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    EEPROM FLOTOX Search Results

    EEPROM FLOTOX Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    X28C512JI-12 Rochester Electronics LLC EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
    FM93CS46M8 Rochester Electronics LLC EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SO-8 Visit Rochester Electronics LLC Buy
    NM93C56EN Rochester Electronics LLC EEPROM, 128X16, Serial, CMOS, PDIP8, PLASTIC, DIP-8 Visit Rochester Electronics LLC Buy
    X28C512DM-15 Rochester Electronics LLC EEPROM, 64KX8, 150ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, CERDIP-32 Visit Rochester Electronics LLC Buy

    EEPROM FLOTOX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AK6416A

    Abstract: AK93C12A AK93C10 Hex schmitt trigger ecl NATIONAL LINEAR VOL2 AK93C10AF NATIONAL LINEAR VOL1 93c45a AN0050
    Text: DATASHEET Microwire type . SCI type Serial Communication Interface . I2C™ type . DAC+EEPROM .


    Original     		PDF AK93CXX AK64XX AK98XX AK9824 12Kbit AN018-00 AN019 AK9822 AK6416A AK93C12A AK93C10 Hex schmitt trigger ecl NATIONAL LINEAR VOL2 AK93C10AF NATIONAL LINEAR VOL1 93c45a AN0050

    28CXX

    Abstract: 28C64 28C64 EEPROM 93CXX 200B 24LC16 AN601 28Cxxx
    Text: AN601 EEPROM Endurance Tutorial Author: BASIC TERMS David Wilkie Reliability Engineer INTRODUCTION The endurance of an EEPROM-based device will be quoted by a manufacturer in terms of the minimum number of erase/write cycles write cycles that the device is capable of sustaining before failure. A write


    Original     		PDF AN601 DS00601A-page 28CXX 28C64 28C64 EEPROM 93CXX 200B 24LC16 AN601 28Cxxx

    AN2014

    Abstract: M93C stmicroelectronics eeprom
    Text: AN2014 Application note How a designer can make the most of STMicroelectronics Serial EEPROMs Electrically erasable and programmable memory EEPROM devices are standard products, used for the non-volatile storage of parameters and fine-granularity data. There is no single memory technology (SRAM, DRAM, EEPROM, Flash Memory, EPROM,


    Original     		PDF AN2014 AN2014 M93C stmicroelectronics eeprom

    AN2014

    Abstract: RL 66 EEPROM SCR POWER SUPPLY SPI EEPROM code flow diagram EEPROM stmicroelectronics "serial eeprom" stmicroelectronics traceability M93C stmicroelectronics eeprom
    Text: AN2014 Application note How a designer can make the most of STMicroelectronics Serial EEPROMs Electrically erasable and programmable memory EEPROM devices are standard products, used for the non-volatile storage of parameters and fine-granularity data. There is no single memory technology (SRAM, DRAM, EEPROM, Flash Memory, EPROM,


    Original     		PDF AN2014 AN2014 RL 66 EEPROM SCR POWER SUPPLY SPI EEPROM code flow diagram EEPROM stmicroelectronics "serial eeprom" stmicroelectronics traceability M93C stmicroelectronics eeprom

    microchip eeprom

    Abstract: EEPROM 24LC256 24LC256 AN1019 JESD47 MICROCHIP AN1019 JESD-47
    Text: AN1019 EEPROM 耐擦写能力教程 作者： David Wilkie Microchip Technology Inc. 基本术语 “耐擦写能力 （Endurance）”（指 EEPROM）的定义 中包含一些需要明确定义和理解的词语和短语。从以下 段落可以看出，不同厂商使用不同的标准。“耐擦写循


    Original     		PDF AN1019 IEEE-Std1005-1998 JESD47 DS01019A microchip eeprom EEPROM 24LC256 24LC256 AN1019 JESD47 MICROCHIP AN1019 JESD-47

    AN2014

    Abstract: stmicroelectronics eeprom AI-117 QNEE9801 stmicroelectronics serial eeproms
    Text: AN2014 Application note How a designer can make the most of STMicroelectronics Serial EEPROMs Introduction Electrically erasable and programmable memory EEPROM devices are standard products, used for the non-volatile storage of parameters and fine-granularity data.


    Original     		PDF AN2014 stmicroelectronics eeprom AI-117 QNEE9801 stmicroelectronics serial eeproms

    EEPROM retention testing

    Abstract: 24LC256 AN1019 JESD47 MICROCHIP AN1019
    Text: AN1019 EEPROM Endurance Tutorial Microchip uses a more stringent criteria for endurance: Author: David Wilkie Microchip Technology Inc. BASIC TERMS The definition of “endurance” as applied to EEPROMs contains various words and phrases that require clear


    Original     		PDF AN1019 DS01019A-page EEPROM retention testing 24LC256 AN1019 JESD47 MICROCHIP AN1019

    28CXX

    Abstract: EEPROM flotox 24C02A 24C04A 24CXX 24LCXX 93CXX sem 2107
    Text: EEPROM Endurance INTRODUCTION Circuit Technology These cells are then structured in either an 8 or 16 bit word organization for data storage with between 32 words 256 byte device and 8K words (64K device) using standard binary decoding schemes found industry wide on memory devices. Data can then be transmitted either into the device for storage or read from the


    Original     		PDF DS21055B-page 28CXX EEPROM flotox 24C02A 24C04A 24CXX 24LCXX 93CXX sem 2107

    24C02A

    Abstract: 24C04A 24CXX 24LCXX 28CXX 93CXX EEPROM flotox
    Text: EEPROM Endurance INTRODUCTION Circuit Technology These cells are then structured in either an 8 or 16 bit word organization for data storage with between 32 words 256 byte device and 8K words (64K device) using standard binary decoding schemes found industry wide on memory devices. Data can then be transmitted either into the device for storage or read from the


    Original     		PDF DS21055B-page 24C02A 24C04A 24CXX 24LCXX 28CXX 93CXX EEPROM flotox

    s2914a

    Abstract: ak6416af s2914 ATMEL 24C32A S-29255 AK6416A AK93C12A national semiconductor cmos ATMEL 93C86 93c45
    Text: データシート マイクロワイヤー TMタイプ . SCIタイプ（Serial Communication Interface） . I2CTMタイプ .


    Original     		PDF AK93CXX SCIAK64XX DACEEPROMAK98XX ST25C16 ST25W16 NM24C17LZ AK6010A AT24C32 CAT24C32 CAT24WC32 s2914a ak6416af s2914 ATMEL 24C32A S-29255 AK6416A AK93C12A national semiconductor cmos ATMEL 93C86 93c45

    hot electron devices

    Abstract: SGS-Thomson ball grid array VLSI Vision
    Text: CHAPTER 6 TOWARDS THE FUTURE “Tomorrow will differ from yesterday. It will be new and depend on us. It is to be invented more than discovered” 6.1 VISION Vision 2000 By the year 2000, be among the top world suppliers and be recognized as the “best-inclass” in service and environmental protection,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: A HIGH-DENSITY DUAL-POLYSILICON 5 VOLT-ONLY EEPROM CELL R. Lambertson, A. Malazgirt, C. Lo, A. Vahidimowlavi, P. Holland, M. Fliesler, H. Gee Xicor Inc, 851 Buckeye Court, Milpitas, California, 95035 ABSTRACT In this paper a novel full-function EEPROM cell


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON M9306 •LlêïïO M O igS 256 BIT 16x16 SERIAL NMOS EEPROM SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V±10%) TTL COMPATIBLE 16 x16 READ/WRITE MEMORY LOW STANDBY CURRENT LOW COST SOLUTION FOR NON VOLATILE ERASE AND WRITE MEMORY RELIABLE FLOTOX PROCESS


    OCR Scan     		PDF M9306 16x16) M9306

    Untitled

    Abstract: No abstract text available
    Text: M9346 ADVANCE DATA 1024 BIT 64 x 16 SERIAL EEPROM • • • • • • • • • LOW COST SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V=t 10%) TTL COMPATIBLE 6 4 x 1 6 READ/WRITE MEMORY LOW STANDBY POWER NON-VOLATILE ERASE AND WRITE RELIABLE FLOTOX PROCESS


    OCR Scan     		PDF M9346 64x16 M9346 64x16. 16-bit

    M9306B1

    Abstract: M9306 M9306B1-B6
    Text: as 256 BIT 1 6 x16 SERIAL EEPROM • • • • • • • • LOW COST SINGLE SUPPLY (5V ±10°/o) TTL CO M PATIBLE 1 6 x 1 6 READ/W RITE M EM O RY LOW STANDBY POWER NON-VOLATILE RELIABLE FLOTOX PROCESS EXTENDED TEM PERATURE RANGE ^ ’ I 1 8 F M Plastic


    OCR Scan     		PDF M9306 rI6a16) 16x16) 16x16 M9306B1 M9306B1-B6

    eurosil

    Abstract: eurosil clock EUROSIL ELECTRONIC GMBH Eurosil Electronic Z6210PC Block Diagram of 8057 e6210
    Text: e e6210 64 BIT SERIAL EEPROM Pad configuration Features • 64 bit serial organisation • • • • • Bits individually addressable 2 Volt operation 100 000 erase/write cycles Self timed programming cycle 10 nA typ stand-by current ss J] CLK ;~3 JÌ


    OCR Scan     		PDF e6210 Z6210PC e6210 Z6210f4aà eurosil eurosil clock EUROSIL ELECTRONIC GMBH Eurosil Electronic Block Diagram of 8057

    FZj 111

    Abstract: M9346B1 M9346B6 M9346M1 M9346M6
    Text: SGS-THOMSON M9346 ¡y 1024 BIT 64 x 16 SERIAL NMOS EEPROM • SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V±10°/o) ■ TTL COMPATIBLE ■ 6 4 x 1 6 READ/WRITE MEMORY ■ LOW STANDBY CURRENT ■ LOW COST SOLUTION FOR NON VOLATILE ERASE AND WRITE MEMORY


    OCR Scan     		PDF M9346 64x16 M9346 14-LEAD FZj 111 M9346B1 M9346B6 M9346M1 M9346M6

    M9306B1

    Abstract: M9306 M9306B6 M9306M1 M9306M6
    Text: f Z J SGS-THOMSON M9306 256 BIT 16x 1 6 SERIAL NMOS EEPROM • SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V ± 10%) ■ TTL COMPATIBLE ■ 1 6 x 1 6 READ/WRITE MEMORY ■ LOW STANDBY CURRENT V * ■ LOW COST SOLUTION FOR NON VOLATILE ERASE AND WRITE MEMORY


    OCR Scan     		PDF M9306 16x16) 16x16 M9306 O13-D/1 M9306B1 M9306B6 M9306M1 M9306M6

    M9306M6

    Abstract: M9306 M9306B1 M9306B6 M9306M1
    Text: f Z J SGS-THOMSON M9306 256 BIT 16x 1 6 SERIAL NMOS EEPROM • SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V ± 10%) ■ TTL COMPATIBLE ■ 1 6 x 1 6 READ/WRITE MEMORY ■ LOW STANDBY CURRENT V * ■ LOW COST SOLUTION FOR NON VOLATILE ERASE AND WRITE MEMORY


    OCR Scan     		PDF M9306 16x16) 16x16 M9306 O13-D/1 M9306M6 M9306B1 M9306B6 M9306M1

    M9346B1

    Abstract: poo1 M9346B6 M9346M1 M9346M6
    Text: T/ SGS-THOMSON M9346 ilL ir a M O ig S 1024 BIT 6 4 x 16 SERIAL NMOS EEPROM • SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V±10°/o) ■ TTL COMPATIBLE ■ 6 4 x 1 6 READ/WRITE MEMORY ■ LOW STANDBY CURRENT ■ LOW COST SOLUTION FOR NON VOLATILE ERASE AND WRITE MEMORY


    OCR Scan     		PDF M9346 64x16 M9346 14-LEAD M9346B1 poo1 M9346B6 M9346M1 M9346M6

    M9306B1

    Abstract: M9306B6 m9306
    Text: F Z J * 7 #« S G S -T H O M S O N [ * K [ l L [ i § ¥ [ i » 0(gS M 9306 256 BIT (16x16 SERIAL NMOS EEPROM • SINGLE SUPPLY READ/WRITE/ERASE OPERATIONS (5V ± 10%) ■ TTL COMPATIBLE ■ 1 6 x 1 6 READ/WRITE MEMORY . X ■ LOW STANDBY CURRENT ■ LOW COST SOLUTION FOR NON VOLATILE


    OCR Scan     		PDF 16x16) M9306 D15-D0 M9306 M9306B1 M9306B6 M9306M1 M9306M6

    stc 8000 h

    Abstract: No abstract text available
    Text: bDE D SHARP CORP • filfiOTTfl OODTSSS 156 « S R P J 7 ^ - ‘? 4 NEW PRODUCT INFORMATION LH6N00 ■ CMOS 256K 32Kx8-btt Non-Volatile Dynamic RAM Description Pin Connections The LH6N00 is a high speed 256K (32Kx8) bit pseudo-static NVRAM which is fabricated using Sharp


    OCR Scan     		PDF LH6N00 32Kx8-btt) LH6N00 32Kx8) stc 8000 h

    Untitled

    Abstract: No abstract text available
    Text: SHARP CORP ,n r bDE i\ T> _ • „ Ô1ÛD7TÛ OGC H Sb B 224 «SRPJ T- HÌ-2 S- ^ 7 LH6N10/LH6N11 ■ CMOS 1M 128Kx8 Non-Volatile RAM Pin Connections Description The LH6N10/11 is a high speed 1M (128KX8) bit pseudo-static NVRAM which is fabricated using Sharp


    OCR Scan     		PDF LH6N10/LH6N11 LH6N10/11 128KX8) LH6N10 LH6N11 LH6N10/LH6N11 100ns 32-pin

    SC-15

    Abstract: EEPROM flotox Japanese Transistor Cross References
    Text: u these components. In this paper, we will focus on the technology factors by comparing the three dom ­ inant E2 technologies to date, and giving our own viewpoint on the development in the market place. COMPARISON AND TRENDS IN TO DAY’S DOM INANT E2 TECHNOLOGIES


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