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    Microchip Technology Inc EDI88512LPA25N36M

    (Alt: EDI88512LPA25N36M)
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    EDI88512LP Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EDI88512LP100CB White Microelectronics 100ns 5V power supply 512K x 8 monolithic SRAM CMOS Original PDF
    EDI88512LP100CC White Microelectronics 100ns 5V power supply 512K x 8 monolithic SRAM CMOS Original PDF
    EDI88512LP100CI White Microelectronics 100ns 5V power supply 512K x 8 monolithic SRAM CMOS Original PDF
    EDI88512LP100CM White Microelectronics 100ns 5V power supply 512K x 8 monolithic SRAM CMOS Original PDF
    EDI88512LP100NB White Microelectronics 100ns 5V power supply 512K x 8 monolithic SRAM CMOS Original PDF
    EDI88512LP100NC White Microelectronics 100ns 5V power supply 512K x 8 monolithic SRAM CMOS Original PDF
    EDI88512LP100NI White Microelectronics 100ns 5V power supply 512K x 8 monolithic SRAM CMOS Original PDF
    EDI88512LP100NM White Microelectronics 100ns 5V power supply 512K x 8 monolithic SRAM CMOS Original PDF
    EDI88512LP70CB White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512LP70CC White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512LP70CI White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512LP70CM White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512LP70NB White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512LP70NC White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512LP70NI White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512LP70NM White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512LP85CB White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512LP85CC White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512LP85CI White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    EDI88512LP85CM White Electronic Designs 512K x 8 Monolithic SRAM CMOS Original PDF
    ...

    EDI88512LP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD transistor n36

    Abstract: smd transistor A13 transistor smd f36 CERAMIC FLATPACK SMD a7 Transistor smd transistor A8 EDI88128CS EDI88512CA EDI88512LPA 5962-95600XXMYA
    Text: White Electronic Designs EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. Access Times of 15, 17, 20, 25, 35, 45, 55ns The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. All 32 pin packages


    Original
    PDF EDI88512CA 512Kx8 EDI88512CA EDI88128CS. 512Kx8 MIL-STD-883 SMD transistor n36 smd transistor A13 transistor smd f36 CERAMIC FLATPACK SMD a7 Transistor smd transistor A8 EDI88128CS EDI88512LPA 5962-95600XXMYA

    EDI88257CA

    Abstract: EDI88512CA
    Text: EDI88257CA White Electronic Designs 256Kx8 Monolithic SRAM FEATURES The EDI88257CA is a 2 Megabit 256Kx8 bit Monolithic CMOS Static RAM. „ Access Times of 20, 25, 35, 45, 55ns „ Data Retention Function LPA Versions „ TTL Compatible Inputs and Outputs


    Original
    PDF EDI88257CA 256Kx8 EDI88257CA 512Kx8 EDI88512CA. 256Kx8 EDI88257LPA, MIL-PRF-38535. EDI88512CA

    Untitled

    Abstract: No abstract text available
    Text: EDI88512C 512Kx8 Monolithic SRAM, CMOS FEATURES  512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM.  Random Access Memory The 32 pin DIP pinout adheres to the JEDEC evolutionary standard for the four megabit device. Both the DIP and CSOJ packages


    Original
    PDF EDI88512C 512Kx8 100ns EDI88512C EDI88128C.

    8 pin ceramic dip microsemi

    Abstract: CERAMIC FLATPACK
    Text: EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES  Access Times of 15, 17, 20, 25, 35, 45, 55ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM.  Data Retention Function LPA version The 32 pin DIP pinout adheres to the JEDEC evolutionary standard


    Original
    PDF EDI88512CA 512Kx8 512Kx8 8 pin ceramic dip microsemi CERAMIC FLATPACK

    EDI88257CA

    Abstract: EDI88512CA
    Text: White Electronic Designs EDI88257CA 256Kx8 Monolithic SRAM FEATURES The EDI88257CA is a 2 Megabit 256Kx8 bit Monolithic CMOS Static RAM. Access Times of 20, 25, 35, 45, 55ns Data Retention Function LPA Versions The 32 pin DIP pinout adheres to the JEDEC evolutionary


    Original
    PDF EDI88257CA 256Kx8 EDI88257CA 512Kx8 EDI88512CA. 256Kx8 EDI88257LPA, MIL-PRF-38535. EDI88512CA

    Untitled

    Abstract: No abstract text available
    Text: EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES  Access Times of 15, 17, 20, 25, 35, 45, 55ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM.  Data Retention Function LPA version The 32 pin DIP pinout adheres to the JEDEC evolutionary standard


    Original
    PDF EDI88512CA 512Kx8 EDI88512CA EDI88128CS. 512Kx8 MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: EDI88257CA 256Kx8 Monolithic SRAM FEATURES The EDI88257CA is a 2 Megabit 256Kx8 bit Monolithic CMOS Static RAM.  Access Times of 20, 25, 35, 45, 55ns  Data Retention Function LPA Versions The 32 pin DIP pinout adheres to the JEDEC evolutionary standard


    Original
    PDF EDI88257CA 256Kx8 EDI88257CA 512Kx8 EDI88512CA. 256Kx8 EDI88257LPA, EDI88512LP

    Untitled

    Abstract: No abstract text available
    Text: EDI88512CA-XMXG WPS512K8X-XRJXG 512Kx8 Plastic Monolithic SRAM CMOS WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military device.


    Original
    PDF EDI88512CA-XMXG WPS512K8X-XRJXG 512Kx8 EDI88512CA-XMXG MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: EDI88512C HI-RELIABILITY PRODUCT 512Kx8 Monolithic SRAM CMOS FEATURES • 512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. ■ Random Access Memory • Access Times of 70, 85, 100ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs


    Original
    PDF EDI88512C 512Kx8 EDI88512C 100ns EDI88128C. EDI88512LP) 512Kx8 MIL-STD-883

    EDI88128C

    Abstract: EDI88512C
    Text: EDI88512C HI-RELIABILITY PRODUCT 512Kx8 Monolithic SRAM CMOS FEATURES • 512Kx8 bit CMOS Static The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. ■ Random Access Memory • Access Times of 70, 85, 100ns • Data Retention Function LP version • TTL Compatible Inputs and Outputs


    Original
    PDF EDI88512C 512Kx8 EDI88512C 100ns EDI88128C. EDI88512LP) 512Kx8 MIL-STD-883 EDI88128C

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs EDI88512CA-RP 512Kx8 Plastic Monolithic SRAM CMOS WEDC's ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military device.


    Original
    PDF 512Kx8 EDI88512CA-RP MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: EDI88512CA-RP HI-RELIABILITY PRODUCT 512Kx8 Plastic Monolithic SRAM CMOS FEATURES WEDC's a ruggedized plastic 512Kx8 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability available in a full military


    Original
    PDF EDI88512CA-RP 512Kx8 MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI88512C ELECTRONIC DESIGNS INC. Four Megabit Monolithic SRAM 512Kx8 Static RAM r a i u i i i M c w CMOS, Monolithic Features The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC stan­ dard for the four megabit device and is a pin for pin


    OCR Scan
    PDF EDI88512C 512Kx8 EDI88512C EDI8M8512C. 128Kx EDI88128C. EDI88512LP) MIL-STD-883,

    GDIP1-T32

    Abstract: CY7C1048-45F CY7C1048 qml-38535 5962-95600 5962-9560003MXA smd marking code tm 5962-9560004MYA ed188512 EDI88512CA20N36B
    Text: REVISIONS LTR ] DESCRIPTION DATE APPRO VED YR-MO-DA A Change minimum limit of dimension Q for case outline T. Changes in accordance with NOR 5962-R 145-97. 96-11-27 Raymond Monnin B Add note 4 / to \ \ j\ _ q z ’ ^ D R ’ anc* *R 'n tab'e Add note 5/ to % |_qx.


    OCR Scan
    PDF 5962-R145-97. OEU86 TD0470Ã D032M4T GDIP1-T32 CY7C1048-45F CY7C1048 qml-38535 5962-95600 5962-9560003MXA smd marking code tm 5962-9560004MYA ed188512 EDI88512CA20N36B

    EDI88512CA20NB

    Abstract: EDI88512CA45 and45ns TM315
    Text: EDI88512CA m o \ ELECTRONIC D ESG N S INC. Four Megabit Monolithic SRAM 512Kx8 Static RAM CMOS, Monolithic r a The 32 pin DIP pinout adheres to the JEDEC evolu­ tionary standard for the four megabit device and is a replacement for the 512K x 8 module, EDI8M8512C. All


    OCR Scan
    PDF EDI88512CA 512Kx8 EDI88512CA EDI8M8512C. EDI88128CS. EDI88512CA20NB EDI88512CA45 and45ns TM315

    ED188512CA20N36B

    Abstract: ED188512CA25CB ED188512CA20 75B7 EDI88512CA20N36B EDI88512LPA20F32B EDI88128CS EDI88512CA EDI88512LPA EDI8M8512C
    Text: W5X EDI88512CA 512Kx8 Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory The EDI88512CA is a 4 megabit Monolithic CMOS Static • Access Times: 17*, 2 0 ,2 5 ,3 5 , and 45ns • Data Retention Function LP version


    OCR Scan
    PDF EDI88512CA 512Kx8 15qC/W 20X/W 01581USA EDIBB512CA 6/96ECO ED188512CA20N36B ED188512CA25CB ED188512CA20 75B7 EDI88512CA20N36B EDI88512LPA20F32B EDI88128CS EDI88512CA EDI88512LPA EDI8M8512C

    C27A8

    Abstract: edibb257c EDI88257C EDI88512C EDI8M8257C
    Text: ^EDI EDI88257C 256Kx8 Static Ram ELECTRONIC DESIGNS, INC 256Kx8 Static RAM CMOS, Module Features The EDI88257C is a 2 megabit Monolithic CMOS Static RAM. 256Kx8 bit CMOS Static The 32 pin DIP pinout adheres to the J EDEC standard for the two Random Access Memory


    OCR Scan
    PDF EDI88257C 256Kx8 100ns EDI88257C EDI8M8257C. 512Kx8 EDI88512C. C27A8 edibb257c EDI88512C EDI8M8257C

    75B7

    Abstract: EDI88512CA20MM EDI88512CA-RP EDI88512LPA EDI88512CA17MI
    Text: EDI88512CA-RP W 3 X e le c tro n ic designs, in c . 512Kx8 Ruggedized Plastic Static Ram 5 1 2 m Static RAM CMOS, Monolithic Features EDI's ruggedized plastic 512Kx8 SRAM allows the user to 512Kx8 bit CMOS Static capitalize on the cost advantage of using a plastic com po­


    OCR Scan
    PDF EDI88512CA-RP 512Kx8 BB512CA-RP 6/96ECÅ EDI88512CA20MM 75B7 EDI88512CA-RP EDI88512LPA EDI88512CA17MI

    EDI88512LPA17NI

    Abstract: No abstract text available
    Text: W D EDI88512CA \ 512Kx8 Static Ram ELECTRONIC DESIGNS, INC. 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory The EDI88512CA is a 4 megabit Monolithic CMOS Static • Access Times: 17*, 2 0 ,2 5 ,3 5 , and 45ns • Data Retention Function LP version


    OCR Scan
    PDF EDI88512CA 512Kx8 EDI88512CA EDI8M8512C. 6/96ECO EDI88512LPA17NI

    Untitled

    Abstract: No abstract text available
    Text: WD\ EDI88257C 256Kx8 Static Ram ELECTRONIC DESIGNS, INC. 256Kx8 Static RAM CMOS, Module Features The EDI88257C is a 2 megabit Monolithic CMOS Static RAM. 256Kx8 bit CMOS Static The 32 pin DIP pinout adheres to the JEDEC standard for the two Random Access Memory


    OCR Scan
    PDF EDI88257C 256Kx8 EDI88257C 256Kx8 100ns EDI8M8257C. 512Kx8 EDI88512C.

    7587 GE

    Abstract: EDI88512CA17N361 EDI88512LPA20F32B EDI88512CA20N36B
    Text: W D EDI88512CA \ 512Kx8 Static Ram ELECTRONIC DESIGNS, INC. 512m Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory The EDI88512CA is a 4 megabit Monolithic CMOS Static • Access Times: 1T 2 0 ,2 5 ,3 5 , and 45ns • Data Retention Function LP version


    OCR Scan
    PDF EDI88512CA 512Kx8 EDI88512CA EDI8M8512C. EDI88128CS. 20VA/V 6/96ECO 7587 GE EDI88512CA17N361 EDI88512LPA20F32B EDI88512CA20N36B

    EM 319

    Abstract: No abstract text available
    Text: %ED l EDI88512CA-RP 512Kx8 Ruggedized Plastic Static Ram EIEO RO M C 0BM3N& M C. 512Kx8 Static RAM CMOS, Monolithic F ea tu re s EDI's ruggedized plastic 512Kx8 SRAM allows the user to 512Kx8 bit CMOS Static capitalize on the cost advantage of using a plastic compo­


    OCR Scan
    PDF 512Kx8 EDI88512CA-RP EDI88512CA17MI EDI88512CA20MI EDI88512LPA20MM EDI88512LPA25MM EM 319

    EDI88512C

    Abstract: ED188512C EDI88512C70CB EDI88512C100CB EDI88512C100LB EDI88512C70LB EDI88512C85CB EDI88512C85LB The32 ed188512
    Text: ELEC TRO NIC ^ E D D ES IG N S IN C SIE D • 3230114 0QD123Ö 550 M E L D E D I8 8 5 1 2 C I _ EI«drort c D rtg n * Inc. ■ — ■ — Four Megabit Monolithic SRAM h w y /M 512Kx8 Static RAM CMOS, Monoiithic F M ñ T []© íj


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    PDF 35301m EDI88512C 512Kx8 EDI88512C The32 ED188512LP) MIL-STD-883, EDI88S12C70NB ED188512C EDI88512C70CB EDI88512C100CB EDI88512C100LB EDI88512C70LB EDI88512C85CB EDI88512C85LB ed188512

    EDI88512LPA17MI

    Abstract: 75B7 EDI88512CA-RP EDI88512LPA
    Text: W5X EDI88512CA-RP 512Kx8 Ruggedized Plastic Static Ram ELECTRONIC DESIGNS, INC 512Kx8 Static RAM CMOS, Monolithic Features 512Kx8 bit CMOS Static Random Access Memory T, 20 and 25ns • Access Times: 1 • Data Retention Function LPA version • Extended Temperature Testing


    OCR Scan
    PDF EDI88512CA-RP 512Kx8 EDI88512CA20MM EDI88512CA25MM EDI88512LPA20MM EDI88512LPA17MI 75B7 EDI88512CA-RP EDI88512LPA