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    EDO 16M X 32 Search Results

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    edo dram 50ns 72-pin simm

    Abstract: No abstract text available
    Text: UG216E32R4HSG T Data sheets can be downloaded at www.unigen.com 64M Bytes (16M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM w/Voltage Converter based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)


    Original     		PDF UG216E32R4HSG 16Mbits 72-Pin A0-A11 A0-A11 edo dram 50ns 72-pin simm

    Untitled

    Abstract: No abstract text available
    Text: UG216E32R4HST-6EK Data sheets can be downloaded at www.unigen.com 64M Bytes 16M x 32 bits EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM w/Voltage Convertor based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)


    Original     		PDF UG216E32R4HST-6EK UG216E32R4HST-6EK 16Mbits 72-Pin

    edo dram 60ns 72-pin simm

    Abstract: edo dram 50ns 72-pin simm
    Text: UG216E32R4HK S G(T) Data sheets can be downloaded at www.unigen.com 64M Bytes (16M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM w/Voltage Converter based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)


    Original     		PDF UG216E32R4HK 16Mbits 72-Pin A0-A11 A0-A11 edo dram 60ns 72-pin simm edo dram 50ns 72-pin simm

    Untitled

    Abstract: No abstract text available
    Text: UG8M163224QRR-6 Data sheets can be downloaded at www.unigen.com EDO MODE DRAM MODULE 64M Bytes 16M x 32 bits EDO Mode Unbuffered SIMM w/Voltage Converter based on 8 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM


    Original     		PDF UG8M163224QRR-6 750mil) UG8M163224QRR-6 16Mbits usQ33 A0-A11 A0-A11

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MCM318165CV/D SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, 1K MCM318165CV EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.40µ CMOS high–speed


    Original     		PDF MCM318165CV/D MCM318165CV MCM318165CV)

    MCM518165BT60

    Abstract: MCM518165BJ60 motorola dram MCM518165B MCM518165B-70 MCM516165BJ60
    Text: MOTOROLA Order this document by MCM516165B/D SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information MCM516165B 16M CMOS Wide DRAM Family EDO 4096 Cycle Refresh EDO, 1M x 16, 1K, and 4K Refresh The family of 16M Dynamic RAMs is fabricated using 0.50µ CMOS high–speed


    Original     		PDF MCM516165B/D MCM516165B MCM516165B) MCM518165B) MCM516165B MCM518165B MCM516165B/D* MCM518165BT60 MCM518165BJ60 motorola dram MCM518165B MCM518165B-70 MCM516165BJ60

    motorola dram

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MCM516165BV/D SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information MCM516165BV 16M CMOS Wide DRAM Family EDO 4096 Cycle Refresh EDO, 1M x 16, 1K, and 4K Refresh The family of 16M Dynamic RAMs is fabricated using 0.50µ CMOS high–speed


    Original     		PDF MCM516165BV/D MCM516165BV MCM516165BV) MCM518165BV) MCM516165BV MCM518165BV MCM516165BV/D* motorola dram

    IBM0164405B16M

    Abstract: IBM0164405BJ3C-50 IBM0164405BJ3C-60 IBM0164405P16M TSOP-32 SA14-4237-02
    Text: IBM0164405B16M x 413/11, 3.3V, EDO. IBM0164405P16M x 413/11, 3.3V, LP, SR, EDO. IBM0164405B IBM0164405P 16M x 4 13/11 EDO DRAM ADVANCED Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance:


    Original     		PDF IBM0164405B16M IBM0164405P16M IBM0164405B IBM0164405P 104ns IBM0164405BJ3C-50 IBM0164405BJ3C-60 TSOP-32 SA14-4237-02

    IBM0165405B16M

    Abstract: IBM0165405BJ3C-50 IBM0165405BJ3C-60 IBM0165405P16M TSOP-32
    Text: IBM0165405B16M x 412/12, 3.3V, EDO. IBM0165405P16M x 412/12, 3.3V, LP, SR, EDO. IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM ADVANCED Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance:


    Original     		PDF IBM0165405B16M IBM0165405P16M IBM0165405B IBM0165405P 104ns SA14-4238-02 IBM0165405BJ3C-50 IBM0165405BJ3C-60 TSOP-32

    S609

    Abstract: sfhg MCM218165B 891lns
    Text: Order this document MOTOROLA by MCM218165B/O SEMICONDUCTOR TECHNICAL DATA IMx16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165B EDO 1024 Cycle Refr~~:,. ,;,.’.,> , -.c~,.,. The family of 16M Dynamic RAMs is fabricated using 0.4w CMOS


    Original     		PDF MCM218165B/O IMx16 MCM218165B MCM218165B 244-S609 l-800-774-1848 511ing MCM218165B/D S609 sfhg 891lns

    SL32D4C16M4E-A60V

    Abstract: 16MX32
    Text: SL32D4C16M4E-AxxV 16M X 32 Bits DRAM SO-DIMM with Extended Data Out EDO FEATURES GENERAL DESCRIPTION • The SiliconTech SL32D4C16M4E-AxxV is a 16M x 32 bits Dynamic RAM memory module. The SL32D4C16M4E-AxxV consists of eight CMOS 16M x 4 bits DRAMs in 32-pin 400-mil


    Original     		PDF SL32D4C16M4E-AxxV SL32D4C16M4E-AxxV 32-pin 400-mil 72-pin 104ns 72-pin A0-A11 SL32D4C16M4E-A60V 16MX32

    edo dram 50ns 72-pin simm

    Abstract: UG232W3264HSG
    Text: UG232W3264HSG T Data sheets can be downloaded at www.unigen.com 128M Bytes (32M x 32 bits) EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM based on 16 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM The UG232W3264HSG(T) is a 32Mbits x 32 EDO


    Original     		PDF UG232W3264HSG 32Mbits 72-Pin 104ns A0-A11 A0-A11 edo dram 50ns 72-pin simm

    Untitled

    Abstract: No abstract text available
    Text: UG232W3264HSG-6 Data sheets can be downloaded at www.unigen.com 128M Bytes 32M x 32 bits EDO MODE DRAM MODULE EDO Mode Unbuffered SIMM based on 16 pcs 16M x 4 DRAM with LVTTL, 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM The UG232W3264HSG-6 is a 32Mbits x 32 EDO


    Original     		PDF UG232W3264HSG-6 72-Pin UG232W3264HSG-6 32Mbits A0-A11 A0-A11

    Untitled

    Abstract: No abstract text available
    Text: 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 168pin unbuffered DIMM Module with serial presence detect Advanced Information • 168 Pin JEDEC Standard, Unbuffered 8 Byte


    Original     		PDF 64-Bit 72-Bit HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 168pin GU-60 V1605/45GU-50/-60 L-DIM-168-14

    Untitled

    Abstract: No abstract text available
    Text: UG532W7288JSR 32M x 72 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 18 pcs 16M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT Front View 168-Pin DIMM FEATURES Single 3.3V ± 10% power supply Hyper Page Mode (EDO) operation CAS-before-RAS Refresh capability


    Original     		PDF UG532W7288JSR 1250mil) 168-Pin

    MCM218165BVJ60

    Abstract: 4036B
    Text: MOTOROLA Order this document by MCM218165BV/D SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165BV EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4µ CMOS high–speed silicon–gate process technology. It includes devices organized as


    Original     		PDF MCM218165BV/D MCM218165BV MCM218165BV MCM218165BVJ60 4036B

    4253-01

    Abstract: IBM0165405B16M IBM0165405BJ3D-50 IBM0165405BJ3D-60 IBM0165405P16M TSOP-32
    Text: Discontinued 12/98 - last order; 3/99 last ship IBM0165405B16M x 412/12, 3.3V, EDO. IBM0165405P16M x 412/12, 3.3V, LP, SR, EDO. IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply


    Original     		PDF IBM0165405B16M IBM0165405P16M IBM0165405B IBM0165405P 104ns 4253-01 IBM0165405BJ3D-50 IBM0165405BJ3D-60 TSOP-32

    IBM0165405BJ5B-50

    Abstract: IBM0165405BJ5B-60 IBM0165405P16M IBM0165405B16M
    Text: IBM0165405B16M x 412/12, 3.3V, EDO. IBM0165405P16M x 412/12, 3.3V, LP, SR, EDO. IBM0165405B IBM0165405P 16M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization • Read-Modify-Write • Single 3.3 ± 0.3V power supply • Performance: • Extended Data Out Hyper Page Mode


    Original     		PDF IBM0165405B16M IBM0165405P16M IBM0165405B IBM0165405P 104ns IBM0165405BJ5B-50 IBM0165405BJ5B-60

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module HYM 64V1605GU-50/-60/-70 HYM 64V1645GU-50/-60/-70 HYM 72V1605GU-50/-60/-70 HYM 72V1645GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information


    OCR Scan     		PDF 64-Bit 72-Bit 64V1605GU-50/-60/-70 64V1645GU-50/-60/-70 72V1605GU-50/-60/-70 72V1645GU-50/-60/-70 168pin E3Sb05 fl23SbOS

    24C02 wp st

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module HYM HYM HYM HYM 168pin unbuffered DIMM Module with serial presence detect 64V1605GU-50/-60/-70 64V1645GU-50/-60/-70 72V1605GU-50/-60/-70 72V1645GU-50/-60/-70 Preliminary Information


    OCR Scan     		PDF 64-Bit 72-Bit 168pin 64V1605GU-50/-60/-70 64V1645GU-50/-60/-70 72V1605GU-50/-60/-70 72V1645GU-50/-60/-70 L-DIM-168-14 V1605/45GU-50/-60/-70 24C02 wp st

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 168pin unbuffered DIMM Module with serial presence detect • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module


    OCR Scan     		PDF 64-Bit 72-Bit HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 168pin V1605/45G U-50/-60 L-DIM-168-14

    Untitled

    Abstract: No abstract text available
    Text: HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 168pin unbuffered DIMM Module with serial presence detect • 168 Pin JE D E C Standard, Unbuffered 8 Byte Dual In-Line Memory Module


    OCR Scan     		PDF 64-Bit 72-Bit 168pin HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 V1605/45GU-50/-60

    555E

    Abstract: No abstract text available
    Text: Order this document by MCM218165B/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165B EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4|i CMOS high-speed silicon-gate process technology. It includes devices organized as


    OCR Scan     		PDF MCM218165B/D MCM218165B 555E

    cm218

    Abstract: MCM21
    Text: Order this document by MCM218165BV/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M X 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165BV EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4^ CMOS high-speed silicon-gate process technology. It includes devices organized as


    OCR Scan     		PDF MCM218165BV/D CM218165BV cm218 MCM21