideally Suited For Electronic Ballast, Switch Mode Power Supply Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated
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Original
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BUL57AN2A,
BUL57AN2B
BUL57AN2B-JQRS
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PDF
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1N750A
Abstract: LE17 MIL-PRF19500 QR217
Text: 500mW ZENER DIODE 1N750AD1 Standard ±5% Zener Voltage Tolerance. Hermetic Ceramic Surface Mount Package. Space Level and High-Reliability Screening Options Available. • • • ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VF IZM IZSM PT
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Original
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500mW
1N750AD1
200mA
990mA
500mW
1N750AD1A-JQRS
1N750A
LE17
MIL-PRF19500
QR217
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PDF
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TTL 7475
Abstract: TC-1128 7475 ttl UPB2202D PB2200D NEC AMERICA
Text: NEC r B IP O L A R D IG IT A L IN T E G R A T E D C IR C U IT S ELECTRON DEVICE /a P B / 256- B I T 2 2 • / D , / i P B 2 2 2 D ^ BIPOLAR TTL KAM T h e N E C i i P B 2 2 0 0 D a n d / i P B 2 2 0 2 D in t e g r a t e d cir cu its are high-spe ed I h r e e - S t a t e , T T L in t e r f a c e ,
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OCR Scan
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juPB2200D
256-BIT
NECiiPB2200D
/iPB2202D
//PB2200D)
//PB2202D)
PB2200D)
300mW
PB2202D)
TTL 7475
TC-1128
7475 ttl
UPB2202D
PB2200D
NEC AMERICA
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PDF
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