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    EEPROM 28C65 Search Results

    EEPROM 28C65 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    X28C512JI-12 Rochester Electronics LLC EEPROM, 64KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
    FM93CS46M8 Rochester Electronics LLC EEPROM, 64X16, Serial, CMOS, PDSO8, 0.150 INCH, PLASTIC, SO-8 Visit Rochester Electronics LLC Buy
    NM93C56EN Rochester Electronics LLC EEPROM, 128X16, Serial, CMOS, PDIP8, PLASTIC, DIP-8 Visit Rochester Electronics LLC Buy
    X28C512DM-15 Rochester Electronics LLC EEPROM, 64KX8, 150ns, Parallel, CMOS, CDIP32, HERMETIC SEALED, CERDIP-32 Visit Rochester Electronics LLC Buy

    EEPROM 28C65 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CAT28C65B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.


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    PDF CAT28C65B 64K-Bit 90/120/150ns CAT28C65B MD-1009,

    CAT28C65

    Abstract: 1N914 28C65B CAT28C65B
    Text: CAT28C65B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.


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    PDF CAT28C65B 64K-Bit 90/120/150ns CAT28C65B MD-1009, CAT28C65 1N914 28C65B

    Untitled

    Abstract: No abstract text available
    Text: CAT28C65B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.


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    PDF CAT28C65B 64K-Bit 90/120/150ns CAT28C65B MD-1009,

    28C65b

    Abstract: CAT28C65B 1N914 CAT28C65BNI-15T
    Text: CAT28C65B CAT28C65B 64K-Bit CMOS PARALLEL EEPROM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation: – Active: 25 mA max. – Standby: 100 µA max.


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    PDF CAT28C65B 64K-Bit 90/120/150ns CAT28C65B 28C65b 1N914 CAT28C65BNI-15T

    CAT28C65B

    Abstract: eeprom catalyst 1N914 28C65B CAT28C65BNI-15T
    Text: CAT28C65B H EE GEN FR ALO CAT28C65B 64K-Bit CMOS PARALLEL EEPROM LE A D F R E ETM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation:


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    PDF CAT28C65B 64K-Bit 90/120/150ns CAT28C65B eeprom catalyst 1N914 28C65B CAT28C65BNI-15T

    CAT28C65B

    Abstract: No abstract text available
    Text: CAT28C65B H EE GEN FR ALO CAT28C65B 64K-Bit CMOS PARALLEL EEPROM LE A D F R E ETM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation:


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    PDF CAT28C65B 64K-Bit 90/120/150ns CAT28C65B

    28C65B

    Abstract: CAT28C65B 1N914 CAT28C65BNI-15T
    Text: CAT28C65B H EE GEN FR ALO CAT28C65B 64K-Bit CMOS PARALLEL EEPROM LE A D F R E ETM FEATURES • Fast read access times: ■ Commercial, industrial and automotive – 90/120/150ns temperature ranges ■ Low power CMOS dissipation: ■ Automatic page write operation:


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    PDF CAT28C65B 64K-Bit 90/120/150ns 28C65B CAT28C65B 1N914 CAT28C65BNI-15T

    Device-List

    Abstract: CF775 MICROCHIP 24LC211 ae29F2008 im4a3-32 CNV-PLCC-MPU51 ep320ipc cf745 04 p ALL-11P3 29lv640
    Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which


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    PDF ALL-11 Z8E000 ADP-Z8E001 Z8E001 Z90231 ADP-Z90259-SD Z90241 ADP-Z90241-SD Device-List CF775 MICROCHIP 24LC211 ae29F2008 im4a3-32 CNV-PLCC-MPU51 ep320ipc cf745 04 p ALL-11P3 29lv640

    Device-List

    Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
    Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which


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    PDF ALL-11 Z86E73 Z86E83 Z89371 ADP-Z89371/-PL Z8E000 ADP-Z8E001 Z8E001 Device-List cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2

    eeprom 2816

    Abstract: 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864
    Text: SEEQ TECHNOLOGY EEPROM CROSS REFERENCE Alternate Manufacturer Part # EEPROM Configuration SEEQ Part # AMD AMD AMD Atmel Atm el Atmel Atmel Atmel Atm el Atmel Atmel Atmel Atm el Atm el Atm el Atmel Atmel Cypress Cypress Cypress Exel Exel Exel Exel Intel Intel


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    PDF 2864B AT28HC16 AT28C64 AT28C64E AT28C64X AT28HC64 AT28PC64 AT28C64F AT28C2S6 AT28C256F eeprom 2816 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7T L414E G G lb ö f lO TSS CMOS EEPROM KM28C64A/KM28C65A 8K x8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Temperature Range — KM28C64A/65A: Commercial — KM28C64AI/65AI: Industrial • Simple Byte Write & Page Write


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    PDF L414E KM28C64A/KM28C65A KM28C64A/65A: KM28C64AI/65AI: KM28C65A) 64-Byte 120ns

    Untitled

    Abstract: No abstract text available
    Text: E/M28C65 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • SEEQ's E/M28C65 is a CMOS 5V only, 8 K x 8 Electrically Erasable Programmable Read Only Memory EEPROM . It is manufactured using SEEQ's advanced 1.25 micron CMOS Process and is available in a 28 pin Cerdip package


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    PDF E/M28C65 E/M28C65 MD400026/C 28C65

    KM28C64A20

    Abstract: KM28C64A-20
    Text: KM28C64A/KM28C65A CMOS EEPROM 8 K /8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • Sim ple Byte W rite & Page W rite — Single TTL Level W rite Signal


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    PDF KM28C64A/KM28C65A 28C64A/65A: I/65A 28C65A) 64-Byte 150ns 1555H KM28C64A20 KM28C64A-20

    64x16

    Abstract: 8DIP 28-DIP KM28C64B 128X16
    Text: FUNCTION GUIDE MEMORY ICs 2.5 EEPROM 2 K b it 64K bit Remark 16x16 1MHz CMOS Ext.-timed 8DIP/8SOP Now 1MHz CMOS Self-timed 8DIP/8SOP Now KM93C46/G/GD/I 64x16 1MHz CMOS Self-timed 8DIP/8SOP Now KM93C46V/VG/VGD/I 64x16 250KHZ CMOS 3-OV-Operation 8DIP/8SOP Now


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    PDF KM93C06/G/GD/I KM93C07/G/GD/I 16x16 16x16 KM93C46/G/GD/I KM93C46V/VG/VGD/I 64x16 128x8 250KHZ 8DIP 28-DIP KM28C64B 128X16

    Untitled

    Abstract: No abstract text available
    Text: 2231 CALLE DE LUNA, SANTA CLARA, CA 95054 Telephone: 408 748-7700 CAT28C65A 8K x 8 BIT CMOS EEPROM DESCRIPTION FEATURES T h e C A T 2 8C 6 5A is a fast, low power, 5V-only C M O S E E P R O M requiring a simple interface for insystem programming. On-chip address and data


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    PDF CAT28C65A

    TEA 1511

    Abstract: 28C65A CAT28C65A 28C65A-20
    Text: CATALYST SEMICONDUCTOR S3E D • C A T A L Y S T 1.1 bat IS '0001034 5 ■ . S E M IC O N D U C T O R ,IN C . 2231 CALLE DE LUNA, SANTA CLARA, CA 950S4 Telephone: 408 748-7700 CAT28C65A 8Kx 8 BIT CMOS EEPROM DESCRIPTION FEATURES The CAT28C65A is a fast, low power, 5V-only


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    PDF 950S4 CAT28C65A CAT28C65A QDD1Q43 28C65A TEA 1511 28C65A-20

    Untitled

    Abstract: No abstract text available
    Text: 28C65 Technology, Incorporated Timer E2 64K Electrically Erasable PROM August 1992 Features • Military, Extended and Commercial Temperature Range • -5 5 ° Cto +125° C Operation Military • -4 0 ° C to +85° C Operation (Extended) • 0° C to +70° C Operation (Commercial)


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    PDF 28C65 MD400110/A Cto70Â

    eeprom 28c65

    Abstract: 28C65-250 28C65 28C65 seeq
    Text: 28C65 Technology, Incorporated Timer E2 64K Electrically Erasable PROM August 1992 Features Military, Extended and Commercial Temperature Range • - 5 5 ° C to +125° C Operation Military • - 4 0 ° C t o +85° C Operation (Extended) • 0° C to +70° C Operation (Commercial)


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    PDF 28C65 28C65 MD400110/A eeprom 28c65 28C65-250 28C65 seeq

    28C65

    Abstract: 28C65 seeq eeprom 28c65
    Text: 28C65 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • CMOS Technology ■ Low Power • SO mA Active • 150 IxA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte Write Time ■ Byte Write Mode ■ Write Cycle Completion Indication


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    PDF 28C65 28C65 MD400025/C 28C65 seeq eeprom 28c65

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


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    PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    28C65 seeq

    Abstract: M28C65 A6A12
    Text: E/M28C65 Timer E2 64K Electrically Erasable PROM October 1989 Features Description • Military and Extended Temperature Range • - 5 5 ° C to + 125° C Operation Military . _ 40° C to + 85° C Operation (Extended) ■ ■ CMOS Technology Low Power • 60 mA Active


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    PDF E/M28C65 MD40002B/C E/M28C65 28C65 MD400026/C 28C65 seeq M28C65 A6A12

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


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    PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    28C65

    Abstract: eeprom 28c65 28C65-25 28C64 EEPROM WE VQE 11 E WE VQE 23 F WE VQE 23 E WE VQE 24 E 28c64 ram MBM28C65-25
    Text: FU JITSU CMOS 65536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE ROM MBM28C65-25 MBM 28C65-35 S e p te m b e r 1 9 8 7 E d itio n 2 .0 CMOS 8192 x 8 EL E C T R IC A L LY ERASABLE PROGRAM M ABLE READ O N L Y M EM O RY The Fujitsu MBM 28C65 is a high speed 65,536 bits CMOS e lectrically erasable


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    PDF 65536-BIT MBM28C65-25 MBM28C65-35 28C65 28-pin eeprom 28c65 28C65-25 28C64 EEPROM WE VQE 11 E WE VQE 23 F WE VQE 23 E WE VQE 24 E 28c64 ram

    Untitled

    Abstract: No abstract text available
    Text: 28C65 Timer E2 64K Electrically Erasable PR O M October 1989 Features Description • C M O S Technology ■ Lo w P ow er SEEO's 28C65 is a CMOS 5V only, 8K x 8 Electrically Erasable Programmable Read Only Memory EEPHOM . It is manufactured using SEEQ’s advanced 1.25 micron


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    PDF 28C65 28C65 MD400025/C