Untitled
Abstract: No abstract text available
Text: WSE128K16-XXX 128Kx16 SRAM/EEPROM MODULE FEATURES EEPROM MEMORY FEATURES Access Times of 35ns SRAM and 150ns (EEPROM) Write Endurance 10,000 Cycles Access Times of 45ns (SRAM) and 120ns (EEPROM) Data Retention at 25°C, 10 Years
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WSE128K16-XXX
128Kx16
150ns
120ns
300ns
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ISO-15693
Abstract: 13.56 passive RFID m24lr64-rz185/2 STARTKIT-M24LR-A ic eeprom programmer I2C Memory ic i2c application notes M24LR64-R ANT2-M24LR-A DEVKIT-M24LR-A
Text: Dual Interface EEPROM STMicroelectronics M24LR64, 64-Kbit EEPROM with I²C and 13.56 MHz ISO 15693 RF interfaces The innovative family of Dual Interface EEPROM provides new features and capabilities. The EEPROM memory bank can be accessed either by a standard I²C interface or by an
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M24LR64,
64-Kbit
32-bit
64-bit
ANT4-M24LR-A
ANT5-M24LR-A)
DATALOG-M24LR-A)
DATALOG-M24LR-A
ISO-15693
13.56 passive RFID
m24lr64-rz185/2
STARTKIT-M24LR-A
ic eeprom programmer
I2C Memory ic
i2c application notes
M24LR64-R
ANT2-M24LR-A
DEVKIT-M24LR-A
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SD14
Abstract: SD15 WSE128K16-XXX ED11 ED15 SD10 SD12 SD13
Text: White Electronic Designs WSE128K16-XXX PRELIMINARY* 128Kx16 SRAM/EEPROM MODULE FEATURES Access Times of 35ns SRAM and 150ns (EEPROM) Access Times of 45ns (SRAM) and 120ns (EEPROM) Access Times of 70ns (SRAM) and 300ns (EEPROM) Packaging • 66 pin, PGA Type, 1.075" square HIP, Hermetic
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WSE128K16-XXX
128Kx16
150ns
120ns
300ns
128K16
150ns
120ns
300ns
SD14
SD15
WSE128K16-XXX
ED11
ED15
SD10
SD12
SD13
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ATAM893
Abstract: ATAM894 BP13 BP23
Text: Features • • • • • • • • • • • • • • 8 K x 8-bit EEPROM EEPROM Programmable Options Read Protection for the EEPROM Program Memory 256 × 4-bit RAM 2 × 32 × 16-bit Data EEPROM Up to Seven External/Internal Interrupt Sources Eight Hardware and Software Interrupt Priorities
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16-bit
ATAM894
ATAM894
4679C
ATAM893
BP13
BP23
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Untitled
Abstract: No abstract text available
Text: Features • • • • • • • • • • • • • • 8 K x 8-bit EEPROM EEPROM Programmable Options Read Protection for the EEPROM Program Memory 256 × 4-bit RAM 2 × 32 × 16-bit Data EEPROM Up to Seven External/Internal Interrupt Sources Eight Hardware and Software Interrupt Priorities
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16-bit
ATAM894
ATAM894
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biphase demodulation
Abstract: No abstract text available
Text: Features • • • • • • • • • • • • • • 8 K x 8-bit EEPROM EEPROM Programmable Options Read Protection for the EEPROM Program Memory 256 × 4-bit RAM 2 × 32 × 16-bit Data EEPROM Up to Seven External/Internal Interrupt Sources Eight Hardware and Software Interrupt Priorities
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16-bit
ATAM894
ATAM894
4679C
biphase demodulation
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MSM 5525
Abstract: ccs adressable ATAM893 ATAM894 BP13 BP23 msm 5524
Text: Features • • • • • • • • • • • • • • 8 K x 8-bit EEPROM EEPROM Programmable Options Read Protection for the EEPROM Program Memory 256 × 4-bit RAM 2 × 32 × 16-bit Data EEPROM Up to Seven External/Internal Interrupt Sources Eight Hardware and Software Interrupt Priorities
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16-bit
ATAM894
ATAM894
4679D
MSM 5525
ccs adressable
ATAM893
BP13
BP23
msm 5524
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ED11
Abstract: ED15 SD10 SD12 SD13 SD14 SD15 WSE128K16-XXX
Text: White Electronic Designs WSE128K16-XXX PRELIMINARY* 128Kx16 SRAM/EEPROM MODULE FEATURES Commercial, Industrial and Military Temperature Ranges Access Times of 35ns SRAM and 150ns (EEPROM) TTL Compatible Inputs and Outputs Access Times of 45ns (SRAM) and 120ns (EEPROM)
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WSE128K16-XXX
128Kx16
150ns
120ns
300ns
128K16
150ns
120ns
300ns
ED11
ED15
SD10
SD12
SD13
SD14
SD15
WSE128K16-XXX
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Untitled
Abstract: No abstract text available
Text: Features • • • • • • • • • • • • • • 8 K x 8-bit EEPROM EEPROM Programmable Options Read Protection for the EEPROM Program Memory 256 × 4-bit RAM 2 × 32 × 16-bit Data EEPROM Up to Seven External/Internal Interrupt Sources Eight Hardware and Software Interrupt Priorities
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16-bit
ATAM894
ATAM894
4679B
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antenna 125khz automotive
Abstract: 11785 crc ISO11784 crc Transponder ID 48 B102 CECC00802 ISO11784 J-STD-020A MLX90124
Text: Features 128bit EEPROM code 125kHz Read/Write Transponder Same reading range as state of the art Read Only transponders. EEPROM programmable encoding and data rate options EEPROM programmable write protection levels Integrated tuning capacitance Single command programming with integrity check.
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128bit
125kHz
MLX90124
QS9000,
ISO14001
Aug/02
antenna 125khz automotive
11785 crc
ISO11784 crc
Transponder ID 48
B102
CECC00802
ISO11784
J-STD-020A
MLX90124
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TBA 129
Abstract: EEPROM 2864 2864 EEPROM 28 PINS 2864 eeprom motorola an1010 eeprom 2864a TBA129 EEPROM 27128 M68HC11A8 mc68hc24fn
Text: Application Note AN1010/D Rev. 1, 5/2002 M68HC11 EEPROM Programming from a Personal Computer Introduction This application note describes a simple and reliable method of programming either the M68HC11’s internal EEPROM or the EEPROM connected to the MCU’s external bus.
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AN1010/D
M68HC11
RS232
TBA 129
EEPROM 2864
2864 EEPROM 28 PINS
2864 eeprom
motorola an1010
eeprom 2864a
TBA129
EEPROM 27128
M68HC11A8
mc68hc24fn
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NROM16EE
Abstract: No abstract text available
Text: NROM16EE SAIFUN PROPRIETARY 16Mbit 2M x 8 PARALLEL EEPROM 2.7 Volt Low Power EEPROM With Basic Flash Functionality LOGIC DIAGRAM GENERAL DESCRIPTION The NROM16EE is a 16Mbits high performance, low power parallel EEPROM device that supports also basic Flash functionality. The device is
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NROM16EE
16Mbit
NROM16EE
16Mbits
128-byte
111-1111-11H1-XXXX-XXXX
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CS160
Abstract: AN-1009 CS100 NM93C46 NM93C46N
Text: AN-1009 EEPROM Endurance Prediction Fairchild Application Note 1009 ENDURANCE convention, Fairchild EEPROM cells are in the “erased” state when they indicate “1” data and written when they indicate “0”. The number of write/erase cycles an EEPROM can withstand
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AN-1009
NM93C46,
CS160
AN-1009
CS100
NM93C46
NM93C46N
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93CS56
Abstract: 10B5 9060ES 9060SD 93C06 NM93CS06 NM93CS46 FF000000
Text: EEPROM Load Instructions for PCI 9060, PCI 9060ES, PCI 9060SD July 11, 1996 These Instructions apply to the PCI 9060, 9060ES and 9060SD SHORT EEPROM LOAD The following registers are loaded from EEPROM after reset is de-asserted if the SHORT# pin is low. The bits are organized such that the most significant bit of each 32-bit word is stored first in EEPROM. The first
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9060ES,
9060SD
9060ES
32-bit
NM93CS06
93C06
93CS56
10B5
9060SD
NM93CS46
FF000000
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EEPROM 2864
Abstract: 2864 eeprom Ram 2864 EEPROM 27128 eeprom 2864a TBA 129 2864a 2864 EEPROM 28 PINS MC68HC11A1FN MAX232
Text: Freescale Semiconductor Application Note AN1010/D Rev. 1, 5/2002 Freescale Semiconductor, Inc. M68HC11 EEPROM Programming from a Personal Computer Introduction This application note describes a simple and reliable method of programming either the M68HC11’s internal EEPROM or the EEPROM connected to the
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AN1010/D
M68HC11
EEPROM 2864
2864 eeprom
Ram 2864
EEPROM 27128
eeprom 2864a
TBA 129
2864a
2864 EEPROM 28 PINS
MC68HC11A1FN
MAX232
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A1815
Abstract: 10101B 10010b
Text: NROM4EE SAIFUN PROPRIETARY 4Mbit 512K x 8 PARALLEL EEPROM 2.7 Volt Low Power EEPROM With Basic Flash Functionality LOGIC DIAGRAM GENERAL DESCRIPTION The NROM4EE is a 4Mbits high performance, low power parallel EEPROM device that supports also basic Flash functionality. The device is typically
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128-byte
10111B
11000B
11001B
11010B
11011B
11100B
11101B
11110B
11111B
A1815
10101B
10010b
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ED11
Abstract: SD10 SD12 SD13 SD14 SD15 WSE128K16-XXX WS32K32
Text: WSE128K16-XXX 128KX16 SRAM/EEPROM MODULE PRELIMINARY* FEATURES • TTL Compatible Inputs and Outputs ■ Access Times of 35ns SRAM and 150ns (EEPROM) ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Access Times of 45ns (SRAM) and 120ns (EEPROM)
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WSE128K16-XXX
128KX16
150ns
120ns
300ns
128K16
150ns
120ns
300ns
ED11
SD10
SD12
SD13
SD14
SD15
WSE128K16-XXX
WS32K32
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ED11
Abstract: SD10 SD12 SD13 SD14 SD15 WSE128K16-XXX ED07
Text: WSE128K16-XXX 128KX16 SRAM/EEPROM MODULE PRELIMINARY* FEATURES • TTL Compatible Inputs and Outputs ■ Access Times of 35ns SRAM and 150ns (EEPROM) ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Access Times of 45ns (SRAM) and 120ns (EEPROM)
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WSE128K16-XXX
128KX16
150ns
120ns
300ns
128K16
150ns
120ns
300ns
ED11
SD10
SD12
SD13
SD14
SD15
WSE128K16-XXX
ED07
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m24lr64
Abstract: 15693 eeprom M24LR64-RMB6T/2
Text: Dual interface EEPROM M24LR64, I²C and IS0 15693, 64-Kbit EEPROM with password protection The M24LR64 is an electrically-erasable memory EEPROM that can be accessed either from a wired I²C interface, or from an industry-standard RF interface which does not
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M24LR64,
64-Kbit
M24LR64
64-bit
32-bit
Ant1-M24LR-A,
Ant2-M24LR-A
15693 eeprom
M24LR64-RMB6T/2
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2864 EEPROM 28 PINS
Abstract: EEPROM 2864 EEPROM 27128 2864 eeprom M68HC11A8 TBA 129 eeprom 2864a MC68HC24FN MC68HC11A1FN ic tba 810 datasheet
Text: Freescale Semiconductor, Inc. Application Note AN1010/D Rev. 1, 5/2002 Freescale Semiconductor, Inc. M68HC11 EEPROM Programming from a Personal Computer Introduction This application note describes a simple and reliable method of programming either the M68HC11’s internal EEPROM or the EEPROM connected to the
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AN1010/D
M68HC11
2864 EEPROM 28 PINS
EEPROM 2864
EEPROM 27128
2864 eeprom
M68HC11A8
TBA 129
eeprom 2864a
MC68HC24FN
MC68HC11A1FN
ic tba 810 datasheet
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Untitled
Abstract: No abstract text available
Text: 128Kx 32 EEPROM Module mosaic PUMA67E4001/A-12/15/17/20 Issue4.2 : June 1996 semiconductor, inc. Description 4,194,304bitCMOS EEPROM Module ThePUMA67E4001/Aisa4MbitCMOS EEPROM module in a JEDEC 68 pin J leaded Ceramic Surface Mount Substrate. Accesstimes of 120,150,170and200nsareavailable.The
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128Kx
PUMA67E4001/A-12/15/17/20
304bitCMOS
ThePUMA67E4001/Aisa4MbitCMOS
170and200nsareavailable
100years.
PUMA67E4001/A-15/17/20
67E4001AMB-15E
MIL-STD-883
128Kx32
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68-JLCC package
Abstract: No abstract text available
Text: EDI7C32128C ELECTRONIC DESIGNS IN C . High Performance Four Megabit Flash EEPROM 128Kx32 CMOS Flash EEPROM :u Features The EDI7C32128C is a high performance, four megabit density Flash EEPROM organized as 128Kx32 bits. The 128Kx32 bit CMOS Flash • Five-volt-only reprogramming
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EDI7C32128C
128Kx32
EDI7C32128C
128Kx8
EDI7C32128C120JM
EDI7C32128C150JM
EDI7C32128C200JM
040x45Â
020x45Â
68-JLCC package
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Untitled
Abstract: No abstract text available
Text: SEX EDI7C32128C ELECTRONIC DESIGNS INC. High Performance Four Megabit Flash EEPROM 128Kx32 CMOS Flash EEPROM Features The EDI7C32128C is a high performance, four megabit 128Kx32 bit C M O S Flash density Flash EEPROM organized as 128Kx32 bits. The • Five-volt-only reprogramming
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EDI7C32128C
128Kx32
EDI7C32128C
128Kx8
200ns
I7C32128C120JM
I7C32128C150JM
I7C32128C200JM
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2864 EEPROM 28 PINS
Abstract: EEPROM 2864 Ram 2864 SCSR 118 2864 eeprom mc68hc11a EEPROM 27128 5Bp cms 8D0C D803
Text: Order this document by AN1010/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1010 MC68HC11 EEPROM Programming from a Personal Computer This application note describes a simple and reliable method of programming either the MC68HC11's internal EEPROM, or EEPROM connected to the M C U's external
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AN1010/D
AN1010
MC68HC11
RS232
A23405
2864 EEPROM 28 PINS
EEPROM 2864
Ram 2864
SCSR 118
2864 eeprom
mc68hc11a
EEPROM 27128
5Bp cms
8D0C
D803
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