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    marking code s2a SOT23

    Abstract: smbt3906 MMBT3906 infineon
    Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


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    SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161 marking code s2a SOT23 smbt3906 MMBT3906 infineon PDF

    SMBT3906U

    Abstract: No abstract text available
    Text: SMBT3906U PNP Silicon Switching Transistor Array  High DC current gain: 0.1mA to 100mA 5 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 3 2  Complementary type: SMBT3904U (NPN)


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    SMBT3906U 100mA SMBT3904U VPW09197 EHA07175 EHP00773 EHP00764 Jul-11-2001 SMBT3906U PDF

    ic power 22E

    Abstract: H12E h11E SMBT3906U 1N916 SC74 SMBT3904U EHP00768
    Text: SMBT3906U PNP Silicon Switching Transistor Array  High DC current gain: 0.1mA to 100mA 5 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 3 2  Complementary type: SMBT3904U (NPN)


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    SMBT3906U 100mA SMBT3904U VPW09197 EHA07175 EHP00773 EHP00764 Nov-30-2001 ic power 22E H12E h11E SMBT3906U 1N916 SC74 SMBT3904U EHP00768 PDF

    SMBT3906S

    Abstract: TRANSISTOR SMBT3906S 1N916 SMBT3904S VPS05604 H12E ic power 22E EHP00768
    Text: SMBT3906S PNP Silicon Switching Transistor Array 4  High DC current gain: 0.1mA to 100mA 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package  Complementary type: SMBT3904S (NPN)


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    SMBT3906S 100mA SMBT3904S VPS05604 EHA07175 OT363 EHP00773 EHP00764 Nov-30-2001 SMBT3906S TRANSISTOR SMBT3906S 1N916 SMBT3904S VPS05604 H12E ic power 22E EHP00768 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


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    SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161 PDF

    power 22E

    Abstract: TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A
    Text: SMBT3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1 mA to 100 mA  Low collector-emitter saturation voltage  Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings


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    SMBT3906 SMBT3904 VPS05161 EHP00773 EHP00768 Aug-20-2001 EHP00769 power 22E TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A PDF

    H12E

    Abstract: SMBT3906U
    Text: SMBT3906U PNP Silicon Switching Transistor Array  High DC current gain: 0.1mA to 100mA 5 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 3 2  Complementary type: SMBT3904U (NPN)


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    SMBT3906U 100mA SMBT3904U VPW09197 EHA07175 H12E SMBT3906U PDF

    power 22E

    Abstract: TRANSISTOR S2A SMBT3906 1N916 SMBT3904
    Text: SMBT3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1 mA to 100 mA  Low collector-emitter saturation voltage  Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings


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    SMBT3906 SMBT3904 VPS05161 EHP00773 EHP00768 Nov-30-2001 EHP00769 power 22E TRANSISTOR S2A SMBT3906 1N916 SMBT3904 PDF

    SMBT3906U

    Abstract: No abstract text available
    Text: SMBT3906U PNP Silicon Switching Transistor Array  High DC current gain: 0.1mA to 100mA 5 4 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package 3 2  Complementary type: SMBT3904U (NPN)


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    SMBT3906U 100mA SMBT3904U VPW09197 EHA07175 SMBT3906U PDF

    ic power 22E

    Abstract: 1N916
    Text: SMBT 3906U PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3904U (NPN)


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    3906U 100mA 3904U VPW09197 EHA07175 SC-74 EHP00773 EHP00764 Oct-14-1999 ic power 22E 1N916 PDF

    3906

    Abstract: transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E
    Text: SMBT 3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT 3904 NPN 2 1 Type Marking SMBT 3906 s2A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings


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    100mA VPS05161 OT-23 EHP00772 EHP00773 Oct-14-1999 EHP00768 EHP00769 3906 transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E PDF

    ic power 22E

    Abstract: SMBT 3904S 1N916 3904S VPS05604
    Text: SMBT 3906S PNP Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package • Complementary type: SMBT 3904S (NPN)


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    3906S 100mA 3904S VPS05604 EHA07175 OT-363 EHP00773 EHP00764 Jan-26-1998 ic power 22E SMBT 3904S 1N916 3904S VPS05604 PDF

    MMBT3906

    Abstract: SMBT3906 EHP00772 TRANSISTOR S2A 1N916 MMBT3904 SMBT3904
    Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


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    SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161 EHP00771 EHP00768 Jul-28-2003 MMBT3906 SMBT3906 EHP00772 TRANSISTOR S2A 1N916 MMBT3904 SMBT3904 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMBT3906S PNP Silicon Switching Transistor Array 4  High DC current gain: 0.1mA to 100mA 5 6  Low collector-emitter saturation voltage  Two galvanic internal isolated Transistors with good matching in one package  Complementary type: SMBT3904S (NPN)


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    SMBT3906S 100mA SMBT3904S VPS05604 EHA07175 OT363 EHP00773 EHP00764 Jul-11-2001 PDF